Electroluminescence (EL) was observed above room temperature in p-type strained Si 0.65Ge 0.35/Si multiple quantum wells (MQWs) grown on Si(111) substrates by Si MBE. No-phonon band-edge luminescence and its transverse optical phonon replica were well resolved in the EL spectrum at 330 K. In contrast, a broad alloy band dominated the spectrum at lower temperatures, located approximately 100 meV below the band-edge state. Such alloy band emission was found to develop in QWs with a higher Ge content, x > 0.3. Both the emission of this alloy band and the quantized band-edge states were observed around 180 K. The emission intensity of the alloy band tended to saturate with increasing current injection, whereas the band-edge emission was found to increase superlinearly, suggesting the alloy band emission to be of localized excitonic origin.