Band edge thermometry was used to measure the temperature of 4H SiC substrates, band gap of 3.25 eV, during heat-up followed by molecular beam epitaxial growth of GaN structures. The surface of the rotating wafer was illuminated with a white light source which provided sufficient scattered signal for SiC substrate temperature measurements of single side polished substrates and unmetallized double side polished substrates. Substrate temperatures above 400 °C could be measured with good signal-to-noise ratio. At 750 °C the precision was ±1 °C despite the small temperature dependence of the SiC band gap. A complete spectral interference oscillation was observed for a layer thickness of 800 Å. The scattered intensity was found to be dependent on whether gallium- or nitrogen-rich growth conditions were used. During conventional gallium-rich GaN growth on unmetallized, double sided polished substrates, the thermometer detected an increase in wafer temperature due to the presence of surface gallium. A similar adatom self-heating effect was observed with indium.
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