The nature of the metal/semiconductor (M/S) contact (Ohmic or Schottky) in electronic devices can greatly affect the electronic properties of the component. The effective regulation of Schottky barrier height (SBH) has great importance for the successful operation of any electronic device. This paper demonstrates that the Ti3C2T2/SiC interface can effectively suppress the Fermi level pinning (FLP) effect through van der Waals stacking. By investigating the effects of the most probable C-related defect, namely carbon substitutional doping at silicon sites (CSi defects), on the contact performance of Ti3C2T2/SiC. It is found that CSi defects do not affect the contact type of Ti3C2T2/SiC and have little impact on the tunneling barrier. In addition, the SBH of Ti3C2T2/SiC could be modulated by a vertical electric field, without altering the tunneling barrier. The modulation is also not influenced by the CSi defects. Furthermore, based on the calculated Schottky and tunneling barriers, Ti3C2(OH)2 is the most compatible electrode with 2D SiC among the Ti3C2T2, even in the presence of CSi defects in SiC.
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