Slow Light Devices Research Articles

Three-dimensional metamaterial for reconfigurable multi-band electromagnetically induced transparency based on VO2

Conventional 2D planar metamaterials struggle to achieve multi-band electromagnetically induced transparency (EIT) effects due to structural constraints. This paper proposes what we believe to be a novel three-dimensional (3D) metamaterial consisting of a vertical split-ring resonator with vanadium dioxide (VO2) islands at the openings. Based on VO2’s reversible phase transition capabilities, the designed metamaterial has excellent reconfigurability for multi-band EIT effects. When the surface temperature is at room temperature, VO2 exhibits an insulating state. The near-field coupling between bright and dark modes leads to a triple-band EIT effect at 1.72, 1.82, and 1.91 THz, characterized by multi-band, low-loss, and narrowband filtering. In contrast, when the temperature exceeds 68°C, VO2 transitions to its metallic state, resulting in a single transmission window with favorable slow light characteristics. Compared to traditional EIT metamaterials, our work realizes multi-band modulation and switchable operating modes, enhancing flexibility and adaptability. The excellent performance indicates its suitability for various applications, including multi-channel sensors, switchable absorptions, enhancing coupling and slow light devices, etc.

High Q transparency, strong third harmonic generation, and giant nonlinear chirality driven by toroidal dipole-quasi-BIC

Electromagnetically induced transparency (EIT), nonlinearity, and optical chirality hold significant applications in many areas such as optical switches, slow-light devices, chiral harmonic conversion, and optical storage. In this work, we theoretically propose an asymmetric all-dielectric metasurface supporting toroidal dipole-quasi-bound states in the continuum (TD-q-BICs). High quality (Q) EIT, strong third harmonic generation (THG), and giant nonlinear chirality are achieved via the extremely enhanced electric field energy localized in the Si plate by the TD-q-BIC. A huge transition from high Q EIT with transmission of ∼0.99 to strong chirality with circular dichroism (CD) of ∼0.9 is realized by tuning the angle and polarization state of incident light. Strong THG with efficiency of 4.5 × 10−3 under linear polarization light is due to the highly localized electric field supported by the TD-q-BIC and perfect nonlinear CD chirality with theoretically value of ∼1 originates from the large discrepancy in electric field distributions under different circularly polarized light. Our work provides an innovative paradigm to construct TD-q-BICs-governed EIT analogs, THG, and nonlinear chirality for the development of multifunction nanophotonic meta-devices.

Tunable and polarization-dependent electromagnetically induced transparency analogy in graphene-based terahertz metasurfaces

In this paper, we theoretically and numerically demonstrate a tunable and polarization-dependent electromagnetically induced transparency analogy based on graphene terahertz metasurfaces. The unit cell of the metasurface consists of three-layer graphene strips embedded in a silicon grating. The dynamic adjustment of the transparent window can be achieved by changing the coupling distance between the graphene layers and the polarization direction of the incident lights. The operation mechanism behind the phenomenon can be attributed to the near-field interaction and electromagnetic coupling of modes in graphene strips. Furthermore, the full wave electromagnetic simulations obtained by the finite-difference time-domain method agree well with the theoretical fitting results based on the three-harmonic oscillator model. In addition, by changing the Fermi levels, it can not only realize the outstanding slow-light effects with a maximum group index of 3750 but also obtain the four-frequency asynchronous optical switch function in terahertz regions. Therefore, our proposed metamaterial device may have potential applications in image switching, optical switches, slow-light device, optical communication, and optical storage.

Graphene modulator and 2-bit encoder based on plasma induced transparency effect

Within this study, a periodic metasurface structure made up of two graphene strips, two fan-shaped graphene and a square ring graphene with notches is introduced to achieve plasma-induced transparency (PIT). The PIT effect is analyzed utilizing the Lorentz oscillatory coupling model, and it has been discovered that the theoretical values closely match the simulated values. The role of the Fermi level adjustments in graphene on the PIT effect was examined, and the PIT window was dynamically modified as the Fermi level changed, which was used to realize a 2-bit graphene encoder at 5.78 THz and 7.18 THz. The encoder boasts a greatest modulation depth of 80.9 % and exhibits a minimal insertion loss of 0.17 dB. By controlling the polarization direction of the incident photoelectric field, a high performance dual-channel switching modulator is successfully realized. Moreover, by increasing carrier mobility, the depth of modulation for the modulator at 11.22 THz is increased from 97.5 % to 99.5 %, and the insertion loss has dropped from 0.075 dB to 0.06 dB. In addition, the structure has superior sensing properties and slow light properties, featuring a sensitivity reaching up to 1.07 THz/RIU and a maximum group index of 293. The outcomes of our study contribute novel insights for the advancement of modulator, encoder, sensor technology and slow-light devices.

Controllable dual resonances of Fano and EIT in a graphene-loaded all-dielectric GaAs metasurface and its sensing and slow-light applications

Abstract Active nanophotonic metasurfaces have attracted considerable attention for their promise to develop compact, tunable optical metadevices with advanced functions. In this work, we theoretically demonstrated the dynamically controllable dual resonances of Fano and electromagnetically induced transparency (EIT) using a graphene-loaded all-dielectric metasurface with U-shaped gallium arsenide (GaAs) nanobars operating in the near-infrared region. The destructive interference between a subradiant mode (i.e., a dark mode) supported by two vertical GaAs bars and two radiative modes (i.e., two bright modes) supported by a horizontal GaAs nanobar gives rise to a Fano resonance and an EIT window with high transmission and a large quality factor (Q-factor) in the transmission spectrum. Importantly, the transmission amplitudes can be flexibly modulated by adjusting the graphene Fermi levels without rebuilding the nanostructures. This modulation results from the controllable light absorption by the loaded graphene monolayer due to its interband losses in the near-infrared spectrum. Furthermore, the peak wavelengths of the Fano resonance and EIT window with high Q-factors are highly sensitive to variations in the refractive index (RI) of the surrounding medium, giving the proposed metasurface a relatively good sensitivity of ~700 nm/RIU and a high figure of merit (FOM) of 280, making it an effective RI sensor. Additionally, the metasurface features an adjustable slow light effect, indicated by the adjusted group delay time ranging from 0.12 ps to 0.38 ps. Therefore, the metasurface system proposed in this work offers a viable platform for advanced multi-band optical sensing, low-loss slow light devices, switches, and potential applications in nonlinear optical fields.

Enhancing phase modulation and group delay in reflective Huygens metasurfaces via a Fabry-Perot cavity

Huygens metasurfaces exhibit excellent optical properties such as 2π phase modulation and slow light effects. However, they face challenges including wide bandwidth and low group delay due to their high radiation losses. Here, we propose a reflective Huygens metasurface coupled with an F-P cavity. We demonstrate that F-P resonance modes can couple with magnetic-quasi-bound-state (M-QBIC) and electric-quasi-bound-state (E-QBIC) in the Huygens metasurface through constructive interference, significantly enhancing the quality factors of both QBICs. Through structural parameter optimization, our reflective Huygens metasurface achieves 4π phase modulation and a high group delay of up to 166 ps. Compared to the non-coupled Huygens metasurface with the same structural asymmetry, the group delay of the F-P coupled reflective Huygens metasurface is enhanced by up to 30 times. Our design reduces the fabrication precision requirements for Huygens metasurfaces, enabling similar group delays to be achieved in low-symmetry coupling structures as in highly symmetric non-coupling structures. Additionally, the performance of this metasurface shows robustness to changes in incident light polarization. This design highlights the potential for achieving high-quality factors, large phase modulation, and large group delay, offering new avenues for the design of highly sensitive tunable devices, efficient nonlinear optical devices, and narrowband slow light devices.

Adjustable slow light with high group index in a graphene metasurface based on plasmon-induced transparency

A relatively simple metasurface structure is proposed to achieve a dynamically tunable slow light effect. The metasurface consists of two horizontal graphene strips and two vertical continuous graphene strips. Strong interference between the bright and dark modes enables the metasurface to generate a significant triple plasmon-induced transparency (PIT). Varying the coupling distance between the horizontal strips, double-PIT and triple-PIT can be transformed into each other. During the reduction of the transparent window, electromagnetic waves undergo strong phase changes, resulting in a higher group index. After structural optimization, the maximum time delay and group index can be as high as 2.624 ps and 3934, surpassing comparable slow light devices. The proposed patterned graphene metasurface provides theoretical guidance for designing high-performance slow light devices for optical storage, nonlinear optics and quantum optics.

Tunable multifunctional terahertz metamaterial device based on metal-dielectric-vanadium dioxide

The Electromagnetically Induced Transparency (EIT) effect in terahertz (THz) metamaterial devices has garnered extensive attention owing to its distinctive advantages in the slow light devices and quantum communication. However, the application of EIT has been constrained by the limitation to a single transparent window and the fixed intensity of the electromagnetic response at the transmission peak after fabrication. To achieve a dual-frequency EIT effect and enable active tunability, this paper presents a tunable multifunction THz metamaterial device based on vanadium dioxide (VO2). The transition of VO2 from the insulator to the metal allows for the active control of EIT and multi-band absorption switching in the THz range. When VO2 is in its dielectric state, two EIT-like windows could be observed with a maximum value of 86.9 % and 71.7 % of the transmission amplitude, respectively. By adjusting the temperature of the VO2, a modulation depth of up to 99 % can be achieved, enabling active control of the EIT-like effect. In addition, active adjustment of group delay of up to 5.47 ps was demonstrated. When VO2 is in the metallic state, the device serves as a tunable multiband absorber, capable of achieving perfect absorption and modulation amplitude of up to 92 %. The results indicated that the presented devices hold significant value for research in the THz range, particularly for applications related to switching and slow light devices. Therefore, the tunable multifunctional THz metamaterial device is of great significance for THz technology.

Tunable triple plasmon-induced transparency in E-type graphene metamaterials.

Enhancing light-matter interaction is crucial for boosting the performance of nanophotonic devices, which can be achieved via plasmon-induced transparency (PIT). This study introduces what we believe to be a novel E-type metamaterial structure crafted from a single graphene layer. The structure, comprising a longitudinal graphene ribbon and three horizontal graphene strips, leverages destructive interference at terahertz frequencies to manifest triple plasmon-induced transparency (triple-PIT). Through a comparison of simulations using the finite difference time domain (FDTD) method and theoretical coupled-mode calculations, we elucidate the physical mechanism behind triple-PIT. Our analysis shows that the PIT effect arises from the interplay between two single-PITs phenomena, further explored through field distribution studies. Additionally, we investigate the impact of varying Fermi levels and carrier mobility on the transmission spectrum, achieving amplitude modulation in photoelectric switches of 85.5%, 99.2%, and 93.8% at a carrier mobility of 2 m2/(V·s). Moreover, we explore the relationship between Fermi levels and carrier mobility concerning the slow light effect, discovering a potential group index of up to 1021 for the structure. These insights underscore the significant potential of this graphene-based metamaterial structure in enhancing optical switches, modulators, and slow light devices.

Tunable high-Q resonances based on the asymmetric nanohole array of phase-change material

Dielectric metasurfaces have made great progress over the past decade to enhance light-matter interaction. Recently, dielectric nanohole structures have been employed for the creation of dielectric metasurfaces. However, the optical characteristics of most dielectric nanohole structures remain fixed once they are manufactured. This study investigates the optical properties of Ge2Sb2Te5 (GST) film perforated with a periodic dual nanohole array. The GST dual nanohole array is capable of supporting multiple guided resonances and bound states in the continuum (BICs). By introducing asymmetry in the radius, BICs can be transformed into quasi-BICs with high-Q resonances. The wavelengths of guided resonances and quasi-BICs can be dynamically controlled through the phase transition of GST. Furthermore, modifying the gap allows for the achievement of active high-Q electromagnetically induced transparency, resulting from the interaction between one guided resonance and one quasi-BIC mode. The GST asymmetric nanohole array holds potential for applications in optical modulators, slow-light devices, and nonlinear optical devices.

Ultra-wideband terahertz fingerprint enhancement sensing and inversion model supported by single-pixel reconfigurable graphene metasurface

AbstractThe molecular fingerprint sensing technology based on metasurface has unique attraction in the biomedical field. However, in the terahertz (THz) band, existing metasurface designs based on multi-pixel or angle multiplexing usually require more analyte amount or possess a narrower tuning bandwidth. Here, we propose a novel single-pixel graphene metasurface. Based on the synchronous voltage tuning, this metasurface enables ultra-wideband ($$\sim$$ ∼ 1.5 THz) fingerprint enhancement sensing of trace analytes, including chiral optical isomers, with a limit of detection (LoD) ≤ 0.64 μg/mm2. The enhancement of the fingerprint signal ($$\sim$$ ∼ 17.4 dB) originates from the electromagnetically induced transparency (EIT) effect excited by the metasurface, and the ideal overlap between the light field constrained by single-layer graphene (SLG) and ultra-thin analyte. Meanwhile, due to the unique nonlinear enhancement mechanism in graphene tuning, the absorption envelope distortion is inevitable. To solve this problem, a universal fingerprint spectrum inversion model is developed for the first time, and the restoration of standard fingerprints reaches Rmax2 ≥ 0.99. In addition, the asynchronous voltage tuning of the metasurface provides an opportunity for realizing the dynamic reconfiguration of EIT resonance and the slow light modulation in the broadband range. This work builds a bridge for ultra-wideband THz fingerprint sensing of trace analytes, and has potential applications in active spatial light modulators, slow light devices and dynamic imaging equipments.

Single and dual-band electromagnetically induced transparency in a strongly near field coupled planar toroidal terahertz metamaterial

We demonstrate electromagnetically induced transparency (EIT) in a strongly coupled planar terahertz toroidal metasurface through simulations, theory and experiments. The near-field interaction between a unique toroidal resonator enveloped by a 2-arc resonator leads to the excitation of EIT in the metamaterial. A modulation in the EIT response of the metasurface is observed by increasing the gap between the resonators, resulting a redshift of the transmission response. Furthermore, we report the excitation of dual-band EIT in the metasurface by introducing an asymmetry in the 2-arc resonator. A theoretical oscillator model is used to validate the experimental EIT effect, and to gain an in-depth understanding of the coupling mechanism of the proposed geometry. Metasurfaces were fabricated and characterized for each individual resonator geometry as well as the geometries corresponding to the single-EIT design and the dual-EIT design. This study can contribute to the development of slow light devices and ultrafast switches in the terahertz regime.

Multiple Brillouin Zone Winding of Topological Chiral Edge States for Slow Light Applications.

Photonic Chern insulators are known for their topological chiral edge states (CESs), whose absolute existence is determined by the bulk band topology, but concrete dispersion can be engineered to exhibit various properties. For example, the previous theory suggested that the edge dispersion can wind many times around the Brillouin zone to slow down light, which can potentially overcome fundamental limitations in conventional slow-light devices: narrow bandwidth and keen sensitivity to fabrication imperfection. Here, we report the first experimental demonstration of this idea, achieved by coupling CESs with resonance-induced nearly flat bands. We show that the backscattering-immune hybridized CESs are significantly slowed down over a relatively broad bandwidth. Our work thus paves an avenue to broadband topological slow-light devices.

Monolayer actively tunable dual-frequency switch based on photosensitive silicon metamaterial

We propose a monolayer actively tunable dual-frequency switch in the terahertz (THz) range based on photosensitive silicon (PSi) metamaterial. The designed unit cell consists of hollow cross-shaped slots and four L-shaped slots made of a perfect electric conductor (PEC), with PSi embedded in both the cross-shaped and four L-shaped slots of identical dimensions. The PEC serves as the dielectric substrate. By varying the intensity of the pump beam to adjust the conductivity of the PSi, tuning of the transmittance at the resonant frequencies of the entire structure is achieved, enabling the switch to function in both ON and OFF states. Under vertical incidence of THz waves in the range of 1 THz to 3 THz, in the absence of pump beam, the PSi is in an insulating state with a conductivity of approximately 1 S/m. The proposed terahertz dual-frequency switch is in the ON state, with transmittances of 97.0% at the first resonance frequency (f1=1.736THz) and 98.3% at the second resonance frequency (f2=2.176THz), and group delays of 4.397 ps and 2.540 ps, respectively. When the pump beam intensity is 294.6 μj/cm2, the PSi is in a metallic state with a conductivity of approximately 1 × 105 S/m. The switch is in the OFF state, with zero transmittance in the range of 1 THz to 3 THz and a group delay of 0.327 ps. The calculated modulation degrees of amplitude at f1 and f2 for this terahertz dual-frequency switch are both 100%, demonstrating a high-performance switch. The two resonant frequencies f1 and f2 of the terahertz dual-frequency switch are generated by weakly coupled superposition between the embedded cross-shaped and four L-shaped PSi resonators (CSPR and FLSPR), exhibiting polarization-insensitive characteristics under vertical incidence of THz waves. We believe that this compact structure of terahertz metamaterial dual-frequency switch holds great application prospects in terahertz filtering, slow light devices, terahertz modulation, and the future 6G communication field.

A 2-bit graphene encoder based on the plasmon-induced transparency effect and its sensing characteristics

A 2-bit encoder based on the plasmon-induced transparency (PIT) effect was proposed and investigated in the range from 2 to 7 THz. The Lorentz oscillation coupling model was utilized to confirm the simulation. By tuning the Fermi levels of cross1 and cross2, the 2-bit encoder was achieved. And the minimum MD was 94.73 %, the minimum ER was 12.77 dB, and the maximum IL was 0.32 dB. As a sensor, the structure had a sensitivity of up to 2.33 THz/RIU. In addition, due to the insensitivities to incidence angle and polarization angle, the encoder could be utilized to complex environments. Therefore, these results reveals that our work is significant in terahertz encoders, optical switches, sensors, slow light devices, and modulators.

Versatile terahertz metasurface: dynamic switching between electromagnetically induced transparency and perfect absorption

This paper introduces a versatile metasurface based on vanadium dioxide (VO2) and graphene that seamlessly transitions between electromagnetically induced transparency (EIT) and multi-band absorption through VO2’s phase change property. When VO2 is in a dielectric state, the device can generate EIT. This configuration allows dynamic tuning of the central frequency by adjusting the graphene’s Fermi levels (E f ), achieving a remarkable group delay of 1.42 ps. When VO2 is in a metallic state, the structure facilitates a Fabry–Perot resonance between the VO2 layer at the bottom and the graphene layer at the top, leading to exceptional light absorption. Specifically, absorptivity of 99.8% and 99.4% is achieved at 1.66 THz and 2.87 THz, respectively. In addition, these two resonance peaks can also be dynamically adjusted by modulating E f . Furthermore, the device serves as a highly sensitive sensor with sensitivity up to 0.65 THz/RIU. Notably, both absorption and EIT modes are polarization-insensitive and exhibit tolerance to a wide range of incidence angles. Consequently, the proposed device holds significant promise across various applications within the electromagnetic field, including tunable devices, absorbers, sensors, slow-light devices, and so on.

Graphene metamaterials-based plasmon-induced terahertz modulator for high-performance multiband filtering and slow light applications.

We proposed multilayered graphene (Gr)-based surface plasmon resonance-induced high-performance terahertz (THz) modulators with tunable resonance frequencies. Previously reported Gr metamaterials-based THz plasmonic modulators had small group delay, low extinction ratio (ER), and difficult-to-tune resonant frequency without changing structural parameters in the THz range. A comprehensive investigation employing the finite-difference time-domain (FDTD) simulation technique revealed high group delay, broad tunability independent of structural parameters, and large ER for our proposed quadband and pentaband plasmonic modulators. We obtained tunable group delays with a maximum of 1.02 ps and 1.41 ps for our proposed quadband and pentaband plasmonic modulators, respectively, which are substantially greater compared to previously reported Gr-based metamaterial structures. The maximum ER of 22.3 dB was obtained, which was substantially high compared to previous reports. Our proposed modulators were sensitive to the polarization angle of incident light; therefore, the transmittance at resonant frequencies was increased while the polarization angle varied from 0° to 180°. These high-performance plasmonic modulators have emerging potential for the design of optical buffers, slow light devices, multistop band filters, integrated photonic circuits, and various optoelectronic systems.

SOI Based metasurface for broadband perfect reflection in visible spectrum

We propose modeling and design of a low-loss all-dielectric metasurface (DM), comprised of Silicon on Insulator (SiO2) substrate to demonstrate a perfect reflector in the visible spectrum. The proposed metasurface unit cell consists of V and W shapes arranged in a mirror image configuration, with nanometre-sized gaps (g) between them. A narrow peak with a nearly 100% reflectance and a broad perfect reflectance spectrum is observed within the visible region (400–700 nm) of the electromagnetic spectrum. The effective electromagnetic parameters were also analyzed for electric and magnetic dipole resonance. The electric and magnetic field distributions at the resonant wavelength were also analyzed for the proposed structure. By altering the gap region ‘g’, the thickness of the dielectric Silica layer (ts ), and the Si resonator (t m), the proposed structure exhibits tunable characteristics. We have successfully illustrated the consistent position of the scattering parameter’s response, regardless of the structure’s rotation, concluding the homogeneity of the designed structure across the entire visible spectrum. The all-DM exhibits a unique combination of features, including a distinct and wide reflectance spectrum as well as a tuned and enhanced electric field which makes it an ideal platform for the applications in filters, color printing, low-loss slow-light devices, and nonlinear optics.

Analog electromagnetic induced transparency of T-type Si-based metamaterial and its applications

A T-type silicon-based metamaterial is proposed, which realizes electromagnetically induced transparency (EIT) by using the asymmetry of its structure. This dielectric metamaterial exhibits an ultranarrow EIT transparent window, with a transmittance of 91% and a Q factor of 180. Measuring its sensing performance, a refractive index sensor with a sensitivity of 466 nm RIU−1 is obtained. In addition, by analyzing the dispersion characteristics of the structure, the maximum group delay value is 2.84 ps, and the corresponding group refractive index is 4250. Therefore, dielectric metamaterials with this structure are expected to be used in refractive index sensing and slow light devices.

Experimental validation of group delay in a multi-window electromagnetically induced transparency metasurface

Metasurface analogs of electromagnetically induced transparency (EIT) are attracting sustaining attention due to their ability to maintain transparency windows accompanied by extreme dispersion of propagating waves, which are important for slow light devices and highly sensitive optical sensors. In this paper, we study theoretically, numerically, and experimentally the conditions for the existence of multi-band transparency windows in the metasurface supported by the interaction of dipole modes in an asymmetric unit cell. The unit cell is composed of a single bright resonator and several dark resonators made in the form of rectangular metal patches. The manifestation of EIT is studied for different metasurface configurations by varying the number and positions of resonators used within the unit cell. To validate the slow-down effect caused by EIT, a prototype of the metasurface is fabricated and tested, providing a measurement of the group delay and bandwidth-delay product features. The obtained results clearly confirm the presence of four EIT-like transparency windows in the metasurface transmission spectra originating from the coupling between either quasi-TE or quasi-TM modes of the resonators.