Silicon Integrated Passive Device Research Articles

A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device

This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire W-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band.

Comparison of 5-GHz Quadrature Couplers Using GaAs and Silicon-Based IPD Technologies

The 5-GHz quadrature couplers implemented in GaAs and silicon-based integrated passive device (IPD) technologies are presented. Although GaAs technology is superior to silicon-based technology in terms of substrate resistivity and back-side vias, the quadrature coupler using a silicon IPD process achieved better insertion loss due to thick metal traces and comparable substrate resistivity. While the coupler using the GaAs process employed 4- $\mu \text{m}$ -thick metal traces, the coupler using silicon IPD technology employed 10.8- $\mu \text{m}$ -thick traces realized with via connections between a top metal of 5.3- $\mu \text{m}$ thickness and a bottom metal of 5.5- $\mu \text{m}$ thickness. The couplers using the silicon and GaAs IPD process technologies showed 0.15 and 0.27 dB of insertion loss, respectively. Also, the silicon IPD design uses a slightly different topology which splits a coupled inductor into two coupled inductors with shunt capacitors to achieve a broader distributed bandwidth.

Silicon Design and Measurement [Book/Software Reviews

The motivation for his book stems from the complexity of on-wafer measurements and their associated characterization techniques. His intent is to bridge the gap between academic knowledge and real-world silicon design and measurement and also to satisfy the needs of modern RF integrated circuit designers and researchers. Dr. Lourandakis provides a complete and comprehensive guide to performing on-wafer measurements, calibration, and de-embedding of silicon-integrated passive devices. The book opens with an introduction to two basic domains of signal analysis: frequency- and time-domain analysis.

Bridging Academic Knowledge and Real-World Silicon Design [Book\Software Reviews

The focus of his book is the complex subject of on-wafer measurements and their associated characterization techniques. The author aims to bridge the gap between academic knowledge and real-world silicon design and measurement and thus satisfy the needs of modern-day RF integrated circuit designers and researchers. His purpose is to provide a complete and comprehensive guide for performing on-wafer measurements, calibration, and de-embedding of silicon-integrated passive devices. This book starts with the introduction of two basic domains of signal analysis: frequency- and time-domain analysis. The author indicates that LRRM calibration is more robust and its coverage is better in terms of the theoretical value over a broader frequency range.

A high‐efficiency gan power amplifier with harmonic control based on Si‐IPDS

ABSTRACTThis article presents a high‐efficiency power amplifier using quasi‐MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate‐source voltage waveform control with Class‐F operation achieves significant efficiency improvements. The quasi‐MMIC technology using silicon‐integrated passive devices (Si‐IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class‐F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2178–2182, 2016

An X‐band RLC matched power amplifier using quasi‐MMIC technology

ABSTRACTThis article presents an RLC matched power amplifier using quasi‐MMIC technology in the X‐band. The power amplifier consists of a GaN HEMT power device and several passive components including inductors, capacitors, resistors, and transmission lines using a silicon integrated passive device (IPD) process. The standard silicon process can drive the solution to cost down compared with conventional microwave monolithic integrated circuit (MMIC) technology. This technology using silicon IPDs provides small size matching networks close to MMIC dimensions. The input matching network using the RLC matched circuit is designed to obtain broadband characteristic and gain flatness. The dimensions of input and output silicon IPD are 1.5 mm × 1.2 mm and 1.9 mm × 2.2 mm, respectively, with a thickness of only 0.15 mm. The measured results show that the quasi‐MMIC power amplifier has a P3dB of more than 38.3 dBm with a drain efficiency of more than 51.2% in the frequency range from 8.2 to 10 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2803–2807, 2015