As compared to other types of flash memory, NAND flash memory is attracting attention as the next generation storage device for its low power use and fast access speed, which make it suitable for ubiquitous and mobile environment. In particular, flash memory is being used in storage devices in many fields, including the memory system of small mobile devices, as well as SSD (solid state disk) of large memory. Active research is underway for the efficient use of flash memory. However, NAND flash memory based storage devices exhibit unique hardware characteristics, such as erasing structure, and the B-tree index structure causes performance degradation when repeated writing requests are made. In order to enhance these problems, the present paper proposes to use NAND flash memory-based failure recovery improvement technique using the T*-tree. After conducting performance evaluation of the proposed technique and the existing technique, the proposed technique was found to be more efficient in its performance by 69%, compared to the existing technique.
Read full abstract