Towards a signal readout circuit for a highly sensitive stack-type image sensor, an entire transparent thin-film transistor (TFT) array using an amorphous In–Ga–Zn–O channel and indium–tin oxide electrodes was fabricated. The pixel pitch and number of pixels were 50 µm and 128×96, respectively. The transmittance of the TFT array for visible light reached up to 85%. The array also showed good switching characteristics. A monochromatic image sensor with a zinc phthalocyanine organic photoconductive film was fabricated using this array, and it produced clear images at 30 frames per second with a resolution corresponding to the pixel number.