MgO Single Crystal Substrates Research Articles

Formation of FePt–MgO Nanocomposite Films at Reduced Temperature

The MgO nanolayer effect on the microstructure and magnetic characterizations added into Fe/Pt stacked films directly deposited onto MgO (001) single-crystal substrates at the reduced temperature of 380 °C using electron-beam technology was investigated in this present work. The nanograin isolation and exchange decoupling for the FePt–MgO system is attributed to the magnetic FePt isolated grains that originate from MgO atoms with a spreading behavior mostly along grain boundaries owing to its weaker surface energy than that of a single Fe or Pt element. The grain and domain size decreased when the MgO nanolayer was applied due to the interpenetration of MgO and created a strain-energy variation at the MgO/FePt interface. Measuring angular-dependent coercivity indicates a general trend of a domain-wall motion, and changes to the rotation of the reverse-domain model occurred as the MgO nanolayers were added into FePt films. The intergrain interaction is confirmed by the Kelly–Henkel plot, which shows that there is strong intergrain exchange coupling (positive δM type) between neighboring grains in the continuous Fe/Pt stacked films without MgO nanolayers. In addition, a negative δM type occurred when the Fe/Pt stacked films were added into MgO nanolayers, showing that the MgO nanolayer can be applied to adjust the force of intergrain exchange coupling between the adjacent FePt nanograins, and the addition of MgO nanolayers change into magnetic decoupling; thus, there was a formed dipole interaction in our claimed FePt–MgO composite structure of stacked ultrathin films at a reduced temperature of 380 °C.

Structural and magnetic properties of FeRh films grown on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) substrates

FeRh thin films are grown on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) single-crystal substrates at 600 °C by dc magnetron sputtering and post-annealed at the same temperature for 1 h. Effect of substrate orientation on structural and magnetic properties of FeRh films is studied using X-ray diffraction (Cu-Kα and synchrotron radiation), temperature, and field dependent magnetization measurements. FeRh(0 0 1), (1 1 2), (0 1 1) orientated films with CsCl ordering are obtained on MgO(0 0 1), MgO(0 1 1) and MgO(1 1 1) substrates, respectively. Epitaxial quality of FeRh(0 0 1) is relatively better than FeRh(1 1 2) and FeRh(0 1 1) films. The FeRh(0 1 1) film grows on two orientation relationships: Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS). Temperature-dependent out-plane XRD measurements indicate an increase in c-parameter ∼0.56% to 0.62% across the AF-FM phase transition. The c/a ratio indicate that FeRh(0 0 1) film has in-plane compressive strain, while FeRh(1 1 2) and FeRh(0 1 1) films have tensile strain. The c/a ratio and temperature-dependent magnetization measurements (M–T) indicate that AF-FM phase transition can be tuned by appx. 52 K (388 K to 440 K) by variation of lattice strain at FeRh/MgO interface. Thermal hysteresis of appx. 12.8 K, 17 K and 22.9 K is observed for FeRh(0 0 1), FeRh(1 1 2) and FeRh(0 1 1) thin films. Larger thermal hysteresis is expected due to relatively poor epitaxial quality of the FeRh(1 1 2) and FeRh(0 1 1) films as compared to FeRh(0 0 1) film. The larger remnant FM component is observed in nominal AF state (room temperature) in all the samples, and is expected due to combined effect of composition inhomogeneity, substrate-induced strain and defects.

Superconductivity in Ti2O3 films on MgO substrate

Transition metal oxide films exhibit strong structure-property correlations, which foster innovative physical properties that are not present in their bulk counterparts. This study has successfully prepared different thickness-dependent epitaxial Ti2O3 thin films on MgO (001) single crystal substrate using the pulsed laser deposition method. The results reveal a strong correlation between the crystal structure and superconductivity in Ti2O3 thin films. Synchrotron x-ray diffraction and high resolution transmission electron microscope measurements confirmed that the appearance of superconductivity is closely related to the coexistence of the cubic-Ti2O3 (γ-Ti2O3) and orthorhombic-Ti2O3 (o-Ti2O3) phases. Superconductivity is absent in 80 nm film, which exhibits only a single γ-Ti2O3 phase. The highest superconducting transition temperature (T C) ∼ 7.2 K is achieved in 1200 nm film, which shows about 55% o-Ti2O3 phase and 45% γ-Ti2O3 phase. Room temperature Raman data suggest that E g modes at ∼330 and ∼430 cm−1 may associate with superconductivity, and an E g mode at ∼660 cm−1 is related to the insulating behavior observed in 80 nm film.

Enhanced energy storage properties of epitaxial (Ba0.955Ca0.045)(Zr0.17Ti0.83)O3 ferroelectric thin films

Abstract(Ba0.955Ca0.045)(Zr0.17Ti0.83)O3 [BCZT] epitaxial were grown on La0.67Sr0.33MnO3 (LSMO)‐coated (100)‐oriented MgO single crystal substrates by the pulsed laser deposition (PLD) technique. Herein, we report crystal structure, ferroelectric, piezoresponse force microscopy (PFM), and energy storage properties near the morphotropic phase boundary (MPB) composition of [Ba0.850Ca0.15Zr0.1Ti0.90O3] solid solution. Epitaxial growth of the films was confirmed using X‐ray diffraction (XRD) spectra. Room‐temperature Raman spectroscopy confirms perovskite phase of BCZT films. Room‐temperature polarization‐electric field (P‐E) loops confirm the ferroelectric nature of BCZT films. Ferroelectric hysteresis loops demonstrate high saturation polarization (Pmax ~ 97.96 μC/cm2) and remanant polarization (Pr ~ 70.1 μC/cm2) at an applied maximum electric field ~2.77 MV/cm. The optimized BCZT epitaxial thin films have shown moderate dielectric properties at different measured frequencies (10‐100 kHz). Nanoscale piezoresponse force microscopy (PFM) images demonstrate switchable ferroelectric polarization of these thin films above ±9 V of dc voltage applied. Energy storage properties measured from ferroelectric loops revealed a high discharge curve energy density ~27.5 J/cm3 at a maximum electric field of 2.77 MV/cm. Epitaxial‐grown BCZT films are suitable candidate materials for capacitor applications.

Magnetoelastic constant of thin films determined by a four-point bending apparatus

We have developed a method to variably induce lattice strains and to quantitatively evaluate the induced magnetic anisotropy. Both tensile and compressive strains were introduced into epitaxial films of cobalt ferrite (CFO) grown on a single crystal MgO(001) substrate using a four-point bending apparatus made of a plastic material fabricated by a 3D printer. The change in magnetic anisotropy due to bending strain can be measured quantitatively by using the conventional magneto-torque meter. The strain-induced magnetic anisotropy increased with the tensile strain and decreased with the compressive strain as expected from a phenomenological magnetoelastic theory. The magnetoelastic constant obtained from the changes in bending strains shows quantitatively good agreement with that of the CFO films with a uniaxial epitaxial strain. This signifies that the magnetoelastic constant can be evaluated by measuring only one film sample with strains applied by using the bending apparatus.

Au(001) Thin Films: Impact of Structure and Mosaicity on the Oxygen Reduction Reaction in Alkaline Medium

Au(001) thin films with thickness varying from ca. 25 to 83 nm were deposited on MgO(001) substrates using pulsed laser deposition. Epitaxial growth of (001) Au on the (001) MgO single-crystal substrate was observed with a Au(001)[010]//[010](001)MgO cube-on-cube epitaxial relationship for substrate temperature ≤200 °C. Detailed X-ray reciprocal space mapping (RSM) analysis and atomic force microscopy (AFM) imaging of films with different thicknesses were conducted. There is a nonmonotonic dependence of both the in-plane and out-of-plane lattice parameters with the films’ thickness, while the lateral coherence length increases with the thickness. The maximum tensile strain measured was 0.3% for 65 nm thick Au(001) film. Cyclic voltammetry (CV) in acidic and alkaline media and Pb underpotential deposition (Pb UPD) measurements were used as fingerprints to assess the structure of the surface. All films exhibited the characteristic response of Au(001) single-crystal surfaces, although with some differences in the potential region between 0.7 and 1.2 V vs reversible hydrogen electrode (RHE), which corresponds to the adsorption and partial discharge of OH– anions at the electrode surface. Since epitaxial Au(001) thin films do not lend themselves to steady-state voltammetry with rotating disks or microelectrodes due to their square shape and the insulating nature of MgO substrates, the electrocatalytic activity of the films for the oxygen reduction reaction (ORR) in the alkaline electrolyte was assessed by sampled current voltammetry. It was shown that both the onset potential (Eonset) and the half-wave potential (E1/2) for the ORR do not show any dependence on strain but rather become less negative (more active) with an increase of the lateral coherence length. These data are rationalized in the context of recent density functional theory (DFT) calculations and the mechanisms governing the ORR in alkaline electrolytes.

Magnetic anisotropy and reversal in epitaxial FeGa/IrMn bilayers with different orientations of exchange bias

Epitaxial FeGa/IrMn bilayers with exchange biases along the FeGa[100] and [110] directions are prepared on MgO(001) single crystal substrates by magnetron sputtering through controlling the orientation of the external field <i>in situ</i> applied during growth. The effect of the exchange bias orientation on the magnetic switching process and the magnetic switching field are studied. The X-ray <i>φ</i>-scan indicates that the FeGa layer is epitaxially grown with a 45° in-plane rotation on the MgO(001) substrate along the FeGa(001)[110] direction and the MgO(001)[100] direction. The measurements of the angular dependence of the ferromagnetic resonance field and the corresponding fitting to the Kittel equation show that the samples have a superposition of fourfold symmetric magnetocrystalline anisotropy <inline-formula><tex-math id="M4">\begin{document}$ {K}_{1} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M4.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M4.png"/></alternatives></inline-formula>, unidirectional magnetic exchange bias anisotropy <inline-formula><tex-math id="M5">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M5.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M5.png"/></alternatives></inline-formula>, and uniaxial magnetic anisotropy <inline-formula><tex-math id="M6">\begin{document}$ {K}_{\mathrm{u}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M6.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M6.png"/></alternatives></inline-formula> with configuration of <inline-formula><tex-math id="M7">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[100\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M7.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M7.png"/></alternatives></inline-formula> or <inline-formula><tex-math id="M8">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[110\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M8.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M8.png"/></alternatives></inline-formula>. The combined longitudinal and transverse magneto-optical Kerr effect measurements show that sample with <inline-formula><tex-math id="M9">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[100\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M9.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M9.png"/></alternatives></inline-formula> exhibits square loops, asymmetrically shaped loops, and one-sided two-step loops in different external magnetic field directions. In contrast, the sample with <inline-formula><tex-math id="M10">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[110\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M10.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M10.png"/></alternatives></inline-formula> exhibits one-sided two-step and two-sided two-step loops as the magnetic field orientation changes. Because the <inline-formula><tex-math id="M11">\begin{document}$ {K}_{1} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M11.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M11.png"/></alternatives></inline-formula> is superimposed by <inline-formula><tex-math id="M12">\begin{document}$ {K}_{\mathrm{u}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M12.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M12.png"/></alternatives></inline-formula> and <inline-formula><tex-math id="M13">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M13.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M13.png"/></alternatives></inline-formula>, the in-plane fourfold symmetry of the magnetic anisotropy energy is broken. The local minima are no longer strictly along the in-plane <inline-formula><tex-math id="M14">\begin{document}$ \left\langle{100}\right\rangle $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M14.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M14.png"/></alternatives></inline-formula> directions, but make a deviation angle which depends on the relative orientation and strength of magnetic anisotropy. A model based on the domain wall nucleation and propagation is proposed with considering the different orientations of <inline-formula><tex-math id="M15">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M15.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M15.png"/></alternatives></inline-formula>, which can nicely explain the change of the magnetic switching route with the magnetic field orientation and fit the angular dependence of the magnetic switching fields, indicating a significant change of domain wall nucleation energy as the orientation of <inline-formula><tex-math id="M16">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M16.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M16.png"/></alternatives></inline-formula> changes.

The phase composition and structure of the BiFeO-=SUB=-3-=/SUB=- film grown on MgO(001) substrate by high frequency cathode deposition in oxygen atmosphere

The crystal structure and Mossbauer spectroscopy studies results for BiFeO3 film growth on the MgO(001) single crystal substrate are present in the paper. It been shown that film have high crystal perfection and low defectiveness which results in appearing of narrow lines during the theta-2theta and φ scanning and the small (lower than 0.7o) disorientation of film and substrate crystal axes. It is been revealed that unit cell of BiFeO3/MgO(001) heterostructure possess monoclinic symmetry and deformation of unit cell is negligible. The Mossbauer study shows that magnetic subsystem of film has spatial spin-modulated structure with zero value of anharmonicity parameter (m). This indicate that at room temperature the magnetic anisotropy changes from the "easy axis" type to "easy plane" type. Keywords: thin films, bismuth ferrite, Mossbauer effect.

Фазовый состав и структура пленки BiFeO-=SUB=-3-=/SUB=-, выращенной на подложке MgO(001) методом ВЧ-катодного распыления в атмосфере O-=SUB=-2-=/SUB=-

The crystal structure and Mossbauer spectroscopy studies results for BiFeO3 film growth on the MgO(001) single crystal substrate are present in the paper. It been shown that film have high crystal perfection and low defectiveness which results in appearing of narrow lines during the θ-2θ and φ scanning and the small (lower than 0.7°) disorientation of film and substrate crystal axes. It is been revealed that unit cell of BiFeO3/MgO(001) heterostructure possess monoclinic symmetry and deformation of unit cell is negligible. The Mossbauer study shows that magnetic subsystem of film has spatial spin-modulated structure with zero value of anharmonicity parameter (m). This indicate that at room temperature the magnetic anisotropy changes from the "easy axis" type to "easy plane" type.

Giant Wrinkles on the Surface of Epitaxial BaTiO3 Thin Films with Drastic Shrinkage during Transfer from a MgO(100) Single-Crystal Substrate to a Flexible Polyethylene Terephthalate Sheet.

The transfer of ferroelectric and piezoelectric BaTiO3 epitaxial thin films from an original MgO(100) single-crystal substrate to a polyethylene terephthalate (PET) sheet has been studied to fabricate flexible epitaxial functional oxides. The outline of our previous transfer process is as follows: the epitaxial BaTiO3 thin films were deposited on the MgO(100). Then, the surface of the BaTiO3 was adhered onto a PET sheet. Finally, only the MgO(100) substrate was dissolved in a phosphoric aqueous solution, which resulted in the transfer of the epitaxial BaTiO3 thin film from the MgO(100) to a PET sheet. To establish this transfer process, our aim was to prevent any damage, such as cracks and exfoliation, during the transfer of the epitaxial functional oxides. We found that a Pt buffer layer with a ductile nature was effective for improving the quality of transferred epitaxial BaTiO3 thin films. Moreover, the epitaxial BaTiO3 thin films showed a drastic shrinkage of ca. 10%. The surfaces of the shrunk, epitaxial BaTiO3 thin films showed giant wrinkles with a micrometer-order amplitude and a 10-μm-order periodicity without any damage. The epitaxial BaTiO3 thin films with giant wrinkles, accompanied by drastic shrinkage, are similar to the thin films that are coated on a pre-stretched elastomer, which is one of the fabrication processes of stretchable devices.

Comparative study of Fe(Se,Te) thin films on flexible coated conductor templates and single-crystal substrates

In this paper, we compare epitaxial Fe(Se,Te) thin films grown by pulsed laser deposition on CaF2, SrTiO3, MgO single crystals as well as on different metallic templates having a CeO2 based top surface. In particular, we performed a detailed structural and superconducting analysis. X-ray diffraction studies showed highly textured films on all templates. The superconducting transition temperatures are between 21 K and 14 K for Fe(Se,Te) films on CaF2 and on MgO single-crystal substrates, respectively, whereas films on the metal templates show T c values up to 18 K. The critical current density (J c) was determined from magnetization loops in fields up to 7 T. Calculations in the framework of the extended critical state model showed J c values over 2 MA cm−2 and 0.9 MA cm−2 at 5 K in self-field on single-crystal substrates and metal templates substrates, respectively. Detailed transmission electron microscopy studies reveal smooth layers on all templates. Whereas small defects were found in films on single crystals, pronounced grain boundaries with higher misorientation angle were visible in the layers on metallic templates.

Efficient spin-wave transmission in epitaxial thin films of defect spinel γ-Fe2−xAlxO3

The realization of ultra-low energy consumption spin wave device applications requires a material that can efficiently propagate the spin waves. Spinel-type ferrite is a promising insulator from the perspective of application in magnonic devices owing to its good crystal compatibility. In this study, thin films of spinel γ-Fe2−xAlxO3 (0 ≤ x ≤0.5) are fabricated on single-crystal MgO substrates through pulsed laser deposition. High crystalline quality and room temperature ferrimagnetism are observed in all the films. Spin wave propagation is observed in γ-Fe2−xAlxO3 films, and it is found that the spin-wave transmission properties significantly correlate with the crystallinity and magnetization of the films. The γ-Fe1.85Al0.15O3 thin film represents an excellent compromise between a sufficiently high spin-wave amplitude and long propagation distance. These results indicate that the γ-Fe2−xAlxO3 thin film is a highly promising candidate for application in spin-wave-based computing devices in the future.

Twin-boundary engineering and thickness effect on strontium-barium niobate thin films on MgO substrate

The Sr0.5Ba0.5Nb2O6 (SBN50) films with different thicknesses synthesized by a high-current discharge rf-sputtering in an oxygen atmosphere. All synthesized films have the structure of tetragonal tungsten bronze. The dependence of the unit cell parameters of the film material demonstrates a size effect, the magnitude of which is comparable to the distortions resulting from the ferroelectric relaxor phase transformation of SBN crystals of the same composition. The twinning of the same type is observed in all films when the twinned film components are rotated relative to each other by 36.8 degrees around the fourth-order rotational axis. The orientation of the films relative to the substrate can be written as [001]SBN∥[001]MgO; [100]SBN+∥[310]MgO and [100]SBN−∥[31¯0]MgO, where the sign "+" and "–" marks the twin components. It is noteworthy that such an orientation of the film relative to the substrate corresponds to the maximum possible tensile stress of heteroepitaxial films acting from the MgO single crystal substrate. This type of twinning is not typical for SBN50 films on MgO grown by other synthesis methods. The appearance of this unusual type of twinning is associated with the peculiarities of synthesis. At the initial moment of sputtering, the substrate is additionally heated by the sputtered substance’s plasma. The substrate temperature can also be used in other synthesis methods to control twinning and strain in barium strontium niobate thin films.

Analyses of Substrate-Dependent Broadband Microwave (1–40 GHz) Dielectric Properties of Pulsed Laser Deposited Ba0.5Sr0.5TiO3 Films

Ba0.5Sr0.5TiO3 (BST-0.5) thin films (600 nm) were deposited on single crystal MgO, SrTiO3 (STO), and LaAlO3 (LAO) substrates by pulsed laser deposition at an oxygen partial pressure of 80 mTorr and temperature of 720 °C. X-ray diffraction and in situ reflection high-energy electron diffraction routinely ascertained the epitaxial quality of the (100)-oriented nanocrystalline films. The broadband microwave (1–40 GHz) dielectric properties were measured using coplanar waveguide transmission line test structures. The out-of-plane relative permittivity (ε⏊/) exhibited strong substrate-dependent dielectric (relaxation) dispersions with their attendant peaks in loss tangent (tanδ), with the former dropping sharply from tens of thousands to ~1000 by 10 GHz. Although homogeneous in-plane strain (ϵǁ), enhances ε⏊/ with εMgOBST−0.5⏊/>εSTOBST−0.5⏊/>εLAOBST−0.5⏊/ at lower frequencies, two crossover points at 8.6 GHz and 18 GHz eventually change the trend to: εSTOBST−0.5⏊/>εLAOBST−0.5⏊/>εMgOBST−0.5⏊/. The dispersions are qualitatively interpreted using (a) theoretically calculated (T)−(ϵǁ) phase diagram for single crystal and single domain BST-0.5 film, (b) theoretically predicted ϵǁ-dependent, ε⏊/ anomaly that does not account for frequency dependence, and (c) literature reports on intrinsic and extrinsic microstructural effects, including defects-induced inhomogeneous strain and strain gradients. From the Vendik and Zubko model, the defect parameter metric, ξs, was estimated to be 0.51 at 40 GHz for BST-0.5 film on STO.

Linear and Nonlinear Optical Properties of Vanadium Pentoxide Films Prepared by Pulsed-Laser Deposition

Well-crystallized vanadium pentoxide V2O5 thin films are fabricated on MgO single crystal substrates by using pulsed-laser deposition technique. The linear optical transmission spectra are measured and found to be in a wavelength range from 300 to 800 nm; the data are used to determine the linear refractive index of the V2O5 films. The value of linear refractive index decreases with increasing wavelength, and the relationship can be well explained by Wemple’s theory. The third-order nonlinear optical properties of the films are determined by a single beam z-scan method at a wavelength of 532 nm. The results show that the prepared V2O5 films exhibit a fast third-order nonlinear optical response with nonlinear absorption coefficient and nonlinear refractive index of 2.13 × 10−10 m/W and 2.07 × 10−15 cm2/kW, respectively. The real and imaginary parts of the nonlinear susceptibility are determined to be 3.03 × 10−11 esu and 1.12 × 10−11 esu, respectively. The enhancement of the nonlinear optical properties is discussed.

Linear and Nonlinear Optical Properties of Vanadium Pentoxide Films Prepared by Pulsed-Laser Deposition

Well-crystallized vanadium pentoxide V2O5 thin films are fabricated on MgO single crystal substrates by using pulsed-laser deposition technique. The linear optical transmission spectra are measured and found to be in a wavelength range from 300 to 800 nm; the data are used to determine the linear refractive index of the V2O5 films. The value of linear refractive index decreases with increasing wavelength, and the relationship can be well explained by Wemple’s theory. The third-order nonlinear optical properties of the films are determined by a single beam z-scan method at a wavelength of 532 nm. The results show that the prepared V2O5 films exhibit a fast third-order nonlinear optical response with nonlinear absorption coefficient and nonlinear refractive index of 2.13 × 10−10 m/W and 2.07 × 10−15 cm2/kW, respectively. The real and imaginary parts of the nonlinear susceptibility are determined to be 3.03 × 10−11 esu and 1.12 × 10−11 esu, respectively. The enhancement of the nonlinear optical properties is discussed.

Nd-doped ZnO films on (100) MgO substrate: From metal to semiconductor

We report a wide range of electric and magneto-transport properties of epitaxial Nd-doped ZnO thin films grown on (100) MgO single crystal substrate by pulsed-laser deposition under 10−2 mbar high oxygen pressure as a function of the growth temperature Tg. The classical (001) texture of the ZnO wurtzite phase is present in all films whatever the growth temperature, while for Tg lower than 500 °C an additional epitaxial (100) texture is observed. These structural changes are accompanied by drastic modifications of the charge transport mechanisms. For Tg = 300 °C, the films behave as a metal from 300 to 275 K, from which temperature a metal-insulator transition occurs. The electrical behaviour between 275 and 50 K is described by the quantum correction to conductivity theory in disordered systems and comforted by magneto-resistance data. For Tg = 500 °C, a semiconducting behavior with partial metallic character is evidenced, while for Tg = 700 °C, pure semiconductor characteristics are obtained with variable-range hopping conductivity at low temperatures. Magneto-resistance measurements indicate that Nd3+ ions act below 150 K as scattering centers for electrons only for films grown at 300 °C and 500 °C. These observations have to be related to the incorporation of Nd3+ into the ZnO films during growth. The evolution from a metallic film to a semiconducting one, while acting on the single growth temperature parameter, opens new perspective in the context of charge transport.

Radiation response on the Nb/MgO interface with different interface angles

Abstract Heterophase interfaces have been considered as effective sinks for radiation induced defects and impurities in nuclear materials. However, the quantitative correlation of interface structure and the ability of interface sinking radiation damage is still largely elusive. In this study, we found that the interface angle plays important role in determining interface’s sink ability to radiation damage. Their correlations were investigated by performing He ion irradiation on the Nb film with column grain structure grown on single crystal MgO(1 0 0) substrate and we found that the sink efficiency of Nb/MgO interface is related to the interface angle. Considering the dependence of a He atom’s diffusion direction on interface angle, one-dimensional linear differential equation model was corrected by a structure factor to understand the mechanisms for the influence of interface angle on the sink efficiency of Nb/MgO interfaces, and the sink efficiencies of Nb/MgO interface with different interface angles were well predicted by the corrected model. This study could provide novel insights and mechanisms for further understanding the role of interface structure in enhancing radiation tolerance.

Dielectric properties and switching processes of ferroelectric superlattices

We review dielectric properties of BaZrO3/BaTiO3 (BZ/BT) superlattices deposited on a single-crystal MgO substrate, and having a period of 13.32 nm. These superlattices have specific properties distinguishing them from BZ or BT bulk materials, and from thin films, with a ferroelectric phase transition around 393-395 °?, significantly higher than in bulk samples and thin films of BT, and appearing of second order. The polarization switching occurs in two stages and the precise analysis of experimental data demonstrates that the motion of the domain walls causes the switching processes. We conclude that the mobility of the domain walls decreases on heating. The presence of an internal bias field has been demonstrated and shown to be directed from the superlattice to the substrate, in agreement with an analysis based on the flexoelectric effect. The switching current has been shown to vary in weak fields as 1/E? with the exponent ? much smaller than in thin ferroelectric films. The appearance of the power index ?, which is significantly different from unity, may be due to a decrease in the average value of the switched polarization due to the boundaries between layers of different materials.

Synthesis, Characterization, and Magnetoresistive Properties of the Epitaxial Pd0.96Fe0.04/VN/Pd0.92Fe0.08 Superconducting Spin-Valve Heterostructure.

A thin-film superconductor(S)/ferromagnet(F) F1/S/F2-type Pd0.96Fe0.04(20 nm)/VN(30 nm)/Pd0.92Fe0.08(12 nm) heteroepitaxial structure was synthesized on (001)-oriented single-crystal MgO substrate utilizing a combination of the reactive magnetron sputtering and the molecular-beam epitaxy techniques in ultrahigh vacuum conditions. The reference VN film, Pd0.96Fe0.04/VN, and VN/Pd0.92Fe0.08 bilayers were grown in one run with the target sample. In-situ low-energy electron diffraction and ex-situ X-ray diffraction investigations approved that all the Pd1−xFex and VN layers in the series grew epitaxial in a cube-on-cube mode. Electric resistance measurements demonstrated sharp transitions to the superconducting state with the critical temperature reducing gradually from 7.7 to 5.4 K in the sequence of the VN film, Pd0.96Fe0.04/VN, VN/Pd0.92Fe0.08, and Pd0.96Fe0.04/VN/Pd0.92Fe0.08 heterostructures due to the superconductor/ferromagnet proximity effect. Transition width increased in the same sequence from 21 to 40 mK. Magnetoresistance studies of the trilayer Pd0.96Fe0.04/VN/Pd0.92Fe0.08 sample revealed a superconducting spin-valve effect upon switching between the parallel and antiparallel magnetic configurations, and anomalies associated with the magnetic moment reversals of the ferromagnetic Pd0.92Fe0.08 and Pd0.96Fe0.04 alloy layers. The moderate critical temperature suppression and manifestations of superconducting spin-valve properties make this kind of material promising for superconducting spintronics applications.