Sn Doping Research Articles

Nonequilibrium Layered PbS Stabilized by Sn Doping: Bipolar Semiconductors with Low Thermal Conductivity

Nonequilibrium Layered PbS Stabilized by Sn Doping: Bipolar Semiconductors with Low Thermal Conductivity

Spraying-Deposited Transparent p-Type Sn-Doped CuI Film and Its Ultrahigh-Speed Self-Powered Photodetector.

The exploitation of simply processed p-type semiconductors and photodetectors with promising optoelectrical properties remains challenging yet essential for current and future advanced optoelectronic applications. Transparent p-type CuI and Sn-doped CuI (Cu-Sn-I) films and their self-powered photodetectors have been successfully fabricated by the spraying method. It is found that the incorporation of Sn dopants enhances the optical, electrical, and photoelectric properties of CuI thin films as well as their corresponding self-powered heterojunction photodetectors. This improvement of the optoelectrical properties of the Cu-Sn-I film and its photodetector can be attributed to the adjustment of the acceptor defect level and increased hole concentration resulting from Sn doping. The Cu-Sn-I/n-Si photodetector exhibits a responsivity of 10.7 mA/W, a detectivity of 6.79 × 1011 Jones, and a response time of 77 μs/30 μs (0 V bias). The response time exhibits the fastest rise and decay times compared with the other CuI-based self-powered UV photodetectors in recent years, showcasing promising applications in the realm of transparent electronics moving forward. This study also presents an effective strategy for enhancing the electrical properties of p-type semiconductors and devices through effective doping.

Effects of Sn addition in W-doped Ag paste against electrochemical corrosion and sulfurization

Purpose This study aims to address these challenges by enhancing the resistance of Ag-based pastes to corrosion and sulfurization, thereby improving their performance and weatherability in high-power and high-frequency electronic applications. Design/methodology/approach This study investigates the influence of Sn doping in W-doped Ag paste to enhance resistance against electrochemical corrosion and sulfurization. A systematic examination was conducted using transient liquid phase sintering and solid–liquid inter-diffusion techniques to understand the microstructural and electrochemical properties. Findings This study found that Sn addition in W-doped Ag paste significantly improves its resistance to electrochemical corrosion and sulfurization. The sintering process at 600°C led to the formation of an Ag2WO4 phase at the grain boundaries, which, along with the presence of Sn, effectively inhibited the growth of Ag2WO4 grains. The 0.5% Sn-doped samples exhibited optimal anti-corrosion properties, demonstrating a longer grain boundary length and a passivation effect that significantly reduced the corrosion rate. No Ag2S phase was detected in the weatherability tests, confirming the enhanced durability of the doped samples. Originality/value The findings of this study highlight the potential of Sn-doped Ag-W composites as a promising material for electronic components, particularly in environments prone to sulfurization and corrosion. By improving the anti-corrosion properties and reducing the grain size, this study offers a new approach to extending the lifespan and reliability of electronic devices, making a significant contribution to the development of advanced materials for high-power and high-frequency applications.

Triboelectric Nanogenerator Based on Tin Doped Zinc Oxide and Polyvinyl Alcohol Composite Thin Film for Energy Harvesting Applications

The triboelectric nanogenerator (TENG) collects mechanical energy from its surroundings and converts it to electrical signals that can be used in sustainable energy harvesting technologies to help maintain the social ecosystem. However, TENG operation with pure triboelectric material may not be sufficient to power a small electronic system without modification. The optimal material capable of producing significant electrical energy with flexible structures remains a major barrier to practical application. In this study, tin-doped zinc oxide (Sn:ZnO) and polyvinyl alcohol (PVA) composite thin films were prepared using a simple solution immersion technique at various Sn atomic percentage (at.%) concentrations for use in TENG devices. The crystalline quality of a composite thin film made of Sn:ZnO and PVA was identified using x-ray diffraction. The microstructure changes of the composite thin film were found to be influenced by Sn doping, as studied using optical microscopy. The TENG with 2.5 at.% Sn:ZnO/PVA composite thin film and Kapton film achieved the highest peak voltage of 8.5 V in open circuit and 90 µW output power at 1 MΩ. The produced electrical output was then used to store energy in capacitors. According to its TENG properties, the Sn:ZnO/PVA composite thin film-based TENG has the potential to be used in low power electronic devices.

Highly sensitive and room-temperature operable carbon dioxide gas sensor based on spin-coated Sn-doped Co3O4 thin films with advanced recovery properties

The urgency to address climate change has highlighted the need for gas sensors capable of monitoring air quality at room temperature (RT) and accurately measuring the concentrations of carbon oxides (CO2 and CO) in the environment. This study details the development of a highly sensitive CO2 gas sensor using spin-coated Sn-doped Co3O4 thin films, operating at a room temperature of 30⁰C and a relative humidity (RH%) of 43 %. Extensive characterization employing XRD, SEM, EDX, FTIR, and UV–Vis optical techniques verified the impact of Sn doping on the surface morphology, phase purity, and a notable reduction in the dual-band gap of the thin films. Gas sensing measurements were conducted at RT using varying CO2 gas concentrations. A sensor response of 796.81 % was obtained for the optimally sensitive film, 10 % Sn-doped Co3O4, at a CO2 concentration of 9990 ppm. Additionally, a range of RH % levels was examined at a constant CO2 gas concentration of 9990 ppm, revealing an optimal humidity level of 43 % at RT. Further analysis revealed that the 10 % Sn-Co3O4 sensor displayed enhanced sensitivity to CO2, surpassing its response to N2, H2, and NH3 gases. The determined limits of detection and quantification underscore the sensor's precision and reliability in quantifying CO2 gas concentrations. Our findings demonstrate the excellent potential of Sn-doped Co₃O₄ thin films as highly sensitive CO₂ gas sensors. These films provide a promising solution for detecting elevated CO₂ levels at room temperature, aiding climate change mitigation efforts.

Development of Cost-Effective Sn-Free Al-Bi-Fe Alloys for Efficient Onboard Hydrogen Production through Al–Water Reaction

Leveraging the liquid-phase immiscibility effect and phase diagram calculations, a sequence of alloy powders with varying Fe content was designed and fabricated utilizing the gas atomization method. Microstructural characterizations, employing SEM, EDS, and XRD analyses, revealed the successful formation of an incomplete shell on the surfaces of Al-Bi-Fe powders, obviating the need for Sn doping. This study systematically investigated the microstructure, hydrolysis performance, and hydrolysis process of these alloys in deionized water. Notably, Al-10Bi-7Fe exhibited the highest hydrogen production, reaching 961.0 NmL/g, while Al-10Bi-10Fe demonstrated the peak conversion rate at 92.99%. The hydrolysis activation energy of each Al-Bi-Fe alloy powder was calculated using the Arrhenius equation, indicating that a reduction in activation energy was achieved through Fe doping.

Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy

Results of a thermodynamic study of Sn doping and fabrication of a Sn-doped GaN freestanding layer with high structural quality by halide vapor phase epitaxy (HVPE) are described in this paper. Thermodynamic analysis revealed that SnCl2 and/or SnCl act as Sn precursors through the reaction between Sn metal and HCl gas. The equilibrium partial pressures of SnCl2 and SnCl increase with the input HCl partial pressure. To generate Sn precursors effectively, it is desirable that the reaction between Sn metal and HCl gas occurs in the inert gas ambient. On the basis of results of the thermodynamic study, the Sn-doped GaN freestanding layer with a Sn concentration of 5.7 × 1019 cm−3 is fabricated by removing the GaN seed substrate after HVPE growth. The Sn-doped GaN freestanding layer has high crystal quality, and the lattice constants along the c- and a-axes of the Sn-doped GaN freestanding layer are larger than those of the GaN seed substrate because of the high electron density and the size effect of Sn atoms.

Synergistic Effect of Sn Doping in TiO2 Nanoparticles as an Additive in Anti‐Corrosion Coatings

ABSTRACTCorrosion is a major problem and protective coatings offer an effective solution. However, organic coatings are often associated with microcracks caused by the evaporation of solvents during coating preparation. This study investigates the use of titanium dioxide (TiO2) nanoparticles as a coating additive to protect mild steel surfaces. Additionally, doping TiO2 with tin (Sn) is believed to enhance its properties due to the reduced size of the nanoparticles. These nanoparticles were synthesised using the sol–gel method and subjected to various analyses. The coated mild steel samples were prepared using the dip‐coating method and immersed in 3.5 wt.% sodium chloride (NaCl) solution for 30 days. Electrochemical impedance spectroscopy (EIS) and Tafel polarisation showed that the Sn‐doped TiO2 nanoparticles as an additive improved the corrosion resistance, as evidenced by a positive shift in corrosion potential (Ecorr) and reduced corrosion current density (Icorr).

Effect of Zn, Ti and Sn dopants on the structural, morphological and optical properties of MgO nanoparticles synthesized via green combustion using Persicaria odorata leaves extract

Effect of Zn, Ti and Sn dopants on the structural, morphological and optical properties of MgO nanoparticles synthesized via green combustion using Persicaria odorata leaves extract

Thermoelectric Characteristics of Permingeatite Compounds Double-Doped with Sn and S.

Sn/S double-doped permingeatites, Cu3Sb1-xSnxSe4-ySy (0.02 ≤ x ≤ 0.08 and 0.25 ≤ y ≤ 0.50) were synthesized, and crystallographic parameters and thermoelectric characteristics were examined as a function of doping level. The lattice parameters of permingeatite were significantly modified by the dual doping of Sn and S, with S doping exerting a greater influence on lattice constants and variations in tetragonality compared to Sn doping. With an increase in the level of Sn doping and a decrease in S doping, the carrier concentration increased, leading to enhanced electrical conductivity, indicative of a degenerate semiconducting state. Conversely, an increase in S doping and a decrease in Sn doping led to a rise in the Seebeck coefficient, demonstrating p-type conductivity characteristics with positive temperature dependence. Additionally, the double doping of Sn and S substantially improved the power factor, with Cu3Sb0.98Sn0.02Se3.75S0.25 exhibiting 1.12 mWm-1K-2 at 623 K, approximately 2.3 times higher than that of undoped permingeatite. The lattice thermal conductivity decreased with increasing temperature, while the electronic thermal conductivity exhibited minimal temperature dependence. Ultimately, the dimensionless figure of merit (ZT) was improved through the double doping of Sn and S, with Cu3Sb0.98Sn0.02Se3.50S0.50 recording a ZT of 0.68 at 623 K, approximately 1.7 times higher than that of pure permingeatite.

Sn and Cu influence on Mg:Si ratios evolution in clusters based on DFT and its impact on precipitation hardening of pre-aged Al-1.0Mg-0.6Si alloys

Using atom probe tomography (APT), transmission electron microscopy (TEM), and hardness tests, the effect of Sn and Cu on the evolution of Mg:Si ratios in clusters and subsequent precipitation hardening behavior of pre-aged Al-1.0Mg-0.6Si alloys are investigated, and the underlying mechanism is revealed by density functional theory (DFT) calculation of interaction energy. It is shown that, the doping of Sn and/or Cu increases the average Mg:Si ratio in clusters. This increase is attributed to the strong interaction of Sn/Cu with Mg solutes, which enhances the binding of Mg to Si-rich clusters and results in a higher proportion of clusters with Mg:Si ratios near 1 (0.75 ∼ 1.25). Consequently, the enhanced precipitation of β" precipitates during artificial aging is observed in Sn and/or Cu doped alloys, due to the ease of clusters with Mg:Si ratios near 1 transform into β" precipitates, leading to an improved hardening response. Notably, the combined doping of Sn and Cu exhibits the strongest aggregation tendency towards Mg solutes, yielding the most pronounced strengthening effects on precipitation and hardening response during artificial aging. Furthermore, a schematic model detailing the evolution of Mg:Si ratios in clusters is proposed, based on the APT results and DFT calculation of interaction energy.

Tin-based dual-modification enabling enhanced air stability and electrochemical performance for Li5.5PS4.5Cl1.5 in all-solid-state lithium metal batteries

As one of sulfide electrolytes, chlorine-rich lithium argyrodites (Li5.5PS4.5Cl1.5) have significant advantages as solid state electrolytes (SSEs) in all-solid-state batteries (ASSBs) due to their ultra-high conductivity. However, their practical application is limited by poor air stability and weak compatibility with Li metals. Herein, we enhance the performance of Li5.5PS4.5Cl1.5 by doping it with SnO2, resulting in the formation of the Li5.58P0.92Sn0.08S4.34O0.16Cl1.5 electrolyte. The introduction of Sn and O dopants forms strong Sn-S and P-O bonds in the electrolyte, replacing the sensitive P-S bonds and suppressing H2S release. Additionally, this doped electrolyte demonstrates an impressive Li-ion conductivity of 5.71 mS cm−1, a high critical current density of 2.9 mA cm−2, and significantly improved air and moisture stability. Moreover, the Sn dopant produces a Li-Sn alloy layer on the bare Li metal anode, endowing the ASSB with an initial discharge capacity of 146.7mAh/g at 0.2C and a capacity retention of 86.2 % after 200 cycles at 0.5C. Combining with a 10 wt% SnF2-treated Li metal anode to further strengthen the electrode interfacial stability by the in-situ formed Li-Sn and LiF derivatives, the resultant full cell delivers a promoted initial discharge capacity of 179.5mAh/g at 0.2C and a high discharge capacity of 112.2mAh/g after 300 cycles at 0.5C. The dual strategy of electrolyte doping and Li anode modification achieves a synergistic effect that enables the ASSB to exhibit superior electrochemical performance, providing an effective way of preparing stable sulfide-based SSEs for large-scale applications.

Photo Electrocatalytic Water Splitting Using Sn Doped In2S3 Homologous Series Synthesized in Oxygen Deficient Flame

AbstractThe innovative development of reactive‐spray systems for gas‐phase production of metal sulfides are potential materials for next‐generation technologies. These flame‐synthesized sulfides (doped, functionalized, and heterogeneously mixed derivatives) hold significant potential as photocatalysts for water splitting. The knowledge acquired from nonaqueous precursor‐solvent and high‐temperature aerosol chemistries, optimal process parameters are established to generate In2‐(4/3)xSnxS3, solid‐solutions. The thermally driven reducing gas‐phase reactions are controlled through fuel/oxygen ratio. Particles characterizations (X‐ray diffraction, transmission electron microscopy (TEM) and imaging) revealed structural stability and crystallinity. The In2‐(4/3)xSnxS3, at higher Sn doping had enhanced photoexcitation. Donor‐acceptor levels within the material facilitated electron‐hole pair trapping, crucial for redox reactions. With suitable band gap energies for water oxidation (1.91.1 eV) closely matched flat band potentials (4.384.67 eV) for redox reactions. The powder characterization showed 8% In2O3 in InSn0.75S3 after photocatalysis due to S‐degradation in the initial light “on/off cycles”. The pioneering process of employing oxygen‐deficient reducing flame enabled a series of photo‐catalytically active metal sulfide nanoparticles with work function energies in the range of 5.195.37 eV. This synthesis strategy holds the potential for impactful advancements in both industry and R&D, addressing the urgent need for new materials capable of inducing water oxidation under visible light.

Titanium Silicate‐1 Coupled with Sn and Er as Effective Catalysts for the Production of Lactic Acid from Saccharides

AbstractBiomass‐based saccharide valorization to produce lactic acid (LaA) via chemocatalysis has emerged as a promising approach to meet the substantial demand of the global LaA market, whereas the manufacture of prominent heterogeneous catalyst is still challenging. Herein, we fabricate a series of heterogeneous rare earth catalysts and indicate that Er supported onto titanium silicate‐1 (TS‐1) exhibits better activity than other rare earth catalysts for glucose transformation towards LaA. Remarkably, coupling Sn with Er onto TS‐1 enabled the sharp increment of LaA yield, and 3Sn15Er/TS‐1 catalyst outperformed other heterogeneous rare earth catalysts as reported to date, giving as high as 82.2% and 76.2% yields of LaA from sorbose and glucose, respectively. The catalyst characterization demonstrated the coexistence of Er2O3 and Sn2Er2O7 on 3Sn15Er/TS‐1 catalyst, both of which contributed to LaA production. Sn doping favored the formation of active particles in smaller size and increased the Lewis acidic sites when compared to single 15Er/TS‐1, thereby promoting the isomerization and retro‐aldol reaction of glucose to C3 intermediates. 3Sn15Er/TS‐1 catalyst also showed universal activity for diverse biomass‐based saccharides. This work might give useful insights to explore heterogeneous rare earth catalysts with superior activity in biomass valorization.

Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films

In this work, we report the transport, defect state and electronic structure properties of unintentionally doped (UID) and Sn doped β-Ga2O3 homo-epitaxial thin films grown by molecular beam epitaxy (MBE) with electron density ranging from 2.1 × 1016 to 2.8 × 1019 cm−3. The UID film with an electron density of 2.1 × 1016 cm−3 exhibits a notable RT mobility of 129 cm2/Vs and a peak mobility of 900 cm2/Vs at 80 K, achieving the state-of-the-art level for MBE-grown Ga2O3 films. Temperature dependent Hall measurement reveal that Sn dopants have an activation energy of 56.7 meV. Synchrotron-based photoemission spectroscopy were further used to study insights into the evolution of electronic properties induced by Sn doping. An in-gap defect state was observed at the 1.5 eV above the valence band maximum for the Sn-doped Ga2O3 film. The in-gap state acts as self-compensating centers affecting the overall doping efficiency and mobility. Furthermore, photoemission spectroscopic study also reveals an upward surface band bending existing at the surface region of Sn doped Ga2O3 films. The identification of the in-gap state and surface upward band bending have significant implications for understanding the doping mechanisms in Ga2O3 and its electronic device applications.

A comparative study of optical property on unintentionally doped and Sn-Doped β-Ga2O3 crystals by EFG method with a cylindrical Ir die

In this work, we carried out a comparative study of optical property on unintentionally doped and Sn-doped β-Ga2O3 crystals by edge-defined film-fed growth (EFG) method with a cylindrical iridium (Ir) die. The non-polarized Raman spectra showed the anisotropy in Raman peak position and intensity for three different planes (i.e., (100), (010) and (001)) of β-Ga2O3 crystals, independent of the Sn dopant. A difference in the Raman spectra between the unintentionally doped and Sn-doped β-Ga2O3 crystals was observed in the (001) plane. The strong in-plane anisotropy of the monoclinic β-Ga2O3 crystal related to the crystallographic orientation was demonstrated by the angle-resolved polarized Raman spectroscopy. The Sn dopant cannot change the optical transmittance and bandgap values of the unintentionally doped and Sn-doped β-Ga2O3 crystals with the (100), (010) and (001) orientations. However, the Sn-doped β-Ga2O3 crystal with the (010) orientation showed the higher valence band maximum and lower surface barrier height values. The X-ray photoelectron spectroscopy of the unintentionally doped and Sn-doped β-Ga2O3 crystals with the (010) orientation was also measured, which showed no obvious difference. The different luminescence centers and level of electron ionization of the unintentionally doped and Sn-doped β-Ga2O3 crystals were observed by the cathodoluminescence spectroscopy and electron paramagnetic resonance, respectively. Based on the comprehensive comparison, it can be concluded that the anisotropy in optical property of the unintentionally doped and Sn-doped β-Ga2O3 crystals with (100), (010) and (001) orientations apparently exist.

Ultraviolet-Visible-Near-Infrared Broadband Photodetector Enabled by Cs2AgBiBr6: Sn/Conjugated Polymer Heterojunction.

Broadband photodetectors covering ultraviolet (UV) to near-infrared (NIR) wavelengths play an essential role in communications, imaging, and biosensing. Developing a single photodetector with a broadband optical response operating at room temperature can significantly reduce the complexity and cost of receiver systems for multispectral applications. In this work, utilizing the porous structure characteristics of Cs2AgBiBr6:Sn thin films, a self-powered detector with broad spectral response (UV-vis-NIR) was achieved by constructing an effective Cs2AgBiBr6:Sn/PDPP3T heterojunction. This photodetector possesses a broad response spectrum from 350 to 950 nm with an average detection rate exceeding 1011 Jones and maintains excellent photoelectric performance over two months. Sn2+ doping effectively reduces the bandgap of Cs2AgBiBr6, enhancing its near-infrared absorption and optimizing energy level alignment with conjugated polymer (diketopyrrolopyrrole-terthiophene, PDPP3T). More importantly, the porous structure derived from Sn doping significantly improves carrier extraction and transport under a near-infrared light response at the heterojunction interface. Utilizing its broad spectral response characteristics in the UV-vis-NIR range, a novel information transfer and encryption system employing full optical modulation has been realized within a single perovskite photodetector. This work provides a new approach to fabricating lead-free double perovskite broadband photodetectors with potential applications in photonic devices.

Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped β-Ga2O3 (-201) Single Crystal.

Thermally induced dielectric and conductivity properties of an Sn-doped β-Ga2O3 (-201) single crystal were investigated by frequency-domain impedance spectroscopy in the frequency window from 100 Hz to 1 MHz with temperatures between 293 and 873 K. The (-201) plane-orientated single crystalline nature and the presence of an Sn dopant in β-Ga2O3 were confirmed by X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy. Two different trends of impedance spectra have been discussed by the modulation of relaxation times and semiconductor to metallic transition after ∼723 K due to activation of a significant number of Sn dopants and their movements with temperature. The negative impedance values were encountered in the Nyquist plots (Z' vs Z″) after 573 K and constitute a reverse movement after 723 K with temperature. The average normalized change (ΔZ'/Δf)/Z0 of impedance exhibits a broad downward relaxation plateau near 723 K, indicating a weak electrical transition. The increases in the positive value of the dielectric constant (εr') below a percolating threshold temperature 573 K is attributed to the interfacial and dipolar polarizations, and the plasma oscillation of delocalized electrons governed by the Drude theory is responsible for the negative dielectric constant above 573 K. The 3D projections of the real dielectric constant create a sharp downward sinkhole near 723 K, indicating the existence of negative dielectric permittivity. The electrical conductivity dramatically changes its trends after 523 K and confirms a transition from hopping conduction (dielectric or semiconductor) following Jonscher's power law to metallic conduction by Drude theory. Below the percolating threshold temperature, a nonoverlapping small polaron tunneling conduction mechanism was unveiled with defect-induced activation energy of 0.21 eV. The Sn-doped β-Ga2O3 exhibits unique and tailored electromagnetic responses with temperatures that can be associated with a variety of applications in electromagnetic wave manipulations, cloaking devices, antennas, sensors, medical imaging, seismic wave propagation, etc.

Experimental and theoretical results of gamma shielding features for copper based shape memory alloys

In this study, the gamma ray attenuation characteristics for CuAlNi shape memory alloys with different proportions of Sn doping was investigated. We determined the mass attenuation coefficient (μ/ρ) of CuAlNiSn alloys both experimentally and theoretically within an energy range of 59.5–1332.5 keV. The experimental measurements were made using a high purity Germanium detector (HPGe) and theoretical calculations were made using WinXCOM program. To evaluate the gamma radiation shielding abilities of the alloy samples, the obtained (μ/ρ) values were used to determine the gamma protection parameters μ, HVL, TVL, MFP, and Zeff. In addition, the radiation protection efficiency (RPE) parameter was determined using gamma ray intensities in the absence and presence of the attenuator. Further analysis of the samples was conducted using a Rigaku Miniflex 600 model computer-controlled X-ray diffractometer (CuKα & λ = 1.5405 A0). The crystallographic structure of the alloys before and after irradiation was investigated. Other analysis which include EDX analysis (to investigate the chemical content) and SEM analysis (to investigate the microstructure) were conducted. According to result outcomes, gamma ray radiation did not affect the shape memory properties of structure. Another interesting observation is that, the radiation attenuation properties increase with increasing Sn concentration. Finally, we discovered that the CuAlNiSn4 alloy (which has the highest doping rate) provides good protection especially at low energy levels.

Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga2O3 thin films via MOCVD homoepitaxy

Pulsed Sn doping (PSD) homoepitaxial gallium oxide (Ga2O3) films were deposited on (-201) β-Ga2O3 substrates using metal-organic chemical vapor deposition (MOCVD). The study aims to optimize Sn doping conditions to enhance the electrical properties of β-Ga2O3 films. The influence of Sn pulse width (ranging from 0.1 min to 0.3 min) on the morphology, structure, and electrical properties of the film was investigated. The Full Width at Half Maximum (FWHM) of the (-201) crystal plane rocking curve for all doped films is <50 arcsec, indicating high crystal quality. At a Sn pulse width of 0.2 min, we achieve the optimal balance between doping efficiency and crystal quality, resulting in a resistivity of 0.0487 Ω·cm, an electron mobility of 63.5 cm2/V·s, and a carrier concentration of 1.82 × 1018 cm-3. Compared to continuous Sn doping, PSD results in approximately 157 % increase in carrier concentration and 99 % increase in electron mobility. The application of PSD allows sufficient diffusion time for Sn atoms to effectively incorporate into the film, signifying a crucial advancement in enhancing the film's electrical properties and reducing the cost of the metal organic doping source.