Small-signal Amplification Research Articles

Axon-like active signal transmission

Any electrical signal propagating in a metallic conductor loses amplitude due to the natural resistance of the metal. Compensating for such losses presently requires repeatedly breaking the conductor and interposing amplifiers that consume and regenerate the signal. This century-old primitive severely constrains the design and performance of modern interconnect-dense chips1. Here we present a fundamentally different primitive based on semi-stable edge of chaos (EOC)2,3, a long-theorized but experimentally elusive regime that underlies active (self-amplifying) transmission in biological axons4,5. By electrically accessing the spin crossover in LaCoO3, we isolate semi-stable EOC, characterized by small-signal negative resistance and amplification of perturbations6,7. In a metallic line atop a medium biased at EOC, a signal input at one end exits the other end amplified, without passing through a separate amplifying component. While superficially resembling superconductivity, active transmission offers controllably amplified time-varying small-signal propagation at normal temperature and pressure, but requires an electrically energized EOC medium. Operando thermal mapping reveals the mechanism of amplification—bias energy of the EOC medium, instead of fully dissipating as heat, is partly used to amplify signals in the metallic line, thereby enabling spatially continuous active transmission, which could transform the design and performance of complex electronic chips.

Organic small molecule catalytic PET-RAFT electrochemical signal amplification strategy for miRNA-21 detection

Quantitative detection of the cancer-associated biomarker miRNA-21 is essential for the prevention and treatment of early-stage cancer patients. In the early diagnosis of cancer, due to the low concentration of miRNA in the organism, it is necessary to develop a fast, simple, highly sensitive and specific method using signal amplification techniques. Herein, a photo-induced electron/energy transfer reversible addition-fragmentation chain transfer polymerization signal amplification electrochemical biosensor was developed. Peptide nucleic acid was used as the recognition probe for miRNA-21 and the chain transfer agent (4-cyano-4-(dodecylsulfonylsulfanylthiocarbonyl)sulfonylpentanoic acid) bearing a carboxylic acid group was successfully conjugated with a phosphate group in the presence of ZrOCl2 to form the phosphate-Zr(IV)-carboxylic acid complex. Subsequently, the polymerization of the monomer (ferrocenylmethyl methacrylate) was achieved by blue light irradiation in the presence of erythrosin B (higher triple quantum yield) and triethanolamine (increases electron transfer rate). With this sophisticated signal amplification biosensing platform, low detection limit of 12.4 aM was achieved for miRNA-21. The biosensor reduces costs and simplifies experimentation while ensuring high sensitivity and selectivity. Meanwhile, the biosensor exhibits excellent anti-interference ability in serum samples and has great potential for practical applications in the early prevention of cancer.

Gain Measurement of ZnGeP2 Optical Parametric Oscillator Pulses in a High-Pressure CO2 Amplifier

Laser pulse amplification by a high-pressure CO2 amplifier in the long-wave infrared (LWIR) spectral range is a feasible technology for strong-field physics research. Crystals such as ZnGeP2 (ZGP) have high nonlinear coefficients and transmittance in the LWIR region, with spectral widths of generated pulses closely matching the gain spectrum of high-pressure CO2 amplifiers. Therefore, ZGP optical parametric oscillation (OPO) may allow higher-efficiency energy extraction in amplifiers, improving the output characteristics of LWIR amplification systems. In this study, the gain measurement of ZGP OPO pulses amplified by a high-pressure CO2 amplifier was carried out for the first time. Single-detector acquisition was utilized to achieve a unified sensor responsivity, and a laser signal-triggered function generator was used to synchronize the seed pulse and amplifier. Six-pass amplification was performed successively, yielding an amplification factor of 4.5 for the peak power and a maximum coefficient of 0.42% cm−1 for the small-signal gain. The gain and loss effect during small-signal amplification were discussed. The potential capability of acquiring ultra-short pulses with ZGP OPO pulses was also explored with the FFT function of MATLAB software.

A fiber-solid hybrid 1319 nm single-frequency MOPA Laser for sodium Doppler lidar

The narrow linewidth nanosecond pulse 1319 nm laser used to generate 589 nm laser is the core technology of sodium Doppler lidar. Here, a high gain fiber-solid hybrid amplifier seeded by a 1319 nm distributed-feedback laser diode (DFB-LD) is proposed to achieve high-power amplification of small signal 1319 nm pulse laser. A pulsed 1319 nm laser with a repetition frequency of 500 Hz, a pulse duration of 500 ns, an energy of 10.3 mJ and a linewidth of 1.9 MHz was developed by utilizing a three-stage fiber coupled end-pumped amplifier and a two-stage Innoslab amplifier, and the beam quality factor M2 is less than 1.6, the gain of the solid amplification system exceeds 28 dB.

Generation, Transmission, and Amplification of OAM Modes in the PbSe-Doped Ring-Core Fiber Carrying 3D Printed Spiral Phase Plate

Vortex beams carrying orbital angular momentum (OAM) have increasingly attracted attention in the field of optical communication. However, transmission is still an issue due to transmission loss, especially in optical fibers. In this work, we proposed, designed, and fabricated micro spiral phase plates (SPPs) directly on an end facet of a piece of PbSe-doped ring-core fiber (RCF) through two-photon polymerization, realizing the integration of OAM beam generation, transmission, and amplification. The prepared RCF comprises a double-clad structure with a core-clad refractive index difference of 2.2% and the fluorescence range is 1150 nm–1700 nm. The intensity distribution of the OAM beam and the spiral interference fringes were obtained, which indicated that the OAM mode (|l|=1, 2, 3, 4) was generated and transmitted directly within the fiber. The small-signal amplification of four OAM modes was accomplished at 1550 nm under a pump power of 634 mW. The on–off gain is >13.2 dB for all modes and the differential mode gain (DMG) is <1.7 dB. The SPP-carrying RCF structure demonstrates the integration of generation, transmission, and amplification of higher-order OAM modes in all-fiber systems.

Subthreshold Schottky-contacted carbon nanotube network film field-effect transistors for ultralow-power electronic applications

Ultralow-power electronics is critical to wearable, portable, and implantable applications where the systems could only have access to very limited electrical power supply or even be self-powered. Here, we report on a type of Schottky barrier (SB) contacted single-walled carbon nanotube (SWCNT) network film field-effect-transistors (FETs) that are operated in the subthreshold region to achieve ultralow-power applications. The thin high-k gate dielectric and the overlap between the gate and the source electrodes offer highly efficient gate electrostatic control over the SWCNT channel and the SB at the source contact, resulting in steep subthreshold switching characteristics with a small subthreshold swing (∼67 mV dec−1), a large current on/off ratio (∼106), and a low off-state current (∼0.5 pA). A p-channel metal-oxide-semiconductor inverter built with the subthreshold SB-SWCNT-FETs exhibits a well-defined logic functionality and small-signal amplification capability under a low supply voltage (∼0.5 V) and an ultralow power (∼0.05 pW μm−1). The low-voltage and deep subthreshold operations reported here could lay an essential foundation for high-performance and ultralow-power SWCNTs-based electronics.

High-quality rotary Nd:YAG disk amplifier with an azimuthally polarized output beam

A rotary Nd:YAG disk amplifier with a doughnut shape pump beam for azimuthally polarized laser maintaining high amplification efficiency and high-quality amplification is demonstrated. Using a 2 mm thick disk as an amplifier, the amplification of small signals with different power under different pump power is investigated. Under the maximum absorbed pump power of 34.7 W, after a single-pass the seed power of 1 W and 5 W can be amplified by the amplification factor about 3.3 and 2, respectively, and the beam quality and the polarization purity remain well.

Design and implementation of an analog signal isolation conditioning circuit

In control systems, external analog signals need to be converted into digital signals. When sampling external input analog signals, such as voltage or current, it is necessary to process the small analog signal amplification or large signal reduction to the digital signal that can be sampled normally by the ADC; at the same time, the complexity of the external environment will affect the accuracy of sampling, and the input and output isolation processing needs to be carried out. Therefore, in order to solve the problem of low sampling accuracy of analog signal ADC in complex environment, this paper proposes an analog signal isolation conditioning circuit, which can filter out the high-frequency noise in the input signal without affecting the rapid sampling of the ADC, and use two-stage operation amplification to perform gain and zero compensation processing, so that the conditioned signal has high accuracy, good linearity, and strong anti-interference ability, which meets the design requirements. Through functional and stress tests, the functional correctness and performance stability of the analog signal isolation conditioning circuit proposed in this paper are verified.

Highly efficient diode-pumped alkali-vapor amplification with near-extreme-limit gain.

We report high-efficiency optical amplification with near-extreme-limit gain from a diode-pumped Cs vapor cell. We used wavelength-division multiplexing to couple 852 nm pump and 895 nm seed lasers to achieve nearly overlapping spatial modes in the Cs vapor cell. We investigated the amplification factor as a function of the focal length of the lens focusing on the combined pump and seed signals and determined the optimal focal length under our experimental conditions. The small-signal amplification factor from the Cs vapor cell reached >30 dB at 240 mW pump power, and the optimal optical amplification factor per pump power was 4171/W.

Plant and animal small RNA communications between cells and organisms.

Since the discovery of eukaryotic small RNAs as the main effectors of RNA interference in the late 1990s, diverse types of endogenous small RNAs have been characterized, most notably microRNAs, small interfering RNAs (siRNAs) and PIWI-interacting RNAs (piRNAs). These small RNAs associate with Argonaute proteins and, through sequence-specific gene regulation, affect almost every major biological process. Intriguing features of small RNAs, such as their mechanisms of amplification, rapid evolution and non-cell-autonomous function, bestow upon them the capacity to function as agents of intercellular communications in development, reproduction and immunity, and even in transgenerational inheritance. Although there are many types of extracellular small RNAs, and despite decades of research, the capacity of these molecules to transmit signals between cells and between organisms is still highly controversial. In this Review, we discuss evidence from different plants and animals that small RNAs can act in a non-cell-autonomous manner and even exchange information between species. We also discuss mechanistic insights into small RNA communications, such as the nature of the mobile agents, small RNA signal amplification during transit, signal perception and small RNA activity at the destination.

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection.

This paper presents a minimum signal model via the AC small-signal model and the uncertainty principle, which reveals the minimum AC signal that can be amplified by a bipolar transistor. The Ebers—Moll model (EM3) can describe the small signal amplification process, but it is difficult to define the minimum amplifiable signal of the bipolar transistor. In this study, the correspondence relationship between the non-equilibrium carrier and the electric injection is proved, and the relationship between the life of the non-equilibrium carrier and the measurable signal is proposed by the uncertainty principle. Next, the limit of perceived minimum voltage is also derived in this paper. Then, combining with EM3 model, the minimum AC signal model of bipolar transistor is presented to calculate the minimum voltage signal of bipolar transistor that can be amplified. Finally, a number of the simulation and experiment results show that when the minimum signal in the model is used as input, the carrier concentration of the bipolar transistor does not change and the base electrode cannot perceive the signal, which verifies the validity of the minimum AC signal model.

Backscatter-Immune Injection-Locked Brillouin Laser in Silicon

As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser's frequency and phase can be controlled by an injected signal. Due to its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection locking dynamics remain relatively untapped--despite significant potential for technological and scientific impact. Here, we demonstrate injection locking in a silicon photonic Brillouin laser for the first time. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and back-scatter immunity in an all-silicon system. This device physics opens the door to new strategies for phase noise reduction, low-noise amplification, and back-scatter immunity in silicon photonics.

An undergraduate laboratory experiment to build and characterize a thermionic triode for use as an audio amplifier

Although largely superseded by transistors for small signal amplification, the thermionic valve (or tube) still finds use in high-fidelity audio amplifiers, in guitar amplifiers and in high-power radio and television transmitters, where their power to size scalability has advantages over solid state devices. In the undergraduate experiments detailed here students construct a triode inside a vacuum chamber, and investigate the effects of different designs on signal gain. The characteristics of their triodes are measured to determine the optimal condition for signal amplification. The triode is then used to amplify an audio signal to determine the frequency response, and they can listen to the results via headphones using an input signal of their choice. This experiment hence introduces students to vacuum technology, to electron beams and to analog electronics.

Readout Circuit Design Using Experimental Data of Line-TFET Devices

By considering the analog characteristics of Line Tunneling Field Effect Transistors (Line-TFETs) that are suitable for small-signal amplification, this paper studies the design of a readout circuit with these devices while making comparisons with conventional MOSFET designs. The results show that the Line-TFET design exhibits high gain and low reading error (51dB open loop gain) while using a simple one-stage amplifier and results in a huge reduction in circuit area by using pseudo feedback resistors that have their differential resistance increased for smaller dimensions, achieving up to 50Gohm in a 120nm x 100nm device. This enables cutoff frequencies below 1Hz while using nanometer devices and smaller capacitors. Moreover, the readout circuit achieves 33nW of power consumption even though the Line-TFET devices are not biased in the subthreshold regime.

All-fibre single-mode small-signal amplifier operating near 0.976 μm

We have developed and demonstrated a polarisation-maintaining single-mode ytterbium-doped fibre for light amplification at a wavelength near 0.976 μm in an all-fibre configuration. A distinctive feature of the proposed fibre design is low losses due to fusion splices with standard single-mode fibre having a core diameter of 10 μm, which has made it possible to produce an all-fibre small-signal amplifier with a gain threshold near 3 W and a differential pump-to-signal conversion efficiency of 9.8 % in the saturation regime. The proposed amplifier has been shown to be well-suited for small-signal amplification. In particular, at an input signal power near 1 mW and a gain of 20 dB, the ratio of the amplified signal to the integrated luminescence intensity near 0.976 μm exceeds 20 dB. A 40-dB gain has been demonstrated for an ultrasmall signal of ∼10-μW power.

Experimental simultaneous readout of the real and imaginary parts of the weak value

The weak value, the average result of a weak measurement, has proven useful for probing quantum and classical systems. Examples include the amplification of small signals, investigating quantum paradoxes, and elucidating fundamental quantum phenomena such as geometric phase. A key characteristic of the weak value is that it can be complex, in contrast to a standard expectation value. However, typically only either the real or imaginary component of the weak value is determined in a given experimental setup. Weak measurements can be used to, in a sense, simultaneously measure non-commuting observables. This principle was used in the direct measurement of the quantum wavefunction. However, the wavefunction's real and imaginary components, given by a weak value, are determined in different setups or on separate ensembles of systems, putting the procedure's directness in question. To address these issues, we introduce and experimentally demonstrate a general method to simultaneously read out both components of the weak value in a single experimental apparatus. In particular, we directly measure the polarization state of an ensemble of photons using weak measurement. With our method, each photon contributes to both the real and imaginary parts of the weak-value average. On a fundamental level, this suggests that the full complex weak value is a characteristic of each photon measured.

(Invited) Performance Evaluation of III-N Bipolar Switches Grown on GaN Substrates

The successful development of III-V nitride materials systems has led to active research of advanced electronic devices in the recent decades. III-nitride (III-N)-based devices have a bandgap engineering flexibility, large energy gap, direct band structure, and high carrier mobility when compared to Si- and SiC -based devices, providing new performance improvement opportunities for high-speed and energy-efficient electronics. Today, commercial GaN HFETs are available for microwave power amplifiers and power electronic circuits. On the other hand, the development of bipolar transistors and the related switch technologies are essential to fully exploit the potential of III-N materials systems. For instance, insulated-gate-bipolar transistors would require integrated bipolar transistor and unipolar transistor structures. The development of III-N bipolar switches in either two-terminal or three-terminal forms have therefore been actively sought. To this end, power switches that conduct the electric current in the vertical form are beneficial to achieve the ultimate Baliga’s Figure of Merit (BFOM) for switching. For GaN bipolar power switches development, low-defect-density native substrates, high-quality epitaxial growth technology, and proper device design and fabrication have become major focus areas of research. Early development of heterojunction bipolar transistors (HBTs) using GaN/InGaN heterojunctions at Georgia Tech showed promising device performance. These devices exhibited high-current gain of >100, high current drive density of >100 kA/cm2, and high d.c. power handling capability of > 3 MW/cm2. Small-signal microwave amplification with a cut-off frequency (f T) of 8GHz was reported. In this presentation, we will review the development status of III-N bipolar switches and use GaN rectifiers as a case study to discuss the device performance pertinent to the choices of GaN substrates prepared by different methods. The device structures were grown and fabricated at Georgia Tech and the device performance correlation with respect to the substrates were evaluated. High-power operation was demonstrated for homojunction GaN PIN rectifiers grown on a 2-inch bulk GaN substrate using a metalorganic chemical vapor deposition (MOCVD) reactor. The GaN substrate was prepared using a near-equilibrium ammonothermal (NEAT) method. The device fabrication employed an ion-implantation isolation, field plate, and electroplated copper electrodes. The fabricated devices have dimensions up to 1.1 mm in diameter and showed uniform V on of 3.6±0.1 V and an ideality factor of 2.08. A blocking voltage (BV) of >1.2 kV and the on-state resistance (R ON A) of 0.4 mΩ·cm2 were measured. For PIN rectifiers with a dimension of 1.1 mm in diameter, we reported a BV of 1,200 V and an on-state current drive of greater than 11 A (1 kA/cm2). These results demonstrated the feasibility of using bipolar carrier transport mechanisms and PN junctions in III-N devices for power amplifications and switching circuits.

Fully Printed Organic Electrochemical Transistors from Green Solvents

AbstractTo achieve the full potential of scalable and cost‐effective organic electronic devices, developments are being made in both academic and industry environments to move toward continuous solution‐processing techniques that make use of safe and environmentally benign “green” solvents. In this work, the first example of a transistor device that is fully solution processed using only green solvents is demonstrated. This achievement is enabled through a novel multistage cleavable side chain process that provides aqueous solubility for semiconducting conjugated polymers, paired with aqueous inkjet printing of PEDOT:PSS electrodes, and a solution deposited ion gel electrolyte as the dielectric layer. The resulting organic electrochemical transistor devices operate in accumulation mode and reach maximum transconductance values of 1.1 mS at a gate voltage of − 1 V. Normalizing the transconductance value to the channel dimensions yields gm/W = 2200 S m−1 (µC* = 22 F cm−1 V−1 s−1), making these devices suitable for a range of applications requiring small signal amplification such as transistors, biosensors, and ion pumps. This new material design and device process paves the way toward scalable, safe, and efficient production of organic electronic devices.

Thermometric chains for ITER superconductive magnets

High environmental constraints are applied on the ITER magnets and therefore on their cryogenic thermometric chains. Accurate and reliable temperature measurements of the ITER magnets and their cooling circuits is of fundamental importance to make sure they operate under well controlled and reliable conditions. Therefore, thermometric chains shall reach a high operation reliability. In this paper, we present the full thermometric chain installed on the ITER magnets and their helium piping as well as the associated components production.The thermometric chain is described from the signals conditioning electronics, to the sensor and its on-pipe assembly. The thermometric block design is based on the CERN's developed one for the LHC, which has been further optimized thanks to thermal simulations carried out by CEA to reach a high quality level for an industrial production. The ITER specifications are challenging in terms of accuracy and call for severe environmental constraints, in particular regarding irradiation level, electromagnetic immunity and distance between the sensors and the electronic measuring system. A focus will be made on this system, which has been recently developed by CEA. It is based on a lock-in measurement and amplification of small signals, and provides a web interface and a software to monitor and record the temperatures. This measuring device provides a reliable system for resistive temperature sensors between a few ohms and 100 kOhms.During last two years, around 2600 thermo-blocks and nearly 50 crates of five boards, with eight channels each, have been produced and tested at CEA low temperature laboratory. All these developments and tests have been carried out thanks to three test benches built up at CEA Grenoble and in one industrial electronics laboratory. Test benches results on the entire production are presented.

Optical property measurements of 235 mm large-scale Ti:sapphire crystal

A Ti:sapphire crystal with a diameter of 235 mm and thickness of 72 mm was grown by the heat exchange method (HEM). The absorption intensity of the crystal at 532 nm averaged at 91%. The figures of merit (FOMs) at different positions of the crystal were measured and the FOM value in the central region was found to reach 90. The transmittance laser beam was intact with no obvious distortions and had only a small deformation compared with the incident laser beam. A small-signal amplification experiment was performed on the Ti:sapphire crystal and a gain of more than 6 times was achieved with a pump energy density of 1.98 J/cm2. These tests indicate that the 235 mm Ti:sapphire crystal has excellent optical qualities and will further improve the energy output of a 10 PW laser system.