TiO2 thin films were prepared using the hydrothermal technique at 150, 160, 170, and 180 oC with a 6-hour holding period, while SnSx films were prepared using the SILAR method. XRD analysis reveals that the shape of the TiO2 compound in all samples is quaternary rutile with a preferred growth direction of (101), and that the peak intensity decreases as the temperature rises. The samples produced using the SILAR approach were validated by XRD analyses to include the two phases of SnS and SnS2, with SnS having a rhombic structure and SnS2 having a hexagonal structure. We note that all the manufactured FTO/TiO2/Al, FTO/n-TiO2/p-SnSx/Al, FTO/n-TiO2/p-SnO2/Al optical reagents have a nonlinear Schottky behavior. Al-TiO2 reagents at different temperatures have a high sensitivity of about 9900%, and the sensitivity of the detector decreases with the increase in the applied voltage, and it has a slow response, so we dope it with materials SnSx, SnO2. As for the TiO2/SnSx, TiO2/SnO2 reagents, we note that the highest sensitivity is 40400% for the FTO/n-TiO2/p-SnSx/Al detector with at a voltage of 0 V. Also, the sensitivity decreases with an increase in the applied voltage and its response is fast.