Sn Doping Research Articles

Nano FeCoNi-based high-entropy alloy for microwave absorbing with high magnetic loss and corrosion resistance

With the development of modern communication and military technology, the protection of electromagnetic wave pollution and radar stealth technology have been widely concerned. In this background, the magnetic metals were widely used due to the strong ferromagnetism, which can induce strong magnetic loss to the electromagnetic wave. However, it remains challenging to precisely control the wave-absorbing performance of individual magnetic metals, and there are issues with poor corrosion resistance and high temperature resistance. Therefore, the alloy powders based on Fe, Co, and Ni in this work were prepared by wet chemical method at room temperature. Different from most of the traditional powder metallurgy methods, the wet chemical method enables us to obtain binary, ternary and quaternary alloys with a nanometer-scale and uniform distribution, all products have a microscopic morphology of 300–500 nm spheres. The FeCoNi alloy powder shows an effective absorption band (RL<-10 dB) of 7 GHz in the high frequency electromagnetic wave range at an ultrathin thickness of 1.5 mm, which has a high temperature magnetism (Tc >900 K) and excellent corrosion resistance. Further doping of Cu to form a quaternary alloy can improve the corrosion resistance and maintain the original wave-absorbing properties, while doping of Mo and Sn can adjust the position of the effective absorption bandwidth.

Comparative Toxicity of TiO2 and Sn-Doped TiO2 Nanoparticles in Zebrafish After Acute and Chronic Exposure.

This study was conducted to assess the toxicological potential of synthesized pure and Sn-doped TiO2 NPs (Sn-TiO2 NPs) in zebrafish after acute and chronic exposure. The pure TiO2 NPs, 4%, and 8% Sn-TiO2 NPs were synthesized and characterized using X-ray diffraction, Scanning Electron Microscope, diffuse reflectance spectra, dynamic light scattering, and zeta potential analyses. The pure TiO2 NPs, 4%, and 8% Sn-TiO2 NPs were spherical with average sizes of about 40, 28, and 21 nm, respectively, indicating significant size reduction of TiO2 NPs following Sn doping. According to our results, the LC50-96h increased in the order of 8% Sn-TiO2 NPs (45 mg L-1) < 4% Sn-TiO2 NPs (80.14 mg L-1) < pure TiO2 NPs (105.47 mg L-1), respectively. Exposure of fish to Sn-TiO2 NPs after 30 days resulted in more severe histopathological alterations in gills, liver, intestine, and kidneys than pure TiO2 NPs. Furthermore, Sn-doping significantly elevated malondialdehyde levels and micronuclei frequency, indicating increased oxidative stress and genotoxicity. Expression analysis revealed altered expression of various genes, including upregulation of pro-apoptotic Bax gene and downregulation of anti-apoptotic Bcl-2 gene, suggesting potential induction of apoptosis in response to Sn-doped NPs. Additionally, antioxidant genes (Gpx, Sod, Cat, and Ucp-2) and stress response gene (Hsp70) showed altered expression, suggesting complex cellular responses to mitigate the toxic effects. Overall, this study highlights the concerning impact of Sn-doping on the toxicity of TiO2 NPs in zebrafish and emphasizes the need for further research to elucidate the exact mechanisms underlying this enhanced toxicity.

Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

We investigated the atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001) using x-ray absorption near the edge structure (XANES) and hard x-ray photoelectron spectroscopy. We found that the Sn dopant had only one chemical state, which was a Sn4+ oxidation state. The bond length around the Sn dopant atom became longer due to the relaxation effect after the Sn dopant insertion. Comparison of the experimental and simulated XANES spectra showed that the octahedral Ga substitutional site in the β-Ga2O3(001) is an active Sn dopant site.

Preparation, characterization, and antibacterial activity of Ni, Sn co-doped ZnO nanoparticles: Effect of Sn doping concentration

Ni, Sn co-doped ZnO nanoparticles have been prepared by chemical method at room temperature. The effects of Sn on the structural, morphological, optical, electrical, and anti-microbial properties of the prepared nanoparticles have been evaluated and discussed. The crystallite size and the unit cell properties have been influenced by the doping concentration of Sn. The addition of Sn enhances the texture coefficient of the nanoparticles. The optical band gap of the material is blue-shifted as the doping concentration of Sn increases. The prepared nanoparticles have high hole concentration than electron concentration. The nanoparticles became more transparent at high doping concentrations. The effect of Sn concentration against E. coli, S. aureus, and P. aeruginosa has been evaluated.

Wide-range ethanol sensor based on a spray-deposited nanostructured ZnO and Sn–doped ZnO films

This study compares the performance of a highly sensitive ethanol sensor incorporating a zinc oxide (ZnO) nanostructured film with that of (1–3) % tin-doped zinc oxide (Sn–ZnO) nanostructured films across a wide range of ethanol concentrations from 0.5 to 400 ppm. X-ray diffraction analysis confirms the polycrystalline structure of Sn–ZnO films, with a significant (002) plane orientation. Notably, Sn doping reduces the optical bandgap from 3.28 eV (ZnO) to 2.41 eV (3% Sn–ZnO). Ethanol vapor sensing experiments reveal that the 2% Sn–ZnO film operates at a lower temperature of 220 °C compared to the ZnO film (290 °C). Particularly, the 2% Sn–ZnO film exhibits rapid and strong responses to low ethanol concentrations (0.5–100 ppm) at this temperature. Response values of 2.22 ± 0.01 and 17.66 ± 0.08 with response times of 11 ± 1 and 15 ± 1 s are achieved at ethanol concentrations of 0.5 and 400 ppm, respectively. Conversely, the ZnO film performs better at higher ethanol concentrations (150–400 ppm). These findings advance gas sensing mechanisms in ZnO and Sn–ZnO films, with implications for future advancements in gas sensor technology.

Unveiling structural and optical properties of Sn-doped β-Ga2O3: A correlation of experimental and theoretical observations

This work presents the experimental and theoretical insights into the structural and optical properties of tin (Sn)-doped β-Ga2O3. Sn-doped β-Ga2O3 films were fabricated using the low-pressure chemical vapor deposition (LPCVD) method onto the c-plane sapphire substrate. Further, deposited thin films were characterized for their structural and optical properties. XRD pattern depicts the crystalline nature of β-Ga2O3. The energy band gap (Eg) obtained from UV–Vis spectra has been decreased from 4.82 eV to 4.77 eV for as-deposited β-Ga2O3 to Sn-doped β-Ga2O3, respectively. However, an increase in absorbance has been observed in Sn-doped β-Ga2O3 films. Further, the first principle study based on density functional theory (DFT) has been used to comprehend the effect of Sn doping in β-Ga2O3 films. DFT result reveals the expansion of the lattice parameter of intrinsic β-Ga2O3 on the introduction of the Sn atom. Furthermore, a reduction in Eg has been observed upon Sn doping into the β-Ga2O3 structure similar to the experimental results. The reason behind the reduction in the Eg may be due to the Sn-5s energy level at the bottom of the conduction band as revealed in density of state (DOS) investigations. Also, the DOS results of Sn-doped β-Ga2O3 suggest that the atom has tended to form the ionic bond characteristics with the introduction of Sn into the β-Ga2O3, where the free electrons of the Sn-5s orbital state will fill the conduction band and may improve the conductivity. Additionally, optical properties such as reflectance and dielectric loss of function have been investigated. The reflectance and dielectric loss of function result proposed that more energy was absorbed when Sn was introduced to β-Ga2O3. Therefore, our observation suggests that upon Sn doping into β-Ga2O3, optical as well as structural properties were improved and these improved properties may be useful for optoelectronic devices.Novelty statementβ-Ga2O3 is an emerging material for optoelectronic device applications due to its excellent wide energy band gap, high critical electric field strength, high melting point, high Baliga figure of merits (BFOM), and exceptional physical and chemical stability. However, intrinsic β-Ga2O3 suffers from poor mobility and surface defects. Therefore, β-Ga2O3 needs a dopant material to enhance its' structural and optical properties. In this case, Sn doping may improve the optoelectronic properties of β-Ga2O3. Therefore, detailed theoretical and experimental investigations on Sn-doped β-Ga2O3 become necessary to understand inside phenomena. However, lots of experimental and theoretical works have been performed on Sn-doped β-Ga2O3. But, to date, there is no available report related to the correlation of theoretical and experimental data-based studies on Sn-doped β-Ga2O3. In this work, we have explored the structural and optical properties of Sn-doped β-Ga2O3 thin films deposited by the LPCVD method on the c-plane sapphire substrate. Further, the experimental results obtained were correlated with the first principal based DFT results. Our observation suggests that upon Sn doping into β-Ga2O3, optical as well as structural properties were improved and these improved properties may be useful for optoelectronic devices.

Band gap engineering and enhanced optoelectronic performance by varying dopant concentration in RbSr[formula omitted]Sn[formula omitted]Cl[formula omitted]: Ab-inito study

In the pursuit of eco-friendly solar cells, the exploration of lead-free perovskite halides has gained momentum. This study examines tin (Sn) doping effects on RbSrCl3, a lead-free perovskite, using density functional theory (DFT). Systematically varying Sn doping (25%, 50%, 75%, 100%), the research reveals consistent mechanical stability of the doped systems. Notably, an inverse relationship emerges: increased Sn dopant reduces bandgap values, enhancing visible range absorption of the hybrid perovskite materials which is crucial for solar efficiency. Extending simulations to 14 eV, optical properties like refractive index, absorption coefficient, and conductivity are explored offering a comprehensive understanding of the materials’ optical behavior. In summary, Sn-doped hybrid perovskite materials exhibit both mechanical stability and tunable optoelectronic properties, positioning them as promising candidates for solar cell technology. The study is a significant step in advancing environmentally conscious solar cell technologies for sustainable energy applications.

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe.

GeTe and Ge0.99-xIn0.01SnxTe0.94Se0.06 (x = 0, 0.01, 0.03, and 0.06) samples were prepared by vacuum synthesis combined with spark plasma sintering (SPS). The thermoelectric properties of GeTe were coordinated by multiple doping of Sn, In, and Se. In this work, a maximum zT(zT = S2σT/κ) of 0.9 and a power factor (PF = S2σ) of 3.87 μWmm-1 K-2 were obtained in a sample of Ge0.99In0.01Te0.94Se0.06 at 723K. The XRD results at room temperature show that all samples are rhombohedral phase structures. There is a peak (~27°) of the Ge element in GeTe and the sample (x = 0), but it disappears after Sn doping, indicating that Sn doping can promote the dissolution of Ge. The scattering mechanism of the doped samples was calculated by the conductivity ratio method. The results show that phonon scattering Is dominant in all samples, and alloy scattering is enhanced with the increase in the Sn doping amount. In doping can introduce resonance energy levels and increase the Seebeck coefficient, and Se doping can introduce point defects to suppress phonon transmission and reduce lattice thermal conductivity. Therefore, the thermoelectric properties of samples with x = 0 improved. Although Sn doping will promote the dissolution of Ge precipitation, the phase transition of the samples near 580 K deteriorates the thermoelectric properties. The thermoelectric properties of Sn-doped samples improved only at room temperature to ~580 K compared with pure GeTe. The synergistic effect of multi-element doping is a comprehensive reflection of the interaction between elements rather than the sum of all the effects of single-element doping.

Ca/Sn concentration-dependent enhancement of barium titanate ferroelectric performance: a dielectric and microstructural study

This work involved the synthesis of compositions of Ba0.95Ca0.05SnxTi1-xO3 (BCST) with varying amounts of Sn dopant (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1). A standard solid-state reaction approach was used to create all of the ceramic compounds. Each BCST composite’s microstructure, sintering, morphology, density, optical, and electrical characteristics were carefully examined, and the dielectric performance was optimized. In comparison to the unmodified composite, introducing varied amounts of Sn material into the BCST compound changed the crystal lattice vibrations and functional group locations. This result indicates that there are some variations in unit cell size, revealing that Sn+4 ions diffused effectively inside the lattice structure to produce BSCT composites. Further, SEM micrographs indicated proportionate changes in the homogenous structure and irregular forms as Sn concentration increased, as well as some variation in average grain size. As a consequence, by adding 0.08 mol% of Sn dopant, the crystallite size and average grain size were adjusted to 45.69 nm and 0.66 µm, respectively. Meanwhile, the 0.08-Sn specimen displayed a dielectric constant (Ɛ) with an optimum value of 5557 and a relative decrease in the Curie-Weiss constant. These results are attributed to the existence of various concentrations of Sn ions at the Ti-site of the BCT, which resulted in a compositionally disordered state. This disordered condition is essential for the production of dielectric compounds. Therefore, it is evident that modifying the amount of Sn doping added significantly enhanced the dielectric characteristics of the BCST composites created in this work. However, excessive Sn doping reduces the dielectric properties due to a reduction in tetragonal phase and an increase of disorders and charge fluctuations.Graphical

Investigation of sensing properties of Sn-doped NiO thin films for the detection of ammonia gas

In this study, we detail the fabrication of Sn-doped nickel oxide thin films using the spin-coating technique, elucidating the impact of Sn doping on structural, optical, and gas sensing properties. Systematic analysis via XRD, SEM, AFM, and UV–Visible spectroscopy delves into the structural and optical characteristics of the films. Notably, gas sensing capabilities, specifically towards NH3, are investigated. XRD analysis reveals the polycrystalline nature of NiO thin films, with crystallinity diminishing as Sn concentration increases. SEM and AFM analyses highlight a uniform film surface with spherical-shaped particles, and increased surface roughness with higher Sn content, a crucial factor for gas sensing applications. Raman analysis showcases first-order phonon modes of vibrations of Ni-O, while optical studies affirm the films' transparency in the visible wavelength. Notably, in ammonia gas sensing tests at room temperature, the 8 mol% Sn-doped NiO thin film exhibits an exceptional response of 3200 %, with a rapid 40-second response time and a 25-second recovery time at a 150 ppm concentration of ammonia gas. These findings suggest that Sn-doped NiO thin films hold promise as effective gas sensors for NH3 detection.

Sn Bulk Phase Doping and Surface Modification on Ti4 O7 for Oxygen Reduction to Hydrogen Peroxide.

Developing stable and highly selective two-electron oxygen reduction reaction (2e- ORR) electrocatalysts for producing hydrogen peroxide (H2 O2 ) is considered a major challenge to replace the anthraquinone process and achieve a sustainable green economy. Here, we doped Sn into Ti4 O7 (D-Sn-Ti4 O7 ) by simple polymerization post-calcination method as a high-efficiency 2e- ORR electrocatalyst. In addition, we also applied plain calcination after the grinding method to load Sn on Ti4 O7 (L-Sn-Ti4 O7 ) as a comparison. However, the performance of L-Sn-Ti4 O7 is far inferior to that of the D-Sn-Ti4 O7 . D-Sn-Ti4 O7 exhibits a starting potential of 0.769 V (versus the reversible hydrogen electrode, RHE) and a high H2 O2 selectivity of 95.7 %. Excitingly, the catalyst can maintain a stable current density of 2.43 mA ⋅ cm-2 for 3600 s in our self-made H-type cell, and the cumulative H2 O2 production reaches 359.2 mg ⋅ L-1 within 50,000 s at 0.3 V. The performance of D-Sn-Ti4 O7 is better than that of the non-noble metal 2e- ORR catalysts reported so far. The doping of Sn not only improves the conductivity but also leads to the lattice distortion of Ti4 O7 , further forming more oxygen vacancies and Ti3+ , which greatly improves its 2e- ORR performance compared with the original Ti4 O7 . In contrast, since the Sn on the surface of L-Sn-Ti4 O7 displays a synergistic effect with Tin+ (3≤n≤4) of Ti4 O7 , the active center Tin+ dissociates the O=O bond, making it more inclined to 4e- ORR.

Impact of Sn-doping on the optoelectronic properties of zinc oxide crystal: DFT approach.

This study aims to provide a concise overview of the behavior exhibited by Sn-doped ZnO crystals using a computational technique known as density functional theory (DFT). The influence of Sn doping on the electronic, structural, and optical properties of ZnO have been explored. Specifically, the wavelength dependent refractive index, extinction coefficient, reflectance, and absorption coefficient, along with electronic band gap structure of the Sn doped ZnO has been examined and analyzed. In addition, X-ray diffraction (XRD) patterns have been obtained to investigate the structural characteristics of Sn-doped ZnO crystals with varying concentrations of Sn dopant atoms. The incorporation of tin (Sn) into zinc oxide (ZnO) has been observed to significantly impact the opto-electronic properties of the material. This effect can be attributed to the improved electronic band structure and optical characteristics resulting from the tin doping. Furthermore, the controllable structural and optical characteristics of tin-doped zinc oxide will facilitate the development of various light-sensitive devices. Moreover, the impact of Sn doping on the optoelectronic properties of ZnO is thoroughly investigated and documented.

Study of rectifying properties and true Ohmic contact on Sn doped V2O5 thin films deposited by spray pyrolysis method

In this paper, V2O5 thin-films were deposited on glass substrates by using the ultrasonically nebulized spray pyrolysis technique. Doping concentration of 1 %, 2 %, and 7 % of Sn, in V2O5 thin-films is studied by using metal–semiconductor-metal (MSM) based device structure. X-ray diffractometer (XRD) and field emission scanning electron microscope (FESEM) were used to analyze the surface morphology of the thin films. The XRD spectroscopic analysis shows the crystal size of above-mentioned samples, to be respectively 39 nm, 58 nm, 60 nm and 72 nm. The FESEM images showed the enhancement of crystal size with increase in Sn doping concentration. The optical properties of Sn doping on V2O5 thin film were studied by using UV–Vis spectrometer. The UV–Vis spectroscopic analysis shows that the absorption coefficient values decrease with increase in concentration of Sn metal doping in V2O5 thin film. The activation energies of all thin-film samples were calculated from Arrhenius plots and were found to be 0.938 eV, 1.101 eV, 1.11 eV and 1.169 eV, respectively, for all the thin-film samples mentioned above. The MSM based structure was fabricated by using a shadow mask and thermal evaporation. Later, the I-V characteristics of all the thin films were obtained by using semiconductor parameter analyzed at a biased voltage between −50 V and + 50 V with a step size of 1 V. Rectification ratio of the V2O5 films is significantly enhanced as the doping concentration increases. It was found that the rectification ratio of undoped V2O5 thin films increased linearly from 1.018 to 1.059 with an increase in temperature from room temperature to 130 °C. Similar trend was followed for 1 % (from 1.079 to 1.198), 2 % (from 1.081 to 1.224) and 7 % (from 1.095 to 1.311) Sn doped films. These results show the potential application of V2O5 thin films in the field of optoelectronics and thin film gas sensors.

Enhancing effect of Cu and Sn doping on low-temperature catalytic activity and operating temperature window of γ-Fe2O3 in NH3-SCR of NOx

The effect of Cu/Sn doping on the catalytic performance of γ-Fe2O3 was investigated and its reaction process was explored.

The Effect of Al and Sn Doping on the Optical and Electrical Properties of ZnO Nanostructures

The Effect of Al and Sn Doping on the Optical and Electrical Properties of ZnO Nanostructures

N/p-Doping in a buckled honeycomb InAs monolayer using IVA-group impurities.

In this work, the effects of n/p-doping on the electronic and magnetic properties of a low-buckled honeycomb InAs monolayer are investigated using first-principles calculations. Herein, IVA-group atoms (C, Si, Ge, Sn, and Pb) are selected as impurities for n-doping in the In sublattice and p-doping in the As sublattice. The pristine monolayer is a semiconductor with a band gap of 0.77(1.41) as determined using the PBE(HSE06) functional. A single In vacancy induces magnetic semiconductor behavior with a large total magnetic moment of 2.98 μB, while a single As vacancy preserves the non-magnetic nature. The monolayer is not magnetized by n-doping with C and Si atoms due to the strong ionic interactions, while the magnetic semiconducting nature is induced with Ge, Sn, and Pb impurities. In these cases, magnetic properties are produced by IVA-group impurities and their neighboring As atoms. Furthermore, either a magnetic semiconducting or half-metallic nature is obtained via p-doping, whereas magnetism originates mainly from C, Si, Ge, and Sn dopants, and the As atoms closest to a Pb dopant. Further investigation indicates that the magnetization becomes stronger upon increasing the doping level, with a total magnetic moment of up to 3.92 μB with 25% Sn impurity. In addition, the thermal stability of the doped systems at room temperature is also confirmed by ab initio molecular-dynamics (AIMD) simulations. The results introduce IVA-group-assisted functionalization as an efficient way to make prospective 2D InAs-based spintronic materials.

Thermoelectric properties of low-temperature-grown polycrystalline InAs1−xSbx films

The development of thin-film thermoelectric generators for micro-energy harvesting is highly anticipated. In this study, we have investigated the synthesis and thermoelectric applications of ternary alloy InAs1−xSbx thin films, which are narrow-gap III–V compound semiconductors. Polycrystalline InAs1−xSbx thin films with sub-micrometer grain size were synthesized on glass using molecular-beam deposition at 400 °C with all composition x. The InAs1−xSbx thin films exhibited n-type conduction, and their electrical and thermoelectric properties were strongly dependent on x and the amount of Sn doping. The ternary alloying reduced the power factor and contributed to a reduction in thermal conductivity. The InAs0.2Sb0.8 thin film on a glass substrate exhibited a power factor of 100 μW m−1 K−2 and a thermal conductivity of 2.0 W m−1 K−1 at room temperature. Furthermore, a comparable performance was demonstrated for an InAs0.2Sb0.8 thin film grown on a plastic film. These achievements will pave the way for the application of III–V compound semiconductors in flexible thermoelectric generators.

Effect of doping on the morphology and dimethylamine gas sensing properties of hexagonal pine needle-like WO3 structures with highly exposed (100) facet

Novel hexagonal pine needle-like Sn-WO3 structures were synthesized using the hydrothermal method. The present study aimed to evaluate the impact of Sn/W ratios and the introduction of several metal elements (Fe, Zn, Cu, and In) on both the morphology and gas-sensing properties of WO3. The hexagonal pine needle-like 1 % Sn-WO3 sensor had a significantly elevated response of 89 and a faster response/recovery time of 11/15 s when exposed to 10 ppm dimethylamine (DMA) at the optimal operating temperature of 180 °C. This sensor displayed notable characteristics such as excellent selectivity, repeatability, long-term stability, and a detection limit of 25 ppb. The excellent sensing performances of this sensor can be attributed to their highly (100) facet, Sn doping and distinctive hexagonal pine needle-like morphology.

3D Fast Sodium Transport Network of MoS2 Endowed by Coupling of Sulfur Vacancies and Sn Doping for Outstanding Sodium Storage.

A sulfur vacancy-rich, Sn-doped as well as carbon-coated MoS2 composite (Vs-SMS@C) is rationally synthesized via a simple hydrothermal method combined with ball-milling reduction, which enhances the sodium storage performance. Benefiting from the 3D fast Na+ transport network composed of the defective carbon coating, Mo─S─C bonds, enlarged interlayer spacing, S-vacancies, and lattice distortion in the composite, the Na+ storage kinetics is significantly accelerated. As expected, Vs-SMS@C releases an ultrahigh reversible capacity of 1089 mAh g-1 at 0.1 A g-1, higher than the theoretical capacity. It delivers a satisfactory capacity of 463 mAh g-1 at a high current density of 10 A g-1, which is the state-of-the-art rate capability compared to other MoS2 based sodium ion battery anodes to the knowledge. Moreover, a super long-term cycle stability is achieved by Vs-SMS@C, which keeps 91.6% of the initial capacity after 3000 cycles under the current density of 5 A g-1 in the voltage of 0.3-3.0V. The sodium storage mechanism of Vs-SMS@C is investigated by employing electrochemical methods and ex situ techniques. The synergistic effect between S-vacancies and doped-Sn is evidenced by DFT calculations. This work opens new ideas for seeking excellent metal sulfide anodes.

Realization High-Voltage Stabilization of O3-Type Layered Oxide Cathodes for Sodium-Ion Batteries by Sn Simultaneously Dual Modification

The total global production of lithium-ion batteries (LIBs) used in electric vehicles and stationary energy storage devices has increased sharply to reach the targeted Net Zero by 2050. This leads to concerns about the future and long-term availability and cost of critical raw materials (cobalt, nickel, lithium and copper) employed in LIBs. Therefore, alternative new-generation batteries with comparable performance but using less critical raw materials are needed.Sodium-ion Batteries (NIBs) offer a wealth of possibilities for inexpensive and sustainable energy storage devices. To maximize their potential, new cathode materials with high energy densities and stable structures are required. Cobalt-free sodium transition metal oxides of O3 type are a predominant cathode for NIBs due to their appreciable specific capacity, reduction in the use of critical elements, and the potential to rival LiFePO4 in terms of energy density. However, rapid capacity fading caused by serious structural and interfacial degradation hamper this process.Herein, we provide a novel Sn-modified O3-type NaNi1/3Fe1/3Mn1/3O2 cathode with improved high-voltage stability by bulk Sn doping and surface coating simultaneously. The bulk substitution of Sn4+ stabilizes the crystal structure by alleviating the irreversible high voltage phase transition and lattice structure degradation. In the meantime, the spontaneously formed tin rich surface layer effectively inhibits surface parasitic reactions and improves interfacial stability during cycling. As a result, the Sn-modified NaNi1/3Fe1/3Mn1/3O2 cathode exhibited excellent cycling performance by an almost doubled capacity retention increase after 200 cycles within 2.0-4.1V. The influence of Sn modification on the crystal structure and electrochemical properties has been investigated for the first time, and the mechanism was studied through an extensive analysis by in situ XRD, HRTEM, FIB-SEM, XPS and Mössbauer spectroscopy.This work offers an industrially feasible strategy to simultaneously stabilize the bulk structure and interface for O3-type layered cathodes for SIBs and raises the possibility of similar effective strategies to be employed for other energy storage materials Figure 1