The waffle iron is a short bit-length, closed flux-path, magnetic storage device. It consists of a high permeability base plate into which orthogonal slots have been cut, leaving a sequence of rectangular posts, giving the surface the appearance of a miniature waffle iron. To complete the array, a wiring pattern is placed into the slots and an overlay of square-loop magnetic material is laid across the tops of the posts. A closed flux-path structure consisting of a short length of this square-loop material and a longer length of high permeability material is thus formed by each pair of posts. Because of the structure of the device almost complete machine manufacture seems feasible. Many experimental models of both destructive and nondestructive read memories have been built. All of the models feature the ``two-core per bit'' type of operation, and consequently, have good operating margins. One model, which has been tested extensively, has a 0.030-in. bit length. It is a linear select memory and has an output of greater than 100 mV with a duration of 0.25 μsec for a read current of 0.8 A. The write requirements are 0.3-A word and 0.15-A bit current with an allowable variation on each of ±35%. Time to write is 2 μsec. A second model which has been tested extensively is an electronically alterable, nondestructive read memory of the bimagnetic material type. The read repetition rate is greater than one megacycle and the write time is 5 μsec. With a bit length of 0.020 in. the read, word-write, and bit-write currents are 0.35 A, 0.45 A, and 0.3 A, respectively. The word- and bit-write currents have an allowable variation of ±35% each. Experiments with memory arrays using the waffle-iron technique have shown that bit lengths of 0.005 in. or less and read-write cycle times of less than 0.5 μsec are feasible. With such short bit lengths, both the packing density and the field efficiency are high, (approximately 1000 bits per square in. and 100 Oe per A). Consequently, the waffle-iron structure is suitable for high-speed memory applications, where small size and potentially low drive currents are of prime importance.