In this paper, we investigate the relationship between GaN exciton energy and temperature by using high-quality, strain-free GaN epilayers. Traditional models, such as Varshni’s model and the Bose–Einstein model, are primarily based on empirical fitting and give little or no consideration to electron–phonon interactions, which prevents them from accurately calculating GaN exciton energy over a wide temperature range. Considering the interaction of electrons and phonons, we use singular functions, linear functions and power functions to express the phonon density of GaN, and then 2BE, singular-linear, power-law-delta, and power-law-v models are proposed. All of them provide results that are more consistent with actual measurements compared to traditional models. Among them, the singular-linear model summarizes the contributions of acoustic and optical phonons. The error associated with the singular-linear model is smaller than that of the 1BE and Varshni models across nearly the entire temperature range. Therefore, the singular-linear model is a better choice.
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