The thin crystalline silicon (c-Si) is deemed to be an alternative material for solar cells, but it is too thin to effectively absorb light on a broad spectrum. Here we experimentally demonstrate, for the first time, that a double-sided nano-hole array on free-standing thin c-Si (20 µm) by combining soft ultra-violet nanoimprint lithography (soft UV-NIL) and reactive ion etching (RIE), which is simple and possible for mass production. This thin c-Si with double-sided nano-hole array proves to show 40% lower light reflectivity than flat silicon at long wavelength range, which is coincident with the simulated results. The thin c-Si with double-sided nano-hole array also has the advantages of good flexibility and uniform thickness, adding feasibility to apply the structure to photonic devices.