Si Doping Research Articles

MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates

We reported the growth of (AlGa)2O3 layers on (10 10̅ ) α-Al2O3 substrates using cold-wall metalorganic chemical vapor deposition, and the electrical characterization of Si-doped (AlGa)2O3 layers. In the Ga2O3 growth, the α phase was dominant at low growth temperature, achieving the growth rate of 2.4 μm h−1 at 650 °C. Sheet resistance and electrical conductivity of the Ga2O3 layers with a Si concentration of 3 × 1020 cm−3 were 1 × 104 Ω/square and 8.3 S cm−1, respectively, at the measurement temperature of 500 °C. The Al composition in the (AlGa)2O3 layers was controlled from 0% to 74%. In our initial attempts, we obtained electrically conductive α-(AlGa)2O3 layers by Si doping (2 × 10−9 S cm−1 in the sample with an Al composition of 56%). Hybrid functional calculations suggest the conductivities are limited by compensation of Si through cation vacancy complexes, and not by the significant amounts of co-incorporated C and N that are predicted to be electrically passivated by hydrogen.

The adsorption of CO and CO2 gases on (6,4) and (7,7) AlN nanotubes for enhanced sensor applications: A DFT approach

We perform total energy and electronic structure calculations to analyse the adsorption of Carbon dioxide and Carbon monoxide molecules on Si-doped single-walled aluminium nitride nanotubes (AlNNTs) of (7,7) and (6,4) chirality using local density approximation (LDA) in the framework of density functional theory (DFT). The results reveal that doped Si-(7,7) AlNNT system show highest sensing potential of approximately 80% of gas adsorption for both CO2 and CO. However, Si-(6,4) indicates a recovery time of 1.68 sec, and 6-fold better compared with Si-(7,7). We find that pristine (6,4) adsorbs both gases with longer recovery times, making it unsuitable as gases sensor and suggest that strong bonding exist between them making it difficult to dissociate. These findings demonstrate potential application of Si-doped aluminium nitride nanotubes as highly effective sensor for detecting CO2 and CO greenhouse gases and paving the way for the development of advance sensing technologies at the nanoscale.

Significant phonon localization and suppressed transport in silicon-doped gallium oxide: A study using a unified neural network interatomic potential

Monoclinic gallium oxide (β-Ga2O3) is a fourth-generation semiconductor with great application potential in high-power microelectronics. Recent studies indicate that the electrical conductivity of β-Ga₂O₃ can be substantially enhanced through silicon (Si) doping. However, the effects on thermal transport, especially by considering the practical nanostructures within the crystal, have not yet been explored. To address this gap, we have developed a unified neural network potential for investigating the unexplored phonon transport of the β-(SixGa1–x)2O3 with varying doping levels. Our atomistic simulations showed that compared to intrinsic β-Ga2O3, the room-temperature thermal conductivities respectively decreased by 36.5%, 33.5%, and 38.8% along the a, b, and c axes in β-SiGa511O768, and by 79.6%, 74.9%, and 77.8% in β-SiGa7O12. The significant degradation in phonon transport is attributed to increased lattice anharmonicity, reduced sound velocity, and most importantly, induced phonon localization due to Si substitutions. A quantitative analysis reveals that the localization primarily occurs in phonons with frequencies exceeding 2.5 THz. The vibration is confined to a region around the Si atom, extending only to its second-nearest neighbors.

Attojoule Hexagonal Boron Nitride-Based Memristor for High-Performance Neuromorphic Computing.

In next-generation neuromorphic computing applications, the primary challenge lies in achieving energy-efficient and reliable memristors while minimizing their energy consumption to a level comparable to that of biological synapses. In this work, hexagonal boron nitride (h-BN)-based metal-insulator-semiconductor (MIS) memristors operating is presented at the attojoule-level tailored for high-performance artificial neural networks. The memristors benefit from a wafer-scale uniform h-BN resistive switching medium grown directly on a highly doped Si wafer using metal-organic chemical vapor deposition (MOCVD), resulting in outstanding reliability and low variability. Notably, the h-BN-based memristors exhibit exceptionally low energy consumption of attojoule levels, coupled with fast switching speed. The switching mechanisms are systematically substantiated by electrical and nano-structural analysis, confirming that the h-BN layer facilitates the resistive switching with extremely low high resistance states (HRS) and the native SiOx on Si contributes to suppressing excessive current, enabling attojoule-level energy consumption. Furthermore, the formation of atomic-scale conductive filaments leads to remarkably fast response times within the nanosecond range, and allows for the attainment of multi-resistance states, making these memristors well-suited for next-generation neuromorphic applications. The h-BN-based MIS memristors hold the potential to revolutionize energy consumption limitations in neuromorphic devices, bridging the gap between artificial and biological synapses.

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

The development of high performance wide-bandgap AlGaN channel transistors with high current densities and reduced Ohmic losses necessitates extremely highly doped, high Al content AlGaN epilayers for regrown source/drain contact regions. In this work, we demonstrate the achievement of semi-metallic conductivity in silicon (Si) doped N-polar Al0.6Ga0.4N grown on C-face 4H-SiC substrates by molecular beam epitaxy. Under optimized conditions, the AlGaN epilayer shows smooth surface morphology and a narrow photoluminescence spectral linewidth, without the presence of any secondary peaks. A favorable growth window is identified wherein the free electron concentration reaches as high as ∼1.8 × 1020 cm−3 as obtained from Hall measurements, with a high mobility of 34 cm2/V·s, leading to a room temperature resistivity of only 1 mΩ·cm. Temperature-dependent Hall measurements show that the electron concentration, mobility, and sheet resistance do not depend on temperature, clearly indicating dopant Mott transition to a semi-metallic state, wherein the activation energy (Ea) falls to 0 meV at this high value of Si doping for the AlGaN films. This achievement of semi-metallic conductivity in Si doped N-polar high Al content AlGaN is instrumental for advancing ultrawide bandgap electronic and optoelectronic devices.

Effect of Al and Si content on properties of Ti(1-x-y)AlxSiyN coating materials: First-principles calculation

This paper investigates the effect of Al and Si atomic doping on the Ti(1-x-y)AlxSiyN alloy using density functional theory (DFT). The results indicate that the phase structure stability of the alloy decreases with increasing Al and Si doping content. Particularly, excessive doping leads to the transformation of crystal structure from rocksalt to wurtzite structure with lower mechanical properties. The bulk modulus of the alloy decreases with the increase of doping content. Specifically, Al atom doping initially reduces and then increases the shear modulus and Young's modulus of Ti1-xAlxN, while Si atom doping causes the shear modulus and Young's modulus of Ti0.375-yAl0.625SiyN to increase first and then decrease. In terms of hardness, the hardness of Ti1-xAlxN increases with the increase of Al doping, but the toughness decreases. Si atom doping further enhances the alloy's hardness, reaching a maximum of 29.8 GPa, consistent with the trends observed in experimental results. Electronic structure analysis reveals that Al and Si doping induces orbital hybridization, enhancing the bonding ability and chemical bond strength between atoms. The results confirm that the ionic bonds, metal bonds and covalent bonds in multi-component nitride jointly determine the mechanical properties of the alloy.

Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors

Herein, epitaxially regrown n+ (In)GaN source/drain layers for radio frequency high electron mobility transistors, addressing material and electrical characterization, are reported. A range of n+ GaN and n+ InGaN layers with indium 4–12 at% and silicon 0–5.1 × 1020 cm−3 are evaluated. The active carrier concentration in n+ InGaN exceeds 2 × 1020 cm−3. The layers exhibit so‐called V‐defects, observed by atomic force microscope and transmission electron microscope (TEM), which are associated with local composition changes. In addition to the high Si doping levels, nitrogen vacancies are also considered to contribute toward their net carrier concentration. Due to its relevance for device processing, selectivity analysis is performed, and the optimal process conditions for selective regrowth are identified. Regrowth under high temperature (800 °C) is found to be conducive to improved selectivity. However, a high thermal budget negatively impacts the overall regrowth process, as reported here for In0.17Al0.83N and Al0.26Ga0.74N barriers: whereas the InAlN barrier suffers from intermixing, the AlGaN barrier demonstrates high‐temperature stability. The impact of intermixing is studied from complementary TEM and DC electrical measurements. A low overall contact resistance of 75 Ω μm is obtained with the regrown n+ InGaN layers.

Enhancing radiation-hardness of Si-based diodes: An investigation of Al-doping effects in Si using I–V measurements

The impact of radiation on Si-based detectors garnered interest due to the observed degradation in their stability in high-radiation environments. In this study, we examined the effects of 3 MeV proton irradiation on both undoped and Al-doped n-Si diodes using I–V technique. The results revealed a decline in current trends for both types of diodes post-irradiation. This decrease was attributed to defects created by proton irradiation, which acted as recombination or trapping centres. However, the Al-doped n-Si diodes experienced a lesser decline in measured current, hinting at the radiation suppression effect of Al doping in Si. Additionally, Al-doped n-Si diodes displayed minimal changes in their diode parameters after irradiation, and their conduction mechanism remained unchanged. These results suggested that Al-doped n-Si diodes had superior stability compared to their undoped counterparts, implying that the presence of Al enhanced the diodes' resistance to radiation. The radiation suppression effect of Al seemed to stem from its ability to produce defects that improve Si's radiation-hardness, thereby mitigating the introduction of additional instability-causing defects during proton irradiation. Thus, incorporating Al was recommended for research aiming to improve the radiation resistance of Si.

Aluminum-Based Plasmonic Photodetector for Sensing Applications

Plasmonic sensors have great potential for widespread usage. However, the prohibitive cost of noble metals restrains the wider adoption of these devices. The aim of our study is to develop a cost-effective Al-based alternative to common noble metal-based plasmonic detectors. We considered a structure consisting of an n-type doped Si wafer with a shallow p-n junction and an overlying Al grating with a trapezoidal groove profile. The RCWA (rigorous coupled-wave analysis) method was used to numerically calculate the distribution of absorbed light energy in the plasmonic detector layers and to optimize the grating parameters. Based on the simulation results, experimental samples of plasmonic photodetectors with optimal grating parameters (period—633 nm, relief depth—50 nm, groove filling factor—0.36, and thickness of the intermediate Al layer—14 nm) were manufactured, and their properties were studied. For these samples, we obtained a polarization sensitivity value of Ip/Is = 8, an FWHM of the resonance in the photocurrent spectrum ranging from 50 to 100 nm, a sensitivity at the resonance maximum of Iph = 0.04–0.06 A/W, and an angular half-width of photocurrent resonance of Δθ = 5°, which are comparable to noble metal-based analogs. Our results may be used for creating cost-effective high-sensitivity plasmonic sensors.

Electronic Structure of Mg-, Si-, and Zn-Doped SnO2 Nanowires: Predictions from First Principles.

We investigated the electronic structure of Mg-, Si-, and Zn-doped four-faceted [001]- and [110]-oriented SnO2 nanowires using first-principles calculations based on the linear combination of atomic orbitals (LCAO) method. This approach, employing atomic-centered Gaussian-type functions as a basis set, was combined with hybrid density functional theory (DFT). Our results show qualitative agreement in predicting the formation of stable point defects due to atom substitutions on the surface of the SnO2 nanowire. Doping induces substantial atomic relaxation in the nanowires, changes in the covalency of the dopant-oxygen bond, and additional charge redistribution between the dopant and nanowire. Furthermore, our calculations reveal a narrowing of the band gap resulting from the emergence of midgap states induced by the incorporated defects. This study provides insights into the altered electronic properties caused by Mg, Si, and Zn doping, contributing to the further design of SnO2 nanowires for advanced electronic, optoelectronic, photovoltaic, and photocatalytic applications.

First-principles calculation of P-type Mg3Sb2 thermoelectric performance modification by Ge and Si doping

Mg3Sb2 has been considered a highly promising thermoelectric material for mid-temperature applications. Optimizing the properties of the material is crucial for accelerating its commercial use. In this work, first-principles molecular simulations of P-type Mg3Sb2 doped with the carbon group elements Ge and Si have been carried out. Results indicate that doping with Ge and Si enhances the thermodynamic stability and electrical conductivity of the material. This improvement is achieved by decreasing the bandgap, increasing the local and peak density of states, flattening the band structure, and elevating the relative mass of carriers. Additionally, doping with Ge and Si decreases the phonon velocity and Debye temperature, which weakens the thermal transport properties of the material. These findings suggest that Ge and Si doping is an effective method for improving the thermoelectric properties of the material. At the same doping concentration, the Si single-doped system possesses the smallest bandgap value with the highest peak density of states and forms an indirect bandgap, leading to the best electrical transport properties; the Ge single-doped system has the lowest phonon velocity and Debye temperature, which has the most significant effect in attenuating the thermal transport properties of the material; and the Ge–Si co-doped system has the highest relative mass of carriers, which is conducive to the enhancement of Seebeck coefficient. The results offer theoretical guidance for experimentally analyzing the effects of Ge and Si doping on the thermoelectric properties of Mg3Sb2.

Investigation of the electronic band gap tuning by Si doping on BeO using UV–VIS spectroscopy and density functional theory

BeO with tissue equivalent features promising dosimetric properties, making BeO particularly suitable for being used in all dosimetry applications. In this work, BeO was synthesized and doped with Si using sol-gel and solid-state methods, respectively. To find the optical band gap of Si-doped BeO nanoparticles (BeO:Si) experimentally, the ultraviolet-visible (UV–Vis) spectroscopy was used. To simulate the electronic band structure of BeO and Si-doped BeO, we used the QUANTUM ESPRESSO code based on density functional theory (DFT). The calculated electronic band structure exhibited insulator behavior and the band gap decreased with Si doping in two potential types. Compared to BeO, a shift toward lower energies was determined from the UV–Vis absorption spectrum of BeO:Si, the simulated and the experimental band gaps were found to be in good agreement. These findings offer insights into the dopant syntheses of BeO and their widespread use for fundamental studies as well as their potential applications.

Osteo-angiogenic activity of a micro/nano hierarchical SrSi-codoped hydroxyapatite coating on zirconium alloy

Numerous studies highlight the significance of biomimetic metallic implant surfaces for enhancing osseointegration through synergistic regulation of osteogenesis-angiogenesis. However, achieving clinical demands through singular structural or compositional biomimicry poses challenges. Therefore, the integration of both structural and compositional biomimicry, to closely emulate the host bone surface, is crucial for maximizing the biological activity of metallic implants. We synthesized a micro/nano hierarchical SrSi-codoped hydroxyapatite coating on Zr16Nb12Ti alloy through a simple microarc oxidation-hydrothermal reaction. Results revealed that Si doping enhances hydroxyapatite (HA) growth along the c-axis, forming large-sized nanorods. However, co-doping of Sr and Si inhibits grain growth by reducing crystal growth freedom, yielding a finer HA nanowire coating (MH-SrSi). MH-SrSi exhibits outstanding hydrophilicity attributed to the finer HA nanowires on the coating surface, promoting the adhesion of proteins and cells. Additionally, the released Sr and Si from MH-SrSi stimulate the secretion of osteogenesis-related proteins in osteoblasts and angiogenesis-related factors in endothelial cells, exhibiting a synergistic effect on promoting osteogenesis and angiogenesis. In vivo evaluation mirrors these results and shows that the micro/nano hierarchical structures of MH-SrSi elicited inward bone growth. Overall, MH-SrSi, combining structural biomimicry and compositional biomimicry, exhibits excellent osseointegration capability, making it a promising candidate for implant materials.

First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics

In the realm of high-power electronics, the potential of gallium oxide (β-Ga2O3) as a front-runner material has garnered significant attention due to its wide bandgap and the capacity to withstand high critical electric fields. To push the boundaries of performance for β-Ga2O3 devices, a meticulous exploration into the effects of silicon (Si) doping on β-Ga2O3 films was carried out using the metalorganic chemical vapor deposition (MOCVD) technique with various tetraethoxysilane (TEOS) flow rates (0–30 sccm). The Si-doped β-Ga2O3 films were systematically studied and characterized using XRD, SEM, and XPS techniques. XRD patterns demonstrated the preservation of the β-Ga2O3 monoclinic structure in the Si-doped β-Ga2O3 films, without any evidence of secondary phases. In addition to this, first-principles calculations were performed to explore the incorporation of Si atoms in Ga2O3 supercells, which revealed the preference of Si atoms to occupy substitutional Ga tetrahedral sites within the Ga2O3 lattice. Through the utilization of Si-doped β-Ga2O3 films, a unique design of donut-shaped Schottky barrier diode (SBD) was successfully engineered. Remarkably, the Si-doped β-Ga2O3 SBD (employed with 20 sccm TEOS flow rate) exhibited the breakdown voltage (Vbr) of 497 V and Baliga's Figure of Merit (BFOM) value of 1.16 kW/cm2, which is five-order higher BFOM compared to undoped β-Ga2O3 SBD. This substantial improvement in BFOM underscores the significant potential of Si-doped β-Ga2O3 films for high-power electronics, opening avenues for enhanced device efficiency and capabilities.

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

We investigate the silicon surface passivation property of Plasma Atomic Layer Deposited (PALD) hafnium oxide thin films and study its dependence on silicon (Si) doping type, film thickness, and post-deposition annealing conditions. Our results demonstrate that as-deposited HfOx films exhibit poor passivation quality that can be improved by performing post-deposition annealing at 450 °C in hydrogen ambient. We demonstrate that the films can effectively passivate p-Si surfaces as compared to n-Si, where the surface passivation quality of the films improves with increasing film thickness for both silicon doping types. The best performance with a minority carrier lifetime of 1.7 ms, corresponding surface recombination velocity (SRV) ∼10 cm s−1, is achieved for HfOx films thickness ∼23 nm deposited on the p-Si substrate. The Capacitance-Voltage (C–V) measurements give an insight into the passivation mechanism of the studied films. Field effect passivation is found to be an important passivation mechanism in PALD-deposited HfOx films, as revealed by C–V measurements. The films are also characterized using Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS), which reveals the chemical passivation provided by hydrogen ambient annealing. Overall, the impact of hafnium oxide film thickness and hydrogen ambient annealing conditions on silicon surface passivation is investigated. Our findings will help in utilizing plasma ALD process based HfOx films for silicon solar cell device application.

Enhanced field emission characteristics of WS2 nano-films by diamond film and Mo film

WS2 is a type of transition metal chalcogenide materials (TMDCs) that exhibits exceptional photoelectric properties. Due to its atomically sharp edges, WS2 has the capability to enhance the electric field around its edges, thus presenting significant potential in field emission applications. In this study, the electron beam vapor deposition (EBVD) system and microwave plasma chemical vapor deposition (MPCVD) system were used to prepare a series of single-layer WS2 films，single-layer diamond films and diamond/WS2 nano-composite films on N-type highly doped Si substrate, and Mo/WS2 nano-composite films were prepared on Al2O3 ceramic substrate. Based on the characterization and analysis of the microstructure and chemical composition of each thin film layer in the above film devices, the field emission (FE) characteristics of each thin film device are compared and studied. The results demonstrate that the maximum FE current density of diamond/WS2 nano-composite film device is 912 μA/cm2, which is 2.7 times of the maximum FE current density of Mo/WS2 nano-composite film device 330 μA/cm2, and 3.4 times of the maximum FE current density of the single-layer diamond thin film device 267 μA/cm2. The single layer WS2 film did not exhibit measurable FE performance. The working principles of thin film field emission devices with various structures are introduced. It is considered that the diamond layer plays the role of electron accelerating layer, which not only effectively improves the FE characteristics of diamond/WS2 nanocomposite film, but also improves the repeatability and long-term stability of diamond/WS2 nanocomposite film FE devices.

Nanopatterning Induced Si Doping in Amorphous Ga2O3 for Enhanced Electrical Properties and Ultra-Fast Photodetection.

Ga2O3 has emerged as a promising material for the wide-bandgap industry aiming at devices beyond the limits of conventional silicon. Amorphous Ga2O3 is widely being used for flexible electronics, but suffers from very high resistivity. Conventional methods of doping like ion implantation require high temperatures post-processing, thereby limiting their use. Herein, an unconventional method of doping Ga2O3 films with Si, thereby enhancing its electrical properties, is reported. Ion-beam sputtering (500eV Ar+) is utilized to nanopattern SiO2-coated Si substrate leaving the topmost part rich in elemental Si. This helps in enhancing the carrier conduction by increasing n-type doping of the subsequently coated 5nm amorphous Ga2O3 films, corroborated by room-temperature resistivity measurement and valence band spectra, respectively, while the nanopatterns formed help in better light management. Finally, as proof of concept, metal-semiconductor-metal (MSM) photoconductor devices fabricated on doped, rippled films show superior properties with responsivity increasing from 6 to 433mAW-1 while having fast detection speeds of 861µs/710µs (rise/fall time) as opposed to non-rippled devices (377ms/392ms). The results demonstrate a facile, cost-effective, and large-area method to dope amorphous Ga2O3 films in a bottom-up approach which may be employed for increasing the electrical conductivity of other amorphous oxide semiconductors as well.

Effect of Si doping on elastic-plastic fracture toughness (JIC) of T91 ferritic/martensitic steel in liquid lead-bismuth eutectic

This work was devoted to understanding the effect of Si doping (1.27 wt%) on elastic-plastic fracture toughness (JIC) of T91 ferritic/martensitic (F/M) steel in liquid lead-bismuth eutectic (LBE, Pb44.5Bi55.5, wt%) under various parameters. The results showed that Si doping significantly promoted occurrence of liquid metal embrittlement (LME) and led to more severe degradation of fracture toughness at 350 °C, especially in oxygen-poor LBE. The LME susceptibility of T91-Si steel was found to be nearly independent on the loading speeds, while T91 F/M steel exhibited a stronger LME effect when the loading speed was decreased from 0.02 mm/min to 0.002 mm/min. Oxygen concentration had a mild effect. Detailed microstructural analyses showed that the fracture behavior of the T91-Si steel in LBE environment at 350 °C was analogous to cleavage fracture and the crack propagation was mainly transgranular. The crack wall was quite rough and locally faceted to low-index crystallographic planes of {110}. Numerous dislocations were also present in the vicinity of the crack tip. No solid evidence of diffusion of Pb and Bi into the steel bulk was discovered even at the atomic scale, which strongly suggests a crack tip surface adsorption-based LME mechanism.

Effect of Si addition on the microstructure and tribological properties of FeCrNi medium entropy alloy

FeCrNi medium-entropy alloys (MEAs) have attracted widespread attention due to the excellent toughness and corrosion resistance, but its relatively low hardness results in poor tribological properties. Herein, a series of FeCrNiSix MEAs (x = 0, 0.1, 0.15, and 0.2) were prepared by arc melting and their tribological behavior was systematically investigated. The results showed that Si doping promoted the precipitation of fine σ particles in the FCC matrix, which not only enhanced the hardness, but also reduced the scratching of the wear surface by the counterpart ball. The friction coefficient and specific wear rate of the Si0.2 MEA decreased significantly (0.53 and 5.53 × 10−4 mm3/(Nm)), which were reduced by 24% and 28%, respectively, compared with the base alloy. This study provides effective guidance for improving the wear resistance of high-performance structural materials.

Topological stability of spin textures in Si/Co-doped helimagnet FeGe

Element substitutions with magnetic or non-magnetic atoms are known to significantly impact the magnetic structure and related transport properties of magnets. To clarify the change of magnetic structure of B20-type magnets with element doping, we conduct real-space observations of spin textures and their temperature (T)-magnetic field (H) phase diagrams of a helimagnet FeGe with partially substituting Fe and Ge with Co and Si, respectively. The helical period (λ) changes dramatically by the element doping: λ increases by 147% to 103 nm in 30% Co-doped FeGe, whereas it decreases by around 70% to 49 nm in 30% Si-doped FeGe, compared to the λ =70 nm in FeGe. Upon applying the magnetic field normally to (001), (110), and (111) thin plates of both FeSi0.3Ge0.7 and Fe0.7Co0.3Ge, the hexagonal skyrmion crystal (SkX) state emerges. The magnetic phase diagrams observed through the real-space imaging reveal that (1) the SkX can extend to a larger T-H window by reducing the sample thickness or by cooling the sample under specific magnetic fields from temperatures above the transition temperature (TC ); (2) the stability of the SkX phase differs between Si-doped and Co-doped FeGe: the SkX phase is most unstable in the (111) FeSi0.3Ge0.7, while it remains robust in the (111) Fe0.7Co0.3Ge. These differences indicate distinct anisotropic behavior in FeGe with magnetic (Co) and non-magnetic-element (Si) dopants.