This paper describes the design of an ultrahigh frequency ultrasound system combined with tightly focused 500 MHz ultrasonic transducers and high frequency wideband low noise amplifier (LNA) integrated circuit (IC) model design. The ultrasonic transducers are designed using Aluminum nitride (AlN) piezoelectric thin film as the piezoelectric element and using silicon lens for focusing. The fabrication and characterization of silicon lens was presented in detail. Finite element simulation was used for transducer design and evaluation. A custom designed LNA circuit is presented for amplifying the ultrasound echo signal with low noise. A Common-source and Common-gate (CS-CG) combination structure with active feedback is adopted for the LNA design so that high gain and wideband performances can be achieved simultaneously. Noise and distortion cancelation mechanisms are also employed in this work to improve the noise figure (NF) and linearity. Designed by using a 0.35 μm complementary metal oxide semiconductor (CMOS) technology, the simulated power gain of the echo signal wideband amplifier is 22.5 dB at 500 MHz with a capacitance load of 1.0 pF. The simulated NF at 500 MHz is 3.62 dB.