Sol-gel Spin-coating Process Research Articles

Photocatalytic activities of Fe2O3 coated ZnO nanowires grown by electrochemical anodization method

In this study, the visible light photocatalytic activities of the ZnO and ZnO/Fe2O3 structures were investigated. Anodization of Zn plates to obtain ZnO nanowires was carried out by applying 35 V between 1 and 30 min durations. Fe2O3 layers were coated on initially obtained ZnO nanowires through a sol-gel spin-coating process. All samples were examined for morphological, structural, optical, and photocatalytic activities in detail. The results showed that the conducted anodization process was successful where up to micrometer-length nanowires were obtained. SEM images confirmed the presence of Fe2O3 deposits surrounding the nanowires, while UV and visible absorption spectra indicated increased absorption due to Fe2O3, leading to enhanced photocatalytic performance. The best-performing ZnO nanowire anodized for 5 min almost doubled its photocatalytic activity after Fe2O3 coating, in which an apparent reaction rate of 12.24 × 10−3 min−1 and degrading 90.32 % of the initial MB concentration was recorded.

Optimizing the structural, optical and photovoltaic properties of Mn-doped perovskite solar cells

Perovskite solar cells (MAPbI2Br or CH3NH3I2Br) are the subject of this thorough examination of their optical, structural, and photovoltaic properties. These MAPbI2Br cells were prepared by the sol–gel spin-coating process to make films of both undoped and Mn2+-doped materials. In addition, the band gap energy (Eg) exhibited a steady downward trend as doping levels increased. The largest drop was observed at 4 % Mn2+ doping, when UV–Vis spectroscopy measured an Eg value of 1.88 eV. This decrease in band gap energy is essential to improving MAPbI2Br's functionality. Furthermore, when compared to cells that used pure MAPbI2Br perovskite solar cells, the efficiency of the manufactured MAPbI2Br cells shown a significant improvement. Analyzing the current–voltage (J-V) characteristics revealed that the MAPbI2Br produced with a 4 % Mn2+-doped MAPbI2Br film had dramatically improved properties. These cells showed an open-circuit voltage of 1.02, a fill factor of 0.74, a short-circuit current density of 8.10 mA/cm2, and an impressive power conversion efficiency of 6.14 %.

Photoelectrocatalytic Processes of TiO2 Film: The Dominating Factors for the Degradation of Methyl Orange and the Understanding of Mechanism.

Various thicknesses of TiO2 films were prepared by the sol-gel method and spin-coating process. These prepared TiO2 films exhibit thickness-dependent photoelectrochemical performance. The 1.09-μm-thickTiO2 film with 20 spin-coating layers (TiO2-20) exhibits the highest short circuit current of 0.21 mAcm-2 and open circuit voltage of 0.58 V among all samples and exhibits a low PEC reaction energy barrier and fast kinetic process. Photoelectrocatalytic (PEC) degradation of methyl orange (MO) by TiO2 films was carried out under UV light. The roles of bias, film thickness, pH value, and ion properties were systematically studied because they are the four most important factors dominating the PEC performance of TiO2 films. The optimized values of bias, film thickness, and pH are 1.0 V, 1.09 μm, and 12, respectively, which were obtained according to the data of the PEC degradation of MO. The effect of ion properties on the PEC efficiency of TiO2-20 was also analyzed by using halide as targeted ions. The "activated" halide ions significantly promoted the PEC efficiency and the order was determined as Br > Cl > F. The PEC efficiency increased with increasing Cl content, up until the optimized value of 30 × 10-3 M. Finally, a complete degradation of MO by TiO2-20 was achieved in 1.5 h, with total optimization of the four factors: 1.0 V bias, 1.09-μm-thick, pH 12, and 30 × 10-3 M Cl ion content. The roles of reactive oxygen species and electric charge of photoelectrodes were also explored based on photoelectrochemical characterizations and membrane-separated reactors. Hydrogen peroxide, superoxide radical, and hydroxyl radical were found responsible for the decolorization of MO.

Silver-modification of ZnO thin films deposited on Zn-electroplated Cu substrate by thermal shock method for the enhanced photocatalytic performance

Ag-modified ZnO thin films on Zn-electroplated Cu substrate with different Ag-contents were prepared via a simple sol–gel spin-coating procedure followed by a thermal shock method with AgNO3, and then characterized by XRD, Raman, FTIR, FESEM, EDX, and UV-visible absorption spectroscopy. Their photocatalytic performance was evaluated by the degradation of methylene blue. Due to the sol–gel spin-coating process, the film was successfully immobilized on mechanically robust Zn/Cu plates, making it promising for applications in harsh practical conditions and facilitating recovery. When our ZnO thin films were surface-modified with AgNO3 at 1 and 2 mol%, they exhibited the best photocatalytic activity under UVA light and visible light, respectively, which can be explained by the appearance of maze-like architecture on their surface with vertical ZnO walls, surface defects and metallic silver nanoparticles. However, when the Ag-content was increased to 3 mol%, the maze-like structure collapsed, leading to decreases in photocatalytic performance.

Solution processed highly transparent nitrogen-doped carbon quantum dots/ZnO hybrid thin films: A study on structural and enhanced UV emission

We deposited the highly transparent nitrogen-doped carbon quantum dots (N-CQDs) incorporated ZnO (N-CQDs/ZnO) hybrid thin films by sol–gel spin-coating process. TEM studies show a narrow size distribution of hydrothermally synthesized N-CQDs in the range of 2.5 to 3 nm. The SEM images ascertain the formation of ZnO nanoparticles upon incorporation of N-CQDs in the hybrid films. Raman studies show the hexagonal wurtzite structure of spin-coated ZnO thin film and ascertain the presence of incorporated N-CQDs adsorbed on the surface of ZnO in the hybrid films. The incorporated N-CQDs get adsorbed onto the surface of ZnO crystallites and control its size at nanoscale in the hybrid thin films. The XPS study also confirms the incorporation of nitrogen-doped CQDs and the existence of chemical interaction (chemisorption) between N-CQDs and ZnO nanoparticles, making the pathways for favorable energy transfer between N-CQDs and ZnO in the hybrid thin films. The band-edge emission (383 nm) of ZnO film increases for the increasing concentration of N-CQDs upon UV excitation (325 nm), showing the non-radiative UV energy transfer from N-CQDs to ZnO in the hybrid thin films along with the contribution of photoluminescence emission of N-CQDs in the visible region.

Hafnium Oxide Nanostructured Thin Films: Electrophoretic Deposition Process and DUV Photolithography Patterning.

In the frame of the nanoarchitectonic concept, the objective of this study was to develop simple and easy methods to ensure the preparation of polymorphic HfO2 thin film materials (<200 nm) having the best balance of patterning potential, reproducibility and stability to be used in optical, sensing or electronic fields. The nanostructured HfO2 thin films with micropatterns or continuous morphologies were synthesized by two different methods, i.e., the micropatterning of sol-gel solutions by deep ultraviolet (DUV) photolithography or the electrophoretic deposition (EPD) of HfO2 nanoparticles (HfO2-NPs). Amorphous and monoclinic HfO2 micropatterned nanostructured thin films (HfO2-DUV) were prepared by using a sol-gel solution precursor (HfO2-SG) and spin-coating process following by DUV photolithography, whereas continuous and dense monoclinic HfO2 nanostructured thin films (HfO2-EPD) were prepared by the direct EPD of HfO2-NPs. The HfO2-NPs were prepared by a hydrothermal route and studied through the changing aging temperature, pH and reaction time parameters to produce nanocrystalline particles. Subsequently, based on the colloidal stability study, suspensions of the monoclinic HfO2-NPs with morphologies near spherical, spindle- and rice-like shapes were used to prepare HfO2-EPD thin films on conductive indium-tin oxide-coated glass substrates. Morphology, composition and crystallinity of the HfO2-NPs and thin films were investigated by powder and grazing incidence X-ray diffraction, scanning electron microscopy, transmission electron microscopy and UV-visible spectrophotometry. The EPD and DUV photolithography performances were explored and, in this study, it was clearly demonstrated that these two complementary methods are suitable, simple and effective processes to prepare controllable and tunable HfO2 nanostructures as with homogeneous, dense or micropatterned structures.

Synthesis and characterization of SnO2 thin films using metalorganic precursors

Tetrakis (dimethylamino) tin(IV) (TDMASn) is a metal organic precursor used for fabricating transparent conducting tin oxide (SnO2) thin films via atomic layer deposition process (ALD). This study reported for the first time, a spin coating fabrication process of transparent conducting SnO2 thin films using TDMASn as the precursor for electrode materials of solar cells substrate. The samples were prepared using sol–gel spin-coating process and annealed at different temperatures to form metastable crystal structured SnO2 thin films. The manufactured thin films consequently underwent X-ray diffraction (XRD), scanning electron microscope (SEM), UV–vis spectroscopy, and resistivity analysis. The XRD analysis certified the films to be of polycrystalline structure, with the SEM results revealing variations in film thicknesses. The UV–vis analysis demonstrated a peak absorption band at 250 nm, while the highest transmittance of 83.2% in the visible range was noticed at the 550 °C sample.

Improved Optoelectronic Characteristics of Ga-In co-Doped ZnO UV Photodetectors by Asymmetric Metal Contact Structure

Transparent Ga and In co-doped ZnO (ZnO:Ga-In) semiconductor thin films were deposited on Corning glass substrates by the sol-gel spin-coating process. The ZnO:Ga-In thin films were used as the sensing layer of metal–semiconductor–metal (MSM)-type ultraviolet (UV) photodetectors (PDs). In this study, the optoelectronic characteristics of ZnO:Ga-In MSM PDs with symmetrical interdigital electrodes (Al–Al) and asymmetrical interdigital electrodes (Al–Au) were compared. The as-prepared ZnO:Ga-In thin films were polycrystalline, and they had a single-phase hexagonal wurtzite structure and high transparency (~88.4%) in the visible region. The MSM-PDs with asymmetric electrodes had significantly reduced dark current (9.6 × 10−5 A at 5 V) according to the current-voltage (I-V) characteristics and higher photoresponse properties than those of the MSM-PDs with symmetric electrodes, according to the current-time (I-t) characteristics. In addition, the Al–Au devices were self-powered without an applied bias voltage. The photocurrent was 6.0 × 10−5 A; the sensitivity and responsivity were 0.25 and 0.03 mA/W, respectively, under UV illumination.

Dependence of the Physical Properties of Titanium Dioxide (TiO2) Thin Films Grown by Sol-Gel (Spin-Coating) Process on Thickness

In this work, high transparent TiO2 nano-crystallinethin films have been prepared by a simple sol–gel spin coating technique. The effects of number of layers on physical properties of TiO2 thin films were studied by means X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectrophotometer, and four probes measurement. The XRD analysis confirms that TiO2 has anatase phase structure with preferred orientation of (101) direction, while the crystallite size values varied with the number of layers in the range of 16–19 nm. The films exhibit high optical transparency (>70%), reaching a maximum of 85% in the visible region with the red-shifted absorption edge, suggesting the films optical gap energy decreases with increasing number of layers from 3.67 to 3.52 eV. However, the Fourier transform infrared (FTIR) reflectance spectra show the existence of functional groups and chemical bonding. The films electrical properties measurement indicated that the substantially enhancement in the resistivity with increasing the number of layers from 3.3 × 105 to 2.15 × 106 Ω.cm. This study indicates that TiO2 films may be a potential candidate in technological applications as solar cells, photocatalysts and gas sensors due to its desired structural, optical and electrical properties.

Electrochromic Behavior of Vanadium Pentoxide Thin Films Prepared by a Sol–Gel Spin Coating Process

Herein, the synthesis of vanadium oxide thin films with high electrochromic coloration efficiency through a simple sol–gel spin coating technique is reported. The structural studies confirm the formation of V2O3V2O5 mixed phase at 250 °C and the pure β‐V2O5 phase at 350 and 450 °C. The decrease in optical bandgap, refractive index, and extinction coefficient improves the transmission ability of the films at higher temperatures. The photoluminescence emission peak observed at 553 nm is due to the recombination of electron–hole pair intrinsic transition from the lowest split‐off V 3d band to the O 2p valence band. The tuning of surface morphology from rod to platelet structure may be due to the higher annealing temperature which assists the disorder movement of the particles. The observed V 2p core levels confirm the existence of V5+ oxidation state with the splitting of 7.2 eV. The electrochromic behavior of vanadium oxide film is detected in 0.5 m LiClO4 in propylene carbonate electrolyte solution. The results show that the film annealed at 450 °C exhibits high coloration efficiency of 110.98 cm2 C−1, good reversibility of 99%, and faster switching speed for bleaching (2.1 s) and coloration (2.4 s) processes.

Structural properties of ferroelectric characteristics of mixed NiTiO3-BiFeO3 thin film by the sol-gel method

In this study, we studied the structural properties and ferroelectric characteristics of the pure BeFiO3 (BFO) and mixed NiTiO3-BiFeO3 (NTO-BFO) thin films by the sol-gel method and spin-coating process. We employed atomic force microscopy, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, X-ray diffraction, and transmission electron microscopy to analyze the surface roughness, chemical bonding, surface morphology, crystal structure, and film microstructure of both thin films. The mixed NTO-BFO film showed better electrical characteristics, such as a smaller leakage current density (9.66 × 10−5 A/cm2) and a higher remanent polarization (59.02 μC/cm2), than the pure BFO one. Moreover, the mixed film demonstrated diamagnetism behavior in the magnetic-hysteresis loop. This finding may be attributable to the NTO film deposited on the BFO film avoiding the volatilization of Bi ions and increasing the domain walls, hence giving rise to a decreased leakage current and an increased ferroelectric characteristic.

Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N

P-type ZnO transparent semiconductor thin films were prepared on glass substrates by the sol-gel spin-coating process with N doping and Ga–N co-doping. Comparative studies of the microstructural features, optical properties, and electrical characteristics of ZnO, N-doped ZnO (ZnO:N), and Ga–N co-doped ZnO (ZnO:Ga–N) thin films are reported in this paper. Each as-coated sol-gel film was preheated at 300 °C for 10 min in air and then annealed at 500 °C for 1 h in oxygen ambient. X-ray diffraction (XRD) examination confirmed that these ZnO-based thin films had a polycrystalline nature and an entirely wurtzite structure. The incorporation of N and Ga–N into ZnO thin films obviously refined the microstructures, reduced surface roughness, and enhanced the transparency in the visible range. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N and Ga–N into the ZnO:N and ZnO:Ga–N thin films, respectively. The room temperature PL spectra exhibited a prominent peak and a broad band, which corresponded to the near-band edge emission and deep-level emission. Hall measurement revealed that the ZnO semiconductor thin films were converted from n-type to p-type after incorporation of N into ZnO nanocrystals, and they had a mean hole concentration of 1.83 × 1015 cm−3 and a mean resistivity of 385.4 Ω·cm. In addition, the Ga–N co-doped ZnO thin film showed good p-type conductivity with a hole concentration approaching 4.0 × 1017 cm−3 and a low resistivity of 5.09 Ω·cm. The Ga–N co-doped thin films showed relatively stable p-type conduction (&gt;three weeks) compared with the N-doped thin films.

Sol-gel derived ITO-based bi-layer and tri-layer thin film coatings for organic solar cells applications

In this investigation, ITO-based bi-layer and tri-layer thin film coatings (~130 nm) were synthesized via a sol-gel spin-coating process and annealed at 500 °C. Thin layers of Au, Au-NPs, Ag-NPs and AgO were inserted underneath ITO films to form bi-layer thin film systems and/or encapsulated between two thin ITO layers to form tri-layer thin film systems. The effects of incorporating these layers with ITO thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV–Vis spectroscopy, four-point probes and Hall effect. XRD results confirmed the presence of a body-centred cubic structure of indium oxide for all synthesized ITO-based coatings with an average grain size ~30 nm. FESEM images of all fabricated films revealed the formation of dense surfaces with grain-like morphologies confirming the formation of a polycrystalline structure of ITO. Optical studies on the Ag-NPs and Au-NPs colloidal solutions resulted in absorption peaks featured at wavelengths 405 and 531 nm, indicating the formation of 10–14 nm and 48 nm Ag and Au nanoparticles, respectively. The highest optical transparency and band gap energy were found to be ~91.5% and 3.75 eV for (AgO)I and (I(AgO)I) thin films, respectively. The lowest electrical resistivity of 1.2 × 10−4 Ω·cm, along with the highest carrier concentration of 11.4 × 1020 cm−3 and mobility 40 cm2/V.s were obtained from the IAuI thin film. An improvement in the power conversion efficiency (PCE) from 3.8 to 4.9% was achieved in an organic solar cell by replacing the conventional pure ITO electrode with the (I(AgO)I) electrode.

Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure

Thin film of Barium–Strontium–Titanate (BaxSr1−xTiO3) has been fabricated through sol–gel spin-coating process with optimized value of ‘x’ for non-volatile memory application. The Metal–Ferroelectric–Semiconductor (MFS) thin-film structures have been prepared using Barium–Strontium–Titanate (BST) with various Barium/Strontium (Ba/Sr) molar concentrations. The BST films prepared through sol–gel process are annealed at 650 °C in nitrogen ambient. The structural and electrical characterizations have been carried out for each of the samples. From the characterization, it is realized that the BST films are having significant changes in its electrical and structural properties on changing the molar concentration of Barium and Strontium. It has been observed that the crystallinity of the film, refractive index, leakage current (I−V), capacitance vs. voltage (C−V) relation, and the charge vs. voltage (Q–V) relation vary with the varying values of ‘x’ in BaxSr1−xTiO3 and have been presented graphically. The maximum memory window up to 9 V with average leakage current within the range of 100 nA and minimum of 10 pA for 0 V has been achieved for the sweep voltage of + 15 V to -15 V. Memory window and leakage current are optimized and discussed. Endurance testing through PUND (positive up negative down) pulse shows that the samples can sustain up to 1010 iteration pulses. These findings indicate the use of optimized BST film for ferroelectric non-volatile memory applications through sol–gel process.

Temperature-dependent photoluminescence of Li-doped ZnO

The temperature-dependent photoluminescence of zinc oxide (ZnO) thin film has been investigated in the present work. ZnO films were prepared by sol-gel spin-coating process; films were doped with Li at different ratios. The prepared sample structure was studied by means of XRD analysis, the optical properties were characterized using UV–visible spectroscopy. The photoluminescence (PL) was measured at different temperature ranged from the ambient to 10 K with a step of 10 K. From XRD analysis and optical characterization, we inferred that Li introduction in ZnO network alters its crystallinity and optical bandgap. The obtained results reveal that the PL spectra are composed of a blue emission assigned to the near band emission due to the recombination of donor-bounded exciton and an intense green emission assigned to the bandgap defects. The deconvolution of the green emission reveals that the latter is composed of two peaks involving the oxygen defects interstitial Oi and vacancy Vo. No peak related to Li dopant was detected. The Li doping causes an enhancement of oxygen vacancy defect. We noticed that the NBE peak position shifts to lower energy with increasing the temperature as well as the green emission. An abrupt quenching has been observed in PL spectra due to the contribution of non-radiative recombination. A model based on the thermal generation of electron is proposed to explain the origin of peak position variation.

Nanostructured cobalt antimonate: a fast responsive and highly stable sensing material for liquefied petroleum gas detection at room temperature.

Herein, cobalt antimonate (CoSb2O6) nanospheres were fabricated via the sol–gel spin-coating process and employed as a functional liquefied petroleum gas (LPG) sensor at room temperature (25 °C). The microstructure of the fabricated CoSb2O6 thin films (thickness ∼ 250 nm) was analyzed via scanning electron microscopy, which revealed the growth of nanospheres having an average diameter of ∼45 nm. The XRD analysis demonstrated the crystalline nature of CoSb2O6 with a crystallite size of ∼27 nm. Finally, the fabricated thin films were investigated as sensors for LPG and carbon dioxide (CO2) at room temperature (25 °C) and 55% R.H. (relative humidity) with different concentrations in the range of 1000–5000 ppm. The sensing results demonstrated greater variations in the electrical properties of films for the incoming LPG than that of the CO2 gas adsorption. Furthermore, to ensure the long-term stability of fabricated sensors, they were tested periodically at 10 days interval, spanning a total duration of 60 days. In summary, our fabricated LPG sensor displayed high sensitivity (1.96), repeatability, quick response time (21 s) and high long-term stability (99%). Therefore, CoSb2O6 nanospheres can be functionalized as a potential LPG-sensitive material characterized by high sensitivity, reliability and stability at room temperature.

A facile way for fabrication of nano-sized p-NiO/n-SiC heterojunction using sol–gel technique

Abstract In this work, nanostructured nickel oxide (NSNiO) film was fabricated on 4H-SiC by using a sol–gel spin-coating process and under the optimized calcine temperature to form NSNiO/4H-SiC p-n heterojunction. The deposited film consisted of nano-sized particles with homogeneous distribution, whose diffraction peaks coincide with face-centered cubic crystalline diffraction patterns of NiO. For NSNiO film, the optical band gap was calculated as 3.75 eV, and the conductive type was analyzed to be p-type. The current density-voltage characteristic of the NSNiO/SiC p-n heterojunction showed a typical rectification behavior with a turn-on voltage of 1.16 V and a rectification ratio of about 10 3 at ± 1.5V in the dark. The results suggest that NiO/SiC structure can pave way for applying in the field of power and photoelectric devices.

High-Performance Ce0.9Sr0.1(Zr0.53Ti0.47)O4 Sensing Membrane Using a Sol-Gel Method for a Solid-State pH Sensor

In this paper, we developed a high-performance Ce0.9Sr0.1(Zr0.53Ti0.47)O4 (CSZT) sensing membrane by using a very simple sol-gel spin-coating process for a solid-state pH sensor. The structural properties of CSZT sensing membrane are correlated with its sensing characteristic. The CSZT EIS sensor exhibited a high pH sensitivity of 92.48 mV/pH, which is beyond the Nernst limit (59.4 mV/pH), and good reliability in terms of a low hysteresis voltage of 1 mV as well as a small drift rate of 0.15 mV/h. This result is attributed to the incorporation of Sr in the CSZT sensing membrane to enhance the change of Ce oxidation state from Ce4+ to Ce3+. Figure 1

Mg doping levels and annealing temperature induced structural, optical and electrical properties of highly c-axis oriented ZnO:Mg thin films and Al/ZnO:Mg/p-Si/Al heterojunction diode

In the present study, we investigated the effect of Mg doping level (0, 1, 3, 5, 7, 10, 20 and 30% Mg) and annealing temperature (TA: 773, 823, 873 and 973 K) on the structural optical and electric properties of highly c-axis oriented Mg-doped ZnO (ZMO) thin films deposited on p-Si by sol-gel spin-coating process. The ZMO thin films were analyzed by x-ray diffraction, field emission scanning electron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS), Fourier-transform infrared, ultraviolet/visible (UV/VIS) spectrophotometer. The highly c-axis oriented ZnO hexagonal structure was observed in all thin films. Crystallite size increased at higher annealing temperature (TA), whereas decreased with increasing certain Mg doping ratios except for the 5 and 7%. The FESEM analyses showed that more homogeneous distribution of nanospherical particles, increased in size at higher TA treatments, whereas their size decreased with increasing Mg doping concentrations except for the 5 and 7%. Energy dispersive spectra and XPS analyses confirmed the insertion of Mg2+ within ZnO lattice. Optical band gap value was increased by Mg doping ratio, whereas decreased at higher TA. The ZMO thin films showed a relatively high transmittance, Extinction coefficient decreased with increasing Mg doping ratio, however, increased at higher TA treatments. Refractive index was also decreased at higher Mg doping levels except for the 20% doping level. Depending on the applied voltage and Mg doping level the rectifying behaviour with high rectification ratio was observed from current-voltage (I-V) characteristics of ZMO/p-Si heterojunction diodes. Overall, our study clearly showed that the 20% Mg-doped ZnO thin films had the optimum optical and I-V characterizations.

Characterization and third harmonic generation calculations of undoped and doped spin-coated multilayered CuO thin films

The paper presents the physical characterizations of undoped and (Sn, Mn, Fe and In) doped Cupric Oxide (CuO) thin films prepared by sol-gel spin-coating process. The first aim of the work is to investigate the relation between the electrical resistivity and the third order nonlinear optical susceptibility of pure deposited CuO films, second is to explore the impact of introducing diverse dopants on the nonlinear optical responses. In this study, we demonstrate that we can control the electrical and also the nonlinear optical properties of the obtained structure using a different number of deposited layers. Moreover, the influence of doping due to variations in the microstructure and morphology is examined and discussed.