Design and Implementation of Temperature Sensor Based on Dynamic Current Gain Compensation Technology

Abstract

Complementary metal oxide semiconductor (CMOS) temperature sensors are widely used in on-chip systems for their low cost, high integration and low power consumption. A temperature sensor based on parasitic transistor front-end and dynamic current compensation technology is proposed in this paper, which is used to detect temperature in CMOS bipolar junction transistor. In this paper, the parasitic bipolar junction transistor (BJT) device in CMOS process and its temperature sensing principle are introduced, and a temperature sensor based on BJT temperature sensing front-end and dynamic current compensation technology is proposed. In this scheme, the high-resolution current comparator dynamic current compensation technology is used instead of the large capacitance which is necessary in the traditional current domain temperature sensor, which not only ensures the accuracy of the temperature sensor, but also ensures the accuracy of the temperature sensor, it also saves area and power consumption. The sensor’s control circuit uses a novel bucket search algorithm that allows current measured temperature values to be obtained by comparing as few times as possible. In addition, threshold setting technology is adopted to further improve the temperature sensing accuracy with lower power consumption and area cost. In the end, the test results and analysis are introduced. The CMOS temperature sensor proposed in this paper has been used in the standard 55 nm CMOS process. The test results show that the temperature range from −15 °C to 90 °C, the temperature measurement error is ± 0.5 °C and the area is only 0.021 mm2 after single point calibration.