Semiconductor Substrate Research Articles

Snowflake Cu2S@ZIF-67: A novel heterostructure substrate for enhanced adsorption and sensitive detection in BPA

Developing semiconductor substrates with superior stability and sensitivity is challenging in surface-enhanced Raman scattering (SERS) research. Here, a snowflake Cu2S@ZIF-67 heterostructure was fabricated using a straightforward method, exhibiting a notable enhancement factor of 9.0 × 109 and a limit of detection (LOD) of 10−14 M for methylene blue (MB). In addition, the Cu2S@ZIF-67 heterostructure substrate demonstrates outstanding homogeneity (relative standard deviation (RSD) = 9.2%) and stability (120 days). Employing Cu2S generates highly sensitive hotspots via an electromagnetic (EM) mechanism, and the growth of ZIF-67 on its surface augments the adsorption capacity and charge transfer capability (chemical mechanism, CM), thereby enhancing the SERS detection sensitivity. Furthermore, the Cu2S@ZIF-67 heterostructure, which was used as a SERS substrate, facilitated the detection of bisphenol A (BPA) with an LOD of 10−11 M. The Cu2S@ZIF-67 heterostructure substrate has excellent selectivity and anti-interference, which is very suitable for BPA detection in complex environment applications. The accuracy of the Cu2S@ZIF-67 heterostructure as a SERS substrate for detecting BPA in real water samples (water bottles, tap water, and pure milk) was confirmed by comparison with high-performance liquid chromatography (HPLC). These results demonstrate that through the rational design of heterostructures can achieve the quantitative and accurate detection of hazardous substances in food and the environment can be achieved.

Enhancement of Upconversion Luminescence through Three-Dimensional Design of Plasma Ti3O5-Coupled Structural Domain-Limiting Effects.

Upconversion luminescence plays a crucial role in various technological applications, and among the various valence states of lanthanide elements, Ln3+ has the highest stability. The 4f orbitals of these elements are in a fully empty, semifull, or full state. This special 4f electron configuration allows them to exhibit rich discrete energy levels. However, the 4f-4f transition of Ln3+ rare earth ions itself is prohibited, resulting in a lower luminescence efficiency. This limitation greatly hinders the practical application of upconversion luminescence. In this study, we report nanostructured luminescence-enhanced substrate platforms with both semiconductive local surface plasmons and spatially confined domain effects on a single defect semiconductor substrate. By coupling NaYF4:Yb-Er nanoparticle emitters to the surface of Ti3O5 NC-arrays plasmonic nanostructures, an ultrabright luminescence with a 32-fold increase in green emission and a 40-fold increase in red emission was achieved. Furthermore, the fluorescence resonance energy transfer characteristics observed in the R6G/NaYF4/Ti3O5 NC-array composite film enable accurate detection of fluorescent molecules. The results provide an innovative and intelligent approach to enhance the upconversion luminescence intensity of rare-doped nanoparticles and develop highly sensitive molecular detection systems based on the above luminescence enhancement.

Semiconductor Membrane Exfoliation: Technology and Application

AbstractFlexible semiconductor film‐based optoelectronic devices have garnered significant attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart healthcare due to their wide range of applications. It is challenging to directly grow the foundational materials of optoelectronic devices, specifically semiconductor thin film structures, on flexible substrates. Instead, they are typically fabricated on conventional rigid thick semiconductor substrates. Consequently, the exfoliation and transfer of epitaxial semiconductor thin film structures onto substrates constitute pivotal steps in the production of flexible optoelectronic devices. The integration of hard inorganic semiconductor materials with flexible substrates offers a solution to the limitations of rigidity and brittleness associated with conventional optoelectronic devices and can be used to address challenges from design to manufacturing. This review provides a comprehensive overview of the working principles and recent advances of various techniques aimed at achieving the membrane exfoliation and transfer of semiconductor structures on conventional rigid substrates. It also reviews the possible applications of the transferred membrane in a variety of optoelectronic devices. Finally, it offers insights into the potential of high‐end semiconductor manufacturing and flexible semiconductor devices to play a critical role in advancing next‐generation optoelectronics technologies.

Coupling hole-transporting polyaniline layer with a cobalt phthalocyanine cocatalyst to boost photoelectrochemical water oxidation of bismuth vanadate photoanodes

Though bismuth vanadate (BiVO4) exhibits a promising potential as a semiconductor photoanode toward photoelectrochemical (PEC) water oxidation, its PEC performance is still limited by the poor charge carrier transport and sluggish oxygen evolution kinetics. Herein, the polyaniline (PANI) and cobalt coordinated-phthalocyanines (CoTcPc) were introduced onto the BiVO4 semiconductor substrate, constructing the integrated CoTcPc/nPANI/BiVO4 (n = 30, 60 and 90, n represents the deposition time for PANI with the unit of s) composite photoanodes. It is demonstrated that the PEC water oxidation activity of BiVO4 is significantly boosted by the incorporation of PANI and CoTcPc, stemming from the improved electron/hole transfer, enhanced charge separation efficiency, and accelerated carrier mobility and water oxidation kinetics. CoTcPc/60PANI/BiVO4 composite photoanode with the optimized compositions exhibits an enhanced photocurrent density of 4.03 mA/cm2 at 1.23 V vs. RHE under illumination, ranking among the best records reported recently. Furthermore, the roles of electrodeposition time to generate PANI are also distinguished through experimental studies. These results reveal the crucial role of engineering the hole transfer layer to optimize the semiconductor photoanodes toward efficient PEC water oxidation.

High-quality single InGaAs/GaAs quantum dot growth on a silicon substrate for quantum photonic applications

Developing non-classical light sources for use in quantum information technology is a primary goal of quantum nanophotonics. Significant progress has been made in this area using quantum dots grown on III/V semiconductor substrates. However, it is crucial to develop quantum light sources based on silicon wafers to facilitate large-scale integration of electronic circuits and quantum photonic structures. We present a method for the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, which enables the fabrication of scalable and cost-effective quantum photonics devices that are compatible with silicon technology. To achieve high-quality GaAs heterostructures, we apply an intermediate GaP buffer and defect-reducing layers on a silicon substrate. The epitaxially grown quantum dots exhibit optical and quantum-optical properties similar to reference ones based on conventional GaAs substrates. The distributed Bragg reflector used as a backside mirror enables us to achieve bright emission with up to (18 ± 1)% photon extraction efficiency. Additionally, the quantum dots exhibit strong multi-photon suppression with g(2)(τ) = (3.7 ± 0.2) × 10−2 and high photon indistinguishability V = (66 ± 19)% under non-resonant excitation. These results indicate the high potential of our heteroepitaxy approach in the field of silicon-compatible quantum nanophotonics. Our approach can pave the way for future chips that combine electronic and quantum photonic functionality.

Molybdenum-14Rhenium alloy—The most promising candidate for high-temperature semiconductor substrate materials

The development of emerging high-temperature-resistant semiconductor materials is of great significance for the stability of signals and the reliability of sensors during extreme probing processes such as deep earth and space. However, current reports only focused on the properties of the semiconductor materials, neglecting the high-temperature-resistant properties of subsidiary components, such as substrate. In this study, for the first time, the feasibility of the Molybdenum-14Rhenium (Mo-14Re) alloy as a high-temperature semiconductor substrate material was verified at five temperature points (25 ℃ (room temperature, Rt.), 100 ℃, 200 ℃, 300 ℃, and 400 ℃, respectively). The results showed that the hardness (2.8 GPa to 2.4 GPa) of the Mo-14Re alloy changed slightly during the temperature up to 400 ℃; the Mo-14Re alloy generated protective Mo6+ and Re3+ oxides at different temperatures, which enhanced its oxidation resistance; the thermal expansion coefficient of the Mo-14Re alloy was 5.04 × 10−6/℃ at 400 ℃, which can be perfectly adapted to semiconductor components, such as silicon, silicon nitride, and gallium nitride. Simultaneously, the Mo-14Re alloy combined appropriate thermal conductivity, making it the most promising candidate for a new generation of high-temperature semiconductor substrate materials. This study can promote the application of semiconductor materials in extreme environments, such as high temperatures. Concurrently, this study can promote the development of deep earth exploration and aerospace fields and guide the selection of emerging high-temperature resistant substrate materials.

Universal Deoxidation of Semiconductor Substrates Assisted by Machine Learning and Real-Time Feedback Control.

Substrate oxidation is inevitable when exposed to ambient atmosphere during semiconductor manufacturing, which is detrimental to the fabrication of state-of-the-art devices. Optimizing the deoxidation process in molecular beam epitaxy (MBE) for random substrates poses a multidimensional challenge and is sometimes controversial. Due to variations in substrates and growth processes, the determination of the deoxidation condition heavily relies on the individual's expertise, yielding inconsistent results. This study employs a machine learning model that integrates interpolation and vision transformer (Interpolation-ViT) techniques. The model utilizes reflection high-energy electron diffraction videos as input to predict the status of the substrate, enabling automated deoxidation within a controlled architecture for various substrates. Furthermore, we highlight the potential of models trained on data from specific MBE equipment to achieve high-accuracy deployment on different pieces of equipment. In contrast to traditional methods, our approach holds exceptional value, as it standardizes deoxidation temperatures across diverse equipment and substrates. This significantly advances the standardization of the semiconductor process. The concepts and methods presented are expected to revolutionize semiconductor manufacturing processes in the optoelectronic and microelectronic industries.

Construction of composite SERS substrate based on black phosphorus/mesoporous ZIF-67 and its selective monitoring of food additives

Semiconductor-based surface-enhanced Raman scattering (SERS) dependent on chemical mechanism has shown favorable selective enhancement and recognition capabilities. However, the limited Raman enhancement capability of conventional semiconductor-based still remains a great challenge in the effective monitoring of trace molecules in a practical complex environment. In this context, a novel two-dimensional composite semiconductor substrate was developed by in-situ growing reticular ZIF-67 mesoporous film upon black phosphorus (BP) nanosheets. An attractive synergistic chemical enhancement was triggered attributed to the efficient continued charge transfer process in the BP/ZIF-67 system. Particularly, a selective SERS enhancement of food additive molecules with different orbital structures was found owing to the coupling degree of intrinsic molecular resonance and photo-induced charge transfer. A sensitive detection of lycopene in beverage samples with a high recovery rate was finally realized by the BP/ZIF-67 composite substrate, which exhibited great potential in practical molecular selective recognition.

One-dimensional topological phase and tunable soliton states in atomic nanolines on Si(001) surface

Formation of exotic topological states on technologically important semiconductor substrate is significant from the aspects of both fundamental research and practical implementation. Here, we demonstrate one-dimensional (1D) topological phase and tunable soliton states in atomic nanolines self-assembled on Si(001) surface. By first-principles calculations and tight-binding modeling, we reveal that Bi nanolines provide an ideal system to realize a multi-orbital Su–Schrieffer–Heeger (SSH) model, and the electronic properties can be modulated by substrate-orbital-filtering effect. The topological features are confirmed by nontrivial end states for a finite-length nanoline and (anti-)soliton states at the boundary of two topologically distinct phases. We demonstrate that solitons are highly mobile on the surface, and their formation could be controlled by surface B/N doping. As these nanolines can extend several micrometers long without kinks, and quantum transport simulations suggest clear signatures of topological states characterized by transmission resonance peaks, our work paves an avenue to achieve 1D topological phase compatible with semiconductor technology and to engineer the properties with high tunability and fidelity for quantum information processing.

Macroscale TiO2 Microspherical Arrays with Multiple Synergistic Effect for Highly Sensitive Surface‐Enhanced Raman Scattering

AbstractSemiconductor materials represent an ideal choice for designing surface‐enhanced Raman scattering (SERS)‐based sensors due to their superior thermal and chemical stability compared to conventional metal materials. However, current SERS‐active semiconductor substrates have limitations such as low detection sensitivity and often complicated preparation steps, which restrict their real‐life applications. In this work, for the first time the feasibility of large‐area fabricating SERS‐active semiconductor substrates based on screen‐printing of micron‐sized TiO2 ink synthesized through a simple flame thermal‐assisted method is demonstrated. The resultant TiO2 microspherical arrays (MSAs) exhibit extraordinary SERS sensitivity with an enhancement factor of 3.28 × 107, which represents one of the highest sensitivity and are the easiest strategy among the reported SERS‐active semiconductor substrates. Both experiments and simulations rationalize the observed enhancement factor and propose that multiple synergistic resonances, including Mie resonance, charge‐transfer resonance, and molecular resonance significantly boost the performance of semiconductor substrates. Dye‐modified TiO2 MSAs are further exploited as the sensing platform for the development of a ratiometric SERS sensor, enabling the highly sensitive, selective, low cost, and stable detection of Hg2+ ions. This study opens up new possibilities for preparing a large‐scale SERS‐active semiconductor array, ultimately advancing the fields of semiconductor‐based SERS sensing technology.

Nanopatterned Monolayers of Bioinspired, Sequence-Defined Polypeptoid Brushes for Semiconductor/Bio Interfaces.

The ability to control and manipulate semiconductor/bio interfaces is essential to enable biological nanofabrication pathways and bioelectronic devices. Traditional surface functionalization methods, such as self-assembled monolayers (SAMs), provide limited customization for these interfaces. Polymer brushes offer a wider range of chemistries, but choices that maintain compatibility with both lithographic patterning and biological systems are scarce. Here, we developed a class of bioinspired, sequence-defined polymers, i.e., polypeptoids, as tailored polymer brushes for surface modification of semiconductor substrates. Polypeptoids featuring a terminal hydroxyl (-OH) group are designed and synthesized for efficient melt grafting onto the native oxide layer of Si substrates, forming ultrathin (∼1 nm) monolayers. By programming monomer chemistry, our polypeptoid brush platform offers versatile surface modification, including adjustments to surface energy, passivation, preferential biomolecule attachment, and specific biomolecule binding. Importantly, the polypeptoid brush monolayers remain compatible with electron-beam lithographic patterning and retain their chemical characteristics even under harsh lithographic conditions. Electron-beam lithography is used over polypeptoid brushes to generate highly precise, binary nanoscale patterns with localized functionality for the selective immobilization (or passivation) of biomacromolecules, such as DNA origami or streptavidin, onto addressable arrays. This surface modification strategy with bioinspired, sequence-defined polypeptoid brushes enables monomer-level control over surface properties with a large parameter space of monomer chemistry and sequence and therefore is a highly versatile platform to precisely engineer semiconductor/bio interfaces for bioelectronics applications.

Influence of the Schottky Junction on the Propagation Characteristics of Shear Horizontal Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

In this paper, a theoretical model of the propagation of a shear horizontal wave in a piezoelectric semiconductor semi-infinite medium is established using the optimized spectral method. First, the basic equations of the piezoelectric semiconductor semi-infinite medium are derived with the consideration of biased electric fields. Then, considering the propagation of a shear horizontal wave in the piezoelectric semiconductor semi-infinite medium, two equivalent mathematical models are established. In the first mathematical model, the Schottky junction is theoretically treated as an electrically imperfect interface, and an interface characteristic length is utilized to describe the interface effect of the Schottky junction. To legitimately confirm the interface characteristic length, a second mathematical model is established, in which the Schottky junction is theoretically treated as an electrical gradient layer. Finally, the dispersion and attenuation curves of shear horizontal waves are numerically calculated using these two mathematical models to discuss the influence of the Schottky junction on the dispersion and attenuation characteristics of shear horizontal waves. Utilizing the equivalence of these two mathematical models and the above numerical results, the numerical value of the interface characteristic length is reliably legitimately confirmed; this value is independent of the thickness of the upper metal layer, the doping concentration of the lower n-type piezoelectric semiconductor substrate, and biasing electric fields. Only the biasing electric field parallel to the Schottky junction can provide an evident influence on the attenuation characteristics of shear horizontal waves and enhance the interface effect of the Schottky junction. Since the second mathematical model is also a validation of our previous mathematical model established through the state transfer equation method, some numerical results calculated using these two mathematical models are compared with those obtained using the previous method to verify the correctness and superiority of the research work presented in this paper. Since these two mathematical models can better calculate the dispersion and attenuation curves of high-frequency waves in micro- and nano-scale piezoelectric semiconductor materials, the establishment of mathematical models and the revelation of physical mechanisms are fundamental to the analysis and optimization of micro-scale resonators, energy harvesters, and amplifications.

Experimental and theoretical study on the facet‐dependent SERS activity of α‐Fe2O3 films

AbstractSemiconductors have attracted great attention for surface‐enhanced Raman scattering (SERS) applications due to their rich variety, adjustable band structure, good chemical stability, and biocompatibility. However, their intrinsic weak SERS activity limited the further development of semiconductor substrates. Here, the α‐Fe2O3 films with high {} and {} facet exposure ratios were fabricated through an electrodeposition method with the existence of NH4Cl and CH3COONa. The α‐Fe2O3{} and α‐Fe2O3{} films show excellent SERS properties with enhancement factor of 4.155×103 and 5.481×103, as well as the relatively low limit of detection down to 2 × 10−7 M for 4‐nitrobenzenethiol. Meanwhile, the lower relative standard deviation values (<10%) confirm the well uniformity of as‐prepared substrates. Ultraviolet photoelectron spectroscopy analysis reveals that the α‐Fe2O3{} possesses the lower work function, which could guarantee the efficient interfacial charge transfer between substrates and probe molecules. Moreover, first principles calculations further indicates that the charge transfer efficiency on {} facet can be effectively improved, and thus significantly enhance the SERS activity of α‐Fe2O3. The current study provides a strategy for the fabrication and application of semiconductor‐based SERS substrates.

Surface‐Enhanced Raman Scattering in BIC‐Driven Semiconductor Metasurfaces

AbstractSemiconductor‐based surface‐enhanced Raman spectroscopy (SERS) substrates, as a new frontier in the field of SERS, are hindered by their poor electromagnetic field confinement and weak light‐matter interaction. Metasurfaces, a class of 2D artificial materials based on the electromagnetic design of nanophotonic resonators, enable strong electromagnetic field enhancement and optical absorption engineering for a wide range of semiconductors. However, the engineering of semiconductor substrates into metasurfaces for improving SERS activity remains underexplored. Here, an improved SERS metasurface platform is developed that leverages the combination of titanium oxide (TiO2) and the emerging physical concept of optical bound states in the continuum (BICs) to boost the Raman emission. Moreover, fine‐tuning of BIC‐assisted resonant absorption offers a pathway for maximizing the photoinduced charge transfer effect (PICT) in SERS. High values of BIC‐assisted electric field enhancement (|E/E0|2 ≈103) are achieved, challenging the preconception of weak electromagnetic (EM) field enhancement on semiconductor SERS substrates. The BIC‐assisted TiO2 metasurface platform offers a new dimension in spectrally‐tunable SERS with earth‐abundant and bio‐compatible semiconductor materials, beyond the traditional plasmonic ones.

Nanoribbons of large-gap quantum spin Hall insulator: electronic structures and transport properties

Two-dimensional Bi grown on semiconductor substrate, a large-gap quantum spin Hall insulator characterized by a (p x , p y )-orbital hexagonal lattice, has been theoretically proposed and experimentally confirmed. Here, by combining tight-binding modeling with first-principles calculations, we investigate the electronic structures and quantum transport properties of Bi nanoribbons (NRs), focusing on the topological edge states for nanoelectronics. We reveal that band gap emerges due to the quantum confinement, and the gaps size depends crucially on the width and edge shape: for zigzag NRs, the gap decreases monotonically with the increase of width; while for armchair NRs, it can be categorized into three subgroups with band-gap hierarchies of Eg(3p−1)>Eg(3p)>Eg(3p+1) , so that the overall relation is an oscillating dependence dumped by 1/width decay. Quantum transport calculations demonstrate that the conductance is quantized to 2 e2/h , and an applied gate voltage can efficiently regulate the conductance plateau, originating from the interplay between gate voltage and topological gaps. Furthermore, the quantized conductance remains robust against strong disorder, suggesting the unique advantage of topological states for electronic transport. This work not only provides fundamental insights into the electronic properties of topological insulator nanostructures, but also sheds light on the potential applications of exotic states for quantum devices compatible with semiconductor technology.

High performance infrared photodetectors based on CdS film activated by lanthanide-doped upconverting nanoparticles

Cadmium sulfide (CdS) semiconductors are well known due to their low cost, easy production and excellent photoelectric properties. However, the photodetectors based on CdS respond only to green light at the wavelength of 540 nm and have negligible response to infrared light. Here, we report the high performance infrared photodetectors based on CdS film activated by lanthanide doped upconverting nanoparticles. The composite film integrates a CdS semiconductor substrate with a cutting-edge photon upconversion layer comprising upconversion nanoparticles meticulously arranged within photonic crystal arrays. The CdS semiconductor substrate can respond to the green light of 540 nm, while the photon converters can efficiently convert infrared light at 980 nm to green light at 540 nm. Compared with the single CdS film, the photocurrent amplitude of the composite film is enhanced by 1302 % under the same irradiation of 980 nm infrared light, while the photoresponsivity (R) and the external quantum efficiency (EQE) are enhanced by 14 times and 140 times, respectively. This confirms that the photon up-converters play a key role for enhancing the responsibility of the CdS film to 980 nm infrared light. This finding opens a way to convert conventional semiconductor photodetectors from visible to infrared region.

Ex-situ transferring of polydopamine films on semiconductor interface: Evidence of functional hybrid heterojunction

Polydopamine (PDA) films, when combined with model nanometric semiconductor substrates like titanium dioxide (TiO2) and zinc oxide (ZnO), enhance photocatalytic performance, generating a unique ex-situ functional heterojunction. We investigate PDA air/water films transferred onto large surfaces, revealing Janus-like films with strong chemical attachment. Spectroscopic methods confirm a functional hybrid heterojunction, while electrochemical studies show significant improvements with transfer resistance enhancement of ∼2250 %. This opens doors to various practical applications for hybrid heterojunctions.

Doping dependent intrinsic magnetization in silicon in Ni/Si heterostructures

This investigation delves into the complex interaction at metal-semiconductor interfaces, highlighting the magnetic proximity effect in Ni/Si interfaces through systematic X-ray magnetic circular dichroism (XMCD) studies at Ni and Si edges. We analyzed two Ni/Si heterostructures with differing semiconductor doping, uncovering a magnetic proximity effect manifesting as equilibrium magnetization in the semiconductor substrate induced by the adjacent Ni layer. Our results display distinct magnetization signs corresponding to the doping levels: low-doped samples show parallel alignment to the Ni layer, while high-doped samples align antiparallel, indicating a nuanced interplay of underlying magnetization mechanisms. These findings pinpoint the roles of electron tunneling and exchange splitting modification in the magnetization behavior. The study enriches the understanding of ferromagnetic-semiconductor interface behavior, setting a precedent for the design of advanced spintronic devices that leverage the nuanced magnetic properties of these hybrid systems.

Laser doping of n-type 4H-SiC with boron using solution precursor for mid-wave infrared optical properties

Laser doping of n-type 4H-silicon carbide (SiC) semiconductor substrates with boron (B) using a pulsed Nd:YAG laser (λ = 1064 nm) is reported. An aqueous boric acid solution was used as a boron precursor. A simple theoretical heat transfer model was employed to select the laser processing parameters, i.e., laser power and laser-substrate interaction time, and determine the appropriate temperature to dope 4H-SiC substrates. The selected processing parameters ensured that the temperature at the laser-substrate interaction zone was below the SiC peritectic temperature to prevent any crystalline phase transformations in SiC. Fourier-transform infrared spectrometry was conducted to determine the optical properties of both undoped and boron-doped 4H-SiC substrates within the mid-wave infrared (MWIR) wavelength range (3–5 μm). Boron atoms create an acceptor energy level at 0.29 eV above the valence band in the 4H-SiC bandgap, which corresponds to λ = 4.3 μm. Boron-doped 4H-SiC substrate exhibited reduced reflectance and increased absorptance for the MWIR range. An absorption peak at λ = 4.3 μm was detected for the doped substrate. This confirmed the creation of the acceptor energy level in the 4H-SiC bandgap and, thus, doping of 4H-SiC with boron. A notable decrease in the refractive index, i.e., from 2.87 to 2.52, after laser doping of n-type 4H-SiC with boron was achieved.

Proliferation in the photo-response characteristics of MDC thin films for optoelectronic applications through NSP technique

Nebulizer spray pyrolysis (NSP), a simple thin-film deposition method, was used to fabricate p-Si/n-manganese-doped cerium oxide (MDC)/Al photodiodes. The structure, morphology, optics, composition, electrical and rectifying properties of the prepared materials were analyzed. UV-Vis analysis demonstrates a prominent and acute absorption edge at 425 nm in the visible region. As more Mn impurities are incorporated into CeO2 crystallites, the band gap decreases as the doping level increases, leading to the formation of new recombination sites with low energy emissions. Electrons in outer orbits operate in energy bands, moving to higher energy levels. At higher Mn doping, some NBE emissions and green emission peaks disappear. The emission spectrum confirmed that strong and broad blue emission peak occurred for the diode containing the 15% Manganese Diode Cerium film. XRD peak shows the mono-phase polycrystalline cubic fluorite structure with the main orientation in the 200 directions. The broad lines (CeO) symmetry at 695,659,538 and 517 cm−1 observed in the Fourier Transform -Infrared spectrum are due to the phonons of the cerium oxide (Ce-O) network caused by asymmetric tip stretching and fastening vibration. Satellite peaks arise due to the transition from ligand (O 2p) to metal (Ce 4f) achieved during the primary and main photo-ionization process. This suggests that the valence states of Ce3+ and Ce4+ provide access to the CeO2 lattice sites. The I-V properties of p-Si/n-MDC/Al devices show behavior limited by the properties of the inorganic semiconductor substrate and the size of the hetero-interface energy barrier. The switching voltage of the hetero-junction was found to be approximately 2.4 V.