(Invited) Leading-Edge Diamond FET, MEMS, and Photodetector Devices

Abstract

Diamond is a candidate material for next-generation power electronics, micro-electro mechanical systems (MEMS), and solar-blind deep-ultraviolet (DUV) photodetector devices with excellent thermal stability and radiation hardness, which operate under extreme environment. In order to use an advantage of high-density hole channel of hydrogenated diamond (H-diamond) surface, we have developed the high-k stack gate dielectrics and AlN heterojuction gate for H-diamond FETs, such as HfO2/HfO2, LaAlO3/Al2O3 Ta2O5/Al2O3, and ZrO2/Al2O3, AlN/Al2O3 prepared by a combination of sputter-deposition (SD) and atomic layer deposition (ALD) techniques [1,2]. We also demonstrated the artificial diamond Fin-FETs with high-current level [3] and the nanolaminate insulator gate metal-oxide-gate FETs (MOSFETs) with k value as high as 100 [4], and the new transistor concept named by metal-insulator-metal-semiconductor field-effect transistor (MIMS-FET) to achieve normally-off operation by combining the advantages of MOSFET and metal-semiconductor FET [5]. In addition, we developed the routine ion-implantation process for preparing the diamond cantilever with a resonant frequency quality factor as high as one million [6,7]. We have also developed thermally stable Schottky barrier photodiode (SPD), metal-semiconductor-metal photodetector (MSMPD), and MSM-type SPD (IDF-SPD) with a large photoconductivity gain in DUV wavelength and a large discrimination ratio between DUV/visible light responsivity [8,9]. In this presentation, we will review the comprehensive our work on the diamond FET, MEMS, and photodetector devices. Acknowledgements: This work was in collaboration with J-W. Liu, M. Imura, M-Y. Liao, J. Alvarez in NIMS and A. Ouchiero and E. Obaldia in University of Taxes, Dallas, and partly supported by JSPS KAKENHI Grant Number 20H00313.