Slonczewski-like Torque Research Articles

Tuning Slonczewski-like torque and Dzyaloshinskii–Moriya interaction by inserting a Pt spacer layer in Ta/CoFeB/MgO structures

Slonczewski-like torque and the Dzyaloshinskii–Moriya interaction (DMI) are important factors in current-induced magnetization switching and domain-wall motion seen in ferromagnetic metal (FM)/heavy metal (HM) structures. We demonstrate the tuning of both factors by inserting a thin Pt layer between Ta and CoFeB in the Ta/CoFeB/MgO structures. The results suggest that the Slonczewski-like torque and DMI decreases with increasing Pt thickness (tPt) in the range 0–1 nm. In consequence, the critical switching current density from the induced spin-orbit torque (SOT) increases whereas the required in-plane field for deterministic switching decreases. The sign of the DMI reverses around tPt = 1 nm, confirming that D has the opposite sign at the Ta/CoFeB and Pt/CoFeB interfaces; but its intensity saturates at tPt = 3 nm, suggesting that several interface monolayers may contribute to the DMI. Our results verifies that a thin HM interlayer may be a suitable route to tailor the SOTs and DMI at the HM/FM interface, as well as the current-induced magnetization switching in these structures.

Spin-orbit torques in high-resistivity-W/CoFeB/MgO

Magnetic heterostructures consisting of high-resistivity (238 ± 5 µΩ cm)-W/CoFeB/MgO are prepared by sputtering and their spin-orbit torques are evaluated as a function of W thickness through an extended harmonic measurement. W thickness dependence of the spin-orbit torque with the Slonczewski-like symmetry is well described by the drift-diffusion model with an efficiency parameter, the so-called effective spin Hall angle, of −0.62 ± 0.03. In contrast, the field-like spin-orbit torque is one order of magnitude smaller than the Slonczewski-like torque and shows no appreciable dependence on the W thickness, suggesting a different origin from the Slonczewski-like torque. The results indicate that high-resistivity W is promising for low-current and reliable spin-orbit torque-controlled devices.

Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO

We study the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis. The miniaturization of the device from micrometer-sized wire to 80-nm dot results in the increase of the threshold current density Jth by one order, whereas Jth increases only slightly with further reducing the device size down to 30 nm. No significant increase in Jth is seen, as the current pulse width decreases from 100 ms down to 3 ns. We reveal that the switching in devices at reduced size is reasonably well explained by the macrospin model, in which the effects of both the Slonczewski-like torque and field-like torque are included.

Large voltage-induced modification of spin-orbit torques in Pt/Co/GdOx

We report on large modifications of current-induced spin-orbit torques in a gated Pt/Co/Gd-oxide microstrip due to voltage-driven O2− migration. The Slonczewski-like and field-like torques are quantified using a low-frequency harmonic technique based on the polar magneto-optical Kerr effect. Voltage-induced oxidation of Co enhances the Slonczewski-like torque by as much as an order of magnitude and simultaneously reduces the anisotropy energy barrier by a factor of ∼5. Such magneto-ionic tuning of interfacial spin-orbit effects may significantly enhance the efficiency of magnetization switching and provide additional degrees of freedom in spintronic devices.

Enhanced spin-orbit torques in Pt/Co/Ta heterostructures

Spin-orbit torques (SOTs) are studied in perpendicularly magnetized ultrathin Co films sandwiched between two heavy metals, Pt and Ta. A significant enhancement of the Slonczewski-like torque is achieved by placing dissimilar metals with opposite spin Hall angles on opposite sides of the ferromagnet. SOTs were characterized through harmonic measurements and the contribution by the Ta overlayer was isolated by systematically varying its thickness. An effective spin Hall angle of up to 34% is observed, along with a sizable field-like torque that increases with increasing Ta layer thickness. Current-induced switching measurements reveal a corresponding increase in switching efficiency, suggesting that by engineering both interfaces in trilayer structures, the SOTs can be significantly improved.

Current induced domain wall dynamics in the presence of spin orbit torques

Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the associated DW velocity depend on the relative values of the field like torque (FLT) and the Slonczewski like torques (SLT). The results are well explained by a collective coordinate model which is used to draw a phase diagram of the DW dynamics as a function of the FLT and the SLT. We show that a large increase in the DW velocity can be reached by a proper tuning of both torques.

Quantifying interface and bulk contributions to spin–orbit torque in magnetic bilayers

Spin-orbit interaction-driven phenomena such as the spin Hall and Rashba effect in ferromagnetic/heavy metal bilayers enables efficient manipulation of the magnetization via electric current. However, the underlying mechanism for the spin-orbit interaction-driven phenomena remains unsettled. Here we develop a sensitive spin-orbit torque magnetometer based on the magneto-optic Kerr effect that measures the spin-orbit torque vectors for cobalt iron boron/platinum bilayers over a wide thickness range. We observe that the Slonczewski-like torque inversely scales with the ferromagnet thickness, and the field-like torque has a threshold effect that appears only when the ferromagnetic layer is thinner than 1 nm. Through a thickness-dependence study with an additional copper insertion layer at the interface, we conclude that the dominant mechanism for the spin-orbit interaction-driven phenomena in this system is the spin Hall effect. However, there is also a distinct interface contribution, which may be because of the Rashba effect.