Silicon Nitride Photonic Integrated Circuits Research Articles

Enabling VCSEL-on-silicon nitride photonic integrated circuits with micro-transfer-printing

New wavelength domains have become accessible for photonic integrated circuits (PICs) with the development of silicon nitride PICs. In particular, the visible and near-infrared wavelength range is of interest for a range of sensing and communication applications. The integration of energy-efficient III-V lasers, such as vertical-cavity surface-emitting lasers (VCSELs), is important for expanding the application portfolio of such PICs. However, most of the demonstrated integration approaches are not easily scalable towards low-cost and large-volume production. In this work, we demonstrate the micro-transfer-printing of bottom-emitting VCSELs on silicon nitride PICs as a path to achieve this. The demonstrated 850 nm lasers show waveguide-coupled powers exceeding 100 µW, with sub-mA lasing thresholds and mW-level power consumption. A single-mode laser with a side-mode suppression ratio over 45 dB and a tuning range of 5 nm is demonstrated. Combining micro-transfer-printing integration with the extended-cavity VCSEL design developed in this work provides the silicon nitride PIC industry with a great tool to integrate energy-efficient VCSELs onto silicon nitride PICs.

Thulium-doped tellurium oxide microring lasers integrated on a low-loss silicon nitride platform

We demonstrate compact, monolithically integrated thulium-doped tellurium oxide microring lasers on a low-loss silicon nitride platform. We observe lasing in the wavelength range of 1815–1895 nm under 1610 nm resonant pumping at varying waveguide-microring gap sizes and on-chip single-sided output powers up to 4.5 mW. The microlasers exhibit thresholds as low as 18 mW (11 mW) and a single-sided slope efficiency as high as 11% (17%) with respect to the pump power coupled into the TeO2:Tm3+-coated Si3N4 bus waveguide (absorbed pump power). These results are a promising development for integrated tellurite glass devices and light sources for the emerging 2-µm band in silicon nitride photonic integrated circuits.

Monolithic integration of laser onto multilayer silicon nitride photonic integrated circuits with high efficiency at telecom wavelength.

We propose a multilayer silicon nitride (SiN) -on-silicon photonic integrated circuit (PIC) platform with a monolithic laser at the C-band. A tapered edge coupler and a meta-structure-based interlayer directional coupler in the platform were designed to realize low-loss broadband laser-to-chip 3D coupling with small footprint. The coupling length of the interlayer directional coupler and the gap between different SiN layers were optimized as 12.7 µm and 1.4 µm. We measured the 1-dB-drop optical operation bandwidth of greater than 76 nm and the coupling loss of 6.1 ± 0.1 dB at 1550 nm for the interlayer directional coupler. The hybrid integration was demonstrated as a proof of concept for monolithic integration of light sources. The butt-coupling loss of 3.7 ± 0.1 dB between an on-chip DFB laser and a SiN edge coupler at 1549.48 nm was achieved. This approach opens the possibility of employing monolithic laser in the silicon photonics platform.

Silicon nitride PIC-based multi-color laser engines for life science applications.

We implement a multi-color laser engine with silicon nitride photonic integrated circuit technology, that combines four fluorophore excitation wavelengths (405 nm, 488 nm, 561 nm, 640 nm) and splits them with variable attenuation among two output fibers used for different microscope imaging modalities. With the help of photonic integrated circuit technology, the volume of the multi-color laser engine's optics is reduced by two orders of magnitude compared to its commercially available discrete optics counterpart. Light multiplexing is implemented by means of a directional coupler based device and variable optical attenuation as well as fiber switching with thermally actuated Mach-Zehnder interferometers. Total insertion losses from lasers to output fibers are in the order of 6 dB at 488 nm, 561 nm, and 640 nm. Higher insertion losses at 405 nm can be further improved on. In addition to the system level results, spectrally resolved performance has been characterized for each of the developed devices.

Ultra-sensitive slot-waveguide-enhanced Raman spectroscopy for aqueous solutions of non-polar compounds using a functionalized silicon nitride photonic integrated circuit.

We demonstrate an ultra-sensitive waveguide-enhanced Raman sensor for low concentration organic compounds dissolved in water. The spectra are obtained using silicon nitride slot waveguides coated with a thin film of hexamethyldisilazane-modified mesoporous silica. Enriched locally by 600-fold within the coating, a micromolar level of cyclohexanone is probed. The sensor is also capable of simultaneous quantification of multiple analytes, and the adsorbed analytes can be completely released from the coating. These properties make this on-chip Raman sensor promising for diverse applications, especially for the monitoring of non-polar organics and biomolecules in aqueous environments.

Photonic integrated circuits based hybrid integration for wavelength beam combining.

In this Letter, we have demonstrated wavelength beam combining (WBC) through hybrid integration of photonic integrated circuits (PICs) to significantly reduce the size, weight, and operation power of the laser combining system. The hybrid integration WBC includes III/V semiconductor optical amplifiers (SOAs), which provide gain, and the silicon nitride PICs, which perform as the external cavity. We first show that the arrayed waveguide grating (AWG) -based hybrid laser defines the lasing wavelength through the AWG passband. We then demonstrate that the AWG successfully forms multiple channel lasers by combining SOAs in the hybrid platform.

Optical beam steering by using tunable, narrow-linewidth butt-coupled hybrid lasers in a silicon nitride photonics platform

Chip-scale, tunable narrow-linewidth hybrid integrated diode lasers based on quantum-dot RSOAs at 1.3 μm are demonstrated through butt-coupling to a silicon nitride photonic integrated circuit. The hybrid laser linewidth is around 85 kHz, and the tuning range is around 47 nm. Then, a fully integrated beam steerer is demonstrated by combining the tunable diode laser with a waveguide surface grating. Our system can provide beam steering of 4.1° in one direction by tuning the wavelength of the hybrid laser. Besides, a wavelength-tunable triple-band hybrid laser system working at ∼ 1 , ∼ 1.3 , and ∼ 1.55 μm bands is demonstrated for wide-angle beam steering in a single chip.

Slot-Waveguide Silicon Nitride Organic Hybrid Distributed Feedback Laser

One of the major barriers for a widespread commercial uptake of silicon nitride photonic integrated circuits for cost-sensitive applications is the lack of low-cost monolithically integrated laser light sources directly emitting into single-mode waveguides. In this work, we demonstrate an optically pumped organic solid-state slot-waveguide distributed feedback laser designed for a silicon nitride organic hybrid photonic platform. Pulsed optical excitation of the gain medium is achieved by a 450 nm laser diode. The optical feedback for lasing is based on a second-order laterally coupled Bragg grating with a slot-waveguide core. Optimized material gain properties of the organic dye together with the increased modal gain of the laser mode arising from the improved overlap of the slot-waveguide geometry with the gain material enable single-mode lasing at a wavelength of 600 nm. The straightforward integration and operation with a blue laser diode leads to a cost-effective coherent light source for photonic integrated devices.

CMOS-compatible, piezo-optomechanically tunable photonics for visible wavelengths and cryogenic temperatures.

We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. As an example of the potential of the platform, we demonstrate a compact (∼40 µm diameter) silicon nitride ring resonator modulator operating at 780 nm with intrinsic quality factors in excess of 1.5 million, >10 dB change in extinction ratio with 2 V applied, a switching time less than 4 ns, and a switching energy of 0.5 pJ/bit. We characterize the exemplary device at room temperature and 7 K. At 7 K, the device obtains a resistance of approximately 20 teraohms, allowing it to operate with sub-picowatt electrical power dissipation. We further demonstrate a Mach-Zehnder modulator constructed in the same platform with piezoelectrically tunable phase shifting arms, with 750 ns switching time constant and 20 nW steady-state power dissipation at room temperature.

A high efficiency silicon nitride waveguide grating coupler with a multilayer bottom reflector

We propose a high efficiency apodized grating coupler with a bottom reflector for silicon nitride photonic integrated circuits. The reflector consists of a stack of alternate silicon nitride and silicon dioxide quarter-wave films. The design, fabrication and optical characterization of the couplers has been presented. The measured fiber to detector insertion loss was −3.5 dB which corresponds to a peak coupling efficiency of −1.75 dB. A 3 dB wavelength bandwidth of 76.34 nm was demonstrated for the grating coupler with a 20-layer reflector. The fabrication process is CMOS-compatible and requires only a single etching step.

Low-loss TeO2-coated Si3N4 waveguides for application in photonic integrated circuits.

We report on high-quality tellurium oxide waveguides integrated on a low-loss silicon nitride wafer-scale platform. The waveguides consist of silicon nitride strip features, which are fabricated using a standard foundry process and a tellurium oxide coating layer that is deposited in a single post-processing step. We show that by adjusting the Si3N4 strip height and width and TeO2 layer thickness, a small mode area, small bend radius and high optical intensity overlap with the TeO2 can be obtained. We investigate transmission at 635, 980, 1310, 1550 and 2000 nm wavelengths in paperclip waveguide structures and obtain low propagation losses down to 0.6 dB/cm at 2000 nm. These results illustrate the potential for compact linear, nonlinear and active tellurite glass devices in silicon nitride photonic integrated circuits operating from the visible to mid-infrared.

Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration.

We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the InP/GaAs-Si3N4 platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for both InP and GaAs gain chips at the same time. Single frequency lasing at 1.55 µm and 1 µm is simultaneously obtained on a single chip with spectral linewidths of 18-kHz and 70-kHz, a side mode suppression ratio of 52 dB and 46 dB, and tuning range of 46 nm and 38 nm, respectively. The resulting dual-band narrow-linewidth diode lasers have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics.

INVITED] Silicon nitride photonic integration for visible light applications

In this article, we provide a review of fabrication platforms and state of the art developments in the area of silicon nitride photonic integrated circuits (PICs) for the visible wavelength range, mostly employed in bio-medical and chemical sensing applications. Additionally, we introduce PIX4life, the European pilot line for silicon nitride PICs for visible applications. PIX4life provides a unified framework for the development of such PICs, including design and software, fabrication, characterization and packaging.

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication.

Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III-V semiconductors. Until now, however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography (and, therefore, on existing semiconductor manufacturing infrastructure) has been established. Here, the first methylammonium lead iodide perovskite microdisc lasers monolithically integrated into silicon nitride PICs by such a top-down process are presented. The lasers show a record low lasing threshold of 4.7 μJcm-2 at room temperature for monolithically integrated lasers, which are complementary metal-oxide-semiconductor compatible and can be integrated in the back-end-of-line processes.

Interferometric imaging using Si3N4 photonic integrated circuits for a SPIDER imager.

This paper reports design, fabrication, and experimental demonstration of a silicon nitride photonic integrated circuit (PIC). The PIC is capable of conducting one-dimensional interferometric imaging with twelve baselines near λ = 1100-1600 nm. The PIC consists of twelve waveguide pairs, each leading to a multi-mode interferometer (MMI) that forms broadband interference fringes or each corresponding pair of the waveguides. Then an 18 channel arrayed waveguide grating (AWG) separates the combined signal into 18 signals of different wavelengths. A total of 103 sets of fringes are collected by the detector array at the output of the PIC. We keep the optical path difference (OPD) of each interferometer baseline to within 1 µm to maximize the visibility of the interference measurement. We also constructed a testbed to utilize the PIC for two-dimension complex visibility measurement with various targets. The experiment shows reconstructed images in good agreement with theoretical predictions.

Editorial

We demonstrate controlled-NOT (CNOT) operation of a silicon nitride photonic integrated circuit using path-entangled photon pairs from a silicon-photonic integrated circuit as logical inputs. The CNOT gate is constructed by combining several silicon-nitride Mach–Zehnder interferometers for a linear-optical quantum gate. We package each of the two photonic circuits with electrical wire bonding and optical fiber bonding for stable measurement. The logical-basis fidelity of CNOT operation is measured better than 81% for the fully packaged photonic circuits.