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Abstract
AbstractDepending on the shutter sequence used to initiate CdTe deposition, either (100) or (111) CdTe layers can be reproducibly grown on (100) ZnSe/GaAs substrates. Using a hexagonal surface model for (111) CdTe we propose a mechanism for the crystalline orientation selectivity. We use time‐resolved Kerr rotation to monitor the electron spin dynamics in these films. While the spin lifetime is found to depend on material quality, only (100) films show a clear temperature dependence, a peculiar feature we believe to arise from different residual strains in the layers with the two different orientations. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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