Simulation Of Electrical Characteristics Research Articles

Optimization of ITO/V2O5/Alq3/TPBi/BPhen/LiF/Al Layers Configuration for OLED and Study of Its Optical and Electrical Characteristics

Nowadays, OLEDs have shown aesthetic potential in smart cards, sensor displays, other electronic devices, sensitive medical devices and signal monitoring etc. due to their wide range of applications like low power consumption, high contrast ratio, speed highly electroluminescent, wide viewing angle and fast response time. In this paper, a highly efficient organic LED ITO/V2O5/Alq3/TPBi/BPhen/LiF/Al with low turn-on voltage and high optically efficiency is presented including electrical and optical characteristics. The simulation of electrical characteristics like current versus applied voltage, current density versus applied voltage, recombination prefactor versus excess carrier density characteristics and optical characteristics like light flux versus current density, light flux versus applied voltage and optical efficiency versus applied voltage has been explained. The physical design, working principle and thickness of different layers along with the process of formation of singlet and triplet excitons are discussed in detail. Here double electron transport layer (ETL), cathode layers are used to enhance the electrical and optical efficiency of OLED. The operating voltage is found to be ~ 3.2 V for the ITO/V2O5/Alq3/TPBi/BPhen/LiF/Al heterostructure based OLED. The designed organic LED has achieved the maximum optical efficiency at 3 V.

High-k/InGaAs interface defects at cryogenic temperature

Oxide defects in the high-k/InGaAs MOS system are investigated. The behaviour of these traps is explored from room temperature down to 10 K. This study reveals that the exchange of free carriers between oxide states and either the conduction or the valence band is strongly temperature dependant. The capture and emission of electrons is strongly suppressed at 10 K as demonstrated by the collapse of the capacitance frequency dispersion in accumulation for n-InGaAs MOS devices, though hysteresis in the C-V sweeps is still present at 10 K. Phonon assisted tunnelling processes are considered in the simulation of electrical characteristics. The simulated data match very well the experimental characteristics and provide energy and spatial mapping of oxide defects. The multi phonon theory also help explain the impedance data temperature dependence. This study also reveals an asymmetry in the free carrier trapping between n and p type devices, where hole trapping is more significant at 10 K.

The method of calculating the design parameters of a collinear serial antenna using the dispersion characteristics of the retarding system

The paper presents a technique for analyzing the electrical characteristics of series-type collinear antennas made according to the Franklin scheme, which are intended for use in radio communication systems with moving objects as basic or subscriber antenna-feeder devices. Collinear antennas belong to omnidirectional type antennas and allow to significantly increase the amplification factor in comparison with already existing types of antennas of a similar type, which is what attracts antenna technology developers today. The main element of a series-type collinear antenna is a phase-shifting device that determines both the performance of the antenna and its electrical characteristics. The most widely used phase-shifting devices were inductive chokes – a section of conductor of a certain length rolled into a spiral. The proposed engineering method of calculating the parameters of the inductive choke allows you to quickly and accurately adjust its characteristics with the calculation of the necessary phase shift. This approach takes into account the physical parameters of the conductor material and the geometry of the spiral conductor, which greatly simplifies the engineering process of developing collinear antennas. The obtained results of simulation of electrical characteristics confirm the effectiveness of the proposed method. A significant increase in the amplification factor compared to the existing types of antennas and compliance of the electrical characteristics with the specified parameters was revealed. The work has an important contribution to the development of antenna technology and has practical application in radio communication systems with moving objects. The proposed method of calculating the parameters of the inductive choke can be used by antenna developers to increase the productivity and efficiency of their radio communication system.

Novel Channel-First Fishbone FETs With Symmetrical Threshold Voltages and Balanced Driving Currents Using Single Work Function Metal Process

In this article, one feasible fabrication approach for novel fishbone FETs using the channel-first and single work function metal (sWFM) processes is proposed and investigated by 3-D technical computer-aided design (TCAD) simulations. Through a small modification on the fabrication process of general gate-all-around (GAA) nanosheet FETs (NSFETs), the special fishbone-like channel composed of vertically stacked Si NSs and sandwiched SiGe nano-fins is experimentally demonstrated by the channel-first process. The simulated electrical characteristics show that the width of the nano-fins should be within 5 nm for a better gate control. Unlike traditional NSFETs, symmetrical threshold voltages ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}\text{s}$ </tex-math></inline-formula> ) for n-type and p-type fishbone FETs can be achieved by using a sWFM, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\text {th}}$ </tex-math></inline-formula> is optimized by 99.26% compared with that of NSFETs. Meanwhile, it is also found that the SiGe nano-fins contribute more driving current for p-type devices. Therefore, the proposed fishbone FETs with sWFM not only exhibit significantly enhanced driving current but also provide good balance between the performances of n-type and p-type fishbone FETs with a little extra process cost.

Techno-economic impacts of floating PV power generation for remote coastal regions

The Government of Bangladesh (GOB) has set a goal to produce 6000 MW of electricity solely from solar Photovoltaic (PV) to ensure energy usage and sustainable development for every region by the year 2041. To meet this target, we have proposed a recently innovated floating PV (FPV) fed 1.4 MW capacity mini-grid system for the remote western coastal region of the country. Considering various practical load profiles, the paper contains an elaborate simulation of electrical characteristics for the modeled supply system. The simulation results show an excellent agreement with different levels of desired voltage, current, and power. Then, in-depth techno-economic and environmental analyses are presented to address the feasibility and benefit of the mini-grid. The optimum Cost of Energy (COE) from the generation facility is evaluated as 18.29 US cents which is consistent with the current tariff. We have estimated that 2500 households and 120 Electric-Vehicle (EV) scooters can save an emission of 228 and 466.56 metric tons, respectively, of Carbon Dioxide (CO2) per year. Finally, an experimental PV generation-based case study is demonstrated to emphasize the techno-economic impacts of the proposed mini-grid. For the electrical characteristics and techno-economic simulation, we have adopted MATLAB/Simulink and HOMER Pro software, respectively.

Electrical Model for Complex Surface DBD Plasma Sources

Electrical models can play a crucial role in the characterization, design, and definition of optimal operating conditions of nonthermal plasma sources in a wide field of applications. Various electrical models are available from the literature, with most modeling the behavior of volume dielectric barrier discharge (DBD) plasma sources. Although electrical models for surface DBD plasma sources are presented from the plasma actuator community, these models are limited to simple and mostly linear surface DBD plasma sources. This study presents a new electrical model focusing on surface DBD plasma sources with complex electrode designs. The proposed model employs the ratio of the electrode surface into a discharging and nondischarging area to consider complex electrode designs, such as meshed and hexagonal electrodes. Microdischarges during plasma ignition phase have been modeled through the superposition of a discharge current to the displacement current. The proposed electrical model has been validated over a large range of operating conditions. It is shown that the simulated electrical characteristics using the developed model are in reasonable agreement with measurements.

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive investigation and modeling of the impact of defects on the electrical characteristics of InGaN-based LEDs, as a function of the thickness of the quantum well (QW). First, we demonstrate that the density of defects in the active region of III-N LEDs scales with increasing thickness of the InGaN QW. Since device layers with high indium content tend to incorporate more defects, we ascribed this experimental evidence to the increased volume of defects-rich InGaN associated to thicker InGaN layers. Second, we demonstrate that the current–voltage characteristics of the devices are significantly influenced by the presence of defects, especially in the sub turn-on region. Specifically, we show that the electrical characteristics can be effectively modeled in a wide current range (from pA to mA), by considering the existence of trap-assisted tunneling processes. A good correspondence is obtained between the experimental and simulated electrical characteristics (I–V), by using—in the simulation—the actual defect concentrations/activation energies extracted from steady-state photocapacitance, instead of generic fitting parameters.

Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width.

We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, Ge0.95Sn0.05 p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (ION/IOFF) ratio of ∼1.2 × 106, and a high-field effective hole mobility (μeff) of ∼115 cm2/(V s). In addition, we also investigate quantum confinement effects in extremely scaled GeSn nanowires, including threshold voltage (VTH) shift and IOFF reduction with continuous scaling of WNW under 10 nm. The phenomena observed from experimental results are substantiated by the calculation of GeSn bandgap and TCAD simulation of electrical characteristics of devices with sub-10 nm WNW. This study suggests Ge-based nanowire p-FETs with extremely scaled dimension hold promise to deliver good performance to enable further scaling for future technology nodes.

Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm

The optimization of thermophotovoltaic (TPV) cell efficiency is essential since it leads to a significant increase in the output power. Typically, the optimization of In0.53Ga0.47As TPV cell has been limited to single variable such as the emitter thickness, while the effects of the variation in other design variables are assumed to be negligible. The reported efficiencies of In0.53Ga0.47As TPV cell mostly remain < 15%. Therefore, this work develops a multi-variable or multi-dimensional optimization of In0.53Ga0.47As TPV cell using the real coded genetic algorithm (RCGA) at various radiation temperatures. RCGA was developed using Visual Basic and it was hybridized with Silvaco TCAD for the electrical characteristics simulation. Under radiation temperatures from 800 to 2000 K, the optimized In0.53Ga0.47As TPV cell efficiency increases by an average percentage of 11.86% (from 8.5 to 20.35%) as compared to the non-optimized structure. It was found that the incorporation of a thicker base layer with the back-barrier layers enhances the separation of charge carriers and increases the collection of photo-generated carriers near the band-edge, producing an optimum output power of 0.55 W/cm2 (cell efficiency of 22.06%, without antireflection coating) at 1400 K radiation spectrum. The results of this work demonstrate the great potential to generate electricity sustainably from industrial waste heat and the multi-dimensional optimization methodology can be adopted to optimize semiconductor devices, such as solar cell, TPV cell and photodetectors.

Simulation of electrical characteristics of positive glow discharge column in plane channel with longitudinal gas flow and additional gas injection through the side wall

A model of positive glow discharge column in longitudinal flowing glow discharge with additional gas injection through the side wall is proposed. The main flow is pumped through the mesh electrodes located at the beginning and end of the plane discharge chamber. Analytical expressions are obtained for the distribution of the most important electrical characteristics in the discharge region: the electric field strength and the degree of gas ionization.

A Dual-MOS-Triggered Silicon-Controlled Rectifier for High-Voltage ESD Protection

A dual-MOS-triggered silicon-controlled rectifier (DMTSCR) has been firstly developed for high-voltage (HV) electrostatic discharge (ESD) protection. Compared to the reported SCRs with modified structures, the DMTSCR harvests a series of advantages such as a high holding voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{h}$ </tex-math></inline-formula> ), a strong ESD robustness, and a low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{t1}$ </tex-math></inline-formula> , thanks to its embedded structures including a gate-to-VDD PMOS, a gate-grounded NMOS, and a modified SCR. Thus, the DMTSCR has the largest figure of merit as high as 1.8 mA/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}^{2}$ </tex-math></inline-formula> . By further optimizing the layout and the key spacing between the embedded PMOS and NMOS of DMTSCR, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{h}$ </tex-math></inline-formula> increased from 8.4 to 17.4 V, the turn-on resistance remarkably decreased to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.4~\Omega $ </tex-math></inline-formula> , and the turn-on voltage was clamped at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{h}$ </tex-math></inline-formula> . The optimized DMTSCR with a small chip area possesses an ESD robustness of 3000 V evaluated by the human body model. Meanwhile, the operation mechanism simulated by Sentaurus exhibited good agreements with the theoretical circuit analysis, and the simulated electrical characteristics were consistent with those measured from the experimental devices. The layout-optimized DMTSCR with good clamping ability and zero snapback voltage is a promising solution for stacking to meet various HV ESD protection requirements.

Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate

Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects. In this paper, the effects of inhomogeneous biaxial strain in different regions of the AlGaN barrier layer on electrical properties of normally-off HEMTs with p-GaN gate were discussed. The results show that biaxial strain applied in three regions has different influence on transfer, output and breakdown characteristics of the device. The strain applied in region under gate has the most significant impact on threshold voltage and drain saturation current with a decreasing of 39% and an increasing of 97% respectively as the strained lattice constant increases from 3.173061Å to 3.187229Å.While, strain applied between gate and drain electrode can improve the off-state breakdown voltage by 12% with the increasing of strained lattice constant.

Simulation of Electrical Characteristics of Switching Nanostructures "Pt – TiO – Pt" and "Pt – NiO – Pt" with Memory

Simulation of Electrical Characteristics of Switching Nanostructures "Pt – TiO – Pt" and "Pt – NiO – Pt" with Memory

Source-Drain Junction Engineering Schottky Barrier MOSFETs and their Mixed Mode Application

In this paper, a new structure for a silicon on insulator Schottky barrier MOSFET (SOI SB-MOSFET) has been proposed. The simulated device is calibrated with experimental result. Here n + pocket doping segregation in the source and drain side have been used. The simulated electrical characteristics of the proposed device With Source Extension (WSE) and With Source Drain Extension (WSDE) reveal more remarkable reduction in drain induced barrier tunneling (DIBT), high Ion/Ioff and low Subthreshold swing(SS) than conventional device. Furthermore, the effect of varying temperature has been investigated on subthreshold swing for various oxide thickness (Tox) and silicon film thickness (TSi). Moreover, proposed SB-MOSFETs have been used in the inverter circuit, exhibit a high gain (˷12) and Noise Margin (NMH = 0.4 and NML = 0.46).

Simulation of characteristics of microwave transistors with AlGaN heterostructures

In work results of researches in the area of simulation of electrical characteristics of the AlGaN/GaN field-effect transistor are provided. The considerable difference of transport processes in case of the strong and feeble electrical polarization is shown. The role of capture of centers in volume of a buffer layer GaN is analyzed and it is shown that deep interruptions can influence considerably on distribution of electrostatic potential and density of electrons in a buffer layer. In case of high concentration of interruptions there is a sharp lowering of density of the free electrons with increase of distance from the channel, the current density in the depth of a buffer layer decreases.

Research on matching strategy of hybrid power with fuel cell

The hybrid power is an important research in the research field of new energy power system, and its strict operating process and running status influence the performance and life greatly. To aim at the problem, the structure of hybrid power was given out at first. Secondly, the modeling of hybrid power fuel cells was advanced based on electrochemistry. Then the modeling structure, algorithm, and simulation of electrical characteristics of hybrid power fuel cells were particularly presented. Finally, the 1kW experiment of hybrid power fuel cells was finished for the operating and running process. The research result is provided for the suitable engineering model of matching and control of hybrid power system at the view of application.

Simulation of Electrical Characteristics of PERC Solar Cells

In recent years, silicon solar cells have reached efficiencies above 24%, which is ensuring rapid progress in the photovoltaic (PV) market. We review herein recent passivated emitter rear cell (PERC) technology and the influence of the contact resistance and temperature dependence on the output properties by using Silvaco technology computer-aided design (TCAD) tools. This numerical simulation indicates efficiency of 24.82% for the n-type monocrystalline PERC cell, with open-circuit voltage of up to 761 mV. PV parameters, such as the open-circuit voltage (Voc), short-circuit current (Jsc), maximum power (Pmax), fill factor, and efficiency (η), are compared with those of other device architectures.

Computer simulation of electrical characteristics of singlewalled carbon nanotube (9,0) with Stone-Wales defect

In the framework of the density functional theory, using the method of nonequilibrium Green's functions and in the local density approximation, the electrical characteristics of different configurations of a single-walled carbon nanotube with Stone-Wales defects are investigated. The calculation is implemented in the Atomistix ToolKit with Virtual NanoLab program. The current-voltage, dI/dV-characteristics and the density of states of the nanostructures under consideration were calculated. It is shown that the nature of the current flowing through defective carbon nanotubes depends on the extent of the Stone-Wales defects. It was found that a carbon nanotube with two consecutively connected Stone-Wales defects at a bias voltage of ± 2.6 V has a negative differential conductivity of -170 μS. The obtained results can be useful for calculations of new promising electronic devices of nanoelectronics based on a carbon nanotube.

Direct-current glow discharge in neon at cooling

The paper presents the results of the experimental measurement and the simulation of electric characteristics of dc glow discharge with the hollow cathode in neon, carried out during cooling of the discharge to the temperature of liquid nitrogen. The experiments were performed at pressure P = 18–187 Pa and discharge currents I = 0.01–3.5 mA. The behavior of the border of transition to the normal glow discharge during cooling was studied. Cooling in a subnormal discharge mode at constant current led to a change in the discharge regime. Upon cooling, the boundary of the transition to the normal glow discharge shifted to lower current, the electric field in the positive column of discharge and at the boundary of the normal glow discharge increased, but the reduced electric field decreased throughout the entire range of pressure and the discharge current.

Neon dc glow discharge at cryogenic cooling: experiment and simulation

The results of the measurement and simulation of electrical characteristics of neon dc discharge are presented. These results have been obtained in the discharge cooled to the temperature of liquid nitrogen (77 K). The experiments were carried out at a neon pressure of 18–187 Pa and a discharge current of 0.01–3.5 mA. Cooling in the subnormal discharge mode at a constant value of discharge current led to a change in the discharge mode. When cooled, the electric field in the positive column and at the boundary of the transition to the normal discharge increased, and the reduced electric field decreased in all the investigated ranges of discharge current, pressure and neon concentration. The simulation of the positive column, based on the diffusion-drift (fluid) model, has shown that the input in the ionization of processes involving excited atoms increases with decreasing discharge temperature.