Transport of nonequilibrium phonons in amorphous layers is studied. Inelastic scattering rates are calculated within the framework of the soft-potential model. It is shown that these rates can be comparable to the ones of elastic resonant scattering and are many orders of magnitude larger than those of inelastic phonon-phonon processes in crystals. The strength of the inelastic scattering is demonstrated to influence strongly the phonon signal. In particular, down-conversion effects an increase of the occupation numbers of low-frequency phonons, while up-conversion may prevent an observation of localization of high-frequency ones. Stationary phonon transport from the heat generator through the amorphous layer is shown to exhibit a strongly non-Planckian phonon signal. For the case of a strong pulse excitation of an amorphous sample the parameters of phonon transport allow the possibility of a ``hot-spot'' regime. The ``hot-spot'' evolution is shown to differ from the one in crystalline structures by the presence of slow relaxation phenomena. Some details concerning mode-conversion processes are considered. Effective inelastic surface scattering of phonons in crystalline samples, observed in experiments, is shown to be compatible with the model of a disordered near-surface layer. The theoretical results are shown to be consistent with existing experimental data.
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