The concerns about copper (Cu) interconnects have been increasing because the Cu line resistance will not linearly scale with the dimension in 7 nm technology and beyond1. Instead, Cu resistivity in small features increases significantly because of the electron scattering at grain boundaries and interfaces2. To solve this problem, alternative metals such as cobalt (Co) is considered as a promising material because of its high melting point and small mean free path. High melting temperature lows the risk of electromigration3 and small mean free path decreases the contribution from electron scattering at boundaries and interfaces. Recently, defect-free filling of Co in nanoscale features has been achieved using proprietary additives4-6. The additives play an important role in such processes creating differential plating rates between the feature bottom and field regions. Different functional groups in organic additives were found to influence electrodeposition kinetics. For instance, additives with a conjugated pair of oxime groups displayed strong suppression effects on Co deposition and a suppression breakdown occurs upon the reduction of adsorbed Co-dioxime chelates7. This talk presents a study, where we used several dioxime additives like dimethylglyoxime (DMG), cyclohexane dioxime (CHD), and furil dioxime (FD) to investigate their impacts on Co nucleation process. Figures 1 (a) and (b) show the chronoamperometries during the Co nucleation in presence of DMG and CHD, respectively. Two current peaks were observed, which are ascribed to a unique two-step nucleation behavior involving free cobalt cation and complexed cobalt chelates. Figure 1(c) shows the cyclic voltammetry of Co deposition with FD, where a concentration dependent suppression effect was observed. Figure 1(d) shows the normalized nucleation current transients numerically deconvoluted from the total currents. A progressive nucleation was observed. The results will be discussed in detail in conjunction with microscopic observations. REFERENCES Steinhögl, W.; Schindler, G.; Steinlesberger, G.; Engelhardt, M., Size-dependent resistivity of metallic wires in the mesoscopic range. Physical Review B 2002, 66 (7), 075414.Wu, W.; Brongersma, S.; Van Hove, M.; Maex, K., Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions. Applied physics letters 2004, 84 (15), 2838-2840.Adelmann, C.; Wen, L. G.; Peter, A. P.; Siew, Y. K.; Croes, K.; Swerts, J.; Popovici, M.; Sankaran, K.; Pourtois, G.; Van Elshocht, S. In Alternative metals for advanced interconnects, Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2014 IEEE International, IEEE: 2014; pp 173-176.Rigsby, M. A.; Brogan, L. J.; Doubina, N. V.; Liu, Y.; Opocensky, E. C.; Spurlin, T. A.; Zhou, J.; Reid, J. D., Superconformal Cobalt Fill through the Use of Sacrificial Oxidants. ECS Transactions 2017, 80 (10), 767-776.Wafula, F.; Wu, J.; Branagan, S.; Suzuki, H.; Gracias, A.; van Eisden, J. In Electrolytic Cobalt Fill of Sub-5 nm Node Interconnect Features, 2018 IEEE International Interconnect Technology Conference (IITC), IEEE: 2018; pp 123-125.Kelly, J.; Chen, J.-C.; Huang, H.; Hu, C.; Liniger, E.; Patlolla, R.; Peethala, B.; Adusumilli, P.; Shobha, H.; Nogami, T. In Experimental study of nanoscale Co damascene BEOL interconnect structures, Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International, IEEE: 2016; pp 40-42.Lyons, T.; Huang, Q., Effects of Cyclohexane-Monoxime and Dioxime on the Electrodeposition of Cobalt. Electrochimica Acta 2017, 245, 309-317. Fig. 1 (a) Co nucleation process with the addition of 100 ppm DMG (b) Co nucleation process with the addition of 10 ppm CHD (c) The CV results with the addition of different concentration of FD (d) Normalized current transients with 10 ppm FD. Figure 1
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