Single-photon Avalanche Diode Research Articles

Quantitative analysis of silicon photomultipliers for thermoluminescence measurement

The employment of silicon photomultipliers (SiPMs) in photon detection systems facilitates the reduction of detection module size, enhances portability and ruggedness, and lowers product costs. This study investigated the potential of SiPM in thermoluminescence (TL) measurements, focusing on its detection limits, temperature dependency, and dose responses. A 3 × 3 mm2 multi-pixel photon counter (MPPC, Hamamatsu MPPC) composed of 50 μm single-photon avalanche diodes (SPADs) was utilized in single-photon counting mode as the detector. This experimental setup was compared with a conventional photomultiplier tube (PMT) in TL readout case. To ensure comparable light exposure between the two detectors, a 3-mm diameter pinhole was positioned in front of the PMT. By using a thermoelectric (TE) cooling module to maintain the sensor temperature at −20 °C, signal reproducibility was achieved with a fluctuation of less than 1.2%, and a detection limit ranging from 30 to 300 μGy was assessed for four dosimeters: LiF:Mg,Ti, LiF:Mg,Cu,P, LiF:Mg,Cu,Si, and Al2O3:C. The dose response of the system was limited by significant signal saturation due to pile-up effects. We introduced a correction model with a 50 ns paralyzable deadtime, which enhanced the signal response by more than 20-fold. Furthermore, this model also correlated well with the observed count rates under high dark count rate (DCR) conditions up to 1.67 MHz. The findings from this study further contributes to the discussion regarding the perspective of SiPM as TL detectors.

Airborne single-photon LiDAR towards a small-sized and low-power payload

Single-photon light detection and ranging (LiDAR) has played an important role in areas ranging from target identification and 3D imaging to remote sensing. Its high sensitivity provides the feasibility of lightweight LiDAR systems for the resource-limited airborne and spaceborne platforms. Here, we design and demonstrate an airborne single-photon LiDAR towards the compact, small-sized, and low-power payload. To reduce the system size, we utilize small telescopes with an optical aperture of 47 mm and develop the sub-pixel scanning approach to enhance the imaging resolution. With the fine scanning mirrors, we validate the super-resolution ability in the ground experiment by surpassing the system’s resolution by 2.5 times and achieve high-resolution 3D imaging in the airborne experiment. To realize low-power LiDAR, we employ photon-efficient computational algorithms and high-quality single-photon avalanche diode (SPAD) arrays. This enables us to reconstruct images from noisy data even under challenging conditions of two signal photons per pixel. Using the airborne single-photon LiDAR system, we demonstrate 3D imaging during daytime over a large area for remote sensing applications and show the capability to reveal the detailed features of various landforms and objects.

Human activity recognition using a single-photon direct time-of-flight sensor

Single-Photon Avalanche Diode (SPAD) direct Time-of-Flight (dToF) sensors provide depth imaging over long distances, enabling the detection of objects even in the absence of contrast in colour or texture. However, distant objects are represented by just a few pixels and are subject to noise from solar interference, limiting the applicability of existing computer vision techniques for high-level scene interpretation. We present a new SPAD-based vision system for human activity recognition, based on convolutional and recurrent neural networks, which is trained entirely on synthetic data. In tests using real data from a 64×32 pixel SPAD, captured over a distance of 40 m, the scheme successfully overcomes the limited transverse resolution (in which human limbs are approximately one pixel across), achieving an average accuracy of 89% in distinguishing between seven different activities. The approach analyses continuous streams of video-rate depth data at a maximal rate of 66 FPS when executed on a GPU, making it well-suited for real-time applications such as surveillance or situational awareness in autonomous systems.

1064 nm rotational Raman polarization lidar for profiling aerosol and cloud characteristics

The vertical profiles of aerosol or mixed-phase cloud optical properties (e.g. extinction coefficient) at 1064 nm are difficult to obtain from lidar observations. Based on the techniques of rotational Raman signal at 1058 nm described by Haarig et al. [ Atmos. Meas. Tech. 9, 4269 (2016)10.5194/amt-9-4269-2016 ], we have developed a novel rotational Raman polarization lidar at 1064 nm at Wuhan University. In this design, we optimized the central wavelength of the rotational Raman channel to 1056 nm with a bandwidth of 6 nm to increase the signal-to-noise ratio and minimize the temperature dependence of the extracted rotational Raman spectrum. And then separated elastic polarization channels (1064 nm Parallel, P and 1064 nm Cross, S) into near range (low 1064 nm P and 1064 nm S) and far range detection channels (high 1064 nm P and 1064 nm S) to extend the dynamic range of lidar observation. Silicon single photon avalanche diodes (SPAD) working at photon counting mode were applied to improve the quantum efficiency and reduce the electronic noise, which resulted in quantum efficiency of 2.5%. With a power of 3 W diode pumped pulsed Nd:YAG laser and aperture of 250 mm Cassegrain telescope, the detectable range can cover the atmosphere from 0.3 km to the top troposphere (about 12-15 km). To the best of our knowledge, the design of this novel lidar system is described and the mixed-phase cloud and aerosol optical properties observations of backscatter coefficients, extinction coefficients, lidar ratio and depolarization ratio at 1064 nm were performed as demonstrations of the system capabilities.

A time-correlated single photon counting SPAD array camera with a bespoke data-processing algorithm for lightsheet fluorescence lifetime imaging (FLIM) and FLIM videos

A wide-field microscope with epi-fluorescence and selective plane illumination was combined with a single-photon avalanche diode (SPAD) array camera to enable live-cell fluorescence lifetime imaging (FLIM) using time-correlated single-photon counting (TCSPC). The camera sensor comprised of 192×128\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {192}\ imes \ ext {128}$$\\end{document} pixels, each integrating a single SPAD and a time-to-digital converter. Jointly, they produced a stream of single-photon images of photon arrival times with ≈38 ps\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\approx \ ext {38 ps}$$\\end{document} accuracy. The photon arrival times were subject to systematic delays and nonlinearities, which were corrected by a Monte-Carlo algorithm. The SPAD camera was then applied to FLIM where histogramming the resulting photon arrival times in each pixel resulted in decays compatible with common data processing pipelines for fluorescence lifetime analysis. The capabilities of the TCSPC camera-based FLIM microscope were demonstrated by imaging living unicellular photosynthetic algae and artificial lipid vesicles. Epi-fluorescence illumination enabled rapid fluorescence lifetime imaging of living cells and selective-plane illumination enabled 3-dimensional FLIM of stationary samples.

Single-photon avalanche diodes dynamic range and linear response enhancement by conditional probability correction.

Detectors based on single-photon avalanche diodes (SPADs) operating in free-running mode surfer from distorted detection signals due to the impact of afterpulse, dead time, and the non-linear detection efficiency response. This study presents a correction method based on conditional probability. In the experiments with high temporal resolution and huge dynamic range conditions, this method's residual sum of squares is near 68 times smaller than the uncorrected received data of SPAD and near 50 times smaller than deconvolution method. This method is applied to polarization lidar and CO2 lidar, and the performance shows significant improvement. This method effectively mitigates the impact of SPAD afterpulse, dead time, and detection efficiency non-linear response, making it suitable for all SPADs. Especially, our method is primarily employed for atmospheric detection.

Frontiers and challenges in silicon-based single-photon avalanche diodes and key readout circuits

Single-photon detectors enable the detection of extremely weak light with remarkable temporal precision. This capability provides crucial technological support for precise distance measurements and high-resolution imaging under low-light conditions. Silicon and silicon-based germanium single-photon detectors can operate in a wide spectrum from the visible to the near-infrared region, and exhibit fundamental advantages without needing heterogeneous integration. In recent years, there has been continuous progress in the miniaturization of silicon-based single-photon diodes and corresponding read-out circuits. The integration scheme of 3D stacking has enabled the optimization of the devices and circuits at different process nodes. This evolution has comprehensively enhanced system volumes and performances. Thus, detection systems and applications of silicon-based single-photon technology continue to expand. In this paper, we review the structural evolution, performance characterization, manufacturing processes, and analog front-end circuits of single-photon detectors based on CMOS/CIS technology and silicon-based germanium avalanche photodiodes. Additionally, we provide an overview of the critical circuits in typical application scenarios.

Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes

In this paper, the effects of proton and gamma irradiation on reach-through single-photon avalanche diodes (SPADs) are investigated. The I–V characteristics, gain and spectral response of SPAD devices under proton and gamma irradiation were measured at different proton energies and irradiation bias conditions. Comparison experiments of proton and gamma irradiation were performed in the radiation environment of geosynchronous transfer orbit (GTO) with two different radiation shielding designs at the same total ionizing dose (TID). The results show that after 30 MeV and 60 MeV proton irradiation, the leakage current and gain increase, while the spectral response decreases slightly. The leakage current degradation is more severe under the “ON”-bias condition compared to the “OFF”-bias condition, and it is more sensitive to the displacement radiation damage caused by protons compared to gamma rays under the same TID. Further analysis reveals that the non-elastic and elastic cross-section of protons in silicon is 1.05 × 105 times greater than that of gamma rays. This results in SPAD devices being more sensitive to displacement radiation damage than ionizing radiation damage. Under the designed shielding conditions, the leakage current, gain and spectral response parameters of SPADs do not show significant performance degradation in the orbit.

Zeptojoule detection of terahertz pulses by parametric frequency upconversion.

We combine parametric frequency upconversion with the single-photon counting technology to achieve terahertz (THz) detection sensitivity down to the zeptojoule (zJ) pulse energy level. Our detection scheme employs a near-infrared ultrafast source, a GaP nonlinear crystal, optical filters, and a single-photon avalanche diode. This configuration is able to resolve 1.4 zJ (1.4 × 10-21 J) THz pulse energy, corresponding to 1.5 photons per pulse, when the signal is averaged within only 1 s (or 50,000 pulses). A single THz pulse can also be detected when its energy is above 1185 zJ. These numbers correspond to the noise-equivalent power and THz-to-NIR photon detection efficiency of 1.3 × 10-16 W/Hz1/2 and 5.8 × 10-2%, respectively. To test our scheme, we perform spectroscopy of the water vapor between 1 and 3.7 THz and obtain results that are in agreement with those acquired with a standard electro-optic sampling (EOS) method. Our technique provides a 0.2 THz spectral resolution offering a fast alternative to EOS THz detection for monitoring specific spectral components in spectroscopy, imaging, and communication applications.

Simulation evaluation of a single-photon laser methane remote sensor for leakage rate monitoring.

We propose a novel methane leakage rate remote sensor that combines a single-photon avalanche diode detector with a near-infrared 1653.7 nm low-power laser. The proposed M sequence and triangle wave signal modulation method simultaneously realizes the detection of methane leakage and target point clouds. Innovatively, the sensor's methane concentration and leakage rate quantification ability were simulated by combining the Gaussian plume diffusion model and the Risley prism. The effects of the prism rotation ratio, wind speed, leakage rate, atmospheric stability (AS), target reflectivity, signal averaging period, and concentration spatial interpolation method on leakage rate are discussed. When plume methane concentrations reduce from 10,000 to 500 ppm·m, the relative concentration bias rise from 1% to 30%, the absolute concentration bias is approximately 100 ppm·m. Two spatial concentration interpolation methods introduced leakage rate bias ranging from 6%-25%. For a low AS, the leakage rate bias under the cubic interpolation method was small (approximately 1.6%). In addition, when the initial leakage rate increased from 100 to 1,000 mg/s, the leakage rate bias was approximately 20% smaller.

Room-temperature waveguide-coupled silicon single-photon avalanche diodes

Single photon detection is important for a wide range of low-light applications, including quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A key challenge in these applications has been to integrate single-photon detection capability into photonic circuits for the realization of complex photonic microsystems. Short-wavelength (λ < 1.1 μm) integrated photonics platforms that use silicon (Si) as photodetectors offer the opportunity to achieve single-photon avalanche diodes (SPADs) that operate at or near room temperature. Here, we report the first waveguide-coupled Si SPAD. The device is monolithically integrated in a Si photonic platform and operates in the visible spectrum. The device exhibited a single photon detection efficiency of >6% for wavelengths of 488 and 532 nm with an excess voltage of <20% of the breakdown voltage. The dark count rate was below 100 kHz at room temperature, with the possibility of improving by approximately 35% by reducing the temperature to −5 °C.

Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

In this work, single photon avalanche diodes (SPADs) were fabricated using the standard 180 nm complementary metal-oxide semiconductor process. Their small size of 15–16 μ m and low operating voltage made it possible to easily integrate them with readout circuits for compact on-chip sensors, particularly those used in the radiation sensor network of a nuclear plant. Four architectures were proposed for the SPADs, with a shallow trench isolation (STI) guard ring and different depletion regions designed to demonstrate the main performance parameters in each experimental configuration. The wide absorption region structure with PSD and a deep N-well could achieve a uniform electric field, resulting in a stable dark count rate (DCR). Additionally, the STI guard ring was implanted to mitigate the premature edge breakdown. A breakdown voltage was achieved for a low operating voltage of 10.75 V. The DCR results showed 286.3 Hz per μm2 at an excess voltage of 0.04 V. A photon detection probability of 21.48% was obtained at 405 nm.

Multiplexed near infrared fluorescence lifetime imaging in turbid media.

Fluorescence lifetime imaging (FLI) plays a pivotal role in enhancing our understanding of biological systems, providing a valuable tool for non-invasive exploration of biomolecular and cellular dynamics, both in vitro and in vivo. Its ability to selectively target and multiplex various entities, alongside heightened sensitivity and specificity, offers rapid and cost-effective insights. Our aim is to investigate the multiplexing capabilities of near-infrared (NIR) FLI within a scattering medium that mimics biological tissues. We strive to develop a comprehensive understanding of FLI's potential for multiplexing diverse targets within a complex, tissue-like environment. We introduce an innovative Monte Carlo (MC) simulation approach that accurately describes the scattering behavior of fluorescent photons within turbid media. Applying phasor analyses, we enable the multiplexing of distinct targets within a single FLI image. Leveraging the state-of-the-art single-photon avalanche diode (SPAD) time-gated camera, SPAD512S, we conduct experimental wide-field FLI in the NIR regime. Our study demonstrates the successful multiplexing of dual targets within a single FLI image, reaching a depth of 1cm within tissue-like phantoms. Through our novel MC simulation approach and phasor analyses, we showcase the effectiveness of our methodology in overcoming the challenges posed by scattering media. This research underscores the potential of NIR FLI for multiplexing applications in complex biological environments. By combining advanced simulation techniques with cutting-edge experimental tools, we introduce significant results in the non-invasive exploration of biomolecular dynamics, to advance the field of FLI research.

Large reconfigurable quantum circuits with SPAD arrays and multimode fibers

Reprogrammable integrated optics provides a natural platform for tunable quantum photonic circuits, but faces challenges when high dimensions and high connectivity are involved. Here, we implement high-dimensional linear transformations on spatial modes of photons using wavefront shaping together with mode mixing in a multimode fiber, and measure photon correlations using a time-tagging single-photon avalanche diode (SPAD) array. Our demonstration of a generalization of a Hong-Ou-Mandel interference to 22 output ports shows the scalability potential of wavefront shaping in complex media in conjunction with SPAD arrays for implementing high-dimensional reconfigurable quantum circuits. Specifically, we achieved (80.5±6.8)% similarity for indistinguishable photon pairs and (84.9±7.0)% similarity for distinguishable photon pairs using 22 detectors and random circuits.

Demonstration of particle tracking with scintillating fibres read out by a SPAD array sensor and application as a neutrino active target

Scintillating fibre detectors combine sub-mm resolution particle tracking, precise measurements of the particle stopping power and sub-ns time resolution. Typically, fibres are read out with silicon photomultipliers (SiPM). Hence, if fibres with a few hundred μ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\upmu $$\\end{document}m diameter are used, either they are grouped together and coupled with a single SiPM, losing spatial resolution, or a very large number of electronic channels is required. In this article we propose and provide a first demonstration of a novel configuration which allows each individual scintillating fibre to be read out regardless of the size of its diameter, by imaging them with Single-Photon Avalanche Diode (SPAD) array sensors. Differently from SiPMs, SPAD array sensors provide single-photon detection with single-pixel spatial resolution. In addition, O(us) or faster coincidence of detected photons allows to obtain noise-free images. Such a concept can be particularly advantageous if adopted as a neutrino active target, where scintillating fibres alternated along orthogonal directions can provide isotropic, high-resolution tracking in a dense material and reconstruct the kinematics of low-momentum protons (down to 150 MeV/c), crucial for an accurate characterisation of the neutrino-nucleus cross section. In this work the tracking capabilities of a bundle of scintillating fibres coupled to SwissSPAD2 is demonstrated. The impact of such detector configuration in GeV-neutrino experiments is studied with simulations and reported. Finally, future plans, including the development of a new SPAD array sensor optimised for neutrino detection, are discussed.

Room temperature operation of germanium-silicon single-photon avalanche diode.

The ability to detect single photons has led to the advancement of numerous research fields1-11. Although various types of single-photon detector have been developed12, because of two main factors-that is, (1) the need for operating at cryogenic temperature13,14 and (2) the incompatibility with complementary metal-oxide-semiconductor (CMOS)fabrication processes15,16-so far, to our knowledge, only Si-based single-photon avalanche diode (SPAD)17,18 has gained mainstream success and has been used in consumer electronics. With the growing demand to shift the operation wavelength from near-infrared to short-wavelength infrared (SWIR)for better safety and performance19-21, an alternative solution is required because Si has negligible optical absorption for wavelengths beyond 1 µm. Here we report a CMOS-compatible, high-performing germanium-silicon SPAD operated at room temperature, featuring a noise-equivalent power improvement over the previous Ge-based SPADs22-28 by 2-3.5 orders of magnitude. Key parameters such as dark count rate, single-photon detection probability at 1,310 nm, timing jitter, after-pulsing characteristic time and after-pulsing probability are, respectively, measured as 19 kHz µm-2, 12%, 188 ps, ~90 ns and <1%, with a low breakdown voltage of 10.26 V and a small excess bias of 0.75 V. Three-dimensional point-cloud images are captured with direct time-of-flight technique as proof of concept. This work paves the way towards using single-photon-sensitive SWIR sensors, imagers and photonic integrated circuits in everyday life.

Photon counting fibre optic distributed temperature sensing with a CMOS SPAD array.

Time-resolved fibre optic Raman distributed temperature sensing (DTS) measurements experience long measurement times due to a weak backscattered Raman signal inside optical fibres or limited detector count rates. Here, improvements to previous work based on individual detectors are demonstrated using a 512 pixel complementary-metal-oxide semiconductor (CMOS) single-photon avalanche diode (SPAD) line sensor array with integrated (on-chip) timing electronics. Multiplexed single photon counting increases count rate and decreases measurement time for practical applications. This allows temperature to be measured every 0.5 m with 0.7 °C accuracy and a 10 s measurement time using a 13.0 m optical fibre, performance over longer distance is also investigated.

Analytical Model of Dark Count Rate in Single-Photon Avalanche Diodes

Analytical Model of Dark Count Rate in Single-Photon Avalanche Diodes

Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling.

A single photon avalanche diode (SPAD) cell using N-channel extended-drain metal oxide semiconductor (N-EDMOS) is tested for its hot-carrier damage (HCD) resistance. The stressing gate-voltage (VGS) dependence is compared to hot-hole (HH) injection, positive bias temperature (PBT) instability and off-mode (VGS = 0). The goal was to check an accurate device lifetime extraction using accelerated DC to AC stressing by applying the quasi-static (QS) lifetime technique. N-EDMOS device is devoted to 3D bonding with CMOS imagers obtained by an optimized process with an effective gate-length Leff = 0.25 µm and a SiO2 gate-oxide thickness Tox = 5 nm. The operating frequency is 10 MHz at maximum supply voltage VDDmax = 5.5 V. TCAD simulations are used to determine the real voltage and timing configurations for the device in a mixed structure of the SPAD cell. AC device lifetime is obtained using worst-case DC accelerating degradation, which is transferred by QS technique to the AC waveforms applied to N-EDMOS device. This allows us to accurately obtain the AC device lifetime as a function of the delay and load for a fixed pulse shape. It shows the predominance of the high energy hot-carriers involved in the first substrate current peak during transients.

High crosstalk suppression in InGaAs/InP single-photon avalanche diode arrays by carrier extraction structure

Crosstalk has become an urgent issue for single-photon avalanche diode arrays. In previous work, trenches were introduced between pixels to block the crosstalk optical path in planar InGaAs/InP single-photon avalanche diode arrays, since the optical crosstalk was considered as the main crosstalk mechanism. However, the crosstalk suppression effect of this solution is not satisfactory. Here, we demonstrate a carrier extraction structure to efficiently reduce crosstalk by electrically guiding photogenerated crosstalk holes in the non-pixel region to the surface, since we find that the optical-electrical crosstalk is the dominant crosstalk mechanism. Experimental measurements show that a narrow carrier extraction structure makes a 91.52% (96.22%) crosstalk reduction between the nearest neighbor pixels in arrays with 100 (50) μm pixel pitch, and it does not cause any etching damage. These results reveal the primary source of crosstalk in InGaAs/InP single-photon avalanche diode arrays and provide a practical route to fabricate low-crosstalk, high-pixel-density arrays for use in high-resolution three-dimensional imaging and quantum technologies.