Silicon Glass Research Articles

Effect of substrate temperature on surface morphology and optical properties of sputter deposited nanocrystalline nickel oxide films

Reactive magnetron sputtering deposition of nickel oxide (NiO) films were done on p-type silicon substrate and glass substrate under Ar+O2 gas environment at substrate temperature of 26 °C, 100 °C, 200 °C and 300 °C. The phase, crystallinity and grain size were analysed by x-ray diffraction in grazing incidence mode (GIXRD). The average grain size varied in the range of 12 nm to 28 nm for NiO films. The microstructural analysis was carried out under a field emission scanning electron microscopy (FESEM) as well as transmission electron microscopy (TEM). Uniform distribution of grains and lower surface roughness were observed for the NiO films processed at relatively higher temperature. Direct band gap of investigated NiO films were measured with the help of absorption data obtained from UV-visible photospectrometer. The direct band gap was found to vary from ≈2.92 eV to ≈3.96 eV with change in substrate temperature.

Silicon-compatible Mg2Si/Si n-p photodiodes with high room temperature infrared responsivity

For the full benefit of the silicon chip industry and to further extend the photoresponse cut-off wavelength of the current Si photodetectors beyond 1100 nm, high-performance silicon-compatible Mg2Si/Si n-p photodiodes are constructed on the bulk silicon wafer by magnetron sputtering and post-annealing sequential processes. The results show that the annealing period appreciably affects microstructure, crystallite size, and roughness of the Mg2Si film sputtered on glass substrates and silicon wafers. Meanwhile, the fabricated Mg2Si/Si n-p photodiodes demonstrate clear rectifying behavior and evident spectral response characteristics in the wavelength domain from 0.8 to 1.35 μm, with a maximum room temperature zero-bias response of 0.1, 0.15, 0.86, and 0.47 A/W at 1.05 μm for the annealing periods of 10, 20, 40, and 60 min, respectively. The photoresponse cut-off wavelength of the fabricated Mg2Si/Si n-p photodiodes is 1.35 μm; however, the photosensitive cut-off of the commercially available Hamamatsu Si photodiode is 1.25 μm. The fabricated Mg2Si/Si n-p photodiodes at RTA period of 40 min reveal spectral response of longer cut-off wavelength and higher intensity near the photon energy threshold compared to the Hamamatsu Si photodiode. In this context, the fabricated photodiodes in this study offer huge potentials to develop high-performance silicon-compatible photodiodes for efficiently sensing the infrared light in the wavelength domain from 0.8 to 1.35 μm.

Effect of Dopant Concentration on the Structural, Optical and Sensing Properties of (SnO2)1-x(TiO2:CuO)x Sprayed Films

Spray pyrolysis technique was subjected to synthesized (SnO2)1-x (TiO2: CuO) x Thin films on different substrates like glass and single crystal silicon using. The structure of the deposited films was studied using x-ray diffraction. A more pronounced diffraction peaks of SnO2 while no peaks of (CuO , TiO2 ) phase appear in the X-ray profiles by increasing of the content of (TiO2 , CuO) in the sprayed films. Mixing concentration (TiO2 , CuO) influences on the size of the crystallites of the SnO2 films ,the size of crystallites of the spray paralyzed oxide films change in regular manner by increasing of (TiO2 , CuO) amount. The effect of mixing concentration on the optical properties of the films was also investigated. The reflectance and transmittance spectra in the wavelength range (300-1100) nm were employed to determine the optical properties such as energy band gap (Eg) and refractive index (n), extinction coefficient (k) , real and imaginary parts of dielectric constants (ε1, ε2) for (SnO2)1-x(TiO2:CuO)x films. The energy band gap omit of which showed reduction from (3.65 to 2.2) eV by reducing of SnO2 amount from (100 to 70) % .The reduction of energy band gap was ascribed to the new tail states introduced in the band gap of tin oxide. The sensitivity of the prepared sensor film was determined resistance difference of the films when exposed to oxidizing gas. The data declared that the mixed SnO2 films have better sensitivity in comparison with unmixed films.

Effect of Dopant Concentration on the Structural, Optical and Sensing Properties of (SnO2)1-x(TiO2:CuO)x Sprayed Films

Spray pyrolysis technique was subjected to synthesized (SnO2)1-x (TiO2: CuO) x Thin films on different substrates like glass and single crystal silicon using. The structure of the deposited films was studied using x-ray diffraction. A more pronounced diffraction peaks of SnO2 while no peaks of (CuO , TiO2 ) phase appear in the X-ray profiles by increasing of the content of (TiO2 , CuO) in the sprayed films. Mixing concentration (TiO2 , CuO) influences on the size of the crystallites of the SnO2 films ,the size of crystallites of the spray paralyzed oxide films change in regular manner by increasing of (TiO2 , CuO) amount. The effect of mixing concentration on the optical properties of the films was also investigated. The reflectance and transmittance spectra in the wavelength range (300-1100) nm were employed to determine the optical properties such as energy band gap (Eg) and refractive index (n), extinction coefficient (k) , real and imaginary parts of dielectric constants (ε1, ε2) for (SnO2)1-x(TiO2:CuO)x films. The energy band gap omit of which showed reduction from (3.65 to 2.2) eV by reducing of SnO2 amount from (100 to 70) % .The reduction of energy band gap was ascribed to the new tail states introduced in the band gap of tin oxide. The sensitivity of the prepared sensor film was determined resistance difference of the films when exposed to oxidizing gas. The data declared that the mixed SnO2 films have better sensitivity in comparison with unmixed films.

Transparent nanoporous P-type NiO films grown directly on non-native substrates by anodization

While electrochemical anodization has been used to form a number of nanostructured n-type semiconducting metal oxides for optoelectronic device applications, there exists a dearth of p-type metal oxide films that are solution processable. Herein, we formed p-type semiconducting NiO films by vacuum depositing Ni thin films on non-native substrates (transparent conductive oxide (TCO)-coated glass substrates and silicon wafers) using magnetron sputtering, and subsequently anodizing and annealing the Ni films. The Ni films were subjected to electrochemical anodization in diethylene glycol based organic electrolytes and subsequently annealed at 600 °C to form nanoporous NiO films with a pore size of ~ 20 nm. Runaway etching is a key issue in Ni anodization which was mitigated through the use of ice bath cooling and galvanostatic anodization. The choice of substrate is found to be critical to the resulting morphology owing to the differing surface roughness. Crystalline NiO is found to have formed from Ni(OH)2 and NiOOH during annealing, and an additional NiSi layer is noted for NiO films on Si wafers. The bandgap of the NiO was estimated to be 3.5 eV. Electrochemical impedance spectroscopy and Mott–Schottky analysis confirmed p-type semiconducting behaviour, and enabled measurement of an acceptor density (NA) of 2.85 × 1018 cm−3 and a flatband potential (VFB) of 0.687 V versus Ag/AgCl.

Miniaturized Electrochemical Supercapacitor with Patterned Horizontally Aligned Carbon Nanotube Sheets

Introduction: Miniaturized energy storage systems have emerged as a promising approach to address the growing demands to power electronic devices on small footprint area. Microsupercapacitors have become a crucial part of this advancement and have drawn much attention in the research communities. Designing a microstructure and choosing the electroactive materials are two significant factors that greatly affect the performance of the device. Here, we report for the first time the successful fabrication and characterization of a microsupercapacitor with interdigitated structure based on carbon nanotube sheets (CNT sheet). Carbon nanotube sheet is a novel structure which is spun directly from the as-grown carbon nanotube forest. Horizontally aligned structure of CNT sheet offering excellent conductivity and large surface area enabled us to develop a light micro-device with higher electrochemical performance than other CNT-based counterparts in aqueous electrolyte. Materials and process: Spinnable carbon nanotube was grown via chemical vapor deposition (CVD) in a horizontal furnace at temperature of 780°C using acetylene as hydrocarbon and iron as metal catalyst. Multi-sheets of 5, 10, 20, 30 and 50 layers on two different substrates (glass slide and silicon wafer) and were patterned with reactive ion etch (RIE). CNT sheet was used as both active material and current collector. Interdigital structure (IDE) with gap size of 145 um, electrode width of 300um and the length of 5mm were fabricated. The effect of active material thickness on the device performance including specific capacitance and rate capability was studied. Furthermore, long-term stability of the devices was investigated using cyclic voltammetry technique at scan rate of 100mV/s for 10,000 cycles. Results: Thickness dependent specific capacitance of 5 mF/cm2 at the scan rate of 50 mV/s per footprint area of the device was obtained for multi-sheet of 50 layers. Stability and performance of the device was tested using an aqueous PVA-H3PO4 gel electrolyte that also offers desirable electrochemical capacitive properties. High Coulombic efficiency (around 95%), great rate capability (1.2 mF/cm2 at scan rate of 5V/s) and excellent capacitance retention (less than 12%) over 10,000 cycles were obtained. Conclusion: We have fabricated a long-term stable planar microsupercapacitor using horizontally aligned carbon nanotube sheets and achieved a noticeable specific capacitance and high rate capability which demonstrates the potential of CNT sheet for future thin film micro scale energy storage devices. Figure 1

Germanium antimony quantum dots morphology and Raman spectroscopy fabricated by inert gas condensation

Abstract Phase change materials (PCM) based on nanostructure are attractive interest for non-volatile memory due to their high data–storage density and low power consumption. Germanium antimony (Ge-Sb) quantum dots (QDs) with tunable size and density have been fabricated on mica, silicon, and quartz glass substrates by magnetron sputtering with inert gas condensation. The deposition time rate plays an important role in the formation of the monodisperse or aggregate quantum dots. The dots’ morphology, in terms of size and density as observed by atomic force microscopy (AFM) strongly depends on the deposition time rate. The size of QDs was observed by (AFM) images topography between 1.6 and 3.2 nm. Raman spectroscopy measurements reveal that Ge-Sb phonon at 250 cm−1 (Lo mode) and 220 cm−1 (To mode). Also, strong Sb-Sb crystallized peaks positioned at about 145 cm−1 and 110 cm−1 is observed.

Effect of surface modification on the properties of plasma‐polymerized hexamethyldisiloxane thin films

Plasma‐polymerized hexamethyldisiloxane (pp‐HMDSO) thin films have been deposited in a radiofrequency (RF) remote plasma‐enhanced chemical vapor deposition (PECVD) system, on different types of substrates: silicon wafers, glass, quartz crystals, and chemiresistor structure. The as‐grown thin films have been post treated in two types of reactive plasmas produced in SF6 and O2 gases. The effect of this surface modification on different properties of the as‐grown pp‐HMDSO thin film (chemical structure, elemental composition, surface morphology, film density and thickness, optical bandgap, and electrical resistivity) has been investigated. It is found that SF6 plasma and O2 plasma surface modifications of the as‐grown pp‐HMDSO thin film induce property changes different from each other. SF6 plasma converted the as‐grown pp‐HMDSO film to a more porous material and caused a narrowing of its optical band gap of about 33%, while O2 plasma induced a lowering of film electrical resistivity of about two orders of magnitude.

Barrier-free process for fluorinated silicon glass film in Cu interconnects

A dielectric barrier is required for a porous low-dielectric-constant (low-k) film used in Cu interconnects, however, resulting in an increased effective dielectric constant. In this study, a barrier-free fluorinated silicon glass (FSG) dielectric process is proposed and evaluated. Experimental results indicated that FSG films, although had a higher capacitance than p-SiCOH/SiCN stacked films, provide a higher hardness, better O2 plasma resistance, supper Cu barrier, and enhanced dielectric breakdown strength. Therefore, a barrier-free FSG dielectric process is feasible and promising strategy for back-end-of-line interconnects integrity. Moreover, the issue of Cu/FSG peeling under a thermal stress can be solved by providing a post-annealing after FSG deposition or using an in-situ two-step FSG deposition process. The mechanism is also proposed in this study.

Effect of SiH<sub>4 </sub>Flow Rates on the Structures and Properties of Si-Rich Silicon Nitride Films Prepared by Hot Wire Chemical Vapor Deposition

Silicon-rich silicon nitride thin films were deposited on the P type (100) of silicon and Corning7059 glass by hot-wire chemical vapor deposition method using SiH4 and NH3 as reaction gas source. The effects of SiH4 flow rate on the structures and optical properties of the thin films were studied under optimizing other deposition parameters. The structures, band gap width and surface morphology of the thin films were characterized by Fourier transform infrared absorption spectroscopy (FTIR), ultraviolet-visible (UV-VIS) light transmittance spectra and scanning electron microscope (SEM), respectively. The experiment results show that, with increasing of the SiH4 flow rate, the content of N and Si atoms in the thin films increases, and the Si-N bond density increases gradually, and the optical band gap of the films shows a trend of increasing. When the silane flow rate is less than 0.9sccm, there is no Si-H bond stretching vibration absorption peak, and silicon atoms mainly bond with nitrogen atoms. As the SiH4 flow rate decreases, silicon clusters embedded in silicon nitride matrix gradually become smaller. When SiH4 flow rate is 0.4sccm, we prepared the silicon cluster nanoparticles with an average diameter of about 50nm embedded in silicon nitride thin films matrix. Therefore, properly reduction of the SiH4 flow rate is favorable for preparing the smaller silicon cluster nanoparticles in silicon rich silicon nitride thin films. The results lay the foundation for the preparation of silicon quantum dots thin film materials.

Stimulated Brillouin scattering in layered media: nanoscale enhancement of silicon.

We report a theoretical study of stimulated Brillouin scattering (SBS) in general anisotropic media, incorporating the effects of both acoustic strain and local rotation. We apply our general theoretical framework to compute the SBS gain for layered media with periodic length scales smaller than all optical and acoustic wavelengths, where such composites behave like homogeneous anisotropic media. We predict that a layered medium composing nanometer-thin layers of silicon and As2S3 glass has a bulk SBS gain of 1.28×10-9 W-1 m. This is more than 500 times larger than that of silicon and almost double the gain of As2S3. The enhancement is due to a combination of roto-optic, photoelastic, and artificial photoelastic contributions in the composite structure.

Elasto – Plastic materials behavior evaluation according to different models applied in indentation hardness tests

Instrumented Hardness Tests (IHT), also known as nanoindentation, establishes itself throughout the years as a standard method to characterize superficial elasto – plastic properties of materials, with a greater capability to evaluate thin films. The main advantage of this test lies on the application of dynamical load – unload cycles, generally with values of few mN and displacements below 200 nm, granting more information about the material beyond hardness, as elastic modulus, creep, fracture resistance, among others. However, the difficulty to achieve an adequate contact between sample and penetrator complicate the interpretation of its results. Several theoretical models were developed in order to diminish this effect achieving relative success. Each theory takes in consideration different aspects of the phenomenon and its application produces diverse mechanical properties values, which makes difficult the comparison among them. The aim of this work is to measure materials mechanical properties in accordance with ISO 14577 Martens model, the Oliver – Pharr (OP) method and the approximation developed by Gong, Miao and Peng (GMP) which are typically used on IHT, in order to find a possible relation among them. Aluminum, silicon (1 0 0) and soda-lime glass bulk materials were measured using a Fischerscope HV100 equipment with a Berkovich indenter. Dynamical load – unload cycles were applied to the samples with its maximum value ranging between 3 mN and 25 mN, during a total time of 120 s each cycle. The hardness calculation was performed according to the ISO 14577 Martens hardness model with indenter tip correction and considering the indentation size effect (ISE). The Oliver – Pharr method was calculated contemplating the non-linearity of the unload curve, adjusted by a power law. The Gong – Miao – Peng approximation was very similar to the OP technique, differing by the use of a virtual contact load and an indenter response based on a conical geometry instead the revolution paraboloid one, which is typically used. The results obtained confirm the hardness values variations among the models, which differ mostly at low load cycles. The comparison between the hardness calculations made by each model and the indenter response are presented as final result.

Stable transformation of the green algae Acutodesmus obliquus and Neochloris oleoabundans based on E. coli conjugation

Microalgae are an ideal platform for the production of high-value chemicals, nutritional products and biofuels. Genetic engineering could speed up the development of microalgae derived products and reduce the overall production costs. Genetic methods such as particle bombardment, electroporation, Agrobacterium tumefaciens mediated transformation (ATMT), and agitation with glass beads and silicon carbide whiskers have been developed for the genetic transformation of microalgae. However, the transformation efficiency is species dependent, so a variety of transformation methods are required to engineer a wide range of microalgae species. The oleaginous microalgae Acutodesmus obliquus and Neochloris oleoabundans have a great potential as production platforms due to their ability to produce large amounts of triacylglycerol (TAG). Genetic modification techniques however are required to increase TAG levels further or to modify the fatty acid composition. Recently, a conjugation-based method for the delivery of episomes from bacteria to diatom microalgae has been reported. In this study, we have achieved the successful transformation of green oleaginous microalgal strains by transferring an expression vector via conjugation from E. coli. Since delivery of exogenous DNA into the microalgae cells is only the first step in obtaining transgenic microalgae, we further analyzed transformation efficiencies by PCR and expression of the Clover fluorescent protein in the targeted species.

Innovative technology for the production of high-purity sand silica by thermal treatment and acid leaching process

The production of high purity silica out of natural sand plays a critical role as a starting material in the industry of glass and high grade silicon. In this paper, we expose a novel processing method for the purification of sand silica. This method is a subsequent combination of thermal treatment and acid leaching. Firstly, samples of Tunisian natural sand were submitted to a rapid thermal annealing in an infra-red furnace under O2 atmosphere at fixed temperature and time 1000 °C and 1 h, respectively. Subsequently, the samples were soaked in an aqueous acid solution composed hydrofluoric acid and a hydrochloric acid concentration. This last acid leaching step was intended to remove the gettered impurities during the annealing step. Various characterization techniques such as optical absorption, energy dispersive X-ray analysis, electronic paramagnetic resonance analysis and atomic absorption spectroscopy were used aiming to evaluate the effectiveness of this impurity gettering technology. The results show substantial reduction in all metallic impurities in silica after three successive purification cycles improving the purity from 99.7 to 99.9%.

Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursors

A family of 12 zinc(II) thoureide complexes, of the general form [{L}ZnMe], [{L}Zn{N(SiMe3)2}], and [{L}2Zn], have been synthesized by direct reaction of the thiourea pro-ligands iPrN(H)CS(NMe2) H[L1], CyN(H)CS(NMe2) H[L3], tBuN(H)CS(NMe2) H[L2], and MesN(H)CS(NMe2) H[L4] with either ZnMe2 (1:1) or Zn{N(SiMe3)2}2 (1:1 and 2:1) and characterized by elemental analysis, NMR spectroscopy, and thermogravimetric analysis (TGA). The molecular structures of complexes [{L1}ZnMe]2 (1), [{L2}ZnMe]2] (2), [{L3}ZnMe]∞ (3), [{L4}ZnMe]2] (4), [{L1}Zn{N(SiMe3)2}]2 (5), [{L2}Zn{N(SiMe3)2}]2 (6), [{L3}Zn{N(SiMe3)2}]2] (7), [{L4}Zn{N(SiMe3)2}]2] (8), [{L1}2Zn]2 (9), and [{L4}2Zn]2 (12) have been unambiguously determined using single crystal X-ray diffraction studies. Thermogravimetric analysis has been used to assess the viability of complexes 1-12 as single source precursors for the formation of ZnS. On the basis of TGA data compound 9 was investigated for its utility as a single source precursor to deposit ZnS films on silica-coated glass and crystalline silicon substrates at 150, 200, 250, and 300 °C using an aerosol assisted chemical vapor deposition (AACVD) method. The resultant films were confirmed to be hexagonal-ZnS by Raman spectroscopy and PXRD, and the surface morphologies were examined by SEM and AFM analysis. Thin films deposited from (9) at 250 and 300 °C were found to be comprised of more densely packed and more highly crystalline ZnS than films deposited at lower temperatures. The electronic properties of the ZnS thin films were deduced by UV-Vis spectroscopy to be very similar and displayed absorption behavior and band gap (Eg = 3.711-3.772 eV) values between those expected for bulk cubic-ZnS (Eg = 3.54 eV) and hexagonal-ZnS (Eg = 3.91 eV).

Ultra-low temperature anodic bonding of silicon and borosilicate glass

Ultra-low temperature anodic bonding of silicon and borosilicate glass has been described for the first time. The article gives the arguments why the issue of non-standard anodic bonding of silicon and glass is important. Some examples of solutions were indicated, in which the development of a new anodic bonding method was crucial for the development of the final solution. A series of experiments were carried out, the effect of which was the obtaining of a permanent connection of silicon and glass at a temperature of 120 °C. Optimal conditions of the ultra-low temperature of the anodic bonding process were given. The bonding force was tested, which was more than 1.5 MPa.

Corresponding relation between PL of multicrystalline silicon wafers and solar cell efficiency

Various market factors (e.g., anti-dumping and anti-bribery, subsidy retreat, etc.) have accelerated technology upgrading and cost efficiency of PV industry. Improving conversion efficiency is an effective way to reduce cost. Mainstream silicon manufacturers are intensifying research and development of next generation high-efficiency multicrystalline silicon wafer that is of higher efficiency. It is essential to obtain the cell efficiency parameters at silicon wafer-side. This work analyzes the relationship between PL image parameters of multicrystalline silicon measured by photoluminescence tester (PL) and the corresponding cell conversion efficiency, and the relationship between parameters of PL image and cells. Firstly, an analysis software is independently compiled to analyze the black silk and normalized intensity parameters of PL image, with the numerical results of the corresponding silicon wafers calculated. Selected high efficiency multicrystalline silicon bricks are cut into silicon wafers of 190 μm thickness, which are put to tests sequentially on the PL images of multicrystalline silicon wafers and then made into solar cells. The producing process of solar cells includes ordinary acid texturing, diffusion, removal of phosphosilicon silicon glass (PSG), plasma chemical vapor deposition (PECVD), screen printing, etc. Then cell efficiency and V oc parameters thereof are tested, with the correspondence between cell efficiency and parameters thereof and the PL parameters. The experimental data show that the tail is mainly affected by large grain boundaries and high impurity content. The correlation deviation of the cell efficiency, normalized strength of V oc and PL images, and black silk ratio parameters are greater than those of the middle section and the head. The black silk ratio is low, and its solar cells efficiency and V oc are high. The normalized strength of PL images is high, and its solar cells efficiency and V oc are high. But the normalized strength of PL images and V oc of cell have strong correlation with black silk ratio of PL images, and the normalized strength and black silk ratio of PL images have weak correlation with cell conversion efficiency. The reason is that material properties of PL photoluminescence test silicon are related to the corresponding cell V oc, and cell conversion efficiency is affected by many factors: texture, diffusion, coating processes, etc. In this paper, the expression of normalized strength of PL and cell V oc is deduced based on the semiconductor correlation principle. It is proved that the normalized strength of PL is strongly correlated with that of cell V oc in principle. The normalized strength of PL obtained by the analysis has the closest correlation with the quality of multicrystalline silicon wafers, which can be better used to guide the quality improvement of multicrystalline silicon wafers.

Study of Structural, Optical and Semiconducting Properties of TiO2 Thin Film deposited by RF Magnetron Sputtering

Titanium dioxide (TiO2) thin films were investigated in various fields by growing on different substrates using RF magnetron sputtering technique. Silicon(p-type) and FTO glass were used for deposition and they were kept at room temperature while deposition. The characterization techniques such as X-Ray Diffraction method (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Energy Dispersion X-Ray Spectroscopy (EDS) were carried out to examine the structural properties of the films. The XRD peaks shows that the film is crystalline in nature and the crystallite sizes of different peaks were calculated. EDX and FTIR analysis gives the internal composition and bonding in TiO2 thin film respectively. From the UV-Vis Spectroscopy analysis, it can be shown that in visible range the transmittance of the deposited films is more than 70%. Using tauc plot we got the band gap of the films to be 3.44eV. Schottky barrier diode with aluminium contact have been fabricated and the barrier height(Фb) and the ideality factor(n) of the films were investigated using IV analysis giving a value of 1.6 and 2.4 eV respectively. This shows the semiconducting properties of TiO2 thin film

V-shaped active plasmonic meta-polymers.

We report the design and fabrication of V-shaped plasmonic meta-polymers on a glass substrate or silicon wafer using a surface functionalization approach. The efficacy of the assembly method is examined by analyzing the surface enhanced Raman scattering by an individual V-shaped antenna experimentally and using computational simulations to determine the polarization dependence of local electromagnetic field enhancement.

Micro-fabrication and hermeticity measurement of alkali-atom vapor cells based on anodic bonding

A vapor cell provides a well-controlled and stable inner atmosphere for atomic sensors, such as atomic gyroscopes, atomic magnetometers, and atomic clocks, and its hermeticity affects the stability and aging of atomic sensors. We present the micro-fabrication of a micro-electromechanical system wafer-level hermit vapor cell based on deep reactive ion etching and vacuum anodic-bonding technology. The anodic-bonding process with the voltage increasing in steps of 200 V had a critical influence on vapor cell hermeticity. Further, the silicon–glass bonding surface was experimentally investigated by a scanning electron microscope, which illustrated that there were no visual cracks and defects in the bonding surface. The leak rate was measured using a helium leak detector. The result shows that the vapor cells with different optical cavity lengths comply with the MIL-STD-883E standard (5 × 10−8 mbar·L/s). Moreover, D2 absorption spectroscopy was characterized via optical absorption. The bonding strength was determined to be 13 MPa, which further verified the quality of the vapor cells.