Single-layer MoS2 Research Articles

Studies on Electronic Structure and Optical Properties of MoS2/X (X = WSe2, MoSe2, AlN, and ZnO) Heterojunction by First Principles

The single-layer MoS2 is a highly sought-after semiconductor material in the field of photoelectric performance due to its exceptional electron mobility and narrow bandgap. However, its photocatalytic efficiency is hindered by the rapid recombination rate of internal photogenerated electron–hole pairs. Currently, the construction of heterojunctions has been demonstrated to effectively mitigate the recombination rate of photogenerated electron–hole pairs. Therefore, this paper employs the first principles method to calculate and analyze the four heterojunctions formed by MoS2/WSe2, MoS2/MoSe2, MoS2/AlN, and MoS2/ZnO. The study demonstrates that the four heterojunctions exhibit structural stability. The construction of heterojunctions, as compared to a monolayer MoS2, leads to a reduction in the band gap, thereby lowering the electron transition barrier and enhancing the light absorption capacity of the materials. The four systems exhibit II-type heterojunction. Therefore, the construction of heterojunctions can effectively enhance the optical properties of these systems. By forming heterojunctions MoS2/WSe2 and MoS2/MoSe2, the absorption coefficient in the visible light region is significantly increased, resulting in a greater ability to respond to light compared to that of MoS2/ZnO and MoS2/AlN. Consequently, MoS2-based heterojunctions incorporating chalcogenide components WSe2 and MoSe2, respectively, exhibit superior catalytic activity compared to MoS2 heterojunctions incorporating non-chalcogenide components ZnO and AlN, respectively. The absorption spectrum analysis reveals that MoS2/MoSe2 exhibits the highest light responsivity among all investigated systems, indicating its superior photoelectric performance.

Understanding the Influence of Carbon Interlayers on Material Removal and Tribochemical Evolution in Multilayer Coatings Through In-Situ Analysis

The carbon interlayers in the multilayer coatings can improve the load-bearing capacity and oxidation resistance, promote the layer-by-layer wear mechanism, and extend the lifespan of the multilayer coating, which is crucial to improving their tribological properties. To investigate the role of C interlayers in the competitive relationship between tribochemistry and material removal in multilayer coatings, this study comprehensively examines the tribological behavior of single layer MoS2 and multilayer MoS2/C coatings through in-situ tribotests and nanoscratch tests. Key findings reveal that the C interlayers enhance the tribological behavior by reducing the oxidation rate of MoS2, improving the load distribution, and delaying the onset of coating failure. Specifically, the single layer MoS2 coating demonstrated a lifespan of 55,000 cycles, whereas the multilayer MoS2/C coating achieved 80,000 cycles, reflecting a 45% enhancement. The critical load increased from 8 mN to 18 mN, indicating a 125% improvement in removal resistance. The presence of C layers results in a more stable and enduring tribofilm, which leads to reduced friction and wear. This study underscores the importance of in-situ analysis by combining nanoscratch with Raman mapping to elucidate the complex tribological behavior of coatings. These insights are crucial for designing efficient, wear-resistant, low-friction multilayer coatings for diverse industrial applications.

Photo responsive single layer MoS2 nanochannel membranes for photocatalytic degradation of contaminants in water

The major polluting aspects of our global fashion industries are the textile wastewater that turns black all our freshwater reservoirs. Nano-filtration through membrane technology is one of the biggest solutions of industrial wastewater treatment but the fouling of membrane is the major limitation of previous work. In this research, novel PVDF/MoS2-TNT (PMT) nanocomposite membranes were fabricated through a modified In-situ polymerisation phase inversion method. X-ray diffraction (XRD) analysis also confirmed the β-phase of PVDF within the developed PVDF/MoS2-TNT membrane. XPS analysis provides evidence about the presence of a specific chemical states of titanium nanotube and molybdenum disulphide which is involved in the photocatalytic degradation of pollutant molecules. Scanning electron microscope (SEM) shows that our membranes are porous in nature. PVDF/MoS2-TNT membranes exhibit excellent filtration efficiency (∼97%) for textile wastewater. The results and outcomes of the research demonstrate that PMT membranes have enormous potential in the commercial application of textile wastewater treatment.

On-Water Surface Synthesis of Two-Dimensional Polymer Membranes for Sustainable Energy Devices.

ConspectusIon-selective membranes are key components for sustainable energy devices, including osmotic power generators, electrolyzers, fuel cells, and batteries. These membranes facilitate the flow of desired ions (permeability) while efficiently blocking unwanted ions (selectivity), which forms the basis for energy conversion and storage technologies. To improve the performance of energy devices, the pursuit of high-quality membranes has garnered substantial interest, which has led to the exploration of numerous candidates, such as polymeric membranes (e.g., polyamide and polyelectrolyte), laminar membranes (e.g., transition metal carbide (MXene) and graphene oxide (GO)) and nanoporous 2D membranes (e.g., single-layer MoS2 and porous graphene). Despite impressive progress, the trade-off effect between ion permeability and selectivity remains a major scientific and technological challenge for these membranes, impeding the efficiency and stability of the resulting energy devices.Two-dimensional polymers (2DPs), which represent monolayer to few-layer covalent organic frameworks (COFs) with periodicity in two directions, have emerged as a new candidate for ion-selective membranes. The crystalline 2DP membranes (2DPMs) are typically fabricated either by bulk crystal exfoliation followed by filtration or by direct interfacial synthesis. Recently, the development of surfactant-monolayer-assisted interfacial synthesis (SMAIS) method by our group has been pivotal, enabling the synthesis of various highly crystalline and large-area 2DPMs with tunable thicknesses (1 to 100 nm) and large crystalline domain sizes (up to 120 μm2). Compared to other membranes, 2DPMs exhibit well-defined one-dimensional (1D) channels, customizable surface charge, ultrahigh porosity, and ultrathin thickness, enabling them to overcome the permeability-selectivity trade-off challenge. Leveraging these attributes, 2DPMs have established their critical roles in diverse energy devices, including osmotic power generators and metal ion batteries, opening the door for next-generation technology aimed at sustainability with a low carbon footprint.In this Account, we review our achievements in synthesizing 2DPMs through the SMAIS method and highlight their selective-ion-transport properties and applications in sustainable energy devices. We initially provide an overview of the SMAIS method for producing highly crystalline 2DPMs by utilizing the programmable assembly and enhanced reactivity/selectivity on the water surface. Subsequently, we discuss the critical structural parameters of 2DPMs, including pore sizes, charged sites, crystallinity, and thickness, to elucidate their roles in selective ion transport. Furthermore, we present the burgeoning landscape of energy device applications for 2DPMs, including their use in osmotic power generators and as electrode coating in metal ion batteries. Finally, we conclude persistent challenges and future prospects encountered in synthetic chemistry, material science, and energy device applications within this rapidly evolving field.

TEM-processed defect densities in single-layer TMDCs and their substrate-dependent signature in PL and Raman spectroscopy

The optical properties of the direct-bandgap transition metal dichalcogenides (TMDCs) MoS2 and WS2 are heavily influenced by their atomic defect structure and substrate interaction. In this work we use low-voltage chromatic and spherical aberration (CC/CS)-corrected high-resolution transmission electron microscopy to simultaneously create and image chalcogen vacancies in TMDCs. However, correlating the defect structure, produced and analyzed using transmission electron microscopy (TEM), with optical spectroscopy often presents challenges because of very different fields of view and sample platforms involved. Here we employ a reverse transfer technique to transfer electron-irradiated single-layer MoS2 and WS2 from the TEM grid to various substrates for subsequent optical examination. The dynamics of defect creation are studied in atomic resolution on a separate sample, which allows to apply the derived statistics to larger irradiated areas on the other samples. The intensity of both the defect-bound exciton peak in photoluminescence (PL) and the defect-induced LA(M) mode in Raman spectra increase with defect density. The best substrates for defect-density determination by optical spectroscopy are polystyrene for PL and SiC and Si/SiO2 for Raman spectroscopy. These investigations represent an important step towards the quantification of defects using solely optical spectroscopy, paving the way for fast, reliable, and automatable optical quality control of optoelectronic devices.

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Since the first report on single-layer MoS2 based transistor, rapid progress has been achieved in two-dimensional (2D) material-based atomically thin electronics, providing an alternative approach to solve the bottleneck in silicon device miniaturization. In this scenario, reliable contact between the metal electrodes and the subnanometer-thick 2D materials becomes crucial in determining the device performance. Here, utilizing the quasi-van der Waals (vdW) epitaxy of metals on fluorophlogopite mica, we demonstrate an all-stacking method for the fabrication of 2D devices with high-quality vdW contacts by mechanically transferring pre-deposited metal electrodes. This technique is applicable for complex device integration with sizes up to the wafer scale and is also capable of tuning the electric characteristics of the interfacial junctions by transferring selective metals. Our results provide an efficient, scalable, and low-cost technique for 2D electronics, allowing high-density device integration as well as a handy tool for fundamental research in vdW materials.

Quantum capacitance behavior of Ti2CO2/MoS2 heterostructures with 3d and 4d transition-metal doping

The storage capacity of capacity, quantum capacitance behavior, and atomic stability of O-defected, S-defected, 3d and 4d transition-metal (3d-TMs: Sc, Ti, V, Cr, Mn, Fe, Co, and Ni; 4d-TMs: Y, Zr, Nb, Mo, Ru, Rh, Pd, and Ag) doped Ti2CO2/MoS2 heterostructures were studied by density functional theory (DFT). Pristine Ti2CO2/MoS2 exhibited a high quantum capacitance of 1038.62 μF/cm2 at the positive potential. The appearance of O-vacancy in Ti2CO2-layer enhanced the capacitance of Ti2CO2/MoS2 at negative bias, and S-vacancy induced an obvious improvement of quantum capacitance at 0 V. After introducing various transition metals into modified Ti2CO2/MoS2 heterostructures, the doping in pristine structures increased the capacitance value to be 1182.71 μF/cm2 (Y-doping), while TM-doping in S-vacancy defected Ti2CO2/MoS2 systems induced a slight decrease of capacitance at positive potentials. For TM-doped O-defected Ti2CO2/MoS2, only Sc- and Y-doped systems exhibited higher quantum capacitance than the pristine Ti2CO2/MoS2, which were 1093.60 and 1096.26 μF/cm2. Due to the obvious advantage of capacitance of pristine Ti2CO2/MoS2 than Ti2CO2 or MoS2 single-layer at the positive bias, it can be used as effective anodes for high-capacitance supercapacitors, while 3d or 4d TM-doping had no significant enhancement in capacitance behaviors. The findings in this study were supposed to be theoretical data base to design high-performance supercapacitors.

Optical Signal Investigation of Monolayer MoS2 Grown Via Glass-Assisted CVD On Patterned Surfaces

Enhancing photoluminescence (PL) in single-layer transition metal dichalcogenides has garnered significant interest, particularly for advancing high-performance 2D electronics and optoelectronics. The combination of surface engineering and contemporary growth methods has provided a platform for investigating optical signals. In this study, we present variations in PL and Raman signals of single-layer MoS2 flakes grown conformally using the glass-assisted CVD method on square-patterned surfaces with varying well depths. PL spectroscopy revealed a systematic and pronounced enhancement in intensities as the valley thickness decreased from 285 nm to 225 nm. Conversely, for the hill regions of the samples, the PL intensity initially increased with decreasing valley thickness and then decreased, despite the hill regions having a constant thickness of 300 nm. On the other hand, PL maps did not exhibit a systematic dependence of intensities on the hill-valley thickness distinction, contrary to expected results based on literature data for similar materials on flat surfaces. The origin of the intensity oscillations was attributed to possible mechanisms, including thickness-dependent interference and strain-related exciton funneling effects. Additionally, Raman measurements revealed irregular variations in intensity in hill regions, dependent on the thicknesses of the underlying SiO2 layers. Furthermore, we observed that the sizes of the flakes increased as the well depths of the underlying patterned surface decreased. This phenomenon might be attributed to alterations in the carrier gas flow pattern and varying temperature gradients between the hills and valleys. These results hold substantial potential to open new avenues for the integration of 2D transition metal dichalcogenides into on-chip electronic and optoelectronic devices.

Nonlinear Static Bending and Forced Vibrations of Single-Layer MoS2 with Thermal Stress.

Single-layer molybdenum disulfide (MoS2) has been a research focus in recent years owing to its extensive potential applications. However, how to model the mechanical properties of MoS2 is an open question. In this study, we investigate the nonlinear static bending and forced vibrations of MoS2, subjected to boundary axial and thermal stresses using modified plate theory with independent in-plane and out-of-plane stiffnesses. First, two nonlinear ordinary differential equations are obtained using the Galerkin method to represent the nonlinear vibrations of the first two symmetrical modes. Second, we analyze nonlinear static bending by neglecting the inertial and damping terms of the two equations. Finally, we explore nonlinear forced vibrations using the method of multiple scales for the first- and third-order modes, and their 1:3 internal resonance. The main results are as follows: (1) The thermal stress and the axial compressive stress reduce the MoS2 stiffness significantly. (2) The bifurcation points of the load at the low-frequency primary resonance are much smaller than those at high frequency under single-mode vibrations. (3) Temperature has a more remarkable influence on the higher-order mode than the lower-order mode under the 1:3 internal resonance.

Boosting CO2 Hydrogenation to Methanol over Monolayer MoS2 Nanotubes by Creating More Strained Basal Planes.

The controlled creation, selective exposure, and activation of more basal planes while simultaneously minimizing the generation and exposure of edge sites are crucial for accelerating methanol synthesis from CO2 hydrogenation over MoS2 catalysts but remain a bottleneck. Here, we report a facile method to fabricate heteronanotube catalysts with single-layer MoS2 coaxially encapsulating the carbon nanotubes (CNTs@MoS2) through host-guest chemistry. Inheriting the long tubular structure of CNTs, the grown MoS2 nanotubes exhibit significantly more basal planes than bulk MoS2 crystals. More importantly, the tubular curvature not only promotes strain and sulfur vacancy (Sv) generation but also preferentially exposes more in-plane Sv while limiting edge Sv exposure, which is conducive to methanol synthesis. Both the strain and layer number of MoS2 can be easily and finely adjusted by altering CNT diameter and quantity of precursors. Remarkably, CNTs@MoS2 with monolayer MoS2 and maximum strain displayed methanol selectivity of 78.1% and methanol space time yield of 1.6 g gMoS2-1 h-1 at 260 °C and GHSV of 24000 mL gcat.-1 h-1, representing the best results to date among Mo-based catalysts. This study provides prospects for novel catalyst design by synthesizing coaxial tubular heterostructure to create additional catalytic sites and ultimately enhance conversion and selectivity.

Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition.

Molybdenum disulfide (MoS2), a semiconducting two-dimensional layered transition metal dichalcogenide (2D TMDC), with attractive properties enables the opening of a new electronics era beyond Si. However, the notoriously high contact resistance (RC) regardless of the electrode metal has been a major challenge in the practical applications of MoS2-based electronics. Moreover, it is difficult to lower RC because the conventional doping technique is unsuitable for MoS2 due to its ultrathin nature. Therefore, the metal-insulator-semiconductor (MIS) architecture has been proposed as a method to fabricate a reliable and stable contact with low RC. Herein, we introduce a strategy to fabricate MIS contact based on atomic layer deposition (ALD) to dramatically reduce the RC of single-layer MoS2 field effect transistors (FETs). We utilize ALD Al2O3 as an interlayer for the MIS contact of bottom-gated MoS2 FETs. Based on the Langmuir isotherm, the uniformity of ALD Al2O3 films on MoS2 can be increased by modulating the precursor injection pressures even at low temperatures of 150 °C. We discovered, for the first time, that film uniformity critically affects RC without altering the film thickness. Additionally, we can add functionality to the uniform interlayer by adopting isopropyl alcohol (IPA) as an oxidant. Tunneling resistance across the MIS contact is lowered by n-type doping of MoS2 induced by IPA as the oxidant in the ALD process. Through a highly uniform interlayer combined with strong doping, the contact resistance is improved by more than two orders of magnitude compared to that of other MoS2 FETs fabricated in this study.

Highly active single-layer 2H-MoS2 for CO2 hydrogenation to methanol

Few-layer MoS2 were recently discovered as promising catalyst for CO2 hydrogenation to methanol, despite extreme conditions proposed for its synthesis. Herein, we developed an exceptionally facile, safe, and scalable strategy to prepare single-layer MoS2 (s-MoS2) at ambient pressure using instantaneous self-assembled micelles of didodecyldimethylammonium (DA)−MoS4 complexes as precursor. During the pyrolysis, the presence and subsequent decomposition of coordinated DA inhibited the growth and sheet-stacking of MoS2 in c-direction, resulting in discrete s-MoS2 molecular sheets which maximize the exposure of in-plane S vacancies (Sv). Remarkably, s-MoS2 displayed 77% methanol selectivity and methanol space time yield of 1.54 g·gMoS2–1·h–1, representing the top levels among reported MoS2 catalysts under similar conditions. Density functional theory (DFT) simulations attribute high activity of s-MoS2 to its ability to stabilize in-plane low-coordinated Mo atoms in the vicinity of Sv on both sides of monolayer. The superior performance of s-MoS2 creates new prospects for technological applications beyond CO2 hydrogenation.

Insulating 6,6-Phenyl-C61-butyric Acid Methyl Ester on Transition-Metal Dichalcogenides: Impact of the Hybrid Materials on the Optical and Electrical Properties.

In this study we develop a strategy to insulate 6,6 -Phenyl C61 butyric acid methyl ester (PCBM) on the basal plane of transition metal dichalcogenides (TMDs). Concretely single layers of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2 and ultrathin MoO2 and WO2 were grown via chemical vapor deposition (CVD). Then, the thiol group of a PCBM modified with cysteine reacts with the chalcogen vacancies on the basal plane of TMDs, yielding PCBM-MoS2, PCBM-MoSe2, PCBM-WS2, PCBM-WSe2, PCBM-WTe2, PCBM-MoO2 and PCBM-WO2. Afterwards, all the hybrid materials were characterized using several techniques, including XPS, Raman spectroscopy, TEM, AFM, and cyclic voltammetry. Furthermore, PCBM causes a unique optical and electrical impact in every TMDs. For MoS2 devices, the conductivity and photoluminescence (PL) emission achieve a remarkable enhancement of 1700 % and 200 % in PCBM-MoS2 hybrids. Similarly, PCBM-MoTe2 hybrids exhibit a 2-fold enhancement in PL emission at 1.1 eV. On the other hand, PCBM-MoSe2, PCBM-WSe2 and PCBM-WS2 hybrids exhibited a new interlayer exciton at 1.29-1.44, 1.7 and 1.37-154 eV along with an enhancement of the photo-response by 2400, 3200 and 600 %, respectively. Additionally, PCBM-WTe2 and PCBM-WO2 showed a modest photo-response, in sharp contrast with pristine WTe2 or WO2 which archive pure metallic character.

Selected Area Manipulation of MoS2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing.

We demonstrate direct-write patterning of single and multilayer MoS2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF2 precursor. MoS2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source-drain current at constant gate and source-drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS2 devices.

Non-volatile memory field effect transistor composed of ferroelectric Mn-doped InP thin films and single-layer MoS2 channel

Ferroelectric properties can be generated by doping semiconductor thin films of ZnO and InP with a transition metal such as Mn. Furthermore, ferroelectric thin films exhibiting ferroelectric properties can be utilized as non-volatile memory components, potentially replacing conventional flash memory. In this study, we investigated non-volatile memory properties using field-effect transistors (NVMFET) fabricated from Mn-doped InP (MIP) thin films and single-layer MoS2 sheets. The 5 % Mn-doped MIP thin films exhibited a larger remanent polarization of 8.2 μC/cm2 compared to the 3 % Mn-doped films with 5.1 μC/cm2. The NVMFET devices, operating as non-volatile memory devices, demonstrated a distinct memory window for current changes. Notably, enhancing the remanent polarization of the 5 % Mn-doped MIP thin film further improved the memory window of the corresponding NVMFET.

Electronic and optical properties of Cr / Cl co-doped in single-layer MoS2: A first principles study

This study aims to investigate the co-doping effect of Cr and Cl in monolayer molybdenum disulfide (MoS2) crystals. Density functional theory (DFT) was used to study the electronic structure and optical properties of the doped material, employing the PBE-GGA calculation method for the exchange-correlation energy. Key factors such as density of states, band structure, dielectric function, photoconductivity, refractive index, and absorptivity were analyzed. The findings indicate that co-doping of Cr and Cl reduces the band gap and introduces impurity energy levels within the band gap, thereby improving the photocatalytic performance.

Tunable, multifunctional opto-electrical response in multilayer FePS3/single-layer MoS2 van der Waals p-n heterojunctions.

The combination of specific van der Waals semiconductors in vertical stacks leads to atomically sharp heterointerfaces with unique properties, offering versatility and additional functionality for thin, flexible, optoelectronic devices. In this work, we demonstrate heterostructures built from single-layer MoS2 (n-type) and multilayer FePS3 (p-type) as multifunctional p-n junctions where robust photoluminescent light emission and broadband electrical photo-response coexist. This is made possible by the inherent properties of the materials involved and the precise energy band alignment at their interface, which preserves the photoluminescent emission provided by the single-layer MoS2 and confers exceptional tunability to the system. Indeed, through small changes in the applied voltage across the junction, the interplay between photoluminescence and photocurrent generation can be tuned, allowing for a precise control of the light emission of single-layer MoS2 - from severely quenched to an order of magnitude enhancement. Additionally, the broadband photo-response of the system presents an enhanced performance under ultraviolet illumination, in contrast to other van der Waals heterostacks containing single-layer semiconductors. Furthermore, this photo-response can be adjusted by the application of an external electric field, enabling photocurrent generation under both reverse and forward bias, thereby contributing to the overall functionality and versatility of the system.

Sodium chloride-assisted CVD enables controlled synthesis of large single-layered MoS2.

Thin-layer MoS2 has attracted much interest because of its potential in diverse technologies, including electronics, optoelectronics and catalysis these few years. In particular, finding a simple and effective solution for large-scale growth of thin-layer semiconductor nanosheets is a prerequisite for achieving their excellent performance. In this paper, we investigated four different substrates under identical conditions for MoS2 film growth and observed a strong correlation between substrate surface conditions and MoS2 growth. To enhance substrate performance, a low-concentration NaCl water solution (25 mg mL-1) was employed for pre-treating the substrate surface, thereby modifying its initial state. In the chemical vapor deposition (CVD) growth environment, the introduced halide ions served as surface dangling bonds. The pre-treated led to a remarkable 90% increase in the growth rate of MoS2 on the substrate surface, facilitating the production of large monolayer MoS2 sheets (∼200 μm). This growth mechanism further enabled the manufacturing of ultra-large single crystals (∼1 mm). Consequently, our research presents a straightforward and cost-effective approach for the large-scale production of nanosheets. Field-effect transistors (FETs) based on the pre-treated monolayer MoS2 exhibited high mobility (12 cm2 V-1 s-1) and a large on/off ratio (104). Therefore, our research provides a simple and low-cost approach for large-scale production of nanosheets for use in high-quality electronics over large areas.

In-situ methyl red doped MoS2 field effect transistor made by atomically thin MoS2 channel

Here we present the effects of Methyl Red (MR) doping on the electrical properties of the MoS2 field effect transistor (FET) in in-situ experimental system where the doping and electrical measurement are carried out in a single ultra-high vacuum chamber. A single-layered MoS2 flake was used as channel material for the FET preparation. N-type doping by MR was confirmed by the left shift of threshold voltage (Vth) and the surface vibrational change measured by Raman spectroscopy. The n-doping by MR is implied by the Fermi level shift towards greater binding energy with MR coverage, as proven by an X-ray photoelectron spectroscopy (XPS) measurement. It is estimated from XPS that the MoS2-FET device may detect the doping effect from the sub-monolayer MR. MR was detected on the MoS2 surface by the Time-of-Flight Secondary Ionization Mass Spectroscopy (ToF-SIMS). The findings may pave the way for innovations in electronic device design, with potential implications for fields ranging from nanoelectronics to sensor technology.

Patterning single-layer materials by electrical breakdown using atomic force microscopy

The development of nanoelectronics and nanotechnologies has been boosted significantly by the emergence of 2D materials because of their atomic thickness and peculiar properties, and developing a universal, precise patterning technology for single-layer 2D materials is critical for assembling nanodevices. Demonstrated here is a nanomachining technique using electrical breakdown by an AFM tip to fabricate nanopores, nanostrips, and other nanostructures on demand. This can be achieved by voltage scanning or applying a constant voltage while moving the tip. By measuring the electrical current, the formation process on single-layer materials was shown quantitatively. The present results provide evidence of successful pattern fabrication on single-layer MoS2, boron nitride, and graphene, although further confirmation is still needed. The proposed method holds promise as a general nanomachining technology for the future.