In this paper, a family of single-phase single-stage high-gain dual-buck split-source inverters (SSIs) is proposed. The proposed inverters have the combine benefits of SSI, dual-buck inverter (DBI), and high-gain dc–dc converters. Similar to the DBI, they provide high reliability by eliminating shoot-through issues, increase switching frequency and efficiency by using power MOSFETs without leading the body diodes to reverse recovery issues, and decrease pulsewidth modulation (PWM) dead-time. In addition, voltage boost operation is achieved in a single stage without using any additional active switch, which is in favor of lower control complexity and lower cost. On the other hand similar to the SSI, buck–boost dc–ac power conversion is realized in a single stage. However, compared to the SSI, the proposed inverters have no shoot-through issues, MOSFETs can be used without reverse recovery issues, dead-time can be minimized, switching frequencies can be increased, and external fast recovery diodes can be used to improve efficiency. In addition, four different high-gain dual-buck SSIs are presented. As an example, the proposed switched-coupled-inductor split-source DBI is analyzed and compared with the other proposed structures. To validate the theoretical analysis, a 300-W experimental prototype is designed and tested at 25–35-V input voltage, $155~V_{\text {peak}}$ output voltages and 50 kHz.
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