Antiferromagnetic Skyrmion Research Articles

Antiferromagnetic skyrmion dynamics in stepped geometry for various applications

Antiferromagnetic skyrmion dynamics in stepped geometry for various applications

Stability and dynamics of synthetic antiferromagnetic skyrmions in asymmetric multilayers

Stability and dynamics of synthetic antiferromagnetic skyrmions in asymmetric multilayers

Topological charge and spin Hall effects due to skyrmions in canted antiferromagnets

Topological charge and spin Hall effects due to skyrmions in canted antiferromagnets

Elongated antiferromagnetic skyrmion in two-dimensional RuF4

Elongated antiferromagnetic skyrmion in two-dimensional RuF4

Energy-efficient synthetic antiferromagnetic skyrmion-based artificial neuronal device

Magnetic skyrmions offer unique characteristics such as nanoscale size, particle-like behavior, topological stability, and low depinning current density. These properties make them promising candidates for next-generation spintronics-based memory and neuromorphic computing. However, one of their distinctive features is their tendency to deviate from the direction of the applied driving force that may lead to the skyrmion annihilation at the edge of nanotrack during skyrmion motion, known as the skyrmion Hall effect (SkHE). To overcome this problem, synthetic antiferromagnetic (SAF) skyrmions that having bilayer coupling effect allows them to follow a straight path by nullifying SkHE making them alternative for ferromagnetic (FM) counterpart. This study proposes an integrate-and-fire (IF) artificial neuron model based on SAF skyrmions with asymmetric wedge-shaped nanotrack having self-sustainability of skyrmion numbers at the device window. The model leverages inter-skyrmion repulsion to replicate the IF mechanism of biological neuron. The device threshold, determined by the maximum number of pinned skyrmions at the device window, can be adjusted by tuning the current density applied to the nanotrack. Neuronal spikes occur when initial skyrmion reaches the detection unit after surpassing the device window by the accumulation of repulsive force that result in reduction of the device’s contriving current results to design of high energy efficient for neuromorphic computing. Furthermore, work implements a binarized neuronal network accelerator using proposed IF neuron and SAF-SOT-MRAM based synaptic devices for national institute of standards and technology database image classification. The presented approach achieves significantly higher energy efficiency compared to existing technologies like SRAM and STT-MRAM, with improvements of 2.31x and 1.36x, respectively. The presented accelerator achieves 1.42x and 1.07x higher throughput efficiency per Watt as compared to conventional SRAM and STT-MRAM based designs.

Current-driven dynamics of antiferromagnetic skyrmions: from skyrmion Hall effects to hybrid inter-skyrmion scattering

Antiferromagnetic (AFM) skyrmions have emerged as a highly promising avenue in the realm of spintronics, particularly for the development of advanced racetrack memory devices. A distinguishing feature of AFM skyrmions is the cancellation of their net topological charge, leading to an anticipated absence of the skyrmion Hall effect (SkHE). Here, we unveil that the latter is finite under the influence of spin-transfer torque, depending on the direction of the injected current impinging on intrinsic AFM skyrmions emerging in Cr/Pd/Fe trilayer on Ir(111) surface. Hinging on first principles combined with atomistic spin dynamics simulations, we identify the origin of the SkHE, which is due to the ellipticity of the skyrmions, and we uncover that FM skyrmions in the underlying Fe layer act as effective traps for AFM skyrmions, confining them and affecting their velocity. These findings hold significant promise for spintronic applications, the design of multi-purpose skyrmion tracks while advancing our understanding of AFM–FM skyrmion interactions and hybrid soliton dynamics in heterostructures.

Manipulation of Synthetic Antiferromagnetic Skyrmion by Reduced Voltage via Design of Double Interface Structure

Manipulation of Synthetic Antiferromagnetic Skyrmion by Reduced Voltage via Design of Double Interface Structure

Alloying Driven Antiferromagnetic Skyrmions on NiPS3 Monolayer: A First-Principles Calculation.

Topological magnetic states are promising information carriers for ultrahigh-density and high-efficiency magnetic storage. Recent advances in two-dimensional (2D) magnets provide powerful platforms for stabilizing various nanometer-size topological spin textures within a wide range of magnetic field and temperature. However, non-centrosymmetric 2D magnets with broken inversion symmetry are scarce in nature, making direct observations of the chiral spin structure difficult, especially for antiferromagnetic (AFM) skyrmions. In this work, it is theoretically predicted that intrinsic AFM skyrmions can be easily triggered in XY-type honeycomb magnet NiPS3 monolayer by alloying of Cr atoms, due to the presence of a sizable Dzyaloshinskii-Moriya interaction. More interestingly, the diameter of the AFM skyrmions in Ni3/4Cr1/4PS3 decreases from 12 to 4.4nm as the external magnetic field increases and the skyrmion phases remain stable up to an external magnetic field of 4 T. These results highlight an effective strategy to generate and modulate the topological spin texture in 2D magnets by alloying with magnetic element.

Topological aspects of multi-k antiferromagnetism in cubic rare-earth compounds

We advertise rare-earth intermetallics with high-symmetry crystal structures and competing interactions as a possible materials platform hosting spin structures with non-trivial topological properties. Focusing on the series of cubic RCu compounds, where R = Ho, Er, Tm, the bulk properties of these systems display exceptionally rich magnetic phase diagrams hosting an abundance of different phase pockets characteristic of antiferromagnetic order in the presence of delicately balanced interactions. The electrical transport properties exhibit large anomalous contributions suggestive of topologically non-trivial winding in the electronic and magnetic structures. Neutron diffraction identifies spontaneous long-range magnetic order in terms of commensurate and incommensurate variations of (ππ0) antiferromagnetism with the possibility for various multi- k configurations. Motivated by general trends in these materials, we discuss the possible existence of topologically non-trivial winding in real and reciprocal space in the class of RCu compounds including antiferromagnetic skyrmion lattices. Putatively bringing together different limits of non-trivial topological winding in the same material, the combination of properties in RCu systems promises access to advanced functionalities.

In-plane strain-induced structural phase transition and interlayer antiferromagnetic skyrmions in 2H-VSe2 bilayer

The sliding and manipulation of interlayer magnetism and magnetic topological textures in two-dimensional (2D) layered materials have recently received tremendous attention. In this work, using first-principles calculations, we report a structural phase transition induced by manipulating the interlayer distance using an in-plane biaxial strain in a 2H-VSe2 bilayer. This structural phase transition is accompanied by a semiconductor-to-metal transition, in-plane-to-out-of-plane magnetization switching, and a reversal in the chirality of the Dzyaloshinskii–Moriya interaction (DMI). The binding strength of the interlayer Se2–Se3 atoms and charge density difference can serve as indicators for this structural phase transition. Furthermore, the interlayer distance of Se2–Se3 atoms can be employed as a descriptor that perfectly characterizes the degree of symmetry breaking and the magnitude of the DMI resulting from the broken spatial symmetry due to sliding. In addition, using atomistic simulations, we identify magnetic topological textures such as interlayer antiferromagnetic (AFM) frustrated bimerons and interlayer AFM skyrmions with strain. These results are beneficial for understanding and manipulating the interlayer properties of 2D layered materials through in-plane biaxial strain. In addition, the interlayer AFM frustrated bimerons and skyrmions in bilayer VSe2, which can suppress the skyrmion Hall effect due to the canceled Magnus forces in the top and bottom layers, highlight the promising applications of VSe2 in next-generation information storage devices.

Creation of Room-Temperature Sub-100 nm Antiferromagnetic Skyrmions in an Antiferromagnet IrMn through Interfacial Exchange Coupling.

Antiferromagnetic (AFM) skyrmions are magnetic vortices composed of antiparallell-aligned neighboring spins. In stark contrast to conventional skyrmions based on ferromagnetic order, AFM skyrmions have vanished stray fields, higher response frequencies, and rectified translational motion driven by an external force. Therefore, AFM skyrmions promise highly efficient spintronics devices with high bit mobility and density. Nevertheless, the experimental realization of intrinsic AFM skyrmions remains elusive. Here, we show that AFM skyrmions can be nucleated via interfacial exchange coupling at the surface of a room-temperature AFM material, IrMn, exploiting the particular response from uncompensated moments to the thermal annealing and imprinting effects. Further systematic magnetic characterizations validate the existence of such an AFM order at the IrMn/CoFeB interfaces. Such AFM skyrmions have a typical size of 100 nm, which presents pronounced robustness against field and temperature. Our work opens new pathways for magnetic topological devices based on AFM skyrmions.

Magnon thermal Hall effect via emergent SU(3) flux on the antiferromagnetic skyrmion lattice

Complexity of quantum phases of matter is often understood theoretically by using gauge structures, as is recognized by the Z2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\mathbb{Z}}}_{2}$$\\end{document} and U(1) gauge theory description of spin liquids in frustrated magnets. Anomalous Hall effect of conducting electrons can intrinsically arise from a U(1) gauge expressing the spatial modulation of ferromagnetic moments or from an SU(2) gauge representing the spin-orbit coupling effect. Similarly, in insulating ferro and antiferromagnets, the magnon contribution to anomalous transports is explained in terms of U(1) and SU(2) fluxes present in the ordered magnetic structure. Here, we report thermal Hall measurements of MnSc2S4 in an applied field up to 14 T, for which we consider an emergent higher rank SU(3) flux, controlling the magnon transport. The thermal Hall coefficient takes a substantial value when the material enters a three-sublattice antiferromagnetic skyrmion phase, which is in agreement with the linear spin-wave theory. In our description, magnons are dressed with SU(3) gauge field, which is a mixture of three species of U(1) gauge fields originating from the slowly varying magnetic moments on these sublattices.

Skyrmion-deriven topological spin and charge Hall effects in diffusive antiferromagnetic thin films

We investigate topological Hall effects in a metallic antiferromagnetic (AFM) thin film and/or at the interface of an AFM insulator–normal metal bilayer with a single skyrmion in the diffusive regime. To determine the spin- and charge Hall currents, we employed a Boltzmann kinetic equation with both spin-dependent and spin-flip scatterings. The interaction between conduction electrons and static skyrmions is included in the Boltzmann equation via the corresponding emergent magnetic field arising from the skyrmion texture. We compute intrinsic and extrinsic contributions to the topological spin Hall effect and spin accumulation, induced by an AFM skyrmion. We show that although the spin Hall current vanishes rapidly outside the skyrmion, the spin accumulation can be finite at the edges far from the skyrmion, provided the spin diffusion length is longer than the skyrmion radius. In addition, We show that in the presence of a spin-dependent relaxation time, the topological charge Hall effect is finite and we determine the corresponding Hall voltage. Our results may help to explore antiferromagnetic skyrmions by electrical means in real materials.

Skyrmion motion under temperature gradient and application in logic devices

Under the presence of temperature gradient (TG) on a nanotrack, it is necessary to investigate the skyrmion dynamics in various magnetic systems under the combined effect of forces due to magnonic spin transfer torque thermal STT (), entropic difference as well as thermal induced dipolar field (DF). Hence, in this work, the dynamics of skyrmions in ferromagnets (FM), synthetic antiferromagnets (SAF), and antiferromagnets (AFM) have been studied under different TGs and damping constants (). It is observed that plays a major role in deciding the direction of skyrmion motion either towards the hotter or colder side in different magnetic structures. Later, FM skyrmion based logic device is proposed that consists of a cross-coupled nanotrack, where the skyrmions on horizontal and vertical nanotrack are controlled by exploiting TG and electrical STT (eSTT), respectively by taking the advantages of thermal induced skyrmion Hall effect (SkHE). The proposed device performs AND and OR logic functionalities simultaneously, when the applied current density is Moreover, the proposed device is also able to exhibit the half adder functionality by tuning the applied current density to The total energy consumption for AND and OR logic operation and half adder are 33.63 fJ and 25.06 fJ, respectively. This paves the way for the development of energy-efficient logic devices with ultra-high storage density.

Designing Layered 2D Skyrmion Lattices in Moiré Magnetic Heterostructures

AbstractSkyrmions are promising for the next generation of spintronic and magnonic devices, but their zero‐field stability and controlled nucleation through chiral interactions remain challenging. In this theoretical study, the potential of moiré magnetic heterostructures to generate ordered skyrmion lattices from the stacking‐dependent magnetism in 2D magnets is explored. Heterostructures formed by twisting ultrathin CrBr3 films on top of CrI3 substrates are considered, assuming a moderate interfacial Dzyaloshinskii–Moriya interaction. At large moiré periodicity and appropriate substrate thickness, a moiré skyrmion lattice emerges in the interfacial CrBr3 layer due to the weaker exchange interactions in CrBr3 compared to CrI3. This lattice is then projected to the remaining layers of the CrBr3 film via chiral interlayer exchange fields. By varying the pristine stacking configurations within the ultrathin CrBr3 film, layered ferromagnetic and antiferromagnetic skyrmion lattices without the need for a permanent magnetic field are realized. These findings suggest the possibility of creating ordered skyrmion lattices in moiré magnetic heterostructures, enabling further exploration of their fundamental properties and technological relevance.

Skyrmions in van der Waals centrosymmetric materials with Dzyaloshinskii–Moriya interactions

Skyrmions can appear in non-centrosymmetric materials because of non-vanishing Dzyaloshinskii–Moriya interactions (DMIs). We investigate the magnetic properties of rhombohedral MX3 (M: V, Cr, Mn, Fe; X: Cl, Br, I) van der Waals materials with centrosymmetric lattices by combining first-principle calculations and Monte Carlo simulations. We determine that the Dzyaloshinskii–Moriya vector acting between the second nearest neighbor sites of the intralayer is non-zero and large in MX3, owing to the breaking of the local inversion symmetry. Large DMIs cause nanoscale magnetic vortices, i.e. that is, skyrmions. We observe both conventional skyrmions in CrCl3 and VCl3 and antiferromagnetic skyrmions in FeCl3 and merons in MnCl3. Furthermore, the skyrmions in CrCl3 and VCl3 have different helicities, indicating the possibility of controlling the helicity by electron/hole doping in MX3 materials. Van der Waals materials have high degrees of freedom in heterostructures and twisted structures, demonstrating promising potential as skyrmion materials.

Identifying and Exploring Synthetic Antiferromagnetic Skyrmions

AbstractSynthetic antiferromagnetic (SAF) skyrmions are emerging as novel information carriers due to their high mobility and lack of a skyrmion Hall effect. However, distinguishing SAF skyrmions from their ferromagnetic counterparts using imaging techniques like magneto‐optical microscopy remains challenging. While the suppressed intrinsic skyrmion Hall effect (SkHE) has been commonly used to identify SAF skyrmions, it is important to note that other factors such as defect pinning and dipolar interaction can also lead to a suppressed SkHE. Therefore, there is an urgent need for a universal identification method that can reliably differentiate SAF skyrmions from ferromagnetic ones. In this study, the generation of a SAF skyrmion within a standard SAF stack is demonstrated and its motion with almost no SkHE is investigated. Furthermore, a universal identification method is proposed wherein the application of an out‐of‐plane field allows the SAF skyrmion to be decoupled into two domains, which can either expand or contract with the application of an electric current. By expediting the development of a reliable means of identifying SAF skyrmions, these findings will accelerate the realization of practical applications based on these unique information carriers.

Skyrmion size-tuning in two-dimensional antiferromagnetic monolayers by applying local spin-polarized current-induced spin-transfer torque

Antiferromagnetic (AFM) skyrmions exhibit a variety of outstanding features, including stability, non-volatility, processability, and resistance to the skyrmion Hall effect (SkHE). However, AFM skyrmions are insensitive to an external magnetic field, posing a major challenge for controlling their size. Tuning the key magnetic properties in AFM thin films is a feasible method for controlling skyrmion size, but it may also adversely affect other magnetic characteristics, such as the velocity and stability of the skyrmion, especially for small skyrmion sizes. In this study, we have investigated the size controllability of AFM skyrmions in the presence of the Dzyaloshinskii–Moriya interaction (DMI), applying a pure spin current in a bilayer structure consisting of a 2D AFM nanodisk placed over a thin coating of heavy metal (HM). The method relies on destabilizing the AFM lattice by targeting the 2D AFM nanodisk in a specific area defined by the diameter (dtr) using spin-polarized current-perpendicular-to-plane (CPP), causing a localized magnetization precession induced by spin-transfer torque (STT). As a result, a series of AFM skyrmions of different radii was stabilized depending on the diameter used without resorting to re-tuning the magnetic characteristics of the material. Moreover, we have found that for strong DMI, robust AFM skyrmions of small sizes can also be generated by adopting small diameters. Besides, the impact of spin current and nucleation time has been examined, and it was found that adjusting these parameters does not help to fine-tune the skyrmion size as much as it affects the nucleation process. Finally, we demonstrate how this method may be used to adjust both the radius and site of the skyrmion in the 2D AFM monolayer by simultaneously targeting different locations using pure spin currents. This method allows us to tune the AFM skyrmion size and to directly address the target skyrmion without disturbing the surrounding magnetic environment. Therefore, our results may pave the way for high-functional spintronics applications based on AFM skyrmions.

A spin model for intrinsic antiferromagnetic skyrmions on a triangular lattice

Skyrmions are prospected as the potential future of data storage due to their topologically protected spin structures. However, traditional ferromagnetic (FM) skyrmions experience deflection when driven with an electric current, hindering their usage in spintronics. Antiferromagnetic (AFM) skyrmions, consisting of two FM solitons coupled antiferromagnetically, are predicted to have zero Magnus force, making them promising candidates for spintronic racetrack memories. Currently, they have been stabilized in synthetic AFM structures, i.e., multilayers hosting FM skyrmions, which couple antiferromagnetically through a non-magnetic spacer, while recent first-principle simulations predict their emergence in an intrinsic form, within a row-wise AFM single monolayer of Cr deposited on a PdFe bilayer grown on Ir (111) surfaces. The latter material forms a triangular lattice, where single and interlinked AFM skyrmions can be stabilized. Here, we explore the minimal Heisenberg model, enabling the occurrence of such AFM solitons and the underlying phase diagrams by accounting for the interplay between the Dzyaloshinskii–Moriya and Heisenberg exchange interactions, as well as the magnetic anisotropy and impact of the magnetic field. By providing the fundamental basis to identify and understand the behavior of intrinsic AFM skyrmions, we anticipate our model to become a powerful tool for exploring and designing new topological magnetic materials to conceptualize devices for AFM spintronics.

Dzyaloshinskii-Moriya interaction and skyrmions in antiferromagnetic-based heterostructures

The Dzyaloshinskii-Moriya interaction (DMI), an antisymmetric exchange format, plays a key role in the formation of chiral magnetic states. Here, a systematic study on the magnetic properties, including DMI, Heisenberg exchange coupling, and magnetocrystalline anisotropy of IrMn (PtMn) and MgO/IrMn (MgO/PtMn) stacks were carried out by first-principles calculation. Furthermore, the effect of DMI on topological magnetism in the above structures was investigated by micromagnetic simulations based on magnetic parameters from first-principles calculation. A large DMI and microscopic mechanisms of DMI at MgO/IrMn interface were unveiled. This interfacial DMI originates from the dominant contribution from the Ir layer and the orbital hybridization with Ir 3d orbit. The micromagnetic simulation indicates that the labyrinth domains with chiral domain walls and antiferromagnetic skyrmions appear for MgO/IrMn heterostructure, and isolated antiferromagnetic skyrmions are induced for MgO/PtMn heterostructure without any external magnetic fields. Our results may open up a new route to generate the magnetic antiferromagnetic skyrmions at oxide/antiferromagnetic interfaces, which can be an ideal information carrier.