SiC Crystallites Research Articles

On the Properties of Weakly Absorbing Highly Conductive SiC Thin Films Prepared in a TCDDC System

ABSTRACTp- and n-type weakly absorbing highly conductive (σ>0.1(Ωcm)-1) SiC thin films with similar structural and optoelectronic properties have been prepared in a TCDDC reactor. These films contain Si microcrystals embedded in an amorphous Si:O:C:H matrix. C is preferentially incorporated as stoichiometric SiC, whereas O is present mainly as suboxide. Absorption coefficients smaller than cr-Si are observed for films containing about 20at% C and 25at% O. From diffraction studies there is no evidence for the presence of SiC crystallites. Photoluminescence studies show a peak at about 1.68eV, similar to gd a-SiC:H of comparable optical properties.

Effect of SiC content and orientation on the properties of Si/SiC ceramic composite

Silicon/silicon carbide ceramic composites are made by infiltrating carbonaceous material with liquid silicon to form SiC crystallites dispersed in a silicon matrix. The present study was conducted to determine the effects on the room temperature properties of density, elastic modulus, strength, and fracture toughness by varying the amount and distribution of the SiC crystallites. Most of the work involved uniaxially aligned SiC crystals of varying volume fraction tested both longitudinally and transversely to the converted fibre axis.

The structure of silicon carbide synthesized in diamond and silicon by ion implantation

Abstract The SiC synthesis was performed in both natural diamond and silicon as a result of the Si and C ion implantation, respectively, followed by annealing at temperatures in the range from 500° to 1200°C. The ion energy 40 keV and doses 3.7 · 1017 and 4.1 · 10 cm−2 were used at a dose rate of about 2μA cm−2. Using both highly sensitive x-ray diffractometry and ir spectrometry technique the SiC phase was found to be amorphous and polycrystalline (cubic) modification; the phase formation kinetics by ion implantation as well as the crystallization kinetics by subsequent annealing were studied, some parameters of the unit cell and the size of SiC crystallites were measured. The β;-SiC phase yield was evaluated to be less than 15% in the case of diamond and nearly 100% for silicon substrate.