Semiconductor Temperature Sensors Research Articles

Design and Implementation of Temperature Sensor Based on Dynamic Current Gain Compensation Technology

Complementary metal oxide semiconductor (CMOS) temperature sensors are widely used in on-chip systems for their low cost, high integration and low power consumption. A temperature sensor based on parasitic transistor front-end and dynamic current compensation technology is proposed in this paper, which is used to detect temperature in CMOS bipolar junction transistor. In this paper, the parasitic bipolar junction transistor (BJT) device in CMOS process and its temperature sensing principle are introduced, and a temperature sensor based on BJT temperature sensing front-end and dynamic current compensation technology is proposed. In this scheme, the high-resolution current comparator dynamic current compensation technology is used instead of the large capacitance which is necessary in the traditional current domain temperature sensor, which not only ensures the accuracy of the temperature sensor, but also ensures the accuracy of the temperature sensor, it also saves area and power consumption. The sensor’s control circuit uses a novel bucket search algorithm that allows current measured temperature values to be obtained by comparing as few times as possible. In addition, threshold setting technology is adopted to further improve the temperature sensing accuracy with lower power consumption and area cost. In the end, the test results and analysis are introduced. The CMOS temperature sensor proposed in this paper has been used in the standard 55 nm CMOS process. The test results show that the temperature range from −15 °C to 90 °C, the temperature measurement error is ± 0.5 °C and the area is only 0.021 mm2 after single point calibration.

Drone-Based Vertical Atmospheric Temperature Profiling in Urban Environments

The accurate and detailed measurement of the vertical temperature, humidity, pressure, and wind profiles of the atmosphere is pivotal for high-resolution numerical weather prediction, the determination of atmospheric stability, as well as investigation of small-scale phenomena such as urban heat islands. Traditional approaches, such as weather balloons, have been indispensable but are constrained by cost, environmental impact, and data sparsity. In this article, we investigate uncrewed aerial systems (UASs) as an innovative platform for in situ atmospheric probing. By comparing data from a drone-mounted semiconductor temperature sensor (TMP117) with traditional radiosonde measurements, we spotlight the UAS-collected atmospheric data’s accuracy and such system suitability for atmospheric surface layer measurement. Our research encountered challenges linked with the inherent delays in achieving ambient temperature readings. However, by applying specific data processing techniques, including smoothing methodologies like the Savitzky–Golay filter, iterative smoothing, time shift, and Newton’s law of cooling, we have improved the data accuracy and consistency. In this article, 28 flights were examined and certain patterns between different methodologies and sensors were observed. Temperature differentials were assessed over a range of 100 m. The article highlights a notable accuracy achievement of 0.16 ± 0.014 °C with 95% confidence when applying Newton’s law of cooling in comparison to a radiosonde RS41’s data. Our findings demonstrate the potential of UASs in capturing accurate high-resolution vertical temperature profiles. This work posits that UASs, with further refinements, could revolutionize atmospheric data collection.

A Hybrid Lister‐Outrigger Probe for Rapid Marine Geothermal Gradient Measurement

AbstractWe have successfully constructed and tested a new, portable, Hybrid Lister‐Outrigger (HyLO) probe designed to measure geothermal gradients in submarine environments. The lightweight, low‐cost probe is 1–3 m long and contains 4–12 semiconductor temperature sensors that have a temperature resolution of 0.002°C, a sample rate of <2 s, and a maximum working depth of ~2,100 m below sea level (mbsl). Probe endurance is continuous via ship power to water depths of ~700 mbsl or up to ~1 week on batteries in depths >500 mbsl. Data are saved on solid‐state disks, transferred directly to the ship during deployment via a data cable, or transmitted via Bluetooth when the probe is at the sea surface. The probe contains an accelerometer to measure tilt, internal pressure, temperature, and humidity gauges. Key advantages of this probe include (1) near‐real‐time temperature measurements and data transfer; (2) a low‐cost, transportable, and lightweight design; (3) easy and rapid two‐point attachment to a gravity corer, (4) short (3–5 min) thermal response times; (5) high temporal/spatial resolution; and (6) longer deployment endurance compared to traditional methods. We successfully tested the probe both in lakes and during sea trials in May 2019 offshore Montserrat during the R/V Meteor Cruise 154/2. Probe‐measured thermal gradients were consistent with seafloor ocean‐drilling temperature measurements. Ongoing probe improvements include the addition of real‐time bottom‐camera feeds and long‐term (6–12 months) deployment for monitoring.

Analysis and research of methods of linearization of the transfer function of precision semiconductor temperature sensors

The analysis of the nonlinearity of the transfer function of primary temperature transducers based on transistor structures has been performed. It’s shown that the quadratic component of the transfer function creates a significant nonlinearity error up to 0,2-0,6°C. We have developed methods of linearization based on both the formation of compensatory measuring current and change of the conversion factor of the output scaling amplifier at certain ranges of temperature measurement, which ensure their use in precision temperature measuring devices. The measurement error does not exceed 0.01°C in the range of 30-100°C.

Криогенные термометры сопротивления на основе пленок Ge–InP. Технология и конструирование в электронной аппаратуре

Despite the large number of scientific articles devoted to the development of cryogenic resistance thermometers, not many of these thermometers are mass-produced. As is know, semiconductor resistive temperature sensors have low magnetoresistance and high resistance to radiation. The purpose of this work was to manufacture thin (170—190 nm) Ge films on semi-insulating InP substrates, which can be used to create cryogenic resistance thermometers with high temperature sensitivity and relatively low sensitivity to magnetic field that can operate in the 1.5—400 К temperature range. Films of Ge on InP (100) can be used to produce cryogenic resistance thermometers. They have good thermal sensitivity and relatively low magnetoresistance. The films were produced by thermal evaporation of Ge in vacuum (2•10-4 Pa) on semi-insulating InP (100) substrates. The temperature of the InP substrate during film deposition was 310°C, the deposition rate was also constant during sputtering, but varied in the range of 0.03 to 0.06 nm/s for different films. Ge films were p-type conductivity with a resistivity of 0.2—0.3 Ω•cm, hole concentration (3—5)•1018 cm–3 and Hall mobility 6.5—7.5 сm2/(V•s) at room temperature. The quality of the Ge–InP heterostructure was determined by high-resolution X-ray diffraction on a Philips MRD diffractometer. The nanomorphology of the surface of Ge films was studied using the NanoScope IIIa atomic force microscope. The crystal structure of the films is amorphous or polycrystalline with a low level of structural perfection. The effective value of the surface roughness is from 2.25 to 2.60 nm. The obtained resistance values at different temperature in the range of 2—25 K were described by exponential dependence. Corrections in temperature measurement are 5% in a magnetic field of 11 T at a temperature of 4.2 K and 14% in a magnetic field of 14 T at a temperature of 2.2 K. The research results indicate that the obtained films can be used to measure cryogenic temperatures in magnetic fields of up to 14 T.

Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor

Semiconductor temperature sensors have been widely used in medical, industrial, aviation and civil fields due to their advantages such as high sensitivity, small size, low power consumption and strong anti-interference ability. However, most Si-based temperature sensors are not suitable for the application in high-temperature environments. The new AlGaN/GaN heterojunction material not only has a wide band gap, but also has a high two-dimensional electron gas concentration and carrier mobility. Therefore, the device made with it not only has good electrical properties, but also can be applied in ultra-high environments. In this paper, a temperature sensor based on gateless AlGaN/GaN high electron mobility transistor structure was fabricated and its temperature-dependent electrical properties were characterized. The temperature dependence of current-voltage characteristics of the device were tested from 50 to 400 °C. The sensitivity of the device was studied as a function of the channel aspect ratio of the device. The stability of electrical properties was characterized after heating in air and nitrogen at 300—500 °C for 1 hour. The theoretical and experimental results show that as the aspect ratio of the device increases, the sensitivity of the device increases. At a fixed current of 0.01 A, the average sensitivity of the device voltage with temperature changes is 44.5 mV/°C. Meanwhile, the good high temperature retention stability is shown during stability experiments.

Influence of Micro and Nanosilica on the Frost–Heave Process

Frost-heave of soils is an important problem in engineering practice. Thus, it became necessary to find an adequate method that would reduce the negative effect of this phenomenon on building structures. The paper presents the preliminary tests results of microsilica (MS) and nanosilica (NS) influence on the water freezing process in frost-susceptible soils. The selection of stabilising additives also allowed for the analysis of changes that result from their transition from micro to nanoscale. For the purposes of the experiment a test stand was constructed, that enables to analyse six samples at the same time, at inflow of water from the bottom and freezing direction from the top. The use of linear potentiometer displacement sensors allowed to measure the increase in the height of samples automatically. Additionally, the measurement stand was equipped with digital semiconductor temperature sensors, so temperature could be measured at various heights of the samples. Moreover, an array of electrodes was applied to measure the electrical conductivity of soil at various levels of samples, which enabled the analysis of changes that occur in freezing soil. The tests were conducted according to the BS 812-124:1989 standard, in three variants: soil, soil + 5% MS, soil + 5% NS. The obtained results demonstrated that the addition of microsilica reduces the occurrence of ice lenses, which in turn significantly decreases the growth in sample height. However, the addition of nanosilica completely stops the frost-heave process. Ice lens is not created, only a frost line is noticeable. Analysing the distribution of temperatures at different heights, it was noted that stabilised samples are characterised by higher temperature in comparison to the soil without additives. This means that the analysed stabilisers reduce the degree of freezing of the soil mixture. The highest temperatures were noted in samples stabilised with nanosilica. Conductivity tests also demonstrated that the smallest changes occurred in samples stabilised with nanosilica. This results from the fact that ice lenses did not occur in such samples. In order to analyse the obtained results and their interpretation thoroughly, it is necessary to perform a detailed analysis of the microstructure both of soil and of soil with stabilising additives.

An Accurate Measurement System Comprising of Wireless Thermometers for Neonate Body Temperature Monitoring

This paper addresses the design and implemen¬tation of a real-time monitoring system consisting of wireless thermometers (wireless temperature sensor node) for continuous recording of neonate body temperature in intensive care unit (ICU). Each wireless thermometer incorporates an accurate semiconductor temperature sensor, a transceiver operating on ISM frequency band (i.e., 915 MHz) as well as a microcontroller which is used to control the thermometers functionalities includ¬ing wireless medium access (e.g., free space or body channel), transmission and reception. A voltage regulator and a low-pass filter were also used for removing spurious signals and environmental noise from the thermometer feed line. In order to distinguish the reading of each thermometer from measurements performed by other thermometers, the I-wire protocol was used. This protocol can securely tag the temperature value by incorpo¬rating a unique ID (provided by the manufacturer) into the packet sent wirelessly. An array of two thermometers was implemented and successfully tested in different scenarios, namely free-space, water (immersed thermometers) and on a volunteer’s wrist. Moreover, an in-house developed computer software was used in order to visualize the readings in addition to alerting rapid increase and high body temperature. The software also compares the measurement results with actual values. The agreement between the experimental data and real temperature values is reasonably acceptable and that of the on-body testing is significant. Normal 0 false false false EN-US X-NONE FA

Real-time aroma monitoring of mint (Mentha spicata L.) leaves during the drying process using electronic nose system

Volatile compounds are important factors that affect the flavor quality of dried medicinal and aromatic plant products such as mint (Mentha spicata L.) leaves. This work aimed at capability evaluation of electronic nose as a complementary system for monitoring the dynamic changes of Volatile Organic Compounds (VOCs) of mint leaves during hot air drying process. The monitoring system includes a gas sensor array based on Metal Oxide Semiconductor (MOS) sensors, temperature and humidity sensors, a microcontroller device and laptop computer coupled with computational techniques. During the drying process aroma parameters, humidity, and temperature of the outlet air as well as sample weight were acquired at a given dryer setting. Results of Principal Component Analysis (PCA) showed that the fingerprints of VOCs for mint leaves are significantly altered during drying. Partial Least Squares (PLS), Multiple Linear Regression (MLR), and Principal Component Regression (PCR) were utilized to correlate the aroma parameters to mint leaf moisture content and to determine the termination time for the drying process. Performance of the models were approximately the same and showed high correlation coefficients of cross validation (RP2=0.94 and RMSEP = 5.79). The overall results demonstrated the effectiveness and feasibility of monitoring mint leaf drying conditions using electronic nose system to improve the final quality of the dried material, to decrease time of drying, and energy costs as well.

APPLICATION OF TEMPERATURE SENSORS FOR IMPROVING THE DEVICE BASED ON THE PHENOMENON OF SURFACE PLASMON RESONANCE

The device based on surface plasmon resonance (SPR) is used to determine the refraction index of liquids. At the same time, it is known that the value of this index depends on the temperature of this liquid. Therefore, this work was aimed at investigation of possibilities to enhance accuracy of such two-channel SPR devices by using the temperature sensors directly in each measuring cell. It has beenexperimentally proved that application of miniature temperature sensors (like to thermistors) in cells of both channels simultaneously enables to doubly reduce the error of refraction index measurements. In the case of multi-channel devices, it seams reasonable to use an array of semiconductor thin-film temperature sensors in the unit cell.

A Silicon Semiconductor Temperature Sensor Applied for RFID Tag

A new type of silicon semiconductor temperature sensor applied for RFID tag chip is designed based on the linear temperature characteristic of base-emitter voltage of parasitic substrate PNP transistor. A novel switched capacitor integrator based on positive-negative synchronous integration is introduced to amplify the weak temperature signal precisely and provide a method to represent the temperature in analog domain. Temperature quantization is accomplished by a 12-bit ultra-low-power successive approximation analog-to-digital converter providing a resolution of 0.03125°C/LSB. The circuit was simulated by using device model of 0.18-μm CMOS process. The output integration swing is 2VPP and the average current dissipation is 38.91μA at 1.8V supply. The sensor achieves an accuracy of -0.1°C to +0.33°C in the temperature range of -39°C to 89°C.

Rapid determination of fatigue life based on temperature evolution

This paper presents an approach to rapidly predict high cycle fatigue life based on the temperature evolution of a specimen under cyclic loading. The initial slope of the temperature evolution was proved as an indicator for rapid estimation of fatigue life theoretically. Meanwhile, a real-time temperature measurement system based upon high-precision semiconductor temperature sensors was developed to detect the temperature evolution based upon high-precision semiconductor temperature sensors. In order to verify the presented approach, constant-amplitude fatigue tests were carried out on A7N01 aluminium alloy and the welded joints, respectively. The predicted fatigue life based on proposed approach was in good agreement with experimental results.

Enhancement of Temperature Sensitivity for Metal–Insulator–Semiconductor Temperature Sensors by Using Bi2Mg2/3Nb4/3O7 Film

Metal–insulator–semiconductor (MIS) type temperature sensors with Bi2Mg2/3Nb4/3O7 (BMNO) film are introduced to improve temperature detecting ability. The current gain of presented sensor is nearly 180 within 7–77 °C which is more than the double amount of current gain in previous work. Dielectric thickness dependency of sensor is also decreased comparing with previous sensor. Temperature detecting mechanisms were analyzed by current and temperature relationship. It was also shown that these sensors were reliable through the temperature cycling test.

Design of the Temperature Control System of the Giant Magnetostrictive Actuator

Semiconductor refrigeration plate, temperature sensor, microcontroller STC12C5410AD and other circuits are used to design a new kind of temperature control system of the giant magnetostrictive actuator. Semiconductor refrigeration plate is controlled by the PID control algorithm for temperature controlling automatically.

Towards Tactile Sensing System on Chip for Robotic Applications

This paper presents the research on tactile sensing system on chip. The tactile sensing chips comprise of 5 × 5 array of Piezoelectric Oxide Semiconductor Field Effect Transistor (POSFET) devices and temperature sensors. The POSFET devices are obtained by spin coating piezoelectric polymer, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), films directly on to the gate area of Metal Oxide Semiconductor (MOS) transistors. The tactile sensing chips are able to measure dynamic contact forces and temperatures. The readout and the data acquisition system to acquire the tactile signals are also presented. The chips have been extensively tested over wide range of dynamic contact forces and temperatures and the experimental results are presented. The paper also reports the research on tactile sensing chips with POSFET array and the integrated electronics.

The Approximation Aspects of Characteristics of Semiconductor Temperature Sensors

The aim of the work is to analyze the possibilities to reduce the temperature measurement errors which emerge when using semiconductor analogous and digital sensors and thermistor-based sensors. The dependence of the output signal of the semiconductor temperature sensors in respect of the temperature is non-linear. By using the additional calibration at the several reference temperature points the sensor output signal dependencies on the temperature can be linearized better. In this way it is possible to reduce the temperature measurement errors several times and/or expand the range of the measured temperatures without the use of the expensive and precise temperature sensors. It was shown that for the sensors type DS620 the errors after the additional linearization and correction in the range (20-90) 0C did not exceed ±0.035 0C. The experimental and calculation results are provided. Ill. 8, bibl. 11, tabl. 1 (in English; abstracts in English and Lithuanian). http://dx.doi.org/10.5755/j01.eee.112.6.443

Semiconductor Based Line Type Heat Detector Following European EN54-22 Standard

Line type heat detectors (LTHD) are important for temperature based fire detection in applications with a large number of detection points. Preferably they are used in aggressive environments showing extreme temperatures, high humidity, dust exposure, aggressive gases, or others. Typical applications are in traffic tunnels, cable channels, or conveyor belts. Europe is actually preparing the new EN54-22 standard for resettable line type heat detectors (LTHD). This new standard includes a classification of the various types of detectors, reaction classes, and test procedures. It will allow more adequate testing compared to the actual procedure based on EN54-5 for point detectors. It will cover all types of resettable LTHD as semiconductor cables, fiber optic cables, pneumatic systems, and analog cables. The paper presents an overview on the actual draft of the standard. During the last years, Metaphysics has developed a new semiconductor sensor based LTHD. In contrary to other types of LTHD it is using discrete semiconductor temperature sensors such allowing an exact localization of the fire and highly flexible programming of the alarm functionality. Due to a special, patented high-speed bus system it has been shown in several public tests that this system is significantly faster than other LTHD systems. After first experience in the field, more features like loop setups with increased availability and network solutions have been added recently. The paper shows the physical principle of this approach and its system design completed by test reports and application examples.

Embedded web server for monitoring environmental parameters

In this communication a design of embedded web server based on the Ethernet technology for remote monitoring of weather parameters is presented. This web server monitors parameters viz. temperature and humidity and transmits this information in the form of HTML web-page. The input sensors LM35 semiconductor temperature sensor and SY-HS-220 humidity module have been employed, providing accuracy about 1° centigrade and 2% relative humidity. The web server provides simultaneous access to multiple nodes on the network.

Control of the Temperature in the Fluid Flow by Semiconductor Sensors

Application possibilities of the semiconductor temperature sensors for measurement of the temperature in the fluid flow are analyzed. Possible causes for scattering of the sensor parameters during manufacture were investigated. It was shown, that by additional calibration of the analog temperature sensors it is possible to increase the accuracy of the measurements. The simulation and experiment results are introduced. Ill. 5, bibl. 9 (in English; summaries in English, Russian and Lithuanian).

An Intelligent Noninvasive Sensor for Driver Pulse Wave Measurement

Noninvasive sensors to detect human physiological parameters are becoming more and more important. This is especially useful to monitor driver state as driver-vehicle system is a safety-critical system. Unfortunately, current technologies in these noninvasive sensors development are not satisfactory. In this research, we developed an intelligent integrated device called "smart wheel" to monitor drivers' physiology. Specifically, a group of polyvinylidene fluoride (PVDF) sensor, semiconductor temperature sensor, and piezoresistive sensor were integrated into a driving steering wheel. The developed device has the capability of measuring a driver's pulse wave, breathing wave, skin temperature, and gripping force in a noninvasive manner and in real time. A pilot experiment was carried out to verify the pulse wave measurement of this intelligent sensor and the result was found satisfactory