Abstract In response to the problem of adverse effects on circuit elements caused by the reverse recovery characteristics of electromagnetic railgun freewheeling silicon stack during the sequential discharge process of pulse forming network, this paper uses the existing diode reverse recovery model and simulates the I-t and U-t change curves during the diode reverse recovery process through numerical calculation methods, obtaining results that are consistent with expectations. And through the pulse forming network composed of two modules in parallel, the changes in load voltage during the PFN timing discharge process were analyzed, and the impact of the reverse recovery process of the freewheeling diode on the power module was analyzed. Explored the influence of storage time and recovery time on the peak reverse current and maximum current change rate during reverse recovery process, and verified the correctness of the theory that if the reverse recovery time is too short, it can also cause damage to semiconductor components in the circuit.
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