To investigate the mechanisms underlying material removal and crater formation on semiconductor silicon in electrical discharge machining (EDM), this study presents a comprehensive thermal-flow-magnetic coupling simulation model, taking into account the synergistic effects of temperature, fluid dynamics and electromagnetic fields. Utilizing the model, the removal dynamics of P-type monocrystalline silicon within a monopulse discharge interval were meticulously simulated. Subsequently, the crater formation mechanism, as well as variations in the temperature and velocity fields, were thoroughly examined. The simulation model’s validity is experimentally confirmed. Findings indicate that an augmentation in pulse duration and thermal energy input precipitates a progressive expansion of the heat-affected zone in silicon. Concurrently, the temperature field’s expanse and the melting-vaporization frontier extend accordingly. The material undergoes instantaneous vaporization upon exposure to the high-temperature heat source. The volumetric expansion of the vapor is substantial, engendering a thermal explosive force that has a significant impact on the molten material. Ejection of material is attributed to the interplay between thermal explosive forces and electromagnetic influences. Experimental observations show that the morphology and dimensions of the simulated crater closely match those of the experimental crater, affirming the model’s capability to elucidate the crater formation mechanism in EDM processes.
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