In the contemporary international system, technological capability has emerged as a critical determinant of national power. Among advanced technologies, semiconductors occupy a central position due to their essential role in economic productivity, military modernization, and digital infrastructure. Consequently, semiconductor production and supply chains have shifted from being primilarly commercial concerns to becoming strategic key aspects within global politics. This transformation is mostly evident in the intensifying technological rivalry between the United states and China. The United States and China perceive technological leadership as fundamental to maintaining or enhancing their positions within the international system. The United States seeks to preserve its dominance in advanced technologies and restrict competitors access to critical inputs, particularly high-end semiconductor. China, in contrast aims to reduce technological dependency on external suppliers and achieve self-reliance through state-led industrial strategies. This rivalry has elevated semiconductors to the forefront of geopolitical competition, where export controls, industrial policy, and strategic alliances play a decisive role. Within this global context, Taiwan occupies a uniquely strategic position. As home too the Taiwan Semiconductor Manufacturing Company (TSMC). Taiwan dominates advanced chip manufacturing and serves as a critical node in global supply chains. This dominance has increased Taiwan's geopolitical significance while simultaneously intensifying external pressures, particularly from China, which views reliance on Taiwanese chips as a strategic vulnerability. Taiwan's internal political dynamics are closely linked to external pressures arising from U.S. China competition. The semiconductor industry is increasingly framed by policymakers as a strategic national asset, shaping both domestic priorities and foreign policy choices. While Taiwan's technological centrality provides strategic leverage, often described as a "silicon shield" it also deepens the island's exposure to great power rivalry. Consequently, Taiwan's security and political trajectory are shaped by the interaction between global technological competition and domestic decision making. Received: 31 January 2026 / Accepted: 18 February 2026 / Published: March 2026

Metal nanoclusters (MNCs)-semiconductor (SC) composite materials have garnered significant attention due to the fascinating and versatile properties exhibited by MNCs. However, there is a scarcity of efforts directed toward incorporating metal nanoparticles (MNPs) into MNCs-SC composites to facilitate charge generation within the system. And the underlying mechanism governing charge transfer in such systems remains elusive. In this work, a straightforward reduction-adsorption strategy was employed to ingeniously introduce AuNCs into the AgNPs@MoS2 binary nanostructure. This approach effectively improves the electron-donating performance of resulting AuNCs-AgNPs@MoS2 ternary heterostructures, which were utilized as the substrates for SERS-active p-nitrothiophenol (PNTP)-catalytic reactions. PNTP-catalytic experiments further validated the enhanced catalytic performance arising from the introduction of AuNCs into the ternary heterostructure. Furthermore, the composite mechanism of AuNCs and AgNPs in the nanosystem was elucidated, revealing that AgNPs act as charge bridges and synergistically facilitate charge generation in conjunction with AuNCs. The electron-donating capability was quantified using the concept of charge transfer degree, rendering the impact of AuNCs incorporation on charge yield more intuitive. This study is anticipated to provide a rational approach for the construction of MNCs-MNPs@SC ternary nanostructures and optimizing the synergistic interaction between MNCs and MNPs, thereby enabling their applications across diverse fields.

Abstract Degradation of cross-linked polyethylene (XLPE) insulations by vented water treeing is a phenomenon that can limit the lifetime and reliability of subsea power cables, as well as their voltage rating. Recent studies have shown that inorganic impurities embedded in the bulk of the semi-conductive (SC) screens can be responsible for inception and growth of vented water trees through channel-like nanostructured tracks. Characterization of the entire region of interest, stretching from the contaminant to the vented water tree, has proven challenging with conventional techniques. Here we have developed a qualitative methodology based on synchrotron wide-angle x-ray scattering to spatially locate crystalline impurities in the cable insulation system, enabling detection of very small impurities in a large bulk sample. NaCl was the dominant crystalline impurity and was present in the voids, along the nanostructured tracks in the SC screen and the vented water trees. Trace amounts of NaCl were also detected within a large volume of an unaged cable screen, indicating that impurities are present prior to exposure of the cables to standardized tests including elevated water temperature. These results provide crucial information about the chemical prerequisites for the formation of the nanostructured track degradation causing inception of long vented water trees at the SC screen/XLPE interface.

Solar-driven hydrogen evolution through photoelectrochemical (PEC) water splitting technology provides a prospective approach for green energy production. To accomplish reliable PEC systems with sufficient solar-to-hydrogen conversion efficiencies (STH, ≥10%), one of the current primary challenges lies in the design and fabrication of highly-performing semiconductor (SC) photoanodes to overcome its high overpotential requirement and sluggish surface oxidation kinetics. The emergence of low-dimensional layered transition metal dichalcogenides (TMDs) with extraordinary electronic and optical properties has gained considerable attention and they are inarguably promising photoanode candidates. The rational combination of TMDs interfaced with other SC photoabsorbers via energy band modulation and heterojunction formation can markedly improve PEC performance and solar conversion. In this context, this review begins with a description of the PEC water oxidation mechanism, efficiency-related parameters, band bending and charge transfer behavior within n-type SC photoanodes, followed by an overview of recent progress and our contributions in fabricating efficient TMD-based heterostructure photoanodes with various synthetic routes and architectures. Next, the unique superiorities and positive effects of TMD utilization, such as optimized light harvesting, regulated electron transfer channels, promoted charge separation and transport, and improved long-term photostability, were comprehensively summarized in various TMD/SC heterostructure photoanode systems. Finally, the remaining challenges and future opportunities in advancing TMD-based van der Waals heterostructure photoanodes for next generation PEC water splitting applications are addressed.

BackgroundIn the late 1940s, the Hodgkin and Huxley model of ion transport as the basis for neural signal transmission was born. A revolution in pharmaceutical management of many diseases ensued. Bardeen et al. developed the first transistor. The technological revolution in our lives ensued. Neural signaling as electromagnetism, prominent before then, faded. But recently the synapse has been modeled as a PNP Bipolar Junction Transistor (BJT), with the electron as the neurotransmitter, while the traditional “neurotransmitters” are vital modulators of the electrical milieu (bias as engineers say) that determines the operation of the BJT. Alzheimer's Disease (AD) is characterized by decreased signaling, usually ascribed to Tau and Aβ. A transistor model provides new insight into the atomic level changes that cause Mild Cognitive Impairment and early AD.MethodCombining concepts and knowledge of synaptic structure and composition, transistors, organic semiconductors (SCs), and quantum chemistry, a model of the synaptic transistor explains MCI and early AD.ResultA PNP‐BJT has 4 critical components: an N‐type SC sandwiched by 2 P SCs, an intrinsic power supply, and a “space charge” region at each p‐N junction. The corresponding structures in the synapse are:1. N‐substance: The two lipid polar heads of the synapse with the structured water in the cleft;2. 2 P substances: The hydrocarbon chain of the outer leaf of each synaptic membrane with docosahexaenoic acid (DHA) with its 6 pi bonds;3. Intrinsic Power Supply: Peri‐synaptic Glutamate(Glu) receptors converting Glu(Negatively charged) to GABA(Neutral) + CO2 (Neutral) + e‐;4. Space Charge Heterojunction: Molecular orbital distribution or energy levels affecting electron density at the space around DHA carbon chain and the polar head.ConclusionAll critical synaptic BJT components and their function are altered in MCI and early AD. MCI and early AD are characterized by decreased DHA (decreasing electron and hole conduction through the P SC), altered glutamate receptors (affecting the intrinsic power supply to the synaptic BJT), and hyperphosphorylated Tau affecting electrical bias mostly via changes in electrochemical properties of the interstitial matrix which forms the base terminal of the transistor. These processes are independent of tangles and plaques from late AD.

Photoelectrochemical (PEC) water splitting offers a direct path to generate hydrogen from water and sunlight using semiconductor (SC) materials. The hydrogen can be stored and utilized as sustainable fuel to satisfy the energy demand in an environmental friendly economy.[1] Molecular-oxide hybrid devices provide great opportunities to combine high catalytic activity regarding photocatalytic water splitting with long-term stability.[2,3] The investigation of the hybrids requires a well-known oxide absorber, that is very photostable, enable a fast charge transfer to the catalyst and has a well-suited electronic bandstructure, where photo-excited hole states can capture the electrons from electrocatalytic water oxidation. One promising candidate is the oxide bismuth vanadate (BiVO4) that shows high photocatalytic activity for PEC water splitting reaction.[4] We show a systematic study of the time-resolved photocatalytic activity of BiVO4 thin film absorbers with a highly functionalized surface deposited on conducting Nb-doped SrTiO3 substrates. The BiVO4 films were photo-electrochemically investigated at neutral pH with an aqueous phosphate buffered electrolyte via cyclovoltammetry. Rotating ring disk electrode (RRDE) experiments in the dark and under illumination (LED 1.5 AM spectrum) allowed distinguishing between the oxygen evolution reaction and other processes such as photo-induced capacitive changes. The experiments aim to understand the electron charge transfer from water molecules into the BiVO4 surface under illumination and different applied bias. First promising steps to extend such studies to hybrid systems are pursued, where high-efficient Ru-based molecular catalysts well-designed for OER are anchored on different SC surfaces.[1] E. L. Miller, Energy Environ. Sci. 2015, 8, 2809-2810.[2] R. Matheu et al., Nature Rev. Chem. 2019, 3, 331;[3] J. Odrobina, J. Scholz et al, ACS Catal. 7, 2017, 6235.[4] F. Abdi et al, J. Phys. D: Appl. Phys. 2017, 50, 193002.

The recent study on spin-transfer torque (STT) in resonant-tunneling magnetic tunnel junctions (RT-MTJs) utilizing an ultra-wide-bandgap semiconductor (SC) [Formula: see text]-Ga2O3 presents significant advancements in spintronic technology. This research employs a tight-binding model (TBM) to analyze electronic transmission demonstrating that [Formula: see text]-Ga2O3 substantially enhances STT performance compared to traditional materials like ZnO SC and nonmagnetic metals (NMs).

Surface modification is an effective method to realize high performance photoelectrodes. While current investigations mostly aim to leverage surface layers for improved charge carrier kinetics during charge separation, interfacial charge transfer, and decreased recombination, carrier transport within the surface layer is largely unattended. Herein, we explore this charge transport process on a model photocathode consisting of p-Si and GaP semiconductors (SCs) that are coated with a redox-active Zn-NDI (NDI = naphthalene diimide bis-pyrazolate) metal-organic framework (MOF) surface layer. The MOF layer is able to accept photogenerated electrons and support a large photovoltage of the underlying SC. In addition to well-established carrier generation and interfacial transfer processes that are frequently considered to control photocurrents, experimental photoelectrochemical data of the MOF@SC electrodes expose limitations that arise from electron transport in the surface layer coating. The transport-limited regime becomes relevant when the illumination intensity is gradually increased and is sensitive to the nature of the underlying semiconductor as well as the electrolyte. The phenomenon reported in this work is likely present in other surface-modified photoelectrodes with thick cocatalysts or redox-active polymer coatings but can easily be overlooked. In the MOF@SC construct, the transition between different limiting regimes can be visualized owing to the well-behaved cation-coupled photoelectron hopping transport in the MOF layer. These findings support the design and realization of efficient photoelectrodes.

ABSTRACTElectric vehicles (EVs) are emerging as a leading option for traveling while considering the reduction in greenhouse gases (GHG) and corresponding expenditure of fossil fuels. Besides, microgrid (MG) operations pave the way for the development of renewable resources (RRs) based EV charging stations. The paper presents charging circuitry for EVs, designed with a two‐stage conversion mechanism, DC‐DC and hybrid grid in the MATLAB (SIMULINK) environment while using wide bandgap (WBG) semiconductors (SCs) like IGBTs and MESFETs. Power flow in DC and Hybrid‐microgrid (HMG) is supplied with the help of an isolated bidirectional battery charger with the potential of 1.5 kW at 120 V. The AC‐DC conversion is achieved through an inverter, while the rectification mechanism is used for DC‐DC conversion. The designed circuitry also employs four switches, operating at a high frequency, used with a PI controller to maintain the output of 120 V DC for battery charging. The remaining two controllers in the presented circuitry are used for the discharge system of the battery. The paper also presents a detailed comparative analysis of the conduction losses, measured for EV integration and future interventions while considering WBG‐SCs. The examination of the achieved results reveals that minimum losses are in the case of the DC grid system. The investigation of the results also shows lesser harmonic distortion for the DC grid in contrast to the other considered case. Results underline the insinuations of substance‐synchronized EV charging to condense adversative functioning impacts and associated ventures.

The coupling of semiconductor (SC) and transition metal oxyhydroxide (TMOOH) is a promising approach for solar fuel production. However, the inevitable interfacial charge recombination and sluggish oxygen evolution reactions severely hinder the application of photoelectrochemical (PEC) device. This study demonstrates an innovative charge polarization strategy that simultaneously enhances both long‐range charge transfer and surface catalytic reaction dynamics through the rational construction of CoOx/MnOx heterointerface in SC/TMOOH system. Kelvin probe force microscopy, in situ ultraviolet/visible spectroelectrochemistry, and density functional theory calculations indicate that the tunable charge polarization of Coδ− and Mnδ+ can affect influences the SC/TMOOH and TMOOH/electrolyte interfaces, primarily through inducing the accelerated charge transfer dynamics (Kh) and diminishing the adsorption of oxygen‐containing intermediates. As anticipated, the BiVO4/CoOx/MnOx/FeNiOOH exhibits an impressive photocurrent of 6.75 mA cm−2 at 1.23 VRHE, along with a superior photostability. Furthermore, the smart approach can also be harnessed in the BiVO4/CoOx/CeOx/FeNiOOH photoanode. This study provides a novel polarization strategy for the design of optimal photoanodes for PEC water splitting.

Abstract The loading of transition‐metal oxyhydroxide (TMOH) on semiconductor (SC) has been recognized as a promising approach for promoting photoelectrochemical (PEC) water splitting. Nonetheless, major challenges such as substantial carrier recombination and slow surface water oxidation continue to hinder the achievement of desirable PEC performance. This study proposes a feasible ligand engineering strategy to simultaneously boost charge separation and surface catalytic kinetics through coordinating 2‐methylimidazole (2‐MI) within a SC/TMOH system. In situ ultraviolet/visible spectroelectrochemistry (UV/vis‐SEC) and density functional theory (DFT) calculations show that the coordination of the 2‐MI ligand influences SC/TMOH and TMOH/electrolyte interfaces, notably enhancing the dynamics of hole transfer while simultaneously reducing the adsorption of oxygen‐containing intermediates. As anticipated, the BiVO4/FeNiOOH/2‐MI photoanode demonstrates an impressive photocurrent of 6.52 mA cm−2 at 1.23 VRHE, featuring excellent photostability and a low onset potential of 0.35 VRHE. Additionally, the 2‐MI molecule can be employed in the development of alternative configurations, such as BiVO4/FeNiOOH (soak)/2‐MI, to improve PEC efficiency. This work opens a new horizon in designing of desirable photoanodes for efficient and stable PEC water splitting.

Full-shell hybrid nanowires (NWs), structures comprising a superconductor shell that encapsulates a semiconductor (SM) core, have attracted considerable attention in the search for Majorana zero modes (MZMs). However, the predicted Rashba spin-orbit coupling (SOC) in the SM is too small to achieve substantial topological minigaps. In addition, the SM wavefunction spreads all across the section of the nanowire, leading typically to a finite background of trivial subgap states with which MZMs may coexist. To overcome both problems, we explore the advantages of utilizing core-shell hole-band NWs as the SM part of a full-shell hybrid, with an insulating core and an active SM shell. In particular, we consider InP/GaSb core-shell NWs, which allow to exploit the unique characteristics of the III-V compound SM valence bands. We demonstrate that they exhibit a robust hole SOC that emerges from the combination of the intrinsic spin-orbit interaction of the SM active shell and the confinement effects of the nanostructure, thus depending mainly on SM and geometrical parameters. In other words, the SOC is intrinsic and does not rely on red electric fields, which are non-tunable in a full-shell hybrid geometry. As a result, core-shell SM hole-band NWs are found to be a promising candidate to explore Majorana physics in full-hell hybrid devices, addressing several challenges in the field.

Abstract Solar‐driven photoelectrochemical (PEC) water splitting provides a highly promising solution for converting solar energy to chemical fuels. The semiconductor (SC) based photoanode often exhibits enhanced PEC performance when coated with a transition metal compound (TMC) overlayer that is merely regarded as a cocatalyst for the oxygen evolution reaction (OER). However, the origin of this improvement and the distinct roles of TMCs remain controversial topics. This is mainly due to a lack of advanced characterization techniques that can in operando capture the photogenerated charge transfer dynamics in such multicomponent SC/TMC systems. Herein, how the aforementioned issue can be addressed using in situ visualization characterization is presented, i.e., scanning photoelectrochemical microscopy (SPECM), and ultraviolet/visible‐spectroelectrochemistry (UV/vis‐SEC). By employing these techniques to BiVO4 (BV) combined with various TMCs (e.g., CoPi, Ni(OH)x, and Fe(OH)x), it is found that in addition to the superior OER activity of TMC overlayers, special attention should be paid to the fast hole transfer dynamics, especially for achieving the desirable PEC performance. As expected, further loading iron‐nickel oxyhydroxide (FeNi‐H) layer onto the BV/Fe(OH)x photoanodes (relatively fast hole transfer ability), the BV/Fe(OH)x/FeNi‐H achieves the highest photocurrent density among all counterparts.

The combined insulation interface of a high-voltage cable and accessories is the weakest part of a cable system. In this paper, the parameters of the dielectric constant, thermal conductivity, and elastic modulus of cross-linked polyethylene (XLPE) and silicone rubber (SIR) are obtained experimentally. On this basis, the model of a specific type of 110 kV cable and prefabricated insulation joint is established. A simulation of the electric–thermal–stress coupling field in the presence of typical defects in the main insulation–inner semi-conductive (SEMI) shielding layer (XLPE/SEMI interface) and the main insulation–silicone rubber insulation layer (XLPE/SIR interface) is studied. The simulation results show that at the XLPE/SIR interface, the electric field distortion caused by bubble defects reached 20.17 kV/mm, and the temperature rose to 56.15 °C. The effect of air-gap defects on the interface is similar to that of bubble defects. In addition, the semi-conductive impurity defects induced an increase in temperature to 56.82 °C and an increase in stress to 0.32 MPa. At the XLPE/SEMI interface, the electric field distortion induced by bubble defects was 19.98 kV/mm, and the temperature rose to 61.72 °C. The electric field distortion caused by metallic and semi-conductive defects was 8.44 kV/mm and 8.64 kV/mm, respectively. This study serves as a reference for the fault analysis and the operation and maintenance of cable accessories.

Nicolas Collins: Semi Conducting: Rambles Through the Post-Cagean Thicket

Low oxidation state engineering in transition metal-based interfacial regulation layer accelerates charge transfer kinetics toward enhanced photoelectrochemical water splitting

Dye-sensitized solar cells are considered a highly promising alternative method for generating electrical power. The DSSC is a photoelectrochemical device designed to efficiently convert solar energy into electrical energy. Titanium dioxide (TiO2) is the most suitable semiconductor oxide for use in DSSC due to its low-cost materials, easy manufacturing, lack of toxicity, and biocompatibility. Titanium dioxide, or TiO2, is a highly promising substance utilised in the application of dye-sensitized solar cells as semi conducting layers. The preparation of TiO2 nanoparticles obtained from using sol-gel method. This paper is to study the effect of the thickness of the semi conducting layer on the performance of the DSSC application. The electrical properties show that the current for 1 layer is the highest among others different thickness. It happens because shorter diffusion routes in thinner TiO2 layers can help electrons move quicker through the semiconductor material and thinner TiO2 layers lower the distance required for photogenerated electrons to get to the conductive substrate. From the result of UV-Vis, the absorption coefficient rises when the transmittance falls, and more light is absorbed as a result. A higher absorption coefficient is connected with more light absorption. The bandgap, as determined by the Tauc plot, determines the material's capacity to absorb light at specific energy levels, which contributes to its usefulness in DSSC applications. The XRD pattern shows that the TiO2 5 layer has the highest crystallinity and TiO2 paste from 2 layer until 5 layer is anatase phase.

A novel approach to analyzing the stability of physical fields in semiconductor materials under photothermal excitation

Electrical generation and transduction of polarized electron spins in semiconductors (SCs) are of central interest in spintronics and quantum information science. While spin generation in SCs is frequently realized via electrical injection from a ferromagnet (FM), there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), the efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer (SAM) of chiral molecules (α-helix l-polyalanine, AHPA-L), is demonstrated. The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional SC. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free SC spintronics.

This work presents the excess noise and thermoelectric (Seebeck) measurements on polycrystalline vanadium dioxide (VO2) thin films. Noise spectral power density (SPD) of current fluctuations in the semiconducting (SC) phase had a typical flicker noise (f−γ) characteristic with an average slope parameter γ of 1.13. Normalized SPD (Sn) values obtained in the SC-phase indicate that the noise originates in the bulk of the film. On the contrary, in the metallic (M)-phase, γ values were greater than unity, and the observed Sn values indicated that the origin of the noise is most likely from the contacts or surface rather than the bulk. A general decrease was observed in Sn by a factor of 4–5 from the SC- to M-phase. Moreover, Sn in the SC-phase showed no temperature dependence. An interpretation based on the number of charge carrier fluctuations in Hooge's model led to an unrealistically high Hooge parameter and had to be ruled out. We propose that the fluctuations are related to the mobility fluctuations of carriers arising primarily from grain-boundary scattering which explains the observed characteristics well. The Seebeck coefficients (S) obtained under both heating and cooling schedules showed the n-type nature of magnetron-sputtered VO2 films in the SC-phase. Differently, in the M-phase, the S value was positive. The S values obtained from the cooling schedule signified the low percolation threshold of the metal-to-insulator transition already demonstrated for VO2 thin films grown on r-cut sapphire using the Efros–Shklovskii percolation model.