Single-walled Nanotube Transistor Research Articles

Diameter-dependent analytical model for light spot movement in carbon nanotube array transistors

We present a rigorous analytical model for the movement of light spot emitted in single-wall nanotube transistors (SWNTs) including the dependence of this movement on tube diameter. Since the rate of change of light spot movement with gate bias is a sensitive function of the tube diameter, the model can be used as an in situ nondestructive tool to probe the electrically relevant diameter distribution in SWNT arrays and thereby could complement traditional indirect techniques like Raman spectroscopy and atomic force microscopy. Establishing such a diameter distribution has broad implications regarding the performance/integration of SWNT for potential applications in emerging carbon electronics.