Abstract
The authors demonstrate control of the crystalline orientation [(100) or (111)] of molecular beam epitaxy-grown CdTe films on (100) ZnSe/GaAs substrates. Reflection high-energy electron diffraction is used to observe the nucleation of the epitaxial layers in situ during growth. X-ray diffraction and photoluminescence measurements indicate that in both cases, the CdTe film is of high structural quality despite the large lattice constant mismatch of 14.3% between CdTe and ZnSe. They also use time-resolved Kerr rotation to monitor the electron spin dynamics in these films. While the spin lifetime is found to depend on material quality, only (100) films show a clear temperature dependence, a peculiar feature they believe to arise from residual strain.
Published Version
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