Achieving precise control over the growth of fully covered MoTe2 on a substrate is a crucial requirement for advancing device fabrication in the future. However, this goal continues to pose significant challenges. Thus, before the fabrication of a photodetector, we focused on optimizing a quasi-dry layer transfer process that eliminates the need for etchants and polymers. This optimization step is crucial for expanding the practicality of 2D materials in industrial applications. The transfer process, we developed can be applied to multiple 2D materials and substrates (growth/target), enabling the rapid production of elevated performance of 2D electrical devices and their van der Waals-based heterostructures. To demonstrate the effectiveness of this method, we successfully transferred MBE-grown MoTe2 on Si/SiO2 for photodetector application. The transferred MoTe2 is well characterized by various characterization tools including AFM, Raman, XPS, KPFM and UV-Vis spectroscopy. The fabricated metal semiconductor metal (MSM) photodetector on transferred MoTe2 shows the highest photoresponsivity of about 30mA/W at low power density (0.6 μW/mm2) at an illumination source of 650nm at a low applied voltage (3V). The calculated detectivity of the MSM photodetector is found to be 6.56 ×1016 Jones with noise equivalent power (NEP) of 9.13 ×10-15 WHz-1/2 for this wavelength. This current research work opens the pathways to multiple research areas including optoelectronics and electronics.