Influence Of Series Resistance Research Articles

A self consistent approach to IV-measurements on rectifying metal-semiconductor contacts

An experimental procedure is presented for the determination of the barrier height of metal-semiconductor contacts that avoids the use of the so called “ideality factor” n, common in the fit of experimental IV-data. We choose the commonly experienced case where the deviation of n from 1 is caused by a combination of recombination current contribution and the influence of series resistance. These effects are introduced into a computer fitting to the experimental forward IV data. We report on very good fitting of theory and experiment. Also, the discrepancy in the φ B values determined by ordinary deduction from IV measurements and those obtained from photoelectric measurements practically vanishes if our procedure is used.

Influence of series resistance and internal capacitance on the forward voltage decay in a p- n junction

Influence of series resistance and internal capacitance on the forward voltage decay in a p- n junction

Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance

The electron mobility behaviour in submicron MOSFETs is studied in the temperature range of 77–300 K. As the effective channel length is reduced, the effective mobility as well as the field-effect mobility are found to decrease and to become less temperature dependent. These experimental results are explained by the influence of series resistance and effective channel length, which are both temperature dependent. The possibility of accurate determination of series resistance and “pure” mobility is demonstrated. A new method is proposed to determine submicron MOSFET channel length at low temperatures.

Operation model of floating-Si-gate channel-corner-avalanche-transition (FCAT) nonvolatile memory devices

A write/erase model is described for FCAT nonvolatile memory devices which perform write/erase operations with 10–20 V pulses of less than 100-1 μs duration. The amplitude of the threshold voltage shift is analyzed as a function of the source and gate pulse amplitudes using a sample equivalent source circuit. The high level saturated threshold voltage, V TH , obtained by electron injection into the floating gate and the low level saturated threshold voltage, V TL , due to hole injection are shown to be linear functions of V G and V S , and the analysis agrees well with experimental results. The influence of series resistance, including substrate resistance, in the source circuit is also discussed.

Comparative Study of the Influence of Series Resistance on the Magnitude and Peak Potential of A.C. Polarographic Peaks at the D.M.E.

Comparative Study of the Influence of Series Resistance on the Magnitude and Peak Potential of A.C. Polarographic Peaks at the D.M.E.