Single-photon Avalanche Diode Research Articles

High Speed and High Sensitivity InGaAs/InAlAs Single Photon Avalanche Diodes for Photon Counting Communication

A planar InGaAs/InAlAs single photon avalanche diode (SPAD) was fabricated and comprehensively characterized. At room temperature, the dark count rate is 3.1 MHz at 10.4% photon detection efficiency. The corresponding noise-equivalent power of 3.07 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−15</sup> W/Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> is achieved, which is the lowest value among reported InGaAs/InAlAs SPADs operated at room temperature. Moreover, it is the first time to report an InGaAs/InAlAs SPAD driven by a sine wave gate (SWG) quenching circuit as a receiver in the photon counting communication system. For achieving high-bit-rate transmission with high sensitivity, a high-frequency (1.8 GHz) SWG quenching circuit is developed and the time jitter for the system is reduced to 53 ps. At bit rates of 100 Mbit/s, 200 Mbit/s, and 400 Mbit/s, the sensitivities of −57.2 dBm, −53.42 dBm, and −51.06 dBm are experimentally demonstrated with a single InGaAs/InAlAs SPAD respectively. In addition, a theoretical sensitivity of −42.7 dBm is predicted at 1.8 Gbit/s with a 4 × 4 InGaAs/InAlAs SPAD array.

Highly Sensitive Indirect Time-of-Flight Distance Sensor With Integrated Single-Photon Avalanche Diode in 0.35 μm CMOS

This work describes the architecture and measured capabilities of an optical distance sensing application specific integrated circuit (ASIC) manufactured in 0.35 μm CMOS with a nominal supply voltage of 3.3 V for indirect time-of-flight. An integrated single-photon avalanche diode (SPAD) with an active diameter of 38 μm is used as detector with 6.6 V excess bias, active quenching and active resetting circuit. Phase measurement is performed using a digital correlation approach with digital counters. Due to the unmatched sensitivity of SPADs, sub-cm accuracy measurements can be performed with a received signal power in the pW range. Background light ratios up to 24.1 dB still allow sub-cm precision. Depending on the required accuracy and the received optical power, the measurement time can be adjusted freely up to several seconds only limited by digital counter depth. Compared to a pin-photodiode iTOF sensor in the same technology, this chip has a sensitivity improvement of 33.3 dB and 40.7 dB for a distance accuracy of 1 cm and 10 cm, respectively, while reducing the effective measurement time by 75% at the same time. The chip size is 1.4 mm × 1.4 mm including two correlator blocks, for simultaneous acquisition of two phase steps. The number of correlators is scalable allowing parallel measurements of phase correlations.

Performance analysis of mobile adaptive networks in VLC multiplicative SPAD channel noise conditions

Mobile diffusion adaptive networks are distributed sensor networks used for tracking and localization. They are considered as the network of several mobile nodes which are able to perform target localization by sharing their information among their neighboring nodes. Due to their low computational costs, they have found many applications. However, there are some hindering problems and disturbances preventing their smooth operation particularly for mobile networks. Among them, the link noise during data exchange between the nodes can have significant impact on the network performance, causing a large convergence error. Therefore, detailed and precise investigation of noise model and its impact on the mobile networks becomes important. In this paper the challenging case of multiplicative noise for a visible light communication (VLC) has been modeled, implemented, and the performance of mobile adaptive network analyzed. This is achieved by using single photon avalanche diodes (SPADS) for node communications within the mobile diffusion adaptive networks. The results show a completely different performance of the network compared with the case of additive noises.

Gate-Width Optimisation Based on Time-Gated Single Photon Avalanche Diode Receiver for Optical Wireless Communications

Using a single photon avalanche diode (SPAD) as a receiver in an optical wireless communications (OWC) system can effectively expand the transmission distance. However, the performance of the SPAD receiver is usually affected with the bit error rate (BER) lower bound determined by background light and the inter-symbol interference (ISI) distortion caused by dead time. In this paper, external time-gated technology is employed, and the SPAD is only activated within the set gate-ON time to alleviate the influence of background light and ISI distortion. The SPAD photon counting model and the communication BER model are established according to the external time-gated characteristics. Considering the functional relationship among the gate-ON time, signal light flux, background light flux and blocking time, we take the minimum BER as the optimization target, the optimal gate-ON time is derived. The numerical results show that whenever the signal light flux or the background light flux is higher, the BER performance of the time-gated mode is apparently better than the free-running mode. For example, when signal photons and background photons are 30 and 10 per symbol time, respectively, the BER of free-running SPAD converges to 0.1, while the BER of the time-gated scheme is about 10−6.

High resolution TCSPC imaging of diffuse light with a one-dimensional SPAD array scanning system.

We report a time-correlated single-photon counting (TCSPC) imaging system based on a line-scanning architecture. The system benefits from the high fill-factor, active area, and large dimension of an advanced CMOS single-photon avalanche diode (SPAD) array line-sensor. A two-dimensional image is constructed using a moving mirror to scan the line-sensor field-of-view (FOV) across the target, to enable the efficient acquisition of a two-dimensional 0.26 Mpixel TCSPC image. We demonstrate the capabilities of the system for TCSPC imaging and locating objects obscured in scattering media - specifically to locate a series of discrete point sources of light along an optical fibre submerged in a highly scattering solution. We demonstrate that by selectively imaging using early arriving photons which have undergone less scattering than later arriving photons, our TCSPC imaging system is able to locate the position of discrete point sources of light than a non-time-resolved imaging system.

Smart Wide-field Fluorescence Lifetime Imaging System with CMOS Single-photon Avalanche Diode Arrays.

Wide-field fluorescence lifetime imaging (FLIM) is a promising technique for biomedical and clinic applications. Integrating with CMOS single-photon avalanche diode (SPAD) sensor arrays can lead to cheaper and portable real-time FLIM systems. However, the FLIM data obtained by such sensor systems often have sophisticated noise features. There is still a lack of fast tools to recover lifetime parameters from highly noise-corrupted fluorescence signals efficiently. This paper proposes a smart wide-field FLIM system containing a 192×128 COMS SPAD sensor and a field-programmable gate array (FPGA) embedded deep learning (DL) FLIM processor. The processor adopts a hardware-friendly and light-weighted neural network for fluorescence lifetime analysis, showing the advantages of high accuracy against noise, fast speed, and low power consumption. Experimental results demonstrate the proposed system's superior and robust performances, promising for many FLIM applications such as FLIM-guided clinical surgeries, cancer diagnosis, and biomedical imaging.

Single-Photon Counting with Semiconductor Resonant Tunneling Devices.

Optical quantum information science and technologies require the capability to generate, control, and detect single or multiple quanta of light. The need to detect individual photons has motivated the development of a variety of novel and refined single-photon detectors (SPDs) with enhanced detector performance. Superconducting nanowire single-photon detectors (SNSPDs) and single-photon avalanche diodes (SPADs) are the top-performer in this field, but alternative promising and innovative devices are emerging. In this review article, we discuss the current state-of-the-art of one such alternative device capable of single-photon counting: the resonant tunneling diode (RTD) single-photon detector. Due to their peculiar photodetection mechanism and current-voltage characteristic with a region of negative differential conductance, RTD single-photon detectors provide, theoretically, several advantages over conventional SPDs, such as an inherently deadtime-free photon-number resolution at elevated temperatures, while offering low dark counts, a low timing jitter, and multiple photon detection modes. This review article brings together our previous studies and current experimental results. We focus on the current limitations of RTD-SPDs and provide detailed design and parameter variations to be potentially employed in next-generation RTD-SPD to improve the figure of merits of these alternative single-photon counting devices. The single-photon detection capability of RTDs without quantum dots is shown.

On the optimization of underwater quantum key distribution systems with time-gated SPADs

In this paper, we study the effect of various transmitter and receiver parameters on the quantum bit error rate (QBER) performance of underwater quantum key distribution. We utilize a Monte Carlo approach to simulate the trajectories of emitted photons transmitting in water from the transmitter towards the receiver. Based on propagation delay results, we first determine a proper value for the bit period to avoid intersymbol interference as a result of possible multiple scattering events. Then, based on the angle of arrival of the received photons, we determine a proper field of view to limit the average number of received background noise. Finally, we determine the optimal value for the single photon avalanche diode gate time in the sense of minimizing the QBER for the selected system parameters and given propagation environment.

Study on Measurement Error Reduction Using the Internal Interference Light Reduction Structure of a Time-of-Flight Sensor

In recent years, the demand for the installation of Time-of-Flight (ToF) sensors in mobile phones and other devices to send and receive distance information has increased. A ToF sensor is a system that measures the distance to an object by calculating the elapsed time of an infrared (IR) light emitted from a vertical-cavity surface-emitting laser to the moment it returns to the single-photon avalanche diode after being reflected by the object. In this study, we analyzed the IR optical path of a ToF sensor structure using optical simulation. In addition, we analyzed the field of view, amount of light source, and intensity of the internal interference light. Moreover, the internal structure of the ToF sensor, which can minimize the intensity of interference light, was optimized and designed. Consequently, the internal interference light intensity decreased by 84% compared to the structure designed using conventional method. Furthermore, a structure was optimized using a polarizing film and quarter-wave plate, the internal interference light intensity of this structure reduced by 88% compared to that of the conventional method, and the distance measurement error of the ToF sensor decreased significantly.

Time-coordinated SPAD-based receiver for high-speed optical wireless communication

In an optical wireless communication system (OWC), the single photon avalanche diode (SPAD) can effectively improve the sensitivity of the receiver. However, the inter-slot interference (ISI) distortion and counting losses are inevitable because of the deadtime of the SPAD device. This effect is especially serious when the symbol time is similar than the deadtime. In this work, we propose a time-coordinated SPAD-based receiver scheme that enables multiple time-gated SPADs to reduce ISI distortion and counting losses in the high-speed transmission. The photon counting models and bit error rate (BER) model are established under the effect of ISI to the time-coordinated scheme. The results show that the proposed time-coordinated scheme not only can effectively reduce the ISI distortion and counting losses, but also can significantly improve the signal to noise ratio (SNR) of the receiver. In addition, compared with the free-running SPADs receiver under the same size, the background light tolerance and BER performance of the proposed time-coordinated receiver are better at the high signal power.

Self-calibrated Fourier transform spectrometer for laser-induced fluorescence spectroscopy with single-photon avalanche diode detection.

Fourier transform spectrometers are commonly used in scientific and industrial settings because of their ability to record complete spectra with high signal-to-noise ratios. Using a single-photon avalanche diode as the detector improves the sensitivity but adds complications in laser-induced fluorescence applications related to detector saturation and acquisition time exceeding the typical scan time. Here, we report a spectrometer for the detection of laser-induced fluorescence signal together with the excitation light, and use the second harmonic signal from the excitation light to correct the phase and calibrate the spectrum, removing the need for a separate calibration source. We achieve a resolution of 0.4cm-1 in the wavelength range of 1140.2 nm, and demonstrate detection of signals with powers as low as 377fW, with a noise floor of 172fW/cm-1.

Historical Perspectives, State of art and Research Trends of Single Photon Avalanche Diodes and Their Applications (Part 1: Single Pixels)

The ability to detect single photons is becoming an enabling key capability in an increasing number of fields. Indeed, its scope is not limited to applications that specifically rely on single photons, such as quantum imaging, but extends to applications where a low signal is overwhelmed by background light, such as laser ranging, or in which faint excitation light is required not to damage the sample or harm the patient. In the last decades, SPADs gained popularity with respect to other single-photon detectors thanks to their small size, possibility to be integrated in Complementary Metal-Oxide Semiconductor processes, room temperature operability, low power supply and, above all, the possibility to be fast gated (to time filter the incoming signal) and to precisely timestamp the detected photons. The development of large digital arrays that integrates the detectors and circuits has allowed the implementation of complex functionality on-chip, tailoring the detectors to suit the need of specific applications. This review proposes a complete overview of silicon SPADs characteristics and applications. In this Part I, starting with the working principle, simulation models and required frontend, the paper moves to the most common parameters adopted in literature for characterizing SPADs, and describes single pixels applications and their performance. In the next Part II, the focus is then posed on the development of SPAD arrays, presenting some of the most notable examples found in literature. The actual exploitation of these designs in real applications (e.g., automotive, bioimaging and radiation detectors) is then discussed.

Возможности датчиков изображения с фотонным лавинным диодом

In many fields of science and technology there is a need to record fast running processes and phenomena, often occurring in low light conditions. In such cases, there is a need to use highly sensitive image sensors. Such sensors can be constructed on the basis of photon avalanche diodes capable of capturing even single photons. However, creating this type of sensor with high performance, in particular, with high resolution, presents a number of technological challenges, as they are more complex than traditional CMOS (Complementary Metal–Oxide–Semiconductor) and CCD (Charge-Coupled Device) sensors. Using recent advances and new circuitry, Canon created the first megapixel image sensor with a photon avalanche diode (Single Photon Avalanche Diode, SPAD). In this article, in addition to general issues related to image sensors with photon avalanche diode, the design, operation, characteristics, features and possible applications of Canon’s SPAD megapixel sensor are discussed. In particular, the methods of photon counting and time-of-flight are discussed, as well as the dynamic range of the sensor, the possibilities of sensor application for imaging in the infrared range, and the prospects for wide application of SPAD sensors in the near future. As a result, it can be noted that in addition to direct use for obtaining high-quality 2D-images of fast processes running in low light conditions, such a sensor can be used for taking images in the infrared range, to obtain 3D-images for xReality, measuring the distance to objects, obtaining a depth map, as well as in areas of science and technology that are new for such devices, including, for example, quantum computing.

A Multi-Time-Gated SPAD Array with Integrated Coarse TDCs

Time-gating of single-photon avalanche diodes (SPADs) was commonly used as a method to reduce dark noise in biomedical imaging applications where photon events are correlated with a reference clock. Time-gating was also used to obtain timing information of photon events by shifting the gate windows applied to a SPAD array. However, in this approach, fine timing resolution comes at the cost of a lengthened measurement time due to the large number of counts required for each shift. As a solution, we present a multi-time-gated SPAD array that simultaneously applies shifted gate windows to an array of SPADs, which has the potential to reduce the measurement time compared to a single time gate window. Compared to similar works, this design has fully integrated the multi-gate generation using shared circuitry which also functions as a coarse time-to-digital converter. The proposed array, fabricated in the TSMC 65 nm standard CMOS process, achieved a median dark count rate (DCR) of 37 kHz, 4.37 ns gate widths, 550 ps timing resolution, and a peak photon detection probability (PDP) of 42.9% at 420 nm, all at a 0.8 V excess bias.

Comparison of super-resolution and noise reduction for passive single-photon imaging

Single-photon sensitive image sensors have recently gained popularity in passive imaging applications where the goal is to capture photon flux (brightness) values of different scene points in the presence of challenging lighting conditions and scene motion. Recent work has shown that high-speed bursts of single-photon timestamp information captured using a single-photon avalanche diode camera can be used to estimate and correct for scene motion thereby improving signal-to-noise ratio and reducing motion blur artifacts. We perform a comparison of various design choices in the processing pipeline used for noise reduction, motion compensation, and upsampling of single-photon timestamp frames. We consider various pixelwise noise reduction techniques in combination with state-of-the-art deep neural network upscaling algorithms to super-resolve intensity images formed with single-photon timestamp data. We explore the trade space of motion blur and signal noise in various scenes with different motion content. Using real data captured with a hardware prototype, we achieved super-resolution reconstruction at frame rates up to 65.8 kHz (native sampling rate of the sensor) and captured videos of fast-moving objects. The best reconstruction is obtained with the motion compensation approach, which achieves a structural similarity (SSIM) of about 0.67 for fast-moving rigid objects. We are able to reconstruct subpixel resolution. These results show the relative superiority of our motion compensation compared to other approaches that do not exceed an SSIM of 0.5.

Imaging Dynamics Beneath Turbid Media via Parallelized Single-Photon Detection.

Noninvasive optical imaging through dynamic scattering media has numerous important biomedical applications but still remains a challenging task. While standard diffuse imaging methods measure optical absorption or fluorescent emission, it is also well‐established that the temporal correlation of scattered coherent light diffuses through tissue much like optical intensity. Few works to date, however, have aimed to experimentally measure and process such temporal correlation data to demonstrate deep‐tissue video reconstruction of decorrelation dynamics. In this work, a single‐photon avalanche diode array camera is utilized to simultaneously monitor the temporal dynamics of speckle fluctuations at the single‐photon level from 12 different phantom tissue surface locations delivered via a customized fiber bundle array. Then a deep neural network is applied to convert the acquired single‐photon measurements into video of scattering dynamics beneath rapidly decorrelating tissue phantoms. The ability to reconstruct images of transient (0.1–0.4 s) dynamic events occurring up to 8 mm beneath a decorrelating tissue phantom with millimeter‐scale resolution is demonstrated, and it is highlighted how the model can flexibly extend to monitor flow speed within buried phantom vessels.

High Performance InGaAs/InP Single-Photon Avalanche Diode Using DBR-Metal Reflector and Backside Micro-Lens

InGaAs/InP single-photon avalanche diodes have proven to be the most practical solution for quantum key distribution and long-distance 3-D imaging. In this paper, to further improve the device performance, a new reflector involving the metal layer and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$S\mathrm{i}{O_2}$</tex-math></inline-formula> / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\text{Ti}{O_2}$</tex-math></inline-formula> distributed Bragg reflector has been applied together with a micro-lens to increase the absorption efficiency by 58%. The normalized dark count rate is 127 Hz, 361 Hz, and 665 Hz for 10%, 20%, 30% photon detection efficiency, respectively, when it is operated under the gated mode with a pulse repetition rate of 50 MHz and pulse width of 1 ns at 233 K temperature. The normalized dark count rate is nearly an order of magnitude lower than commercial devices at 233 K, reflecting the high performance of the proposed near-infrared single-photon detectors.

Calibration and comparison of detection efficiency for free-space single-photon avalanche diodes at 850 nm.

A detection efficiency measurement system for free-space single-photon detectors has been established at the National Research Council (NRC) Canada. This measurement apparatus incorporates an 850 nm fiber laser source and utilizes a double-attenuation and substitution calibration technique. Detection efficiency calibrations of silicon single-photon avalanche photodiodes (SPADs) at incident photon rates in the range of 1.0×105 photon counts per second (Cts/s) (36 fW) to 2.1×106Cts/s (734 fW) are SI-traceable through the substitution configuration with a silicon transfer standard detector, calibrated directly using the NRC absolute cryogenic radiometer. The measurement approach taken by the NRC was compared with the SPAD calibration technique implemented at the National Institute of Standards and Technology (NIST) in the United States. The count-rate-dependent detection efficiency of a silicon SPAD was measured at NIST and compared with results from the same SPAD measured at NRC within the range of incident photon rates from 1×105Cts/s to 5×105Cts/s. Comparison of the calibration results shows agreement between the two laboratories within the combined measurement uncertainties.

A new guard ring for ionizing radiation tolerance enhancement in single-photon avalanche diodes

A new guard ring is studied to improve radiation tolerance of single-photon avalanche diodes (SPAD) designed in 180 nm high voltage Complementary Metal-Oxide-Semiconductor (CMOS) technology. The radiation tolerance enhancement is obtained due to the reduction of the electric field inside Shallow Trench Isolation (STI), which reduces radiation-induced positive oxide charge density inside the STI by almost one order of magnitude. TCAD simulations show that, after 1 Mrad (SiO2) of X-ray radiation with a cathode voltage of 24.4 V, the increase in dark count rate at room temperature compared to pre-irradiation is 1438 counts per second (cps) and 311 cps for the conventional structure and new structure respectively, which shows a 78.3 % decrease in DCR increment for the new structure as compared to the conventional one. Moreover, the fill factor and photon detection probability of the new structure decreases by 0.3 % and 6 % compared to the conventional structure, which is negligible.

A 500 × 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

In this article, we report on SwissSPAD3 (SS3), a 500 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$ </tex-math></inline-formula> 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gates, guaranteed by the circuit architecture to be nonoverlapping and covering the totality of the sensor’s exposure period. The gates can be adjusted with a temporal resolution of 17.9 ps, and the minimum measured gate width is 0.99 ns; to our knowledge, the shortest reported to date among large-format SPAD imagers. In the dual-channel mode, the burst frame rate is 49.8 and 97.7 kframes/s in the single-channel mode. A 2690-MB/s PCI express (PCIe) interface has been added to the data acquisition framework, enabling continuous operation at approximately 44 and 88 kframes/s. Due to optimizations of the gate-signal tree, we achieved a significant reduction to gate skew and gate width variation, which is negligible with respect to the SPAD temporal jitter. These improvements, along with sub-10-cps dark count rate (DCR) per pixel and 50% maximum photon detection probability (PDP), result in a sensor particularly well suited for fast acquisition fluorescence lifetime imaging microscopy (FLIM) experiments, for which we demonstrate reduced dispersion versus a single-gated sensor.