Shutter Sequence Research Articles

Deep coded exposure: end-to-end co-optimization of flutter shutter and deblurring processing for general motion blur removal

Coded exposure photography is a promising computational imaging technique capable of addressing motion blur much better than using a conventional camera, via tailoring invertible blur kernels. However, existing methods suffer from restrictive assumptions, complicated preprocessing, and inferior performance. To address these issues, we proposed an end-to-end framework to handle general motion blurs with a unified deep neural network, and optimize the shutter’s encoding pattern together with the deblurring processing to achieve high-quality sharp images. The framework incorporates a learnable flutter shutter sequence to capture coded exposure snapshots and a learning-based deblurring network to restore the sharp images from the blurry inputs. By co-optimizing the encoding and the deblurring modules jointly, our approach avoids exhaustively searching for encoding sequences and achieves an optimal overall deblurring performance. Compared with existing coded exposure based motion deblurring methods, the proposed framework eliminates tedious preprocessing steps such as foreground segmentation and blur kernel estimation, and extends coded exposure deblurring to more general blind and nonuniform cases. Both simulation and real-data experiments demonstrate the superior performance and flexibility of the proposed method.

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by migration enhanced epitaxy while the second uses the antimony-for-arsenic exchange to promote an ‘InSb-like’ interface at the GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly strain-compensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 µm × 2 µm scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 µm at 77 K has been demonstrated with a dark-current level of 8.3 × 10−8 A/cm2 at −50 mV and a residual carrier concentration of 9.7 × 1014 cm−3, comparable to the state-of-the-art.

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an “InSb-like” interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the “GaAs-like” one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes

We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.

An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells

An atomic scale study has been performed to understand the influence of the (As,Sb) shutter sequences during interface formation on the optical properties of InGaAs/AlAsSb quantum wells. Our cross-sectional scanning tunneling microscopy results show that the onset of the Sb profile is steep in the Sb-containing layers whereas an appreciable segregation of Sb in the subsequently grown Sb free layers is observed. The steep rise of the Sb profile is due to extra Sb that is supplied to the surface prior to the growth of the Sb-containing layers. No relation is found between the (As,Sb) termination conditions of the Sb-containing layers and the resulting Sb profiles in the capping layers. Correspondingly we see that the optical properties of these quantum wells are also nearly independent on the (As,Sb) shutter sequences at the interface. Digital alloy growth in comparison to conventional molecular beam epitaxy growth was also explored. X-ray results suggest that the structural properties of the quantum well structures grown by conventional molecular beam epitaxy techniques are slightly better than those formed by digital alloy growth. However photoluminescence studies indicate that the digital alloy samples give rise to a more intense and broader photoluminescence emission. Cross-sectional scanning tunneling microscopy measurements reveal that lateral composition modulations present in the digital alloys are responsible for the enhancement of the photoluminescence intensity and inhomogeneous broadening.

Heterointerface engineering of broken-gap InAs/GaSb multilayer structures.

Broken-gap InAs/GaSb strain balanced multilayer structures were grown by molecular beam epitaxy (MBE), and their structural, morphological, and band alignment properties were analyzed. Precise shutter sequence during the MBE growth process, enable to achieve the strain balanced structure. Cross-sectional transmission electron microscopy exhibited sharp heterointerfaces, and the lattice line extended from the top GaSb layer to the bottom InAs layer. X-ray analysis further confirmed a strain balanced InAs/GaSb multilayer structure. A smooth surface morphology with surface roughness of ∼0.5 nm was demonstrated. The effective barrier height -0.15 eV at the GaSb/InAs heterointerface was determined by X-ray photoelectron spectroscopy, and it was further corroborated by simulation. These results are important to demonstrate desirable characteristics of mixed As/Sb material systems for high-performance and low-power tunnel field-effect transistor applications.

High quality mid-wavelength infrared InAs/GaSb superlattices by exploring the optimum molecular beam epitaxy growth process

In this paper we report on the growth of mid-wavelength infrared superlattice materials by molecular beam epitaxy. We focused on the effects of process parameters, such as arsenic beam equivalent pressure and shutter sequences, on the key material properties, such as the lattice mismatch and the surface morphology. Though a smaller As beam equivalent pressure helps to reduce the lattice mismatch between the superlattice and the GaSb substrate, the As beam equivalent pressure itself has a lower limit below which the material’s surface morphology will degrade. To achieve fully lattice-matched superlattice materials, a novel shutter sequence in the growth process was designed. With well-designed interface structures, a high quality P-I-N superlattice mid-infrared detector structure was realized. At 77K the dark current density at −50mV bias was 2.4×10−8A/cm2 and the resistance-area product (RA) at maximum (−50mV bias) was 2.4×106Ωcm2, and the peak detectivity was then calculated to be 9.0×1012cmHz1/2/W. The background limited infrared photodetector (BLIP) level can be achieved at a temperature of 113K.

Molecular beam epitaxial growth of AlSb/InAsSb heterostructures

Abstract AlSb/InAsSb heterostructures have been successfully grown on GaAs substrate by modulated molecular-beam epitaxy (MMBE). New shutter sequence has been presented and room temperature mobility of 16,170 cm 2 /V s has been achieved with our non-intentionally doped structures. With a view for optimization, we analyze variation of electron mobility induced by growth temperature and InAsSb thickness. By increasing growth temperature and thickness of InAsSb, improvement of electron mobility has been observed. With our optimized AlSb/InAsSb heterostructures, accurate control of composition in InAsSb alloy and reduced interface mixing have been confirmed by X-Ray diffraction and Raman spectroscopy measurements.

Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection

Herein, we report a type II InAs/GaSb superlattice structure (SLS) grown on GaSb(100) substrates by molecular beam epitaxy (MBE) and its electrical characterization for mid-wavelength infrared detection. A GaSb buffer layer was grown under optimized SLS growth conditions, which can decrease the occurrence of defects for similar pyramidal structures. The complications associated with these conditions include oxide desorption of the substrate, growth temperature of the SLS, the V/III ratio during superlattice growth and the shutter sequence. High-resolution X-ray diffraction (HRXRD) shows the sixth satellite peak, and the period of the SLS was 52.9Å. The atomic force microscopy (AFM) images indicated that the roughness was less than 2.8nm. High-resolution transmission electron microscopy (HRTEM) images indicated that the SLS contains few structural defects related to interface dislocations or strain relaxation during the growth of the superlattice layer. The photoresponse spectra indicated that the cutoff wavelength was 4.8μm at 300K. The SLS photodiode surface was passivated by a zinc sulfide (ZnS) coating after anodic sulfide.

A formalization of the flutter shutter

Acquiring good quality images of moving objects by a digital camera remains a valid question. If the velocity of the photographed object is not known, it is virtually impossible to tune an optimal exposure time. For this reason the recent Agrawal et al. flutter shutter apparatus has generated much interest. In this communication, we propose a mathematical formalization of a general flutter shutter method, also permitting non-binary shutter sequences. Thanks to this formalization, the question of the optimal flutter shutter code can be defined and solved. The method gives analytic formulas for the best attainable SNR for the restored image. It also gives a way to compute optimal flutter shutter codes.

Noise-optimal capture for coded exposure photography

Searching for the optimal shutter sequence is the key problem in coded exposure photography. Previous shutter sequence searching methods focus on the point spread function estimation and invertibility, and ignore the influence of the scene light level or avoid noise calibration of real cameras. For practical purposes, we address the problem of finding an optimal shutter sequence for coded exposure photography in the presence of photon noise. We analyze the effect of photon noise on the optimal shutter sequence in terms of deconvolution noise and derive analytic formulas. We show that Raskar's code is a special case of our analysis. Based on noise calibration of the coded exposure camera, an effective fitness function is proposed, and using our carefully designed genetic algorithm, we obtain the optimal shutter sequence with little running time. Experimental results with synthetic and real data demonstrate the advantage of our approach compared to the state of the art approach.

High-field magneto-photoluminescence of semiconductor nanostructures

The cover of this issue of Luminescence features a graph of the shutter sequence for 0.5-ms exposures at 17 diff erent fi eld values for an InGaAs linear array with 0.5-ms readout time as detector.

Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices

In InAs/GaSb superlattices (SLs) designed for infrared detection, the interfacial layers comprise approximately 10%–15% of the heterostructure. As interdiffusion into the InAs and GaSb layers is considered, this percentage is expected to be even higher. Although the primary goal for engineering these transient layers is to balance the SL strain to the GaSb substrate, the interfacial quality can impact the performance of the SL in other ways as well. Many believe that the majority of nonradiative defects that shorten carrier lifetime can be generated from the SL interfaces or regions near them due to the poor interface engineering. Because the degree of lattice mismatch tends to be higher in very long wavelength infrared InAs/GaSb designs, the approach tuning growth parameters to optimize the strain balancing process is different from that for midinfrared SLs. To investigate this optimization, a systematic approach was applied to achieve strain compensated 16 monolayers (MLs) InAs/7 MLs GaSb SLs aimed for a target onset wavelength of 15 μm. The authors systematically explored the effect of growth parameters, such as group V fluxes, growth rates, and shutter sequences, on the SL strain and interfacial quality. For this study, high-resolution x-ray diffraction and atomic force microscopy analysis were extensively used to monitor the effect of interfaces on material properties.

Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates

AbstractDepending on the shutter sequence used to initiate CdTe deposition, either (100) or (111) CdTe layers can be reproducibly grown on (100) ZnSe/GaAs substrates. Using a hexagonal surface model for (111) CdTe we propose a mechanism for the crystalline orientation selectivity. We use time‐resolved Kerr rotation to monitor the electron spin dynamics in these films. While the spin lifetime is found to depend on material quality, only (100) films show a clear temperature dependence, a peculiar feature we believe to arise from different residual strains in the layers with the two different orientations. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

We have developed a growth procedure for realizing a low defect density GaP layer on an Si substrate. The growth procedure consists of two parts. One is the post-growth annealing for the annihilation of stacking faults (SFs). We have investigated an annihilation mechanism with molecular beam epitaxy grown GaP layers. 1-monolayer-thick SFs typically generate from the GaP/Si interface in a non-annealed GaP layer. In a 700 °C annealed GaP layer, generation points of these SFs tend to shift toward the GaP surface. In a 730 °C annealed GaP layer, SFs density is effectively decreased. These results suggest that SFs are annihilated through the climb motion of two partial dislocations during the post-growth annealing. Another one is the optimized shutter sequence for migration enhanced epitaxy. We have revealed that it is effective for the suppression of both three-dimensional growth and melt-back etching to increase in a stepwise manner the number of supplied Ga atoms per cycle. As a result, the generation of threading dislocations and pits is remarkably suppressed. A root mean square surface roughness of 0.13 nm is obtained within the critical thickness. We have estimated etch pit density (EPD) to be ∼7×10 5 cm −2 with a GaPN/GaP/Si structure. To the best of our knowledge, this value is same as that of commercially available GaP substrates and is the lowest one in the EPD of GaP/Si heteroepitaxy.

Optical and electrical quality improvements of undoped InAs∕GaSb superlattices

The performance and operating temperature of infrared (IR) detectors are largely limited by thermal generation and noise processes in the active region of the device. Particularly, excess background charge carriers enhance dark currents and depress the detector figures of merit. Therefore, reducing the overall defects and background carriers in the undoped region of p-i-n diodes is an important issue for developing high-operating temperature IR detectors. In this article, the authors discuss how several postgrowth annealing conditions and interface shutter sequences are optimized to reduce the density of nonradiative defect trap centers and background carriers and studied their relevance to the photoluminescence (PL) emission qualities of typical mid-IR InAs∕GaSb superlattices (SLs). Among the several in situ postgrowth annealing temperatures investigated, the SLs annealed at 450°C had the highest carrier density and the lowest PL intensity, while the SLs annealed at 475°C had the lowest carrier density and the highest PL intensity. In situ annealing did not change the carrier type, but slightly reduced the carrier densities as compared to the as-grown SL sample of 1.8×1011cm−2. While in situ annealing improves the surface morphological quality and the PL intensity, ex situ annealing creates many surface pits and significantly reduces the PL intensity. The carrier density was sensitive to the variation in interface composition control. With a minor variation in the interface shutter sequence, the carrier density dramatically increased from ∼2×1011to5×1012cm−2, and the corresponding mobility decreased from 6600to26cm−2∕Vs, indicating a degradation of the interfacial quality. All of the SL samples investigated for this study were p-type.

Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy

Short period InAs(4 ML)/GaSb(8 ML) superlattices (SLs) with InSb- and mixed-like (or Ga1−xInxAs1−ySby-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.

Growth optimization for low residual carriers in undoped midinfrared InAs/GaSb superlattices

Reducing residual background carriers in InAs/GaSb superlattices (SLs) is an essential task to increase the operating temperature of photoconductive devices. This paper discusses how low-temperature Hall measurements were used to tune several SL growth parameters for the minimum residual carriers in a typical midinfrared 21 Å InAs/24 Å GaSb SLs designed for the 4 μm cutoff wavelength. Among the three growth parameters studied, neither growth temperature nor in situ postannealing significantly affected the intrinsic carrier type and doping concentration. The lowest carrier density of 1.8×1011 cm−2 was achieved at 400 °C. All SLs grown at 400 °C maintained the lowest density around 1.6×1011 cm−2 with or without postannealing. However, in-plane carrier mobility showed a slight improvement with annealing, especially at temperatures above 450 °C. The growth parameter most sensitive to the carrier density was interface control. With a minor variation in interface shutter sequence, the carrier density dramatically increased from ∼2×1011 to 5×1012 cm−2, and the corresponding mobility dropped from 6600 to 26 cm2/V s, indicating dramatic degradation of interfacial quality. All SLs investigated in this study were residually p-type.

Structural characterisation of Sb-based heterostructures by X-ray scattering methods

Antimonide-based superlattices dedicated to the elaboration of opto-electronic devices have been studied by X-ray scattering techniques. In particular, specular and non-specular X-ray reflectometry experiments have been performed on two MBE-samples elaborated with different shutter sequences at the interfaces. The results have shown a limitation of the incorporation of Sb species in the subsequent InAs layer for one of the samples, as expected. Then, a study on a InGaAs-cap layer/(InGaAs/AlAsSb) N superlattice grown on a InGaAs/InP buffer layer by both specular X-ray reflectometry and High resolution X-ray diffraction is reported. In particular, the results have revealed the presence of a highly disturbed thin-layer on top of the MOVPE-made GaInAs, whose presence has been explained by In-concentration modification during the desoxidation procedure at the surface of the MOVPE-made GaInAs. Beside the results on the Sb-based heterostructures, the use of X-ray scattering metrology as a routinely working non-destructive testing method has been emphasized.