Si 2p Binding Energy Research Articles

A novel method of selective SiO2 formation on Mo electrodes

A novel technique of selective SiO2 formation called the interfacial oxidation method is proposed and proved feasible by experiment. By this technique, a poly-Si/MoO2/Mo structure (poly-Si on MoO2 on Mo) can be converted to a poly-Si/SiO2/Mo structure by annealing in an H2 atmosphere so that SiO2 is selectively formed on only Mo electrodes. The SiO2 film formed by this method is shown to have almost the same properties as thermally grown SiO2 film; the Si(2p) binding energy peak, etching rate for diluted HF(H2O:HF=100:3), and average breakdown strength were 102.9 eV, 102 Å/min, and 3.6×106 V/cm, respectively. In addition, most diodes of 500×500 μm2 area showed a leakage current of less than 10−12 A.

XPS study of glassy grain boundary layers in dense, high-strength silicon nitride

In this paper, x-ray photoelectron spectroscopy (XPS) was employed to discuss the chemical and structural state of the glassy grain boundary phase in MgO-fluxed HPSN. Quantitative measurements indicate that for fully transformed microstructures ( β- Si 3 N 4 = 100%), the magnesium content of the glassy phase seems to be fairly constant, irrespective of the amount of MgO added. By means of the Si 2p binding energies and the modified Auger parameter α Si ∗, the structural state of the glassy layers was proved to have a silicon oxinitride configuration. Moreover, crystalline magnesium-rich phases such as MgSiO 3, Mg 2SiO 4 and MgSiN 2 have been characterized in terms of a possible contribution to the integral XPS spectrum of the HPSN glassy layer.

AES and XPS Studies of Semi‐Insulating Polycrystalline Silicon (SIPOS) Layers

Quantitative Auger electron spectroscopy (AES) and x‐ray photoelectron spectroscopy (XPS) have been used to characterize semi‐insulating polycrystalline silicon (SIPOS) layers grown from a mixture of and by chemical vapor deposition. Various values of γ (volumetric ratio of to in the deposition gas stream) were used to produce layers with a wide range of oxygen content. Oxygen concentration values determined by AES and XPS as a function of γ were found to be in reasonable agreement with values determined by electron probe microanalysis. Analyses of the Si 2p binding energy spectra indicate the presence of elemental silicon as well as silicon oxides, predominantly and . Ion sputtering of the SIPOS layers was shown to modify the surface composition from that of the unsputtered surface.

Applications of ESCA to polymer chemistry. XVII. Systematic investigation of the core levels of simple homopolymers

AbstractThe core levels of a series of 83 homopolymers have been studied by electron spectroscopy for chemical analysis (ESCA). Comparisons of the experimentally determined core‐level binding energies with theoretical calculations using the ground‐state potential model in the complete neglect of differential overlap (CNDO/2) self‐consistent field molecular orbital (SCF MO) formalism have been made on the C1s and O1s core levels for the oxygen‐containing polymers in the series. A comparison of the ground‐state potential model (GPM) and relaxation potential model (RPM) on a series of six model compounds representative on the series of polymers is given. Compilations are given of binding energies of C1s, O1s, N1s, Cl2p, S2p, Si2p, and Br3d levels for typical structural features of common occurrence in polymer systems. These data, taken in conjunction with that previously published on fluoropolymers, provide a sound basis for the development of ESCA as a fingerprint tool in the elaboration of features of structure and bonding in polymers in general.

ESCAによる珪酸塩中のSi2p結合エネルギーの測定とO<SUP>0</SUP>, O<SUP>−</SUP>およびO<SUP>2−</SUP>イオンの定量

ESCAによる珪酸塩中のSi2p結合エネルギーの測定とO<SUP>0</SUP>, O<SUP>−</SUP>およびO<SUP>2−</SUP>イオンの定量

ESCA Studies of the Clean Si (111) Surface

The angular variation of elastically scattered electrons excited by X-rays from various electron levels of silicon and surface or near surface impurity atoms of nickel and gold are reported. The valence band profile of the Si (111) surface is presented as a function of electron take-off angle. Evidence is presented that the Si(2p) binding energy is dependent on the crystal surface geometrical ordering. A discussion of some of the implications of these studies is presented.

Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide films

Nonstoichiometric interfacial transition regions located between thermally grown silicon oxide films and silicon substrates have been identified by variation in silicon and oxygen x‐ray photoelectron spectral data.1 Changes in Si 2p binding energies, and line intensities and linewidths of both Si 2p and O 1s photoelectron lines are detected in spectra of oxide films less than 25‐A thick and are each consistent with a silicon‐rich transition region. The composition and width of the nonhomogeneous oxide transition regions in ultrathin, thermally grown silicon oxide films are quantitatively evaluated in the present study using Si 2p binding energy and intensity data.Homogeneous reference films are used to relate Si 2p binding energies with oxygen content of the films. The determination of a mean escape depth for Si 2p photoelectrons from oxide films provides a relationship between Si 2p line intensities and oxide film thickness. Changes in Si 2p binding energies and intensity data are used to identify change...