Single-junction Solar Cells Research Articles

Exploring the Feasibility and Performance of Perovskite/Antimony Selenide Four-Terminal Tandem Solar Cells

The tandem solar cell presents a potential solution to surpass the Shockley–Queisser limit observed in single-junction solar cells. However, creating a tandem device that is both cost-effective and highly efficient poses a significant challenge. In this study, we present proof of concept for a four-terminal (4T) tandem solar cell utilizing a wide bandgap (1.6–1.8 eV) perovskite top cell and a narrow bandgap (1.2 eV) antimony selenide (Sb2Se3) bottom cell. Using a one-dimensional (1D) solar cell capacitance simulator (SCAPS), our calculations indicate the feasibility of this architecture, projecting a simulated device performance of 23% for the perovskite/Sb2Se3 4T tandem device. To validate this, we fabricated two wide bandgap semitransparent perovskite cells with bandgaps of 1.6 eV and 1.77 eV, respectively. These were then mechanically stacked with a narrow bandgap antimony selenide (1.2 eV) to create a tandem structure, resulting in experimental efficiencies exceeding 15%. The obtained results demonstrate promising device performance, showcasing the potential of combining perovskite top cells with the emerging, earth-abundant antimony selenide thin film solar technology to enhance overall device efficiency.

Performance analysis of A3B2X9 (Cs3Bi2I9) based perovskite photovoltaic tandem structure with crystalline Silicon (c-Si)

The efficiency of solar cells with single-junction utilizing organic-inorganic hybrid perovskites have attained a value more than 25.5%. The device power conversion efficiency (PCE) can be improved further either by optimizing the absorber layer (Perovskite film) or by investigating the novel device structures such as tandem based solar cells with perovskite and silicon. This combination of top cell (Perovskite solar cell) and bottom cell (Silicon solar cell) can improve the PCE which surpasses the Shockley-Queisser limit of single-junction solar cells by utilizing a wider range of solar spectrum. This paper presents an optimization and simulation of standalone Cs3Bi2I9 perovskite solar cell which was later integrated with a c-Si solar cell to simulate a tandem structure using SCAPS-1D software. The aim is to investigate the performance enhancement of the perovskite solar cell by optimizing it and stacking it on top of a high-efficiency c-Si solar cell using a four-terminal (4T) structure. At a short-circuit current density of 16.165 mA/cm2 and an open-circuit voltage of 1.41 V, the simulation findings demonstrate that the Cs3Bi2I9 perovskite solar cell exhibits a high-power conversion efficiency of 20.37%. The tandem structure demonstrates an enhanced power conversion efficiency of 31.59% which is significantly higher than the efficiency of the individual cells. The Cs3Bi2I9 perovskite solar cell is a great choice for application in tandem systems with c-Si solar cells for high-efficiency, according to the simulation results. This study provides valuable insights for the development of efficient perovskite/c-Si tandem solar cells.

Ultra-Thin GaAs Single-Junction Solar Cells for Self-Powered Skin-Compatible Electrocardiogram Sensors.

GaAs thin-film solar cells have high efficiency, reliability, and operational stability, making them a promising solution for self-powered skin-conformal biosensors. However, inherent device thickness limits suitability for such applications, making them uncomfortable and unreliable in flexural environments. Therefore, reducing the flexural rigidity becomes crucial for integration with skin-compatible electronic devices. Herein, this study demonstrated a novel one-step surface modification bonding methodology, allowing a streamlined transfer process of ultra-thin (2.3µm thick) GaAs solar cells on flexible polymer substrates. This reproducible technique enables strong bonding between dissimilar materials (GaAs-polydimethylsiloxane, PDMS) without high external pressures and temperatures. The fabricated solar cell showed exceptional performance with an open-circuit voltage of 1.018V, short-circuit current density of 20.641mAcm-2, fill factor of 79.83%, and power conversion efficiency of 16.77%. To prove the concept, the solar cell is integrated with a skin-compatible organic electrochemical transistor (OECT). Competitive electrical outputs of GaAs solar cells enabled high current levels of OECT under subtle light intensities lower than 50mWcm-2, which demonstrates a self-powered electrocardiogram sensor with low noise (signal-to-noise ratio of 32.68dB). Overall, this study presents a promising solution for the development of free-form and comfortable device structures that can continuously power wearable devices and biosensors.

BMP]+[BF4]--Modified CsPbI1.2Br1.8 Solar Cells with Improved Efficiency and Suppressed Photoinduced Phase Segregation.

With the rapid progress in a power conversion efficiency reaching up to 26.1%, which is among the highest efficiency for single-junction solar cells, organic-inorganic hybrid perovskite solar cells have become a research focus in photovoltaic technology all over the world, while the instability of these perovskite solar cells, due to the decomposition of its unstable organic components, has restricted the development of all-inorganic perovskite solar cells. In recent years, Br-mixed halogen all-inorganic perovskites (CsPbI3-xBrx) have aroused great interests due to their ability to balance the band gap and phase stability of pure CsPbX3. However, the photoinduced phase segregation in lead mixed halide perovskites is still a big burden on their practical industrial production and commercialization. Here, we demonstrate inhibited photoinduced phase segregation all-inorganic CsPbI1.2Br1.8 films and their corresponding perovskite solar cells by incorporating a 1-butyl-1-methylpiperidinium tetrafluoroborate ([BMP]+[BF4]-) compound into the CsPbI1.2Br1.8 films. Then, its effect on the perovskite films and the corresponding hole transport layer-free CsPbI1.2Br1.8 solar cells with carbon electrodes under light is investigated. With a prolonged time added to the reduced phase segregation terminal, this additive shows an inhibitory effect on the photoinduced phase segregation phenomenon for perovskite films and devices with enhanced cell efficiency. Our study reveals an efficient and simple route that suppresses photoinduced phase segregation in cesium lead mixed halide perovskite solar cells with enhanced efficiency.

Narrow Bandgap Metal Halide Perovskites for All-Perovskite Tandem Photovoltaics.

All-perovskite tandem solar cells are attracting considerable interest in photovoltaics research, owing to their potential to surpass the theoretical efficiency limit of single-junction cells, in a cost-effective sustainable manner. Thanks to the bandgap-bowing effect, mixed tin-lead (Sn-Pb) perovskites possess a close to ideal narrow bandgap for constructing tandem cells, matched with wide-bandgap neat lead-based counterparts. The performance of all-perovskite tandems, however, has yet to reach its efficiency potential. One of the main obstacles that need to be overcome is the─oftentimes─low quality of the mixed Sn-Pb perovskite films, largely caused by the facile oxidation of Sn(II) to Sn(IV), as well as the difficult-to-control film crystallization dynamics. Additional detrimental imperfections are introduced in the perovskite thin film, particularly at its vulnerable surfaces, including the top and bottom interfaces as well as the grain boundaries. Due to these issues, the resultant device performance is distinctly far lower than their theoretically achievable maximum efficiency. Robust modifications and improvements to the surfaces of mixed Sn-Pb perovskite films are therefore critical for the advancement of the field. This Review describes the origins of imperfections in thin films and covers efforts made so far toward reaching a better understanding of mixed Sn-Pb perovskites, in particular with respect to surface modifications that improved the efficiency and stability of the narrow bandgap solar cells. In addition, we also outline the important issues of integrating the narrow bandgap subcells for achieving reliable and efficient all-perovskite double- and multi-junction tandems. Future work should focus on the characterization and visualization of the specific surface defects, as well as tracking their evolution under different external stimuli, guiding in turn the processing for efficient and stable single-junction and tandem solar cell devices.

Anti-Solvent-Free Preparation for Efficient and Photostable Pure-Iodide Wide-Bandgap Perovskite Solar Cells.

The perovskite/silicon tandem solar cell (TSC) has attracted tremendous attention due to its potential to breakthrough the theoretical efficiency set for single-junction solar cells. However, the perovskite solar cell (PSC) designed as its top component cell suffers from severe photo-induced halide segregation owing to its mixed-halide strategy for achieving desirable wide-bandgap (1.68 eV). Developing pure-iodide wide-bandgap perovskites is a promising route to fabricate photostable perovskite/silicon TSCs. Here, we report efficient and photostable pure-iodide wide-bandgap PSCs made from an anti-solvent-free (ASF) technique. The ASF process is achieved by mixing two precursor solutions, both of which are capable of depositing corresponding perovskite films without involving anti-solvent. The mixed solution finally forms Cs0.3DMA0.2MA0.5PbI3 perovskite film with a bandgap of 1.68 eV. Furthermore, methylammonium chloride additive is applied to enhance the crystallinity and reduce the trap density of perovskite films. As a result, the pure-iodide wide-bandgap PSC delivers efficiency as high as 21.30 % with excellent photostability, the highest for this type of solar cells. The ASF method significantly improves the device reproducibility as compared with devices made from other anti-solvent methods. Our findings provide a novel recipe to prepare efficient and photostable wide-bandgap PSCs.

Monolithic Two-Terminal Tandem Solar Cells Using Sb2S3 and Solution-Processed PbS Quantum Dots Achieving an Open-Circuit Potential beyond 1.1 V.

Multijunction solar cells have the prospect of a greater theoretical efficiency limit than single-junction solar cells by minimizing the transmissive and thermalization losses a single absorber material has. In solar cell applications, Sb2S3 is considered an attractive absorber due to its elemental abundance, stability, and high absorption coefficient in the visible range of the solar spectrum, yet with a band gap of 1.7 eV, it is transmissive for near-IR and IR photons. Using it as the top cell (the cell where light is first incident) in a two-terminal tandem architecture in combination with a bottom cell (the cell where light arrives second) of PbS quantum dots (QDs), which have an adjustable band gap suitable for absorbing longer wavelengths, is a promising approach to harvest the solar spectrum more effectively. In this work, these two subcells are monolithically fabricated and connected in series by a poly(3,4-ethylene-dioxythiophene) polystyrene sulfonate (PEDOT:PSS)-ZnO tunnel junction as the recombination layer. We explore the surface morphology of ZnO QD films with different spin-coating conditions, which serve as the PbS QD cell's electron transport material. Furthermore, we examine the differences in photogenerated current upon varying the PbS QD absorber layer thickness and the electrical and optical characteristics of the tandem with respect to the stand-alone reference cells. This tandem architecture demonstrates an extended spectral response into the IR with an open-circuit potential exceeding 1.1 V and a power conversion efficiency of 5.6%, which is greater than that of each single-junction cell.

Metasurface absorber based single junction thin film solar cell exceeding 30% efficiency.

In this article, we report, as per our knowledge, for the first time, a thin film single junction solar cell with a metasurface absorber layer directly incorporated. We have used an interconnected dual inverted split ring resonator pattern in the InAsP absorber layer. The structure eliminated patterns of conventional metals, such as silver, aluminum, and gold, from the active layer, a common drawback in conventional solar absorbers, hindering their direct integration into solar cells. Optical simulation results show a peak ideal short circuit current density of 76.23mA/cm2 for the meta-absorber structure under solar illumination. This current is the highest among previously reported absorbers based on Group IV materials and III-V compounds, overcoming the low solar absorption of such metasurfaces. The final proposed solar cell structure combines this meta-absorber layer with traditional efficiency enhancement methods namely anti-reflecting coating, textured back reflector, and transparent top electrode. This novel single junction structure shows a solar absorption efficiency of 97.86% and a power conversion efficiency of 30.87%, the highest for III-V solar cells. Our device proves the ability of metasurface absorber layers to produce high-efficiency solar cells and is expected to pave the way for integrating novel meta-devices into state-of-the-art photovoltaic devices, aiding the global transition towards clean energy sources.

Review on ultrahigh growth rate GaAs solar cells by metalorganic vapor-phase epitaxy

The aim of this review paper is to summarize a decade of research focused on enhancing metalorganic vapor-phase epitaxy (MOVPE) growth rates of GaAs, driven by the imperative for most cost-effective and energy-efficient III–V compounds’ production. While MOVPE is renowned for producing high-quality devices, it has been constrained by production cost. For example, MOVPE was traditionally thought to have moderate growth rates that limit the throughput of the cost-intensive reactors. Recent research endeavors, however, have demonstrated ultrafast growth rates, exceeding 280 μm/h, with a remarkable group III precursor utilization efficiency of over 50%. It is worth noting that even with increased growth rates, the surface quality remains unaffected in terms of roughness and morphology. Nonetheless, optoelectronic properties, such as minority carrier lifetime, deteriorate for both p- and n-doped materials under constant growth conditions. This is attributed to an increase in the defect density of arsenic antisites, particularly EL2 and HM1 defects, as revealed by deep-level transient spectroscopy investigations. Some of these losses can be mitigated by optimizing growth conditions, such as elevating the temperature and reducing the V/III ratio. The latter not only restores some of the material quality but also increases the growth rate and reduces precursor consumption. Still, fully recovering the original reference lifetimes remains a challenge. Solar cell results indicate that structures with predominantly n-type absorbers are less affected by reduced minority carrier lifetimes. A remarkable 24.5% efficiency was achieved in a GaAs single-junction solar cell grown at 120 μm/h, representing less than 1 min of growth time for the absorber layers.

Cation Influence on Hot-Carrier Relaxation in Tin Triiodide Perovskite Thin Films.

Slow hot-carrier cooling may potentially allow overcoming the maximum achievable power conversion efficiency of single-junction solar cells. For formamidinium tin triiodide, an exceptional slow cooling time of a few nanoseconds was reported. However, a systematic study of the cation influence, as is present for lead compounds, is lacking. Here, we report the first comparative study on formamidinium, methylammonium, and cesium tin triiodide thin films. By investigating their photoluminescence, we observe a considerable shift of the emission peak to high energy with the increase of the excited-state population, which is more prominent in the case of the two hybrid organic-inorganic perovskites (∼45 meV vs ∼15 meV at 9 × 1017 cm-3 carrier density). The hot-carrier photoluminescence of the three tin compositions decays with a 0.6-2.8 ns time constant with slower cooling observed for the two hybrids, further indicating their importance.

Study and simulation of GaInP single junction solar cell

This study aims to improve the electrical performances of the GaxIn1-xP single junction solar cell. To this objective, a single-junction solar cell GaxIn1-xP has been simulated with different doping concentrations and thicknesses of the emitter and base region in order to improve its conversion efficiency. The simulations have been done taking into account the optical, electrical and physical properties of the GaxIn1-xP according to the indium composition. The physical models such as the radiative, Auger and Shockley–Read–Hall (SRH) recombination were also considered. The optimized single junction Ga0.04In0.96P (1.39 eV) solar cell structure achieved, showed, under standard conditions (1-sun, AM1.5, 300 K), a maximum conversion efficiency of 23.73%. Moreover, the effects of the thickness and the doping concentration of each region on the electrical parameters of the Ga0.04In0.96P solar cell were also studied.

21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact

GaAs remains one of the crucial materials for solar cell applications as it boasts the world's highest efficiency single‐junction solar cells. However, their high cost limits their widespread terrestrial applications. Traditional GaAs solar cells require a complex stack of doped junctions, which can only be grown using epitaxy, which is a very costly technique. Herein, a nonepitaxial bilayer of ZnO and TiO2 as electron‐selective contact is studied. It is shown that a bilayer selective contact can achieve very high performance through interface band engineering and a reduction of the barrier for electron transfer. 21.2% efficient solar cells is achieved, with Voc of 1.04 V, Jsc of 26.13 mA cm−2, and a fill factor of 77.8%. The Voc reported in the article is comparable to the highest Voc reported for substrate‐based GaAs solar cells of 1.075 V. An experimental loss analysis shows that the device is mainly limited by series and shunt resistance and reflection losses, both of which can further be minimized by optimization of the fabrication process. The results presented will be very useful for the further development of cheaper GaAs solar cells, whereas the bilayer selective contact concept can be implemented for other kinds of solar cells.

Hot-Carrier Cooling Regulation for Mixed Sn-Pb Perovskite Solar Cells.

The rapid relaxation of hot carriers leads to energy loss in the form of heat and consequently restricts the theoretical efficiency of single-junction solar cells; However, this issue has not received much attention in tin-lead perovskites solar cells. Herein, tin(II) oxalate (SnC2O4) is introduced into tin-lead perovskite precursor solution to regulate hot-carrier cooling dynamics. The addition of SnC2O4 increases the length of carrier diffusion, extends the lifetime of carriers, and simultaneously slows down the cooling rate of carriers. Furthermore, SnC2O4 can bond with uncoordinated Sn2+ and Pb2+ ions to regulate the crystallization of perovskite and enable large grains. The strongly reducing properties of the C2O4 2- can inhibit the oxidation of Sn2+ to Sn4+ and minimize the formation of Sn vacancies in the resulting perovskite films. Additionally, as a substitute for tin(II) fluoride, the introduction of SnC2O4 avoids the carrier transport issues caused by the aggregation of F- ions at the interface. As a result, the SnC2O4-treated Sn-Pb cells show a champion efficiency of 23.36%, as well as 27.56% for the all-perovskite tandem solar cells. Moreover, the SnC2O4-treated devices show excellent long-term stability. This finding is expected to pave the way toward stable and highly efficient all-perovskite tandem solar cells.

Top cell design and optimization of all-chalcopyrite CuGaSe<sub>2</sub>/CuInSe<sub>2</sub> two-terminal tandem solar cells

Solar cells have attracted much attention, for they can convert solar energy directly into electric energy, and have been widely utilized in manufacturing industry and people’s daily life. Although the power conversion efficiency (PCE) of single-junction solar cells has gradually improved in recent years, its maximum efficiency is still limited by the Shockley-Queisser (SQ) limit of single-junction solar cells. To exceed the SQ limit and further obtain high-efficiency solar cells, the concept of tandem solar cells has been proposed. In this work, the chalcopyrite CuGaSe<sub>2</sub>/CuInSe<sub>2</sub> tandem solar cells are studied systematically in theory by combining first-principle calculations and SCAPS-1D device simulations. Firstly, the electronic structure, defect properties and corresponding macroscopic performance parameters of CuGaSe<sub>2</sub> (CGS) are obtained by first-principles calculations, and are used as input parameters for subsequent device simulations of CGS solar cells. Then, the single-junction CGS and CuInSe<sub>2</sub> (CIS) solar cells are simulated by using SCAPS-1D software, respectively. The simulation results for the single junction CIS solar cells are in good agreement with the experimental values. For single-junction CGS cells, the device simulations reveal that the CGS single-junction solar cells have the highest short-circuit current (<i>J</i><sub>sc</sub>) and PCE under the Cu-rich, Ga-rich and Se-poor chemical growth condition. Further optimization in the growth environment with the highest short circuit current (<i>J</i><sub>sc</sub>) shows that the open-circuit voltage (<i>V</i><sub>oc</sub>) and PCE of CGS solar cells can be improved by replacing the electron transport layer (ETL) with ZnSe. Finally, after the optimized CGS and CIS solar cells are connected in series with two-terminal (2T) monolithic tandem solar cell, the device simulation results show that under the growth temperature of 700 K and the growth environment of Cu-rich, Ga-rich, and Se-poor, with ZnSe serving as the ETL, the CGS thickness of 2000 nm and the CIS thickness of 1336 nm, the PCE of 2T monolithic CGS/CIS tandem solar cell can reach 28.91%, which is higher than the ever-recorded efficiency of the current single-junction solar cells, and shows that this solar cell has a good application prospect.

Investigation of perovskite layer growth from solution on textured substrates

Surface textures are indispensable to minimize optical losses in perovskite-based solar cells. However, the solution-processing of perovskite layers is often not compatible with textured substrates, and little is known about the film growth thereon. This study aims to elucidate the growth process of perovskite layers from solution on textured substrates and to identify the texture features ensuring compatibility with perovskite solution-processing. Using nanoimprint-lithography we prepared three different periodically as well as randomly textured glass substrates for spin-coated perovskite solar cells, of which one was duplicated from a commercially available texture. During the perovskite crystallization process, a time-resolved in situ photoluminescence measurement was conducted. The photoluminescence signal was not found to substantially alter using textured substrates with texture heights around 500 nm. Optical absorptance spectroscopy and scanning electron microscopic imaging were applied to investigate the growth, crystal structure, and optical properties of solution-processed perovskite on top of different textures. We find that periodic textures with height around 500 nm enable homogeneous solution-processed perovskite layers with optimized optical performance. In contrast, texture heights of several micrometers lead to macroscopic holes in the perovskite film. The results of this study will help to find optimum optical textures for high-efficiency perovskite single-junction and perovskite-silicon tandem solar cells.

Analysis of the mechanism for enhanced crystalline quality of wide-bandgap Cu(In,Ga)Se2 films by pre-deposited Ag precursor

Wide-bandgap Cu(In,Ga)Se2 (CIGS) solar cells show prospective utility for both single-junction and tandem solar cell applications. However, poor bulk absorber quality and interface recombination limiting the comprehensive utilization of its...

Recent progress in monolithic two-terminal perovskite-based triple-junction solar cells

Monolithic perovskite-based triple junction solar cells have the potential to surpass the power conversion efficiency (PCE) limits of single and dual-junction solar cells.

Efficient 1.77 eV-bandgap perovskite and all-perovskite tandem solar cells enabled by long-alkyl phosphonic acid

Incorporating dodecylphosphonic acid additives into 1.77 eV-bandgap perovskites enabled single-junction solar cells to achieve a PCE of 20.2%. Tandem cells further reached impressive PCEs of 27.41% (two-terminal) and 28.65% (four-terminal).

Comment on "Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D" by M. F. Rahman and S. Goumri-Said et al., RSC Adv., 2024, 14, 1924.

It was reported in early 2024 that a single-junction 1.1 eV bandgap copper indium gallium selenide (CIGS) solar cell can achieve actual power conversion efficiency up to 40.70%, open circuit voltage up to 1.330 V, and fill factor up to 90.55% at 300 K when the solar cell is irradiated by the air mass 1.5 global (AM1.5G) solar spectrum (M. F. Rahman et al., RSC Adv., 2024, 14, 1924-1938). These simulated solar cell performance parameters exceed the ideal detailed balance-limiting power conversion efficiency, open circuit voltage, and fill factor of a 1.1 eV bandgap single-junction solar cell.

Research progress of perovskite-based triple-junction tandem solar cells

The energy conversion efficiency of single-junction solar cells is limited by the Shockley-Queisser theory and the most effective strategy to break through this limit is to fabricate multi-junction tandem solar cells. Perovskite materials offer a continuously tunable energy band structure, which provides a new option for light-absorbing materials in multi-junction tandem cells. In the field of perovskite-based multi-junction tandem solar cells, triple-junction tandem solar cells demonstrating immense potential. The present paper introduces the configuration of triple-junction solar cells and addresses three scientific challenges. 1）Ensuring energy level alignment among sub-cells is a critical concern for three-junction batteries. Specifically, the top wide-band gap sub-cell must possess a band gap ranging from 1.8eV to 2.2eV; however, current perovskite material systems with wide-band gaps exhibit certain defects. 2） attaining current matching in multi-junction tandem solar cells while optimizing the absorption layer and minimizing parasitic absorption is essential to maximize solar cell current output. 3） The functional layers of multi-junction tandem solar cells are sequentially stacked using different deposition methods, thereby imposing higher compatibility requirements on the intermediate interconnect layer. Subsequently, the research progress of perovskite-based triple-junction tandem solar cells is then presented, encompassing perovskite/perovskite/silicon tandem solar cells, perovskite/perovskite/organic tandem solar cells, and all-perovskite tandem solar cells. Their respective highest efficiencies are 19.4%, 23.87%, and 27.1%. Finally, this paper examines the research direction for further enhancing the performance of triple-junction solar cells. In addition to augmenting energy conversion efficiency, perovskite-based solar cells must address stability issues in order to achieve future commercialization, thereby offering guidance for the development of efficient triple-junction cells.