In this paper, we have done a comparative analysis on the performance of broadband second harmonic generation (SHG) using the concept of Total-Internal-Reflection-Quasi-Phase-Matching in near-infrared (NIR) region when the isotropic multi-tapered semiconductor slab is made of Zinc Telluride (ZnTe) and Cadmium Telluride (CdTe) semiconductors. MATLAB simulation has been carried out to obtain the conversion efficiency and 3db bandwidth when the slab is incident with a broadband fundamental laser radiation and the phenomenon of total internal reflection (TIR) takes place within the slab of 10 mm length. We have also considered the absorption losses, reflection losses and Goos-Hänchen (GH) shift in this process. The effects of variation in temperature, variation of the tapering angles of the slab which is made of semiconductor has been studied for second harmonic radiations in both CdTe and ZnTe crystals. Optimizing these parameters, we can design a wider broadband frequency converter with acceptable peak efficiency.