Abstract
Simulation of Electrical Characteristics of Switching Nanostructures "Pt – TiO – Pt" and "Pt – NiO – Pt" with Memory
Highlights
At the end of 2008, the discovery of the effect of memrisivity in systems Pt – TiO2 – TinO2n-1 – Pt, predicted back in 1971 by L
It was revealed that in the range of voltages –1.3 V÷1.3 V, a hysteresis appears in the form of eight shaped figure on the current-voltage characteristic of Pt – TiO – Pt nanostructure, and in Pt – NiO – Pt nanostructure, the hysteresis appears in the voltage intervals –1.8 V÷0.8 V and 0.9 V÷1.8 V in the form of two oval-shaped figures connected to a segment
In this work, the basic electric transport characteristics of Pt – TiO – Pt and Pt – NiO – Pt nanocontacts were investigated within the framework of the semi-empirical extended Hückel method
Summary
At the end of 2008, the discovery of the effect of memrisivity in systems Pt – TiO2 – TinO2n-1 – Pt, predicted back in 1971 by L. It became clear that the effect of memrisivity arises in metal-dielectric nanocomposites due to the displacement of charges in a superthin dielectric layer when an electric field is applied. The creation of switches, memory elements, constituent logic elements, oscillators, as well as modules of neural computers is being considered on the basis of memorial constructions [4,5,6,7,8] In this regard, there is an intensive search for new metal-dielectric materials with memristic properties, as well as new models, describing their electrical characteristics [9], [10]. An attempt has been made to determine the main electrical characteristics of nanostructures of the type “Pt – TiO –Pt” and “Pt – NiO – Pt” using the extended Hückel method [16]
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