Single Event Burnout Research Articles

Thermal modeling of single event burnout failure in semiconductor power devices

Experimental investigations of single event burnout (SEB) of power devices due to heavy ion impacts have identified the conditions required to produce device failure. A key feature observed in the data is an anomalistic secondary rise in current occurring shortly after the ion strike. To verify these findings including the thermally induced secondary plateau, simulations have been performed on the model single event burnout. The new models include additional thermally dependent electrical components to capture thermally induced physical effects. Through the inclusion of analytic temperature models coupled with the electrical model, the electrical response is predicted with reasonable accuracy. The simulations provide order-of-magnitude estimates as well as prediction of phenomenological features such as the secondary rise in current. This work represents a first attempt to characterize thermal failure of power devices due to heavy ion impacts by including temperature dependent components that until now have not been modeled. The thermal model in the present work produces qualitative agreement with experiments on SEB that have been previously unexplained.

Analysis of SEB and SEGR in super-junction MOSFETs

The electric field distribution in the super-junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burnout (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super-junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained.

Mechanism for single-event burnout of bipolar transistors

The mechanism for single-event burnout (SEB) of bipolar junction transistors (BJTs) was investigated with EPICS (Energetic Particle Induced Charge Spectroscopy) technique. The result indicated that the SEBs were triggered by newly identified electron injection mechanism that could not be predicted by usual numerical device simulators. Additionally the two stage SEB mechanism was proposed for BJTs.

Size effect on SEB cross-section of VDMOSFETS

This paper presents Single-Event Burnout (SEB) measurements on N-channel power MOSFETs which are developed in hardened technologies to be less sensitive to ion-induced SEGR. These devices were depicted as SEB free (Wheatley et al., 1996, IEEE Trans. Nuc. Sci., 43(6), 2944-2951). Measurements of SEB cross-section limits for hardened HARRIS FSL 110 are compared here with non-hardened IRF130 and the effect of size is evaluated.

Single event burnout sensitivity of embedded field effect transistors

Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

Single-event burnout of epitaxial bipolar transistors

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

Single event burnout of high-power diodes

High-power diodes might be damaged by a single particle of cosmic radiation. This particle has first to produce a secondary nucleus, that ionizes more densely, through a nuclear reaction with the silicon of the diode. A multiplication of the number of charge carriers, primarily produced by this nucleus, can occur and eventually lead to a break down. The onset of this charge carrier multiplication is investigated with accelerated heavy ions under well controlled conditions. Clear trends are revealed, but the process is not yet understood.

High energy ions for materials analysis, materials modification and medical applications

Energetic light and heavy ions are becoming more and more important for applications in science, technology and medicine. They are the special feature of the ion beam laboratory ISL at the Hahn-Meitner- Institut, Berlin. Examples of applications are: (i) materials analysis using high energy Elastic Recoil Detection Analysis (ERDA) and high energy Proton Induced X-ray Emission (PIXE), (ii) materials modification and damage by high LET nuclear tracks: the large scale production of microfilters and the effect of single event burnouts of high power semiconductors and the (iii) therapy of eye tumors with energetic protons.

Neutron-induced single event burnout in high voltage electronics

Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3000 V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

Predictions and observations of SEU rates in space

This paper summarizes the available data on the observation and prediction of SEU rates in space. It considers three questions: 1. How good can a prediction be? 2. How bad can a prediction be? 3. How does the quality of the prediction depend on the type of orbit? The paper considers one hundred and twenty-six reports of predicted and observed rates. These include updated predictions for the CRRES devices. The analysis then excludes solar particle events, single event burnout, cases with poor statistics, and cases that are essentially duplicates; leaving 77 comparisons. The heavy ion predictions based on the CREME environments and the proton predictions based on the AP8 environments are both very successful for their basic environments, but are less accurate for low earth orbits (LEO). The quality of the results depends strongly on whether the predictions are based on tests with flight parts or with generic parts. The quality also depends on the use of the proper shielding around the part. The results appear consistent with suggested modifications in these environments based on recent space measurements. The methods that are used for upset rate predictions appear to be adequate for the current generation of devices.

First observation of proton induced power MOSFET burnout in space: the CRUX experiment on APEX

Ground testing has shown that power MOSFETs are susceptible to burnout when irradiated with heavy ions and protons. Satellite data from the Cosmic Ray Upset Experiment (CRUX) demonstrate that single event burnouts (SEBs) on 100-volt and 200-volt power MOSFETs can and do occur in space. Few SEBs occurred on the 100-volt devices, all at L/sup 1/>3. The 200-volt devices experienced many SEBs at L<3 when drain-to-source voltage (V/sub D-S/) was greater than 85% of maximum rated voltage. CRUX flight lot devices were ground tested with protons. The SEB rates calculated with the cross-sections from the ground tests show close agreement with the measured rates.

Modern applications of high energy ion beams: from “single-event burnout” to human eye cancer treatment

Energetic ion beams, originally the domain of nuclear physics, become increasingly important tools in many other fields of research and development. The choice of ion species and ion energy allows an enormously wide variation of the penetration depth and of the amount of the electronic stopping power. These features are utilized to modify or damage materials and living tissues in a specific way. Materials modification with energetic ion beams is one of the central aims of research and development at the ion beam laboratory, ISL-Berlin, a center for ion-beam applications at the Hahn-Meitner-Institut Berlin. In particular, energetic protons will be used for eye cancer treatment. Selected topics such as the “single-event burnout” of high power diodes and the eye cancer therapy setup will be presented in detail.

SEGR and SEB in n-channel power MOSFETs

For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techniques are suggested.

First observations of power MOSFET burnout with high energy neutrons

Single event burnout was seen in power MOSFETs exposed to high energy neutrons. Devices with rated voltage /spl ges/400 volts exhibited burnout at substantially less than the rated voltage. Tests with high energy protons gave similar results. Burnout was also seen in limited tests with lower energy protons and neutrons. Correlations with heavy-ion data are discussed. Accelerator proton data gave favorable comparisons with burnout rates measured on the APEX spacecraft. Implications for burnout at lower altitudes are also discussed.

Single-event effect ground test issues

Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3) bit errors in photonic devices. These characterizations can then be used to generate predictions of device performance in the space radiation environment. This paper provides a general overview of ground-based SEE testing and examines in critical depth several underlying conceptual constructs relevant to the conduct of such tests and to the proper interpretation of results. These more traditional issues are contrasted with emerging concerns related to the testing of modern, advanced microcircuits.

A review of the techniques used for modeling single-event effects in power MOSFETs

Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFETs are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. This paper presents a review of these models and explains their merits and limitations. New results are included to illustrate the approaches.

Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs

Numerous studies have revealed that vertical power MOSFETs are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided.

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p/sup +/ plug modification approach for SEE hardening of power MOSFETs is validated with simulations on actual device structures.

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigated through current duration observations. The effect of the ion's impact position is experimentally pointed out. Finally, further investigation with 2D MEDICI simulations show that the different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering. >

Single event burnout of power MOSFETs caused by nuclear reactions with heavy ions

Single event burnout (SEB) phenomenon of power MOSFETs caused by nuclear reactions with incident heavy ions has been probed experimentally. 520 MeV Kr and 3536 MeV Xe ions having the same LET were used as incident ions for the experiment. The observed SEB threshold voltage was quite different for both ions. Detailed analysis revealed that the Xe ions can produce excess charge as a result of nuclear reactions with Si atoms. The result suggests that usual SEB immunity test as a function of LET is not adequate for high voltage devices that have much larger sensitive volume.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>