Smooth Sidewalls Research Articles

Direct numerical simulation of vertically heated natural convection over 3D irregular roughness

Natural convection in a cavity having an aspect ratio of 4 with irregular roughness on vertical isothermal sidewalls is investigated through compressible direct numerical simulation at a Rayleigh number of 1 × 1010. The compressible solver combined with the immersed boundary adopted in this paper is validated. The profiles of probability density functions of the thermal and hydrodynamic quantities show that at this Rayleigh number, the roughness increases the instability of the nearby fluid. In the instantaneous results, the isosurfaces of the Q-criterion reveal that a vortex is generated near roughness peaks and increases the local heat transfer, but in the valley regions, it is difficult to find vortex structures like in the peak regions. Results for the quasi-steady state show that the cavity with rough sidewalls has a lower Nusselt number on the hot wall than the smooth cavity. In other words, the roughness adversely affects the wall heat transfer. This indicates that the hot sidewall with roughness conveys less energy than the smooth wall. As a consequence, the fluid in the cavity with rough sidewalls has lower wall shear stress than that with smooth sidewalls. However, the results of the eddy heat flux show that turbulent flows generated by roughness enhance the heat transfer near the sidewalls. As the mixing effects of turbulent flows strengthen, the disparity of the average Nusselt number at the sidewall between rough and smooth cases reduces.

Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction.

Low-dimensional ZnO, possessing well-defined side facets and optical gain properties, has emerged as a promising material to develop ultraviolet coherent light sources. However, the realization of electrically driven ZnO homojunction luminescence and laser devices is still a challenge due to the absence of a reliable p-type ZnO. Herein, the sample of p-type ZnO microwires doped by Sb (ZnO:Sb MWs) was synthesized individually. Subsequently, the p-type conductivity was examined using a single-MW field-effect transistor. Upon optical pumping, a ZnO:Sb MW showing a regular hexagonal cross-section and smooth sidewall facets can feature as an optical microcavity, which is evidenced by the achievement of whispering-gallery-mode lasing. By combining an n-type ZnO layer, a single ZnO:Sb MW homojunction light-emitting diode (LED), which exhibited a typical ultraviolet emission at a wavelength of 379.0 nm and a line-width of approximately 23.5 nm, was constructed. We further illustrated that strong exciton-photon coupling can occur in the as-constructed p-ZnO:Sb MW/n-ZnO homojunction LED by researching spatially resolved electroluminescence spectra, contributing to the exciton-polariton effect. Particularly, varying the cross-sectional dimensions of ZnO:Sb wires can further modulate the exciton-photon coupling strengths. We anticipate that the results can provide an effective exemplification to realize reliable p-type ZnO and tremendously promote the development of low-dimensional ZnO homojunction optoelectronic devices.

Reactive Ion Etching of X-Cut LiNbO3 in an ICP/TCP System for the Fabrication of an Optical Ridge Waveguide

In this study, the technology for producing ridge waveguides with a minimal roughness of the sidewalls and material surface in a near-waveguide region was developed with the purpose of fabricating miniature photonic integrated circuits on a LiNbO3 substrate. Plasma etching processes were used for the ridge waveguide fabrication on different material substrates. The specifications of the equipment and plasma source, method of mask fabrication and substrate material determined the process conditions for producing ridge waveguides with minimal sidewall roughness. In this work, for the ridge waveguide fabrication, the processes of reactive ion etching of LiNbO3 with a chromium mask were carried out in a mixture of SF6/Ar with an ICP/TCP plasma source. The process of plasma etching the LiNbO3 with the ICP/TCP plasma source is not well studied, especially for integrated photonics purposes. As a result of our experimental work, the narrow ranges of technological parameters suitable for producing ridge waveguides on LiNbO3 with smooth sidewalls, a slope angle of 60°–75° and a minimal quantity of observed defects in the near-waveguide region were identified. A model explaining the kinetics of the etching process of LiNbO3 in SF6/Ar plasma as a physical–chemical process was proposed.

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability.

As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning. Here we demonstrate the use of UV-Nanoimprint Lithography and Deep Reactive Ion Etching (Bosch and Cryogenic) towards this goal. Robust processes are described for the fabrication of silicon rectangular pillars of high pattern fidelity. To demonstrate the quality of the structures, metasurface lenses, which demonstrate diffraction limited focusing and close to theoretical efficiency for NIR wavelengths λ ∈ (1.3 μm, 1.6 μm), are fabricated. We demonstrate a process which removes the characteristic sidewall surface roughness of the Bosch process, allowing for smooth 90-degree vertical sidewalls. We also demonstrate that the optical performance of the metasurface lenses is not affected adversely in the case of Bosch sidewall surface roughness with 45 nm indentations (or scallops). Next steps of development are defined for achieving full wafer coverage.

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching.

Silicon structures with ultra-high aspect ratios have great potential applications in the fields of optoelectronics and biomedicine. However, the slope and increased roughness of the sidewalls inevitably introduced during the use of conventional etching processes (e.g., Bosch and DRIE) remain an obstacle to their application. In this paper, 4-inch wafer-scale, ultra-high aspect ratio (>140:1) microscale silicon structures with smooth sidewalls are successfully prepared using metal-assisted chemical etching (MacEtch). Here, we clarify the impact of the size from the metal catalytic structure on the sidewall roughness. By optimizing the etchant ratio to accelerate the etch rate of the metal-catalyzed structure and employing thermal oxidation, the sidewall roughness can be significantly reduced (average root mean square (RMS) from 42.3 nm to 15.8 nm). Simulations show that a maximum exciton production rate (Gmax) of 1.21 × 1026 and a maximum theoretical short-circuit current density (Jsc) of 39.78 mA/cm2 can be obtained for the micropillar array with smooth sidewalls, which have potential applications in high-performance microscale photovoltaic devices.

Synergistic effects of silica fume and slag on the microstructure and mechanical behaviors of ultra-high-strength and high-ductility cementitious composites

This work evaluated the synergistic effects of silica fume (SF) and ground granulated blast furnace slag (GGBS) binders on the microstructure and mechanical behavior of Ultra-High-Strength and High-Ductility Cementitious Composites (UHS-HDCC). The potential mechanisms of the synergistic effects of GGBS and SF on the fresh flow, mechanical properties, and microstructure of UHS-HDCC were investigated. The results indicated that the use of GGBS instead of SF could effectively improve the flowability of fresh mortar and UHS-HDCC mixtures. The hydration process of cement and the heat of hydration were delayed and reduced when the content of GGBS was below 25 %. Moreover, reducing the SF while increasing the GGBS reduced the compressive strength of the composites but had little effect on the flexural strength. The compressive strength of all specimens remained above 120 MPa. All specimens achieved strain-hardening behavior after the initial cracking of the matrix in uniaxial tension and four-point bending, and had a variety of cracking characteristics. Furthermore, the range of ultimate tensile strain capacity and mid-span deflection were 3.26 %–5.79 % and 16.73 mm–33.05 mm, respectively. The S10G30 specimen reached a maximum tensile strain energy of 414.6 kJ/m3. As the level of GGBS replacing SF increased, the number of cracks in the tensile region or the compressive bending surface of UHS-HDCC specimens increased, while the crack width and crack spacing decreased. The relatively smooth sidewalls of the fiber tunnels and fiber exit points meant that matrix fragments attached to the fiber surfaces were caused by matrix fragments generated throughout the matrix cracking process. Besides, the interfacial frictional stress and slip hardening coefficient acquired from the single fiber pullout test reduced with increasing levels of GGBS replacing SF.

Aluminum nitride on insulator: Material and processing optimization for integrated photonic applications

Thin film aluminum nitride on insulator (AlNOI) has gained attention as a promising material platform for integrated photonic circuits (PICs) due to its ability to operate over a wide spectral range covering the ultra-violet to mid-infrared regions, while enabling a broad range of passive photonic functionalities. This study aims to optimize sputtered AlNOI films for PICs, with an emphasis on the spectroscopic ellipsometry study over a range from 0.19 µm to 25 µm. Furthermore, we discuss our approach for fabricating AlNOI PICs components, with a particular focus on optimizing the etching process to attain smooth sidewall waveguides.

Promotion of Specific Single-Transverse-Mode Beam Characteristics for GaSb-Based Narrow Ridge Waveguide Lasers via Customized Parameter Design

GaSb-based single-transverse-mode narrow ridge waveguide (RW) lasers with high power and simultaneous good beam quality have broad application prospects in the mid-infrared wavelength region. Yet its design and formation have not been investigated systematically, while the beam characteristics that affect their suitability for specific applications remain rarely analyzed and optimized. The present work addresses these issues by theoretically establishing a waveguide parameter domain that generalizes the overall possible combinations of ridge widths and etch depths that support single-transverse-mode operation for GaSb-based RW lasers. These results are applied to develop two distinct and representative waveguide designs derived from two proposed major optimization routes of model gain expansion and index-guiding enhancement. The designs were evaluated experimentally based on prototype 1-mm cavity-length RW lasers in the 1950 nm wavelength range, which were fabricated with waveguides having perpendicular ridge and smooth side-walls realized through optimized dry etching conditions. The model gain expanded RW laser design with a relatively shallow-etched (i.e., 1.55 upmum) and wide ridge (i.e., 7 upmum) yielded the highest single-transverse-mode power to date of 258 mW with a narrow lateral divergence angle of 11.1^circ full width at half maximum at 800 mA under room-temperature continuous-wave operation, which offers promising prospects in pumping and coupling applications. Meanwhile, the index-guiding enhanced RW laser design with a relatively deeply etched (i.e., 2.05 upmum) and narrow ridge (i.e., 4 upmum) provided a highly stable and nearly astigmatism-free fundamental mode emission with an excellent beam quality of M^2 factor around 1.5 over the entire operating current range, which is preferable for seeding external cavity applications and complex optical systems.

Effect of sidewall roughness on the diffraction efficiency of EUV high aspect ratio freestanding transmission gratings.

Manufacturing-induced sidewall roughness has a significant impact on the diffraction efficiency of extreme ultraviolet (EUV) gratings and masks, which could be evaluated by a Debye-Waller damping factor. The rough profile models of line structures are always parallel to the surface for the reflective elements. In this manuscript, a model of rough lines along the thickness direction is established, which cannot be ignored for high aspect ratio transmission gratings. Numerical calculations are carried out using both a rigorous model and a Fraunhofer approximation model. The two models agree with each other on the low-order transmission efficiencies, and the fitted Debye-Waller factor indicates a larger roughness value than that of the model due to the absorption of EUV irradiation for 90° sidewall angle. When the sidewall angle is smaller than 88°, an extra degree of freedom is introduced to the traditional Debye-Waller factor-based formula. The +1-order transmission efficiency and absorptivity with smooth and rough sidewalls are also analyzed, as well as the effect of incidence angle, wavelength and grating thickness.

Effect of corrugated side-walls on plane turbulent wall jets in narrow channels

An experimental study is presented to investigate the effect of corrugated sidewalls on submerged wall jets in narrow channels. Experiments were performed in a flume 0.3 m wide, 0.5 m deep, and 13.5 m long. Jets issued under the gate with a fixed thickness of 2.5 cm and the tailwater depth was adjusted to 37.5 cm, giving a fixed tailwater depth ratio yt/bo = 15. Experiments were conducted for five slot Froude numbers 2, 3, 4. 5, and 6. The Reynolds number ranged between 24712 and 74136. Three sets of experiments of five runs each, were performed. In Set A, the experiments were performed with smooth sidewalls whereas in Sets B and C, two arrangements of corrugated sidewalls (with gaps and with no gaps) were used, respectively. Velocity profiles along the centerline of the flume, water surface profile and the eddy length were measured for each experiment. It was found that the corrugations with gaps caused the largest decay in the maximum velocity; however, the effect of the presence of the sidewall corrugations on the velocity decay diminishes with the Froude number. Furthermore, the corrugated sidewalls with no gaps were observed to induce more flow entrainment and therefore cause a steep increase in the jet discharge and momentum flux near the slot. However, the corrugated sidewalls with gaps induced more mixing and diffusion, farther downstream from the slot, and caused a faster decay in the jet discharge and momentum. The use of corrugated sidewalls is introduced in this study as an alternative technique, to corrugated beds, to be used for energy dissipation in narrow channels. The sidewall corrugations are easier to maintain as less debris/sediments are trapped in between the corrugations. In addition, if channel maintenance is required, the movement of the maintenance facilities on a smooth bed would be much easier than that on a corrugated bed. Moreover, the sidewall corrugations will not be damaged during the maintenance process.

High-Quality Dry Etching of LiNbO3 Assisted by Proton Substitution through H2-Plasma Surface Treatment.

The exceptional material properties of Lithium Niobate (LiNbO3) make it an excellent material platform for a wide range of RF, MEMS, phononic and photonic applications; however, nano-micro scale device concepts require high fidelity processing of LN films. Here, we reported a highly optimized processing methodology that achieves a deep etch with nearly vertical and smooth sidewalls. We demonstrated that Ti/Al/Cr stack works perfectly as a hard mask material during long plasma dry etching, where periodically pausing the etching and chemical cleaning between cycles were leveraged to avoid thermal effects and byproduct redeposition. To improve mask quality on X- and Y-cut substrates, a H2-plasma treatment was implemented to relieve surface tension by modifying the top surface atoms. Structures with etch depths as deep as 3.4 µm were obtained in our process across a range of crystallographic orientations with a smooth sidewall and perfect verticality on several crystallographic facets.

β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga2O3 substrates are demonstrated. β-Ga2O3 fin channels with smooth sidewalls are produced by the plasma-free metal-assisted chemical etching (MacEtch) method. A specific on-resistance (Ron,sp) of 6.5 mΩ·cm2 and a 370 V breakdown voltage are achieved. In addition, these MacEtch-formed FinFETs demonstrate DC transfer characteristics with near zero (9.7 mV) hysteresis. The effect of channel orientation on threshold voltage, subthreshold swing, hysteresis, and breakdown voltages is also characterized. The FinFET with channel perpendicular to the [102] direction is found to exhibit the lowest subthreshold swing and hysteresis.

Improvement of imaging performance of silicon micropore X-ray optics by ultra long-term annealing.

We have been developing a light-weight X-ray telescope using micro electro mechanical systems technologies for future space missions. Micropores of 20 µm width are formed in a 4-inch Si wafer with deep reactive ion etching, and their sidewalls are used as X-ray reflection mirrors. The flatness of the sidewall is an important factor to determine the imaging performance, angular resolution. It is known that hydrogen annealing is effective to smooth a Si surface. We tested 150 hour annealing to achieve the ultimately smooth sidewalls. After 50 hour, 100 hour, and 150 hour annealing, the angular resolution improved 10.3, 4.0, and 2.6 arcmin in full width at half maximum (FWHM) and 17.0, 14.5, and 10.8 arcmin in half-power width (HPW). In spite of this improvement, the edge shapes of the sidewall were rounded. Therefore, both edges of the sidewall were ground and polished, and then the angular resolution was improved further to 3.2 arcmin (FWHM) and 5.4 arcmin (HPW).

Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs

Vertical GaN trench-gate MOSFETs with ∼130 nm stepped sidewalls in the p-GaN channel layer are studied and two significant influences have been observed compared to the devices with smooth sidewalls. The first effect is the degraded channel mobility of 14.6 cm2 (V·s)−1 to 4.5 cm2 (V·s)−1 which can be attributed to the increased probability of surface acoustic phonons scattering under inversion conditions. Another impact is that only when a drain voltage (V DS) is applied over 30 V can the devices switch on. It can be speculated that the stepped sidewall has a horizontal channel and the transverse electric field is inadequate to drive the electrons at low V DS. According to the investigation, when devices need to be switched at a high V DS, the stepped sidewall morphology should be taken into consideration.

Smooth Sidewalls on Crystalline Gold through Facet-Selective Anisotropic Reactive Ion Etching: Toward Low-Loss Plasmonic Devices.

Quantum plasmonics aims to harness the deeply subwavelength confinement provided by plasmonic devices to engineer more efficient interfaces to quantum systems in particular single emitters. Realizing this vision is hampered by the roughness-induced scattering and loss inherent in most nanofabricated devices. In this work, we show evidence of a reactive ion etching process to selectively etch gold along select crystalline facets. Since the etch is facet selective, the sidewalls of fabricated devices are smoother than the lithography induced line-edge roughness with the prospect of achieving atomic smoothness by further optimization of the etch chemistry. This opens up a route toward fabricating integrated plasmonic circuits that can achieve loss metrics close to fundamental bounds.

Diffuse Solar Micro‐Concentrators Using Dielectric Total Internal Reflection with Tunable Side and Top Profiles

Solar technology candidates for building‐integrated photovoltaics and mobile power applications suffer from difficulty in fabricating large‐area, defect‐free solar cells, high materials costs, and small angular acceptance for incoming radiation. Solar concentrators collecting non‐normal‐incidence radiation and diffuse light while retaining high concentration ratios are therefore an enticing technology for high‐efficiency‐low‐cost photovoltaic systems. Here, a novel implementation of dielectric total internal reflection concentrators (DTIRCs) utilizing a piecewise smooth sidewall profile with an intermediate segment is developed. Coupled with a turning point in the entrance surface, this design allows for a tunable phase shift between the two sidewall segments, thereby allowing both the concentration ratio at normal incidence and the maximum acceptance angle to be increased, and the limit imposed by etendue conservation to be potentially exceeded under specific conditions. Scalable fabrication techniques are used to produce flexible DTIRCs, and their performance is verified with high‐efficiency commercial solar cells. Moreover, the collectible sun power over the course of a year is calculated, demonstrating that the new design receives more total power compared to traditional direct solar concentrators and standard DTIRC designs in realistic conditions, making it a good candidate for scalable micro‐concentrator systems that can be integrated directly into a solar cell package.

Investigation of the cross-sectional morphology of epitaxial Si nanowires grown by chemical vapor deposition for the fabrication of vertical devices

The interfacial structure of Si nanowire transistors is decisively important to their electronic properties. Smooth sidewall surface of Si nanowires is therefore a prerequisite for the fabrication of vertical transistors. In this study, the axial cross-sectional morphology of epitaxial Si nanowires, which are grown vertically on Si[111] substrates by chemical vapor deposition via the vapour-liquid-solid mechanism, are analyzed by transmission electron microscopy to understand their surface morphology. It is noted that the cross-sections do not exhibit sharp facets. The roughness of the sidewall surface is attributed to precipitation of Si from AuSi liquid droplets. The cross-sectional shape of the Si nanowires is truncated-triangular, but not exactly symmetric. A larger distortion of the cross-sectional shape appears in tilted nanowires. It is also demonstrated that after removing the surface Au, post-growth oxidation of Si nanowires is helpful to rebuild smooth sidewall surface.

Preparation of lithium niobate optical thin film and patterned microstructure via chemical modification

In this paper, a stable lithium niobate (LN) sol was prepared using niobium pentachloride, niobium ethoxide, lithium acetate, anhydrous ethanol, and benzoylacetone (BzAcH) as a chemical modifier. The effects of different starting materials and organic solvents on the obtained gel film quality of the sols were studied and the optimization mechanism of BzAcH on the film quality was analyzed in detail. The effects of heat treatment temperature on the structure and performance of the LN thin films were also studied. X-ray diffraction (XRD) spectra showed that LN was more highly crystalline in the heat treatment temperature range of 600–800 °C. The refractive index of the LN thin films first increased and then decreased with increasing heat treatment temperature, and the LN thin film prepared at 700 °C had the largest refractive index. Light transmittance tests showed that as the heat treatment temperature increased, light transmittance decreased. Finally, it was determined that LN gel films modified with BzAcH were more highly sensitive to UV light and that after UV irradiation, it was difficult to dissolve LN gel films in organic solvent. The UV-sensitive property was utilized to realize microstructure processing of the LN thin films. The results indicated that a high-quality, non-destructive, and photoresist-free micro-fabrication method was realized. This method was used to fabricate microscale LN fine patterns with smooth sidewalls while avoiding lateral corrosion. These results are of great significance for LN thin film applications and the development of LN-based optoelectronic devices prepared by chemical methods.

Nested nonconcentric microring resonators with high-Q and large fabrication tolerance

Microring resonators are one of the most sought-after optical components for realizing several on-chip functionalities that include sensing, data routing, new frequency generation, and quantum photonic applications. Many of these applications demand a high quality factor and large notch depth (high extinction ratio), which can be achieved by critical coupling. However, the critical coupling is very sensitive to fabrication accuracies and thermal drift. Geometrical parameters of the resonators are generally swept to attain critical coupling, where a few designs can pass the critical coupling condition criteria. In this work, we propose a methodology to circumvent this vital issue. The proposed technique is based on coupled-resonator systems where two different microrings are embedded into a larger microring, referred to as a nonconcentric nested microring resonator (NN-MRR). The NN-MRR configuration relaxes the requirement of the critical coupling condition by 20% when the strip optical waveguide has either smooth or rough sidewalls. Numerical simulations reveal that, unlike standard MRR, a high Q -factor ( > --> 1 0 5 ) and a large transmission notch depth > --> 10 d B can be maintained irrespective of the rings’ coupling conditions for the nested MRRs. Besides the extra degree of freedom of design provided by the inner rings, the other significant advantage of the proposed NN-MRR is its compactness. We believe that the nested MRR arrangement could be highly efficient for biosensing, nonlinear, and quantum applications within a broad ambient temperature range. We have fabricated the NN-MRRs in a silicon-on-insulator platform through electron beam lithography and experimentally demonstrated the theoretical and numerical findings.

Comparison between Bosch and STiGer Processes for Deep Silicon Etching.

The cryogenic process is well known to etch high aspect ratio features in silicon with smooth sidewalls. A time-multiplexed cryogenic process, called STiGer, was developed in 2006 and patented. Like the Bosch process, it consists in repeating cycles composed of an isotropic etching step followed by a passivation step. If the etching step is similar for both processes, the passivation step is a SiF4/O2 plasma that efficiently deposits a SiOxFy layer on the sidewalls only if the substrate is cooled at cryogenic temperature. In this paper, it is shown that the STiGer process can achieve profiles and performances equivalent to the Bosch process. However, since sidewall passivation is achieved with polymer free plasma chemistry, less frequent chamber cleaning is necessary, which contributes to increase the throughput.