Recently, research on two-dimensional layered materials is progressing rapidly. Transition metal dichalcogenides (TMDs) show bandgap, which is bringing high expectations for a variety of applications such as electronics and optoelectronics. Mo(1-x)W x S2 is an alloy semiconductor of MoS2 and WS2, two of the most representative TMD materials, and it is possible to modulate physical properties such as optical characteristics by changing the W concentration x [1-3]. In this study, we performed a combinatorial film deposition in which the W concentration changes from 0 to 100% within one sample using RF magnetron sputtering method [4]. Since the combinatorial film deposition can form a continuous compositional gradient in the sample, continuous modulation of physical properties is expected. There have been different reports on the fabrication of the alloy with chemical vapor transport followed by exfoliation, or chemical vapor deposition [5]. However, in this study single-step fabrication of the alloy with sputtering was achieved. The physical properties such as the band structure of the fabricated sample were investigated.MoS2 and WS2 targets were used for the fabrication of the alloy. The substrate temperature was 300 °C, Ar pressure was 0.3 Pa, and the RF power applied to the MoS2 and WS2 targets were 80 W and 50 W, respectively. The film thickness was adjusted to approximately 100 nm by controlling the deposition time. Surface oxidized Si was used as the substrate. A schematic diagram of the sample is shown in Fig. 1. Using X-ray photoelectron spectroscopy (XPS) for quantitative analysis of the sample, the W concentration x and the sulfur to metal ratio S / (Mo + W) were calculated by determining the peak area ratios of Mo 3d, W 4f, and S 2p. In addition, spectroscopic ellipsometry analysis was carried out to calculate the bandgap for each concentration region.Figure 2 shows the in-plane composition distribution determined by line measurement with XPS. From Fig. 2, it can be seen that the W concentration changes almost linearly, and the stoichiometric ratio was achieved. The linearly changing composition gradient allowed us to accurately select the composition of the alloy for the other evaluation. The bandgap with respect to W concentration using spectroscopic ellipsometry is shown in Fig. 3. It was confirmed that the band gap can be controlled by changing the W concentration. In addition, the change was accompanied by bowing which is a unique behavior often observed in the alloy materials. Figure 4 shows the band alignment of different W concentration x determined by using XPS and spectroscopic ellipsometry. From this result, it was found that the band structure can be controlled according to the requirements of the devices. We believe that this opens new opportunity for the TMD in electronic device applications.This work was partly supported by JST CREST Number JPMJCR16F4, Japan. This work was also partly supported by JSPS KAKENHI Grant Number 18J22879.REFERENCES Y. Chen, J. Xi, D. O. Dumcenco, Z. Liu, K. Suenaga, D. Wang, Z. Shuai, Y. S. Huang, and L. Xie, ACS Nano 7, 4610 (2013).H. -P. Komsa, and A. V. Krasheninnikov, J. Phys. Chem. Lett. 3, 3652 ( 2012).P. M. Jahani, S. T., H. Beitollahi, S. Mohammadi, and M. R. Aflatoonian, Research on Chemical Intermediates 46, 837(2020).S. Noda, H. Sugime, T. Osawa, Y. Tsuji, S. Chiashi, Y. Murakami, and S. Maruyama. Carbon 44, 8 (2006).Z. Wang, P. Liu, Y. Ito, S. Ning, Y. Tan, T. Fujita, A. Hirata, and M. Chen. Sci. Reports 6, 21536 (2016). Figure 1